JP6557325B2 - 半導体構造物、その製造方法及び使用 - Google Patents
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 23
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/043—Mechanically stacked PV cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
- H01L31/1896—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates for thin-film semiconductors
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
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Description
1.接合工程により前記の一般的な薄層に対して損傷が引き起こされない
2.前記の接着剤が高温に対して安定でなければならない
3.前記の接着剤の機械的安定性が、モジュール製造の加工条件を満足しなければならない
4.高温での前記接着剤中の不純物のガス除去が回避されなければならない
5.導電性で、しかも、電気的に絶縁性の接着剤層が同様に作られる可能性がなければならない
Claims (16)
- 少なくとも1つの基材と、前記基材上にて少なくとも部分領域に塗布された少なくとも1つの半導体層でできた半導体構造物で、第1の半導体層が、熱的に及び/又は化学的に硬化した接着剤によって、少なくとも部分領域にて前記基材に一体的に接合されており、前記の硬化した接着剤が、少なくとも700℃の温度までの熱安定性を有しており、前記の硬化した接着剤が、前記基材の上に接着剤を塗布してから硬化させることにより生成され、前記の少なくとも1つの基材の材料が、シリコン、焼結シリコン、グラファイト、石英、ホウケイ酸ガラス、ガラス、セラミック材料及び、III−V化合物半導体、及びこれらの材料複合物から成るグループより選ばれたものであり、当該温度安定性が、当該温度範囲内において、本質的に金属不純物が放出されないことを意味することを特徴とする半導体構造物。
- 前記の接着剤が、シリコン、酸化物材料、窒化物材料又は炭化物材料、又はこれらの混合物から成るグループより選ばれたものであり、特に、x=1−2であるSiOx,x=1−2であるAlOx,x=0.5−1.5であるSiCx,x=0−2.5であるSiNx,ZnO:Al,TiNであることを特徴とする請求項1に記載の半導体構造物。
- 前記接着剤が、800〜1300℃の温度安定性を有し、好ましくは、当該温度範囲内において、1分間にcm2あたり1×1011原子未満の不純物原子の流出量が、脱ガス及び/又は放散によって前記接着剤から前記半導体層の中へ放出されることを特徴とする請求項1又は2に記載の半導体構造物。
- 前記接着剤が、少なくとも1種の充填剤、特に、フィロ珪酸塩鉱物、石英粒子、金属粒子、シリコン粉末、セラミック粉末及びこれらの混合物から成るグループより選ばれたものを含むことを特徴とする請求項1〜3のいずれか1項に記載の半導体構造物。
- 前記接着剤が、800〜1200nmの波長範囲にて入射放射線の少なくとも50%を反射することを特徴とする請求項1〜4のいずれか1項に記載の半導体構造物。
- a)電気的に絶縁性の基材の場合には、接着剤が、電気的に絶縁性又は電気的に伝導性であり;
b)電気的に半導電性の基材の場合には、接着剤が電気的に伝導性であり;及び/又は
c)電気的に伝導性の基材の場合には、接着剤が、電気的に伝導性又は電気的に絶縁性であること;
前記の電気的に伝導性の接着剤が、好ましくは、x=0.5−1.5であるSiCx,ZnO:Al,TiN及びシリコンから成るグループより選ばれ、しかも、前記の電気的に絶縁性の接着剤が、好ましくは、x=1−2であるSiOx,x=1−2であるAlOx,x=0.5−1.5であるSiCx,x=0−2.5であるSiNxから成るグループより選ばれたものであることを特徴とする請求項1〜5のいずれか1項に記載の半導体構造物。 - 第1の半導体層の上に、接着剤と、それに続いて、少なくとも1つの更なる半導体層が、少なくとも部分領域に塗布されていることを特徴とする請求項1〜6のいずれか1項に記載の半導体構造物。
- 前記半導体層が、異なる物性、特に、種々の波長範囲又は異なる伝導性における入射放射線の吸収についての異なるスペクトル特性を有していることを特徴とする請求項7に記載の半導体構造物。
- 前記の少なくとも1つの基材及び/又は、前記の少なくとも1つの半導体層が、少なくとも部分領域にて、熱処理の間に生じるあらゆるガスを取り除くのに適した開放気孔率、好ましくは5〜60%の多孔性を有していることを特徴とする請求項1〜8のいずれか1項に記載の半導体構造物。
- 前記のIII−V化合物半導体が、ZrSO 4 ,SiN,Al 2 O 3 ,SiC,GaAs,InP,GaP,GaN,AlGaAsPから成るグループより選ばれたものであることを特徴とする請求項1〜9のいずれか1項に記載の半導体構造物。
- 前記の半導体構造物が、太陽電池、特に、ウエハー等価太陽電池、多元系太陽電池又は薄膜太陽モジュールであることを特徴とする請求項1〜10のいずれか1項に記載の半導体構造物。
- a)基材の上にて、少なくとも部分領域に、接着剤と、それに続いて第1の半導体層が塗布され、
b)前記接着剤が熱的に及び/又は化学的に硬化されて、前記基材と半導体層の間に一体化接合が生成され、
前記接着剤が、少なくとも700℃の温度までの熱安定性を有することを特徴とする、請求項1〜11のいずれか1項に記載の、少なくとも1つの基材と少なくとも1つの半導体層からなる半導体構造物を製造するための方法。 - さらに、前記の第1の半導体層上にて、少なくとも部分領域に接着剤と、それに続いて少なくとも1つの更なる半導体層が塗布され、接着剤によって個々の半導体層の間に一体化接合が生じることを特徴とする請求項12に記載の方法。
- 前記の一体化接合の後に続いて更なる処理工程、特に、焼き戻し、湿式‐化学的、乾式‐化学的又は物理的洗浄、エピタキシャル濃化、エミッター拡散、表面及び/又はバルク不動態化、反射防止層の塗布、前‐又は後面接触、乾式又は湿式エッチング加工又はこれらの組み合わせを行うことを特徴とする請求項12又は13の1項に記載の方法。
- 前記接着剤の塗布及び硬化が連続工程で行われることを特徴とする請求項12〜14の1項に記載の方法。
- 太陽電池又は太陽電池モジュールにおける、請求項1〜11の1項に記載の半導体構造物の使用。
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DE102014217165.2A DE102014217165A1 (de) | 2014-08-28 | 2014-08-28 | Halbleiterstruktur, Verfahren zu deren Herstellung und deren Verwendung |
DE102014217165.2 | 2014-08-28 | ||
PCT/EP2015/069496 WO2016030403A1 (de) | 2014-08-28 | 2015-08-26 | Halbleiterstruktur, verfahren zu deren herstellung und deren verwendung |
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JP6557325B2 true JP6557325B2 (ja) | 2019-08-07 |
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- 2015-08-26 JP JP2017511649A patent/JP6557325B2/ja active Active
- 2015-08-26 EP EP15754218.4A patent/EP3186838A1/de not_active Withdrawn
- 2015-08-26 WO PCT/EP2015/069496 patent/WO2016030403A1/de active Application Filing
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US20170288082A1 (en) | 2017-10-05 |
EP3186838A1 (de) | 2017-07-05 |
DE102014217165A1 (de) | 2016-03-03 |
JP2017531314A (ja) | 2017-10-19 |
WO2016030403A1 (de) | 2016-03-03 |
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