CN108133976A - A kind of monocrystalline mixes gallium back of the body passivating solar battery and preparation method thereof - Google Patents
A kind of monocrystalline mixes gallium back of the body passivating solar battery and preparation method thereof Download PDFInfo
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- CN108133976A CN108133976A CN201810085600.0A CN201810085600A CN108133976A CN 108133976 A CN108133976 A CN 108133976A CN 201810085600 A CN201810085600 A CN 201810085600A CN 108133976 A CN108133976 A CN 108133976A
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- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 title claims abstract description 68
- 229910052733 gallium Inorganic materials 0.000 title claims abstract description 68
- 238000002360 preparation method Methods 0.000 title claims abstract description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 60
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 60
- 239000010703 silicon Substances 0.000 claims abstract description 60
- 238000000034 method Methods 0.000 claims abstract description 23
- 238000002161 passivation Methods 0.000 claims abstract description 20
- 239000004020 conductor Substances 0.000 claims abstract description 14
- 239000000203 mixture Substances 0.000 claims abstract description 13
- 238000012545 processing Methods 0.000 claims abstract description 10
- 238000009413 insulation Methods 0.000 claims abstract description 8
- 238000001465 metallisation Methods 0.000 claims abstract description 6
- 230000003667 anti-reflective effect Effects 0.000 claims abstract description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 36
- 229910052782 aluminium Inorganic materials 0.000 claims description 34
- 239000004411 aluminium Substances 0.000 claims description 31
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 25
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 22
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 22
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 20
- 229910052796 boron Inorganic materials 0.000 claims description 20
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 15
- 229910052709 silver Inorganic materials 0.000 claims description 15
- 239000004332 silver Substances 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 239000002002 slurry Substances 0.000 claims description 9
- 229910000632 Alusil Inorganic materials 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 6
- 238000005245 sintering Methods 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 238000003475 lamination Methods 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 15
- 125000004429 atom Chemical group 0.000 description 10
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 239000006117 anti-reflective coating Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 4
- 238000005554 pickling Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 239000004615 ingredient Substances 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- 241000931526 Acer campestre Species 0.000 description 2
- 229910019213 POCl3 Inorganic materials 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000011267 electrode slurry Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 125000003698 tetramethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
- H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table characterised by the doping material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
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Abstract
The invention discloses a kind of monocrystalline to mix gallium back of the body passivating solar battery and preparation method.Monocrystalline is mixed gallium and is included：Gallium silicon base is mixed doped with the monocrystalline of gallium element, and emitter on it and back surface field, it is placed in the passivation of emitter surface and antireflective front surface antireflection film/passivating film and is placed in the backside passivation film of substrate back surface, the front electrode of the conductive material composition of front surface antireflection film/passivation film surface is placed in, is placed in the backplate of the conductive material composition of passivating back film surface.Preparation method, including：Surface-texturing is completed on the silicon chip for mix gallium, prepared by emitter, insulation processing, front surface passivated reflection reducing penetrates film and back surface passivation film preparation, and backside passivation film local opens film and metallization processes.
Description
Technical field
The present invention relates to technical field of solar batteries, more particularly to a kind of monocrystalline mixes gallium back of the body passivating solar battery and its system
Preparation Method.
Background technology
At present, gradually exhausting with fossil energy, for solar cell as new energy substitution scheme, use is more and more wider
It is general.Solar cell is the device that the luminous energy of the sun is converted to electric energy.Solar cell generates carrier using photogenic voltage principle,
Then carrier is drawn using electrode, so as to be conducive to efficiently use electric energy.
The p-type solar cell substrate used at present, generally doped with the silicon chip of boron element.But it uses doped with boron member
As the solar cell of substrate, certain attenuation can occur the monocrystalline silicon of element under solar irradiation for battery efficiency together.This attenuation
Referred to as light decay (LID).The efficiency of back of the body passivating solar battery decays 3 made of the boron-doping monocrystalline silicon piece in photovoltaic industry at present
Between~10%.Position boron atom and monocrystalline silicon are replaced in essential reason and doping substrate that the photo attenuation of this battery generates
The oxygen atom of mid gap state can form boron oxygen complex in the case where light injects.And boron oxygen complex is during deep energy level is compound
The heart can reduce the service life of minority carrier in this way, so as to reduce the diffusion length of minority carrier, lead to the efficiency of solar cell
It reduces.
Invention content
It, can be in view of the above problems, the present invention provides a kind of monocrystalline to mix gallium back of the body passivating solar battery and preparation method thereof
It solves the above problems, reduces due to photo attenuation caused by boron oxygen complex.
The present invention technical solution be：
A kind of monocrystalline mixes gallium back of the body passivating solar battery, is included successively by front to the back side：Front electrode, positive antireflective
Film/passivating film, emitter, monocrystalline mix gallium silicon base, backside passivation film and backplate；The backplate includes aluminium electrode
With back side silver electrode.
The doping concentration that the monocrystalline mixes gallium element in gallium silicon base is 1 × 1013~1 × 1017A atom/cube li
Rice.
The monocrystalline mixes gallium silicon base also doped with boron element, and the doping concentration of boron element is 1 × 1013~1 × 1017
A atom/cubic centimetre.
The front electrode be by conductive material by sintering partially or fully penetrate front surface antireflection film/passivating film or
Diaphragm area is opened by the part on front surface antireflection film/passivating film to be in direct contact with emitter formation.
The backside passivation film offers part and opens diaphragm area, and aluminium electrode opens diaphragm area by part and mixes gallium silicon with monocrystalline
The back side of substrate forms contact.
The aluminium electrode and monocrystalline includes the hole doping layer that one layer of doping component is aluminium between mixing gallium silicon base, described
The thickness of hole doping layer is 1~15um.
Also doped with boron in the hole doping layer, boron element doping concentration is 5 × 1016~1 × 1021A atom/vertical
Square centimetre.
Further include one layer of alusil alloy layer between the hole doping layer and aluminium electrode, alusil alloy layer thickness for 1~
5um。
Front surface antireflection film/the passivating film is silica, silicon nitride, silicon oxynitride, aluminium oxide and carborundum films
In one or more laminations form；The refractive index of front surface antireflection film/passivating film is 1.5~2.5,50~100nm of thickness.
A kind of monocrystalline mixes the preparation method of gallium back of the body passivating solar battery, includes the following steps：
1) it mixes monocrystalline gallium silicon base and carries out surface-texturing and cleaning；
2) gallium silicon base front is mixed in monocrystalline to carry out preparing emitter；
3) it mixes monocrystalline gallium silicon base and carries out edge insulation processing；
4) system that the gallium silicon base positive back side respectively carry out front surface antireflection film/passivating film and backside passivation film is mixed monocrystalline
It is standby；
5) local is overleaf carried out on passivating film and opens film；
6) monocrystalline is mixed gallium silicon base front, the back side carry out electrocondution slurry be graphically coated with；
7) it carries out metallization heat treatment process and prepares front electrode and backplate respectively.
Relative to the prior art, the present invention has following technique effect：
The present invention includes the single-crystal semiconductor substrate doped with gallium element and emitter and back surface on it
, it is placed in the passivation of emitter surface and antireflective deielectric-coating and is placed in the passivation dielectric film of substrate back surface, be placed in deielectric-coating
The front electrode and backplate of the conductive material composition on surface, are placed in the positive conductive material of solar cell by high temperature sintering
Partial penetration medium membrane material or by the part on deielectric-coating open diaphragm area and emitter formation be in direct contact, be placed in too
The backplate of positive cell backside opens diaphragm area by the part on deielectric-coating and semiconductor formation is in direct contact.Using monocrystalline
Base material of the gallium silicon as solar cell is mixed, monocrystalline is prepared for and mixes gallium back of the body passivating solar battery, doping base can be reduced by mixing gallium
Boron oxygen complex can be formed in the case where light injects instead of the oxygen atom of position boron atom and monocrystalline silicon mid gap state in bottom, this
Sample can increase the service life of minority carrier, so as to increase the diffusion length of minority carrier, lead to the efficiency of solar cell to increase,
And ensure the long-term reliability of battery.The battery structure can reduce or inhibit the light decay of single crystal silicon solar cell, energy substantially
The light decay of monocrystalline silicon back of the body passivating solar battery is controlled within 3%.
One layer of doping component that the aluminium electrode and monocrystalline being further formed mix between gallium silicon base is the silicon substrate of aluminium
Hole doping layer.The silicon substrate hole doping layer and silicon base of this layer of aluminium form the potential difference of p+/p, so as to improve entire battery
Open-circuit voltage, the recombination rate near the electrode is also reduced, so as to improve transfer efficiency.
Boron can be also further doped in the hole doping layer, boron element doping concentration is 5 × 1016~1 × 1021
A atom/cubic centimetre.The doping concentration of boron is generally greater than aluminium doping hole concentration, and therefore, the potential difference of p+/p increases, further
Improve open-circuit voltage.
It may also include one layer of alusil alloy layer between the hole doping layer and aluminium electrode, alusil alloy layer thickness is 1
~5um.The presence of this alusil alloy layer can cause the conductive electrode of aluminum and the semiconductor base of p-type to be formed and preferably connect
Touch performance.
Be further doped with boron element monocrystalline mix gallium silicon base as above-mentioned battery substrate also can realize reduction electricity
The effect of pond light decay.
The preparation method step that monocrystalline of the present invention mixes gallium solar cell includes：Surface Texture is carried out in the silicon base for mix gallium
Change, and prepare emitter in the front of battery, prepare passivation and antireflective coating in front, back side trepanning and in battery just
Face and reverse side prepare electrode and high-temperature sintering process, and integrated artistic is simple, are suitble to industrialized production.
Description of the drawings
Fig. 1 is the battery schematic diagram of an example in the embodiment of the solar cell of the present invention.
Fig. 2 is the positive electrode schematic diagram in the embodiment 1 of the solar cell of the present invention.
Fig. 3 is the electrode schematic diagram of the reverse side in the embodiment 1 of the solar cell of the present invention.
Wherein, 1 mixes gallium silicon base for monocrystalline, and 2 be emitter, and 3 be front surface antireflection film/passivating film, and 4 be passivating back
Film, 5 be aluminium electrode, and 6 be front electrode, and 7 be back side silver electrode, and 8 open diaphragm area for part, and 9 be the thin grid line in front, and 10 be front
Connection electrode.
Specific embodiment
The present invention will be described for citing specific embodiment below.It should be pointed out that following embodiment is served only for this
Invention is described further, and does not represent protection scope of the present invention, other people promptings according to the present invention are made nonessential
Modification and adjustment, still fall within protection scope of the present invention.
As shown in Figure 1, a kind of monocrystalline mixes gallium back of the body passivating solar battery, including：Doped single crystal silicon base 1 and on it
Emitter 2, the passivated reflection reducing for being placed in 2 surface of emitter penetrates film 3, is placed in the conductive material composition that passivated reflection reducing penetrates 3 surface of film
Front electrode 6, be placed in backside of substrate passivating film 4, the conductive electrode being placed in backside passivation film 4；Above-mentioned front side conductive material
Partially or fully penetrate passivated reflection reducing penetrate film 3 and emitter 2 formation be in direct contact；Overleaf 4 innings of passivating film of back side conductive material
Domain, which opens diaphragm area and monocrystalline and mixes the formation of gallium silicon base 1, to be contacted, and it is non-open diaphragm area and do not mix gallium silicon base 1 with monocrystalline then formed directly
Contact.Monocrystalline mixes gallium element adulterates in gallium silicon base 1 a concentration of 1 × 1013~1 × 1017A atom/cubic centimetre.
Preferably, monocrystalline, which mixes gallium silicon base 1, can also further contain a concentration of the 1 × 10 of boron, wherein boron element doping13~
1×1017A atom/cubic centimetre.
Wherein, monocrystalline mixes front surface antireflection film/passivating film of 1 front surface of gallium silicon base, is folded by one or more layers film
Add composition, wherein the ingredient of film include one of silicon nitride, silica, silicon oxynitride or two or all include.Back surface
Front surface antireflection film/passivating film is made of the superposition of one or more layers film；Wherein the ingredient of film include aluminium oxide, silicon nitride,
Silica, the one or more or whole of silicon oxynitride include.
As shown in Fig. 2, front electrode 6 includes the thin grid line 9 in front for guiding electric current and the front for collected current
Connection electrode 10, the thin grid line 9 in front are arranged vertically with positive connection electrode 10.
Local Kai Mo areas on the back side, front surface antireflection film/passivating film, front surface antireflection film/passivating film are removed, institute's shape
Into open film local figure, can be straight line, line segment, latticed form or one or more of mixed form therein.The back of the body
Face electrode includes aluminium electrode 5 and several back side silver electrodes 7.
As shown in figure 3, back side silver electrode is distributed in silicon substrate bottom back side in localization, each region of back side silver electrode 7 is each
It is not attached to；Aluminium electrode 5 is distributed in the cell backside except silver electrode and silicon base dorsal edge region, can not also be completely covered
State rear surface regions；Aluminium conductive material forms rear-face contact locally opening diaphragm area 8 and silicon base, and it is non-open diaphragm area then not with
Silicon base forms contact.
The rear-face contact of aluminium electrode consists of the following parts：Main conductive ingredient be aluminium conductive electrode, silicon base and
Silicon substrate hole doping layer of the one layer of main doping component being placed between aluminium conductive electrode and silicon base for aluminium, the hole doping layer
It can also be doped with boron element；Hole doping layer hole doping a concentration of 5 × 1016~1 × 1021A atom/cubic centimetre；Institute
The thickness for stating hole doping layer is 1~15um.Between hole doping layer and aluminium electrode, it can further comprise one layer of alusil alloy
Layer, thickness are 1~5um.
A kind of preparation method of solar cell of the present invention, includes the following steps：
1) surface-texturing and cleaning are carried out to mixing gallium silicon base；
2) emitter preparation is carried out；
3) edge insulation processing is carried out；Insulating treatment method is wet etching method, and the wet etching method includes making
With containing HNO3, HF mixed acid solution carry out chemical attack or use include potassium hydroxide, sodium hydroxide, tetramethyl hydrogen-oxygen
Change the chemical corrosion method that the alkaline solutions such as ammonium carry out.
4) it carries out positive passivated reflection reducing and penetrates film preparation and passivating back film preparation；
5) local is overleaf carried out on passivating film and opens film；The local of passivating film opens film process, can be starched using chemical attack
Material forms local contact pattern, it is possible to use laser opens film method and forms local contact pattern.
6) the electrode slurry bed of material of conductive compositions is included in just back-patterned formation；
7) metallization heat treatment process is carried out.
In addition, in preparation process, annealing process also can further include.Further, local opens film method and includes changing
Learn etch, laser opens embrane method or mask collaboration chemical corrosion method.Include a step or several printing process in coating process,
And one or several drying courses, wherein the electrocondution slurry of a few steps can be identical, it can not also be identical.
Embodiment 1
The first step mixes monocrystalline gallium silicon chip and carries out surface-texturing；This mixes gallium silicon chip opposite side distance for 156.75mm, square
Shape, not boracic in silicon chip, a concentration of 2 × 10 containing gallium16A atom/cubic centimetre.It is clear in slot type that gallium silicon chip is mixed to this monocrystalline
The texturing on surface is completed in washing machine using NaOH solution, pyramid structure is formed on surface.Wherein 80 DEG C of solution temperature continues
Time 10min.And pass through HF pickling, washing, drying and etc., remove surface metal ion.
Second step carries out emitter preparation.The preparation of pn-junction is completed in tubular type heating diffusion furnace tube, uses N2Carry POCl3
Source.Spread 850 DEG C of peak temperature, 110 minutes diffusion times.
Third walks, and carries out insulation processing.Insulation processing is completed in Chained cleaning machine, the mixing using HF acid and nitric acid is molten
Liquid, the removal back side can cause the N-shaped doped region of electric leakage around the N-shaped doped region formed and edge is expanded.In addition in this processing step
In also include HF pickling and remove positive phosphorosilicate glass.
4th step carries out front passivated reflection reducing and penetrates the preparation of film and the preparation of backside passivation film.It is enhanced using tubular type
Plasma gas-phase deposit carries out the deposition of silicon nitride, and double-layer silicon nitride is as passivation and antireflective coating.Wherein underlying silicon nitride is thick
Spend 20nm, refractive index 2.20, upper silicon nitride thickness 40nm, refractive index 1.95.Backside passivation film is aoxidized using atomic layer deposition
Aluminium and aluminium oxide upper strata are covered with silicon nitride.Wherein aluminium oxide thickness be 10nm, silicon nitride thickness 200nm, silicon nitride folding
It is 2.2 to penetrate rate.
5th step carries out trepanning to the back side using laser, and using optical maser wavelength 532nm, hot spot is 90um diameter circulars,
Point spacing is 1mm, is uniformly distributed in entire surface in equilateral triangle.
6th step coats conductive material as required in the front and back of battery.We use silk screen in the present embodiment
Mode of printing carries out electrocondution slurry and is graphically coated with.Front uses the silver paste for penetrating silicon nitride as thin grid line slurry, thin grid line
Radical 100, connection electrode use the non-electrocondution slurry for burning type silicon nitride, connection electrode radical 4, connection electrode and thin grid
Line direction is orthogonal and is connected in intersection.The back side is first printed with 4 × 4 silver electrode using method for printing screen for mutual
Connection, each silver electrode region are 2mm × 20mm, and aluminium paste is printed in addition to this region and coats remaining entire table as aluminum back electrode
Face, except silver electrode and the entire cell backside in silicon base dorsal edge region, the back side is being completely covered just in aluminium electrode for aluminium electrode covering
Diaphragm area is opened on face antireflective coating/passivating film so that aluminium conductive material and substrate pass through on front surface antireflection film/passivating film
Diaphragm area formation is opened to be in direct contact.Such as Fig. 2 front description polarizing electrode schematic diagrames, Fig. 3 is backplate schematic diagram.
7th step carries out metallization heat treatment process.In the process, using chain-type sintering furnace, it is sintered peak temperature 850
DEG C, this temperature is to survey the temperature of silicon chip surface.
Embodiment 2
The first step mixes monocrystalline gallium silicon chip and carries out surface-texturing；This mixes gallium silicon chip opposite side distance for 156.75mm, square
Shape, boracic in silicon chip, boron concentration are 5 × 1016A atom/cubic centimetre, a concentration of 1 × 10 containing gallium14A atom/vertical
Square centimetre.The texturing that gallium silicon chip completes surface in groove-type cleaning machine using NaOH solution is mixed this monocrystalline, is formed on surface
Pyramid structure.Wherein 80 DEG C of solution temperature, duration 10min.And pass through HF pickling, washing, drying and etc., remove table
Face metal ion.
Second step carries out emitter preparation.The preparation of pn-junction is completed in tubular type heating diffusion furnace tube, uses N2Carry POCl3
Source.Spread 850 DEG C of peak temperature, 110 minutes diffusion times.
Third walks, and carries out insulation processing.Insulation processing is completed in Chained cleaning machine, the mixing using HF acid and nitric acid is molten
Liquid, the removal back side can cause the N-shaped doped region of electric leakage around the N-shaped doped region formed and edge is expanded.In addition in this processing step
In also include HF pickling and remove positive phosphorosilicate glass.
4th step carries out front passivated reflection reducing and penetrates the preparation of film and the preparation of backside passivation film.It is enhanced using tubular type
Plasma gas-phase deposit carries out the deposition of silicon nitride, and double-layer silicon nitride is as passivation and antireflective coating.Wherein underlying silicon nitride is thick
Spend 20nm, refractive index 2.20, upper silicon nitride thickness 40nm, refractive index 1.95.Backside passivation film is aoxidized using atomic layer deposition
Aluminium and aluminium oxide upper strata are covered with silicon nitride.Wherein aluminium oxide thickness be 10nm, silicon nitride thickness 200nm, silicon nitride folding
It is 2.2 to penetrate rate.
5th step carries out trepanning to the back side using laser, and using optical maser wavelength 532nm, hot spot is 90um diameter circulars,
Point spacing is 1mm, is uniformly distributed in entire surface in equilateral triangle.
6th step coats conductive material as required in the front and back of battery.We use silk screen in the present embodiment
Mode of printing carries out electrocondution slurry and is graphically coated with.Front uses the silver paste for penetrating silicon nitride as thin grid line slurry, thin grid line
Radical 100, connection electrode use the non-electrocondution slurry for burning type silicon nitride, connection electrode radical 4, connection electrode and thin grid
Line direction is orthogonal and is connected in intersection.The back side is first printed with 4 × 4 silver electrode using method for printing screen for mutual
Connection, each silver electrode region are 2mm × 20mm, and aluminium paste is printed in addition to this region and coats remaining entire table as aluminum back electrode
Face, except silver electrode and the entire cell backside in silicon base dorsal edge region, the back side is being completely covered just in aluminium electrode for aluminium electrode covering
Diaphragm area is opened on face antireflective coating/passivating film so that aluminium conductive material and substrate pass through on front surface antireflection film/passivating film
Diaphragm area formation is opened to be in direct contact.Such as Fig. 2 front description polarizing electrode schematic diagrames, Fig. 3 is backplate schematic diagram.
7th step carries out metallization heat treatment process.In the process, using chain-type sintering furnace, it is sintered peak temperature 850
DEG C, this temperature is to survey the temperature of silicon chip surface.
The light decay result such as following table of the actual test for the battery that above-mentioned two embodiment is prepared：
Light decay tests test condition：Light intensity 1suns, 65 DEG C of environment temperature, the time is for 24 hours.
Table 1
Data show that the light decay of battery is controlled less than 3% in table.The preferable light decay for inhibiting battery.
Protection scope of the present invention is not limited to the above embodiments, for those of ordinary skill in the art, if
If the various changes and deformations that carried out to the present invention belong in the range of the claims in the present invention and equivalent technologies, the meaning of the present invention
Including figure is also changed and is deformed comprising these.
Claims (10)
1. a kind of monocrystalline mixes gallium back of the body passivating solar battery, which is characterized in that is included successively by front to the back side：Front electrode (6),
Front surface antireflection film/passivating film (3), emitter (2), monocrystalline mix gallium silicon base (1), backside passivation film (4) and backplate；Institute
The backplate stated includes aluminium electrode (5) and back side silver electrode (7).
2. a kind of monocrystalline according to claim 1 mixes gallium solar cell, which is characterized in that the monocrystalline mixes gallium silicon base
(1) doping concentration of gallium element is 1 × 10 in13~1 × 1017A atom/cubic centimetre.
3. a kind of monocrystalline according to claim 1 mixes gallium back of the body passivating solar battery, which is characterized in that the monocrystalline mixes gallium
For silicon base (1) also doped with boron element, the doping concentration of boron element is 1 × 1013~1 × 1017A atom/cubic centimetre.
4. a kind of monocrystalline according to claim 1 mixes gallium back of the body passivating solar battery, which is characterized in that the front electrode
(6) it is that front surface antireflection film/passivating film (3) is partially or fully penetrated or by positive antireflective by sintering by conductive material
It opens diaphragm area and is in direct contact with emitter (2) formation in part on film/passivating film (3).
5. a kind of monocrystalline according to claim 1 mixes gallium back of the body passivating solar battery, which is characterized in that the passivating back
Film (4) offers part and opens diaphragm area (8), and aluminium electrode (5) opens diaphragm area (8) by part and mixes gallium silicon base (1) with monocrystalline
The back side forms contact.
6. a kind of monocrystalline according to claim 6 mixes gallium back of the body passivating solar battery, which is characterized in that the aluminium electrode
(5) and monocrystalline mixes the hole doping layer for including that one layer of doping component is aluminium between gallium silicon base (1), the thickness of the hole doping layer
It spends for 1~15um.
7. a kind of monocrystalline according to claim 6 mixes gallium back of the body passivating solar battery, which is characterized in that the hole doping
Also doped with boron in layer, boron element doping concentration is 5 × 1016~1 × 1021A atom/cubic centimetre.
8. a kind of monocrystalline according to claim 7 mixes gallium back of the body passivating solar battery, which is characterized in that the hole doping
One layer of alusil alloy layer is further included between layer and aluminium electrode (5), alusil alloy layer thickness is 1~5um.
9. a kind of monocrystalline according to claim 1 mixes gallium back of the body passivating solar battery, which is characterized in that the positive anti-reflection
Film/passivating film (3) is penetrated as one or more lamination structures in silica, silicon nitride, silicon oxynitride, aluminium oxide and carborundum films
Into；The refractive index of front surface antireflection film/passivating film (3) is 1.5~2.5,50~100nm of thickness.
10. the monocrystalline described in a kind of claim 1 to 9 any one mixes the preparation method of gallium back of the body passivating solar battery, feature
It is, includes the following steps：
1) it mixes monocrystalline gallium silicon base (1) and carries out surface-texturing and cleaning；
2) gallium silicon base (1) front is mixed in monocrystalline to carry out preparing emitter (2)；
3) it mixes monocrystalline gallium silicon base (1) and carries out edge insulation processing；
4) it mixes monocrystalline the positive back side of gallium silicon base (1) and carries out front surface antireflection film/passivating film (3) and backside passivation film (4) respectively
Preparation；
5) local is overleaf carried out on passivating film (4) and opens film；
6) monocrystalline is mixed gallium silicon base (1) front, the back side carry out electrocondution slurry be graphically coated with；
7) it carries out metallization heat treatment process and prepares front electrode (6) and backplate respectively.
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