RU2017105087A - Солнечный элемент и способ его изготовления - Google Patents

Солнечный элемент и способ его изготовления Download PDF

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RU2017105087A
RU2017105087A RU2017105087A RU2017105087A RU2017105087A RU 2017105087 A RU2017105087 A RU 2017105087A RU 2017105087 A RU2017105087 A RU 2017105087A RU 2017105087 A RU2017105087 A RU 2017105087A RU 2017105087 A RU2017105087 A RU 2017105087A
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Russia
Prior art keywords
silicon substrate
main surface
boron
solar cell
type conductivity
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RU2017105087A
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English (en)
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Такенори ВАТАБЕ
Хироюки ОЦУКА
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Син-Эцу Кемикал Ко., Лтд.
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Publication of RU2017105087A publication Critical patent/RU2017105087A/ru

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
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    • H—ELECTRICITY
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Claims (10)

1. Солнечный элемент, содержащий кремниевую подложку, легированную галлием и имеющую сформированный в ней р-n переход, при этом кремневая подложка
- снабжена пленкой термически оксидированного кремния по меньшей мере на первой из своих главных поверхностей, которая представляет собой главную поверхность, имеющую область с проводимостью р-типа, и
- дополнительно легирована бором.
2. Солнечный элемент по п. 1, в котором у кремниевой подложки по меньшей мере вся первая главная поверхность имеет проводимость р-типа.
3. Солнечный элемент по п. 1 или 2, в котором концентрация бора в кремниевой подложке составляет от 5×1014 до 1×1016 атомов/см3.
4. Способ изготовления солнечного элемента, включающий следующие операции:
- приготавливают кремниевую подложку, легированную галлием и бором,
- формируют в кремниевой подложке р-n переход и
- формируют пленку термически оксидированного кремния по меньшей мере на первой главной поверхности кремниевой подложки, причем указанная первая главная поверхность является главной поверхностью, имеющей область с проводимостью р-типа.
5. Способ по п. 4, в котором концентрация бора в приготовленной кремниевой подложке составляет от 5×1014 до 1×1016 атомов/см3.
RU2017105087A 2014-09-04 2015-06-12 Солнечный элемент и способ его изготовления RU2017105087A (ru)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014180220A JP5830147B1 (ja) 2014-09-04 2014-09-04 太陽電池及び太陽電池の製造方法
JP2014-180220 2014-09-04
PCT/JP2015/002959 WO2016035229A1 (ja) 2014-09-04 2015-06-12 太陽電池及び太陽電池の製造方法

Publications (1)

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RU2017105087A true RU2017105087A (ru) 2018-10-04

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US (1) US20170263791A1 (ru)
EP (1) EP3190628B1 (ru)
JP (1) JP5830147B1 (ru)
KR (1) KR102420807B1 (ru)
CN (1) CN106796964B (ru)
BR (1) BR112017003041A2 (ru)
ES (1) ES2780048T3 (ru)
MY (1) MY180755A (ru)
RU (1) RU2017105087A (ru)
SG (1) SG11201701418RA (ru)
TW (1) TWI673886B (ru)
WO (1) WO2016035229A1 (ru)

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JP6946706B2 (ja) * 2017-04-18 2021-10-06 市光工業株式会社 光変換装置の製造方法及び光変換装置
CN108133976A (zh) * 2018-01-29 2018-06-08 泰州隆基乐叶光伏科技有限公司 一种单晶掺镓背钝化太阳电池及其制备方法
CN108172637A (zh) * 2018-01-29 2018-06-15 泰州隆基乐叶光伏科技有限公司 一种多晶掺镓背钝化太阳电池及其制备方法
CN108133975B (zh) * 2018-01-29 2024-06-07 泰州隆基乐叶光伏科技有限公司 一种多晶掺镓太阳电池及其制备方法
CN111509082B (zh) * 2020-03-20 2024-05-24 中国科学院宁波材料技术与工程研究所 掺镓多晶硅薄膜制备方法及其在太阳电池的应用

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US6815605B1 (en) 1999-05-28 2004-11-09 Shin-Etsu Handotai Co., Ltd. Silicon single crystal and wafer doped with gallium and method for producing them
JP2002076399A (ja) * 2000-08-30 2002-03-15 Shin Etsu Handotai Co Ltd 太陽電池セルの製造方法およびこの方法で製造された太陽電池セル
JP2002083981A (ja) * 2000-09-07 2002-03-22 Shin Etsu Handotai Co Ltd 太陽電池セルおよびその製造方法
CN1284248C (zh) * 2000-10-06 2006-11-08 信越半导体株式会社 太阳能电池及其制造方法
JP2003282901A (ja) * 2002-03-27 2003-10-03 Shin Etsu Handotai Co Ltd 太陽電池モジュールの製造方法
JP4118187B2 (ja) * 2003-05-09 2008-07-16 信越半導体株式会社 太陽電池の製造方法
KR20100032900A (ko) * 2007-07-18 2010-03-26 아이엠이씨 에미터 구조체를 제조하는 방법 및 그로부터 생성되는 에미터 구조체들
WO2009052511A2 (en) * 2007-10-18 2009-04-23 Belano Holdings, Ltd. Mono-silicon solar cells
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KR101745683B1 (ko) * 2011-01-14 2017-06-09 엘지전자 주식회사 태양 전지 및 그 제조 방법
EP2715805B1 (en) * 2011-06-03 2016-04-06 MEMC Singapore Pte. Ltd. Processes for suppressing minority carrier lifetime degradation in silicon wafers
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KR101631450B1 (ko) * 2013-03-05 2016-06-17 엘지전자 주식회사 태양 전지

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EP3190628B1 (en) 2020-01-15
EP3190628A4 (en) 2018-08-22
KR102420807B1 (ko) 2022-07-13
ES2780048T3 (es) 2020-08-21
BR112017003041A2 (pt) 2017-11-21
TW201626593A (zh) 2016-07-16
CN106796964B (zh) 2018-11-20
EP3190628A1 (en) 2017-07-12
JP5830147B1 (ja) 2015-12-09
KR20170053614A (ko) 2017-05-16
JP2016054255A (ja) 2016-04-14
CN106796964A (zh) 2017-05-31
MY180755A (en) 2020-12-08
WO2016035229A1 (ja) 2016-03-10
US20170263791A1 (en) 2017-09-14
TWI673886B (zh) 2019-10-01
SG11201701418RA (en) 2017-03-30

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