CN105008595B - 通过直拉法制造铟掺杂硅 - Google Patents

通过直拉法制造铟掺杂硅 Download PDF

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Publication number
CN105008595B
CN105008595B CN201380074084.7A CN201380074084A CN105008595B CN 105008595 B CN105008595 B CN 105008595B CN 201380074084 A CN201380074084 A CN 201380074084A CN 105008595 B CN105008595 B CN 105008595B
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China
Prior art keywords
indium
silicon
dopant
melt
mrow
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Chinese (zh)
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CN105008595A (zh
Inventor
J·S·阿佩尔
R·斯卡拉
L·博纳诺
S·哈灵格尔
A·贾纳塔斯欧
V·莫瑟
M·J·宾斯
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Gcl New Shanghai Photovoltaic Technology Co ltd
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SunEdison Inc
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H10F77/1223—Active materials comprising only Group IV materials characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
CN201380074084.7A 2012-12-31 2013-12-27 通过直拉法制造铟掺杂硅 Active CN105008595B (zh)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
ITTO2012A001175 2012-12-31
ITTO20121175 2012-12-31
EP2013054878 2013-03-11
EPPCT/EP2013/054875 2013-03-11
EPPCT/EP2013/054878 2013-03-11
EP2013054875 2013-03-11
US201361838660P 2013-06-24 2013-06-24
US61/838,660 2013-06-24
PCT/US2013/078046 WO2014106080A1 (en) 2012-12-31 2013-12-27 Fabrication of indium-doped silicon by the czochralski method

Publications (2)

Publication Number Publication Date
CN105008595A CN105008595A (zh) 2015-10-28
CN105008595B true CN105008595B (zh) 2018-04-13

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Application Number Title Priority Date Filing Date
CN201380074084.7A Active CN105008595B (zh) 2012-12-31 2013-12-27 通过直拉法制造铟掺杂硅

Country Status (6)

Country Link
US (2) US10060045B2 (enExample)
JP (1) JP2016503964A (enExample)
KR (1) KR20150103703A (enExample)
CN (1) CN105008595B (enExample)
TW (2) TWI596240B (enExample)
WO (2) WO2014106086A1 (enExample)

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CN108138354B (zh) * 2015-05-01 2021-05-28 各星有限公司 生产被挥发性掺杂剂掺杂的单晶锭的方法
US10184193B2 (en) 2015-05-18 2019-01-22 Globalwafers Co., Ltd. Epitaxy reactor and susceptor system for improved epitaxial wafer flatness
US10145023B2 (en) * 2015-07-17 2018-12-04 Corner Star Limited Methods for reducing deposits in ingot puller exhaust systems
US9640450B1 (en) * 2015-10-23 2017-05-02 Motech Industries Inc. Method for reducing light-induced-degradation in manufacturing solar cell
US10487418B2 (en) 2016-01-06 2019-11-26 Globalwafers Co., Ltd. Seed chuck assemblies and crystal pulling systems for reducing deposit build-up during crystal growth process
CN105821474B (zh) * 2016-04-13 2018-01-09 江西赛维Ldk太阳能高科技有限公司 一种晶体硅的制备方法及晶体硅
US20180087179A1 (en) * 2016-09-28 2018-03-29 Corner Star Limited Single crystal silicon ingots having doped axial regions with different resistivity and methods for producing such ingots
KR102626492B1 (ko) * 2016-11-14 2024-01-17 신에쓰 가가꾸 고교 가부시끼가이샤 고광전변환효율 태양전지의 제조 방법 및 고광전변환효율 태양전지
US10920337B2 (en) * 2016-12-28 2021-02-16 Globalwafers Co., Ltd. Methods for forming single crystal silicon ingots with improved resistivity control
JP6699797B2 (ja) * 2017-02-28 2020-05-27 株式会社Sumco シリコン単結晶インゴットの製造方法およびシリコン単結晶インゴット
JP6862916B2 (ja) * 2017-02-28 2021-04-21 株式会社Sumco シリコン単結晶インゴットの製造方法およびシリコン単結晶育成装置
DE102017220352B4 (de) 2017-11-15 2023-02-02 Siltronic Ag Verfahren zum Überprüfen einer Vorrichtung zum Ziehen eines Einkristalls und Vorrichtung zum Ziehen eines Einkristalls
DE102018210317A1 (de) * 2018-06-25 2020-01-02 Siltronic Ag Verfahren zur Herstellung eines Einkristalls aus Halbleitermaterial gemäß der FZ-Methode, Vorrichtung zur Durchführung des Verfahrens und Halbleiterscheibe aus Silizium
US11047066B2 (en) * 2018-06-27 2021-06-29 Globalwafers Co., Ltd. Growth of plural sample rods to determine impurity build-up during production of single crystal silicon ingots
EP3864197B1 (en) * 2018-10-12 2022-08-03 GlobalWafers Co., Ltd. Dopant concentration control in silicon melt to enhance the ingot quality
WO2020210129A1 (en) 2019-04-11 2020-10-15 Globalwafers Co., Ltd. Process for preparing ingot having reduced distortion at late body length
JP2022529451A (ja) 2019-04-18 2022-06-22 グローバルウェーハズ カンパニー リミテッド 連続チョクラルスキー法を用いる単結晶シリコンインゴットの成長方法
CN110255863B (zh) * 2019-07-22 2023-04-25 山东柔光新材料有限公司 一种柔性玻璃板根控制系统及其控制方法
US11111597B2 (en) 2019-09-13 2021-09-07 Globalwafers Co., Ltd. Methods for growing a nitrogen doped single crystal silicon ingot using continuous Czochralski method
US11111596B2 (en) 2019-09-13 2021-09-07 Globalwafers Co., Ltd. Single crystal silicon ingot having axial uniformity
JP7285197B2 (ja) * 2019-11-06 2023-06-01 グローバルウェーハズ・ジャパン株式会社 単結晶引上方法及び単結晶引上装置
CN113355739B (zh) * 2021-05-12 2023-01-24 晶澳太阳能有限公司 单晶硅及其制备方法
CN115491751A (zh) * 2021-06-17 2022-12-20 内蒙古中环协鑫光伏材料有限公司 一种根据保护气体流量控制掺镓单晶电阻率的拉制工艺
US11866845B2 (en) 2022-01-06 2024-01-09 Globalwafers Co., Ltd. Methods for growing single crystal silicon ingots that involve silicon feed tube inert gas control
US12037698B2 (en) 2022-01-06 2024-07-16 Globalwafers Co., Ltd Ingot puller apparatus having a flange that extends from the funnel or from the silicon feed tube
CN114808112B (zh) * 2022-03-31 2024-09-20 上海新昇半导体科技有限公司 一种单晶生长方法及晶圆

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Also Published As

Publication number Publication date
TW201432101A (zh) 2014-08-16
TW201438262A (zh) 2014-10-01
WO2014106080A1 (en) 2014-07-03
WO2014106086A1 (en) 2014-07-03
US20160215413A1 (en) 2016-07-28
CN105008595A (zh) 2015-10-28
KR20150103703A (ko) 2015-09-11
US20150333193A1 (en) 2015-11-19
JP2016503964A (ja) 2016-02-08
TWI596240B (zh) 2017-08-21
US10060045B2 (en) 2018-08-28

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