FR2929960B1 - Procede de fabrication de silicium cristallin de qualite photovoltaique par ajout d'impuretes dopantes - Google Patents

Procede de fabrication de silicium cristallin de qualite photovoltaique par ajout d'impuretes dopantes

Info

Publication number
FR2929960B1
FR2929960B1 FR0801998A FR0801998A FR2929960B1 FR 2929960 B1 FR2929960 B1 FR 2929960B1 FR 0801998 A FR0801998 A FR 0801998A FR 0801998 A FR0801998 A FR 0801998A FR 2929960 B1 FR2929960 B1 FR 2929960B1
Authority
FR
France
Prior art keywords
crystalline silicon
doping impurities
producing crystalline
adding doping
photovoltaic quality
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0801998A
Other languages
English (en)
Other versions
FR2929960A1 (fr
Inventor
Jed Kraiem
Roland Einhaus
Hubert Lauvray
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Apollon Solar SAS
Cyberstar
Original Assignee
Apollon Solar SAS
Cyberstar
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR0801998A priority Critical patent/FR2929960B1/fr
Application filed by Apollon Solar SAS, Cyberstar filed Critical Apollon Solar SAS
Priority to US12/937,421 priority patent/US20110030793A1/en
Priority to JP2011503468A priority patent/JP2011517106A/ja
Priority to CN2009801127172A priority patent/CN101999013A/zh
Priority to RU2010145925/05A priority patent/RU2010145925A/ru
Priority to PCT/FR2009/000346 priority patent/WO2009130409A1/fr
Priority to EP09735663A priority patent/EP2262933A1/fr
Priority to BRPI0911627A priority patent/BRPI0911627A2/pt
Publication of FR2929960A1 publication Critical patent/FR2929960A1/fr
Priority to ZA2010/06853A priority patent/ZA201006853B/en
Application granted granted Critical
Publication of FR2929960B1 publication Critical patent/FR2929960B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Silicon Compounds (AREA)
  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR0801998A 2008-04-11 2008-04-11 Procede de fabrication de silicium cristallin de qualite photovoltaique par ajout d'impuretes dopantes Expired - Fee Related FR2929960B1 (fr)

Priority Applications (9)

Application Number Priority Date Filing Date Title
FR0801998A FR2929960B1 (fr) 2008-04-11 2008-04-11 Procede de fabrication de silicium cristallin de qualite photovoltaique par ajout d'impuretes dopantes
JP2011503468A JP2011517106A (ja) 2008-04-11 2009-03-27 ドーピング不純物を添加することにより光起電力グレード結晶シリコンを製造する方法及び光起電力電池
CN2009801127172A CN101999013A (zh) 2008-04-11 2009-03-27 通过添加掺杂杂质制造光伏级晶体硅的方法及光伏电池
RU2010145925/05A RU2010145925A (ru) 2008-04-11 2009-03-27 Способ получения кристаллического кремния фотоэлектрического качества добавлением легирующих примесей и фотоэлектрический элемент
US12/937,421 US20110030793A1 (en) 2008-04-11 2009-03-27 Method for producing photovoltaic-grade crystalline silicon by addition of doping impurities and photovoltaic cell
PCT/FR2009/000346 WO2009130409A1 (fr) 2008-04-11 2009-03-27 Procédé de fabrication de silicium cristallin de qualité photovoltaïque par ajout d'impuretés dopantes et cellule photo voltaïque
EP09735663A EP2262933A1 (fr) 2008-04-11 2009-03-27 Procédé de fabrication de silicium cristallin de qualité photovoltaïque par ajout d'impuretés dopantes et cellule photo voltaïque
BRPI0911627A BRPI0911627A2 (pt) 2008-04-11 2009-03-27 processo de produção de silício cristalino de qualidade fotovoltaica por acréscimo de impurezas dopantes e célula fotovoltaica
ZA2010/06853A ZA201006853B (en) 2008-04-11 2010-09-27 Method for producing photovoltaic-grade crystalline silicon by addition of doping impurities and photovoltaic cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0801998A FR2929960B1 (fr) 2008-04-11 2008-04-11 Procede de fabrication de silicium cristallin de qualite photovoltaique par ajout d'impuretes dopantes

Publications (2)

Publication Number Publication Date
FR2929960A1 FR2929960A1 (fr) 2009-10-16
FR2929960B1 true FR2929960B1 (fr) 2011-05-13

Family

ID=40076667

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0801998A Expired - Fee Related FR2929960B1 (fr) 2008-04-11 2008-04-11 Procede de fabrication de silicium cristallin de qualite photovoltaique par ajout d'impuretes dopantes

Country Status (9)

Country Link
US (1) US20110030793A1 (fr)
EP (1) EP2262933A1 (fr)
JP (1) JP2011517106A (fr)
CN (1) CN101999013A (fr)
BR (1) BRPI0911627A2 (fr)
FR (1) FR2929960B1 (fr)
RU (1) RU2010145925A (fr)
WO (1) WO2009130409A1 (fr)
ZA (1) ZA201006853B (fr)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120040016A (ko) * 2010-10-18 2012-04-26 엘지전자 주식회사 태양 전지용 기판 및 태양 전지
WO2012114375A1 (fr) * 2011-02-23 2012-08-30 信越半導体株式会社 Procédé pour la fabrication de monocristal de silicium de type n et monocristal de silicium de type n dopé par du phosphore
US10202705B2 (en) * 2011-04-14 2019-02-12 Gtat Ip Holding Llc Silicon ingot having uniform multiple dopants and method and apparatus for producing same
JP5470349B2 (ja) 2011-10-17 2014-04-16 ジルトロニック アクチエンゲゼルシャフト ｐ型シリコン単結晶およびその製造方法
CN102560641B (zh) * 2012-03-20 2015-03-25 浙江大学 一种掺杂电阻率均匀的n型铸造硅多晶及其制备方法
CN102560627B (zh) * 2012-03-20 2015-03-25 浙江大学 一种掺杂电阻率均匀的n型直拉硅单晶及其制备方法
FR2990563B1 (fr) * 2012-05-11 2014-05-09 Apollon Solar Cellule solaire a base de silicium dope de type n
WO2014106086A1 (fr) * 2012-12-31 2014-07-03 Memc Electronic Materials S.P.A. Tranche de silicium dopé à l'indium et pile solaire qui l'utilise
JP6349977B2 (ja) * 2013-10-21 2018-07-04 ソニー株式会社 情報処理装置および方法、並びにプログラム
US10724148B2 (en) 2014-01-21 2020-07-28 Infineon Technologies Ag Silicon ingot and method of manufacturing a silicon ingot
DE102014107590B3 (de) 2014-05-28 2015-10-01 Infineon Technologies Ag Halbleitervorrichtung, Siliziumwafer und Verfahren zum Herstellen eines Siliziumwafers
US10337117B2 (en) 2014-11-07 2019-07-02 Infineon Technologies Ag Method of manufacturing a silicon ingot and silicon ingot
CN105019022A (zh) * 2015-08-12 2015-11-04 常州天合光能有限公司 一种镓锗硼共掺准单晶硅及其制备方法
CN105755538A (zh) * 2016-05-05 2016-07-13 中国科学院合肥物质科学研究院 一种掺锡冶金多晶硅铸锭的制备方法
CN106222742B (zh) * 2016-09-12 2019-01-29 江西赛维Ldk太阳能高科技有限公司 一种晶体硅及其制备方法
US10920337B2 (en) 2016-12-28 2021-02-16 Globalwafers Co., Ltd. Methods for forming single crystal silicon ingots with improved resistivity control
CN113272479A (zh) 2018-10-12 2021-08-17 环球晶圆股份有限公司 控制硅熔融物中的掺杂剂浓度以增强铸锭质量
JP2022526817A (ja) 2019-04-11 2022-05-26 グローバルウェーハズ カンパニー リミテッド 本体長さ後半の歪みが低減されたインゴットの製造方法
WO2020214531A1 (fr) 2019-04-18 2020-10-22 Globalwafers Co., Ltd. Procédés de croissance d'un lingot de silicium monocristallin à l'aide d'un procédé de czochralski continu
US11111597B2 (en) 2019-09-13 2021-09-07 Globalwafers Co., Ltd. Methods for growing a nitrogen doped single crystal silicon ingot using continuous Czochralski method
US11111596B2 (en) 2019-09-13 2021-09-07 Globalwafers Co., Ltd. Single crystal silicon ingot having axial uniformity
WO2024053092A1 (fr) * 2022-09-09 2024-03-14 京セラ株式会社 Bloc de silicium de type n et substrat de silicium de type n

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JPH10236815A (ja) * 1997-02-28 1998-09-08 Kawasaki Steel Corp 太陽電池用シリコンの製造方法
JP4723071B2 (ja) * 2000-10-24 2011-07-13 信越半導体株式会社 シリコン結晶及びシリコン結晶ウエーハ並びにその製造方法
JP3855082B2 (ja) * 2002-10-07 2006-12-06 国立大学法人東京農工大学 多結晶シリコンの作製方法、多結晶シリコン、及び太陽電池
JP4380204B2 (ja) * 2003-04-10 2009-12-09 株式会社Ｓｕｍｃｏ シリコン単結晶及び単結晶育成方法
NO322246B1 (no) * 2004-12-27 2006-09-04 Elkem Solar As Fremgangsmate for fremstilling av rettet storknede silisiumingots
CN101220507A (zh) * 2007-10-08 2008-07-16 苏州阿特斯阳光电力科技有限公司 一种用于太阳能电池的硅晶片的制备方法

Also Published As

Publication number Publication date
CN101999013A (zh) 2011-03-30
JP2011517106A (ja) 2011-05-26
BRPI0911627A2 (pt) 2015-10-13
FR2929960A1 (fr) 2009-10-16
ZA201006853B (en) 2011-06-29
EP2262933A1 (fr) 2010-12-22
WO2009130409A1 (fr) 2009-10-29
US20110030793A1 (en) 2011-02-10
RU2010145925A (ru) 2012-05-20

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Effective date: 20131231