RU2017105087A - SOLAR ELEMENT AND METHOD FOR ITS MANUFACTURE - Google Patents

SOLAR ELEMENT AND METHOD FOR ITS MANUFACTURE Download PDF

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Publication number
RU2017105087A
RU2017105087A RU2017105087A RU2017105087A RU2017105087A RU 2017105087 A RU2017105087 A RU 2017105087A RU 2017105087 A RU2017105087 A RU 2017105087A RU 2017105087 A RU2017105087 A RU 2017105087A RU 2017105087 A RU2017105087 A RU 2017105087A
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RU
Russia
Prior art keywords
silicon substrate
main surface
boron
solar cell
type conductivity
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RU2017105087A
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Russian (ru)
Inventor
Такенори ВАТАБЕ
Хироюки ОЦУКА
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Син-Эцу Кемикал Ко., Лтд.
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Publication of RU2017105087A publication Critical patent/RU2017105087A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
    • H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Claims (10)

1. Солнечный элемент, содержащий кремниевую подложку, легированную галлием и имеющую сформированный в ней р-n переход, при этом кремневая подложка1. A solar cell containing a gallium-doped silicon substrate and having a pn junction formed therein, the silicon substrate - снабжена пленкой термически оксидированного кремния по меньшей мере на первой из своих главных поверхностей, которая представляет собой главную поверхность, имеющую область с проводимостью р-типа, и- equipped with a film of thermally oxidized silicon at least on the first of its main surfaces, which is a main surface having a region with p-type conductivity, and - дополнительно легирована бором.- additionally doped with boron. 2. Солнечный элемент по п. 1, в котором у кремниевой подложки по меньшей мере вся первая главная поверхность имеет проводимость р-типа.2. The solar cell according to claim 1, in which at the silicon substrate at least the entire first main surface has p-type conductivity. 3. Солнечный элемент по п. 1 или 2, в котором концентрация бора в кремниевой подложке составляет от 5×1014 до 1×1016 атомов/см3.3. The solar cell according to claim 1 or 2, in which the concentration of boron in the silicon substrate is from 5 × 10 14 to 1 × 10 16 atoms / cm 3 . 4. Способ изготовления солнечного элемента, включающий следующие операции:4. A method of manufacturing a solar cell, comprising the following operations: - приготавливают кремниевую подложку, легированную галлием и бором,- prepare a silicon substrate doped with gallium and boron, - формируют в кремниевой подложке р-n переход и- form in the silicon substrate pn junction and - формируют пленку термически оксидированного кремния по меньшей мере на первой главной поверхности кремниевой подложки, причем указанная первая главная поверхность является главной поверхностью, имеющей область с проводимостью р-типа.- form a film of thermally oxidized silicon at least on the first main surface of the silicon substrate, and the specified first main surface is the main surface having a region with p-type conductivity. 5. Способ по п. 4, в котором концентрация бора в приготовленной кремниевой подложке составляет от 5×1014 до 1×1016 атомов/см3.5. The method according to p. 4, in which the concentration of boron in the prepared silicon substrate is from 5 × 10 14 to 1 × 10 16 atoms / cm 3 .
RU2017105087A 2014-09-04 2015-06-12 SOLAR ELEMENT AND METHOD FOR ITS MANUFACTURE RU2017105087A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014-180220 2014-09-04
JP2014180220A JP5830147B1 (en) 2014-09-04 2014-09-04 Solar cell and method for manufacturing solar cell
PCT/JP2015/002959 WO2016035229A1 (en) 2014-09-04 2015-06-12 Solar cell and solar cell manufacturing method

Publications (1)

Publication Number Publication Date
RU2017105087A true RU2017105087A (en) 2018-10-04

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US (1) US20170263791A1 (en)
EP (1) EP3190628B1 (en)
JP (1) JP5830147B1 (en)
KR (1) KR102420807B1 (en)
CN (1) CN106796964B (en)
BR (1) BR112017003041A2 (en)
ES (1) ES2780048T3 (en)
MY (1) MY180755A (en)
RU (1) RU2017105087A (en)
SG (1) SG11201701418RA (en)
TW (1) TWI673886B (en)
WO (1) WO2016035229A1 (en)

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JP6946706B2 (en) * 2017-04-18 2021-10-06 市光工業株式会社 Manufacturing method of optical converter and optical converter
CN108172637A (en) * 2018-01-29 2018-06-15 泰州隆基乐叶光伏科技有限公司 A kind of polycrystalline mixes gallium back of the body passivating solar battery and preparation method thereof
CN108133976A (en) * 2018-01-29 2018-06-08 泰州隆基乐叶光伏科技有限公司 A kind of monocrystalline mixes gallium back of the body passivating solar battery and preparation method thereof
CN108133975A (en) * 2018-01-29 2018-06-08 泰州隆基乐叶光伏科技有限公司 A kind of polycrystalline mixes gallium solar cell and preparation method thereof
CN111509082A (en) * 2020-03-20 2020-08-07 中国科学院宁波材料技术与工程研究所 Preparation method of gallium-doped polycrystalline silicon film and application of gallium-doped polycrystalline silicon film in solar cell

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US6815605B1 (en) 1999-05-28 2004-11-09 Shin-Etsu Handotai Co., Ltd. Silicon single crystal and wafer doped with gallium and method for producing them
JP2002076399A (en) * 2000-08-30 2002-03-15 Shin Etsu Handotai Co Ltd Manufacturing method of solar cell and solar cell manufactured by this method
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MY180755A (en) 2020-12-08
CN106796964B (en) 2018-11-20
BR112017003041A2 (en) 2017-11-21
JP2016054255A (en) 2016-04-14
KR102420807B1 (en) 2022-07-13
EP3190628B1 (en) 2020-01-15
SG11201701418RA (en) 2017-03-30
TW201626593A (en) 2016-07-16
ES2780048T3 (en) 2020-08-21
EP3190628A1 (en) 2017-07-12
JP5830147B1 (en) 2015-12-09
EP3190628A4 (en) 2018-08-22
US20170263791A1 (en) 2017-09-14
WO2016035229A1 (en) 2016-03-10
KR20170053614A (en) 2017-05-16
CN106796964A (en) 2017-05-31
TWI673886B (en) 2019-10-01

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