KR20150103703A - 인듐 도핑된 실리콘 웨이퍼 및 이를 사용한 태양 전지 - Google Patents

인듐 도핑된 실리콘 웨이퍼 및 이를 사용한 태양 전지 Download PDF

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Publication number
KR20150103703A
KR20150103703A KR1020157020520A KR20157020520A KR20150103703A KR 20150103703 A KR20150103703 A KR 20150103703A KR 1020157020520 A KR1020157020520 A KR 1020157020520A KR 20157020520 A KR20157020520 A KR 20157020520A KR 20150103703 A KR20150103703 A KR 20150103703A
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South Korea
Prior art keywords
solar cell
indium
less
single crystal
crystal silicon
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Ceased
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KR1020157020520A
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English (en)
Korean (ko)
Inventor
제시 삼소노브 아펠
마틴 제프리 빈스
로베르토 스칼라
루이기 보난노
스테판 하린게르
아르만도 기안나타시오
발렌티노 모세르
Original Assignee
엠이엠씨 일렉트로닉 머티리얼스 쏘시에떼 퍼 아찌오니
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Publication of KR20150103703A publication Critical patent/KR20150103703A/ko
Ceased legal-status Critical Current

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    • H01L31/0288—
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H01L31/02168—
    • H01L31/182—
    • H01L31/186—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H10F77/1223—Active materials comprising only Group IV materials characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
KR1020157020520A 2012-12-31 2013-12-27 인듐 도핑된 실리콘 웨이퍼 및 이를 사용한 태양 전지 Ceased KR20150103703A (ko)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
ITTO2012A001175 2012-12-31
ITTO20121175 2012-12-31
EP2013054878 2013-03-11
EPPCT/EP2013/054875 2013-03-11
EPPCT/EP2013/054878 2013-03-11
EP2013054875 2013-03-11
US201361838660P 2013-06-24 2013-06-24
US61/838,660 2013-06-24
PCT/US2013/078056 WO2014106086A1 (en) 2012-12-31 2013-12-27 Indium-doped silicon wafer and solar cell using the same

Publications (1)

Publication Number Publication Date
KR20150103703A true KR20150103703A (ko) 2015-09-11

Family

ID=51022087

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020157020520A Ceased KR20150103703A (ko) 2012-12-31 2013-12-27 인듐 도핑된 실리콘 웨이퍼 및 이를 사용한 태양 전지

Country Status (6)

Country Link
US (2) US10060045B2 (enExample)
JP (1) JP2016503964A (enExample)
KR (1) KR20150103703A (enExample)
CN (1) CN105008595B (enExample)
TW (2) TWI596240B (enExample)
WO (2) WO2014106086A1 (enExample)

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US10487418B2 (en) 2016-01-06 2019-11-26 Globalwafers Co., Ltd. Seed chuck assemblies and crystal pulling systems for reducing deposit build-up during crystal growth process
CN105821474B (zh) * 2016-04-13 2018-01-09 江西赛维Ldk太阳能高科技有限公司 一种晶体硅的制备方法及晶体硅
US20180087179A1 (en) * 2016-09-28 2018-03-29 Corner Star Limited Single crystal silicon ingots having doped axial regions with different resistivity and methods for producing such ingots
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US10920337B2 (en) * 2016-12-28 2021-02-16 Globalwafers Co., Ltd. Methods for forming single crystal silicon ingots with improved resistivity control
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JP6862916B2 (ja) * 2017-02-28 2021-04-21 株式会社Sumco シリコン単結晶インゴットの製造方法およびシリコン単結晶育成装置
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CN110255863B (zh) * 2019-07-22 2023-04-25 山东柔光新材料有限公司 一种柔性玻璃板根控制系统及其控制方法
US11111597B2 (en) 2019-09-13 2021-09-07 Globalwafers Co., Ltd. Methods for growing a nitrogen doped single crystal silicon ingot using continuous Czochralski method
US11111596B2 (en) 2019-09-13 2021-09-07 Globalwafers Co., Ltd. Single crystal silicon ingot having axial uniformity
JP7285197B2 (ja) * 2019-11-06 2023-06-01 グローバルウェーハズ・ジャパン株式会社 単結晶引上方法及び単結晶引上装置
CN113355739B (zh) * 2021-05-12 2023-01-24 晶澳太阳能有限公司 单晶硅及其制备方法
CN115491751A (zh) * 2021-06-17 2022-12-20 内蒙古中环协鑫光伏材料有限公司 一种根据保护气体流量控制掺镓单晶电阻率的拉制工艺
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Also Published As

Publication number Publication date
TW201432101A (zh) 2014-08-16
TW201438262A (zh) 2014-10-01
WO2014106080A1 (en) 2014-07-03
WO2014106086A1 (en) 2014-07-03
US20160215413A1 (en) 2016-07-28
CN105008595A (zh) 2015-10-28
US20150333193A1 (en) 2015-11-19
JP2016503964A (ja) 2016-02-08
TWI596240B (zh) 2017-08-21
US10060045B2 (en) 2018-08-28
CN105008595B (zh) 2018-04-13

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