JP2012253335A5 - Photoelectric conversion device - Google Patents

Claims (5)

And a single crystal silicon substrate having one conductivity type,
A first silicon semiconductor region including a crystalline silicon region and an amorphous silicon region formed on one surface of the single crystal silicon substrate;
A second silicon semiconductor region formed on the first silicon semiconductor region;
A third silicon semiconductor region including a crystalline silicon region and an amorphous silicon region formed on the other surface of the single crystal silicon substrate;
A fourth silicon semiconductor region formed in the third silicon semiconductor region,
A translucent conductive film formed on the fourth silicon semiconductor region;
Between a pair of electrodes,
The second silicon semiconductor region has the same conductivity type as the single crystal silicon substrate,
The second silicon semiconductor region has a higher carrier density than the single crystal silicon substrate,
The photoelectric conversion device according to claim 4, wherein the fourth silicon semiconductor region has a conductivity type opposite to that of the single crystal silicon substrate . In claim 1,
The first silicon semiconductor region and the crystalline silicon region included in the third silicon semiconductor region, a photoelectric conversion device, wherein the crystalline silicon including that inherited the atomic arrangement of the single crystal silicon substrate. In claim 1 or 2,
The photoelectric conversion device, wherein the first silicon semiconductor region and the third silicon semiconductor region are i-type . In any one of claims 1 to 3,
The second silicon semiconductor area photoelectric conversion device characterized by comprising an amorphous silicon or microcrystalline silicon. In any one of Claims 1 thru | or 4,
The photoelectric conversion device, wherein the fourth silicon semiconductor region includes amorphous silicon or microcrystalline silicon.