TW201626593A - 太陽能電池及太陽能電池之製造方法 - Google Patents
太陽能電池及太陽能電池之製造方法 Download PDFInfo
- Publication number
- TW201626593A TW201626593A TW104129041A TW104129041A TW201626593A TW 201626593 A TW201626593 A TW 201626593A TW 104129041 A TW104129041 A TW 104129041A TW 104129041 A TW104129041 A TW 104129041A TW 201626593 A TW201626593 A TW 201626593A
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- solar cell
- main surface
- oxide film
- boron
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 132
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 39
- 229910052796 boron Inorganic materials 0.000 claims abstract description 39
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 15
- 229910052732 germanium Inorganic materials 0.000 claims description 38
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 38
- 229910052715 tantalum Inorganic materials 0.000 claims description 26
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 26
- 229910052707 ruthenium Inorganic materials 0.000 claims description 25
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 23
- 238000006243 chemical reaction Methods 0.000 abstract description 33
- 230000006866 deterioration Effects 0.000 abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052710 silicon Inorganic materials 0.000 abstract 6
- 239000010703 silicon Substances 0.000 abstract 6
- 230000003287 optical effect Effects 0.000 abstract 1
- 238000002161 passivation Methods 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 description 16
- 230000001681 protective effect Effects 0.000 description 13
- 238000001782 photodegradation Methods 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 7
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 5
- 229910001936 tantalum oxide Inorganic materials 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000006731 degradation reaction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 229910021513 gallium hydroxide Inorganic materials 0.000 description 2
- DNUARHPNFXVKEI-UHFFFAOYSA-K gallium(iii) hydroxide Chemical compound [OH-].[OH-].[OH-].[Ga+3] DNUARHPNFXVKEI-UHFFFAOYSA-K 0.000 description 2
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- -1 ruthenium nitride Chemical class 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
- H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
本發明係一種太陽能電池及太陽能電池之製造方法,係加以摻雜有鎵,具有加以形成pn接合之矽基板的太陽能電池,其特徵為於前述矽基板之主表面之中至少有p型範圍之第一主表面,加以設置矽熱氧化膜,前述矽基板係更加以摻雜硼之構成之太陽能電池。且經由此,加以提供作為基板表面保護膜而具有矽熱氧化膜之構成同時,抑制光劣化,且可具有高變換效率之太陽能電池,及太陽能電池之製造方法。
Description
本發明係有關太陽能電池及太陽能電池之製造方法。
使用將硼(B)作為摻雜劑之矽基板的太陽能電池係有經由光照射而其變換效率降低之問題,對此,使用將鎵(Ga)作為摻雜劑之矽基板的太陽能電池係知道未有光劣化者(例如,參照專利文獻1)。
另一方面,作為矽基板之表面保護方法,自以往知道有矽熱氧化膜則具有優越特性者。
[專利文獻1]日本專利第3679366號
但摻雜鎵之矽基板(以下,亦稱為「鎵摻雜
基板」)係當進行熱氧化時,鎵在矽中與氧化矽中之擴散係數以及溶解度的不同,具有基板表面的摻雜劑濃度為大而降低之性質。因此,當使用鎵摻雜基板於太陽能電池時,經由基板表面的摻雜劑濃度之下降而變換效率降低之故,對於鎵摻雜基板之熱氧化的適用係有困難的問題。
本發明係有鑑於上述問題點而作為之構成,其目的為提供:作為基板表面保護膜而具有矽熱氧化膜之構成同時,抑制光劣化,且可具有高變換效率之太陽能電池,以及提供如此之太陽能電池之製造方法。
為了達成上述目的,本發明係提供:加以摻雜有鎵,具有加以形成pn接合之矽基板的太陽能電池,其特徵為於前述矽基板之主表面之中至少有p型範圍之第一主表面,加以設置矽熱氧化膜,前述矽基板係更加以摻雜硼之構成者。
具有如此之構成的太陽能電池係因矽基板則以鎵加以摻雜之故,可抑制光劣化者。另外,此太陽能電池係因矽基板則更以硼加以摻雜之故,即使於矽基板之主表面之中至少有p型範圍之第一主表面,加以設置矽熱氧化膜,亦可防止基板表面之摻雜劑濃度大大下降,而進而可防止初期變換效率的下降者。更且,由作為將作為基板表面保護膜而具有優越特性的矽熱氧化膜,設置於矽基板表面之構成者,使變換效率提升之同時,可作為信賴性
高,且高品質之太陽能電池者。
此時,至少前述矽基板之前述第一主表面的全面則為p型者為佳。
對於加以設置矽熱氧化膜之矽基板的第一主表面之全面為p型之太陽能電池而言,可最佳地適用本發明者。
此時,前述矽基板中的硼濃度則為5×1014原子/cm3以上、1×1016原子/cm3以下者為佳。
矽基板中的硼濃度則如為如上述之範圍,可更有效果地使太陽能電池之初期特性提升,進而亦可高維持光照射後之變換效率者。
另外,本發明係提供:包含準備加以摻雜鎵及硼之矽基板的工程,和形成pn接合於前述矽基板內之工程,和於前述矽基板之主表面之中至少有p型範圍之第一主表面,形成矽熱氧化膜之工程者作為特徵的太陽能電池之製造方法。
如此,由使用以鎵加以摻雜之矽基板者,可抑制所製造之太陽能電池的光劣化。另外,因所使用之矽基板則更以硼加以摻雜之故,即使於矽基板之主表面之中至少有p型範圍之第一主表面,形成矽熱氧化膜,亦可防止基板表面之摻雜劑濃度大大下降,而進而可防止太陽能電池之初期變換效率的下降者。更且,由作為將作為基板表面保護膜而具有優越特性的矽熱氧化膜,形成於矽基板表面之構成者,使變換效率提升之同時,可製造信賴性
高,且高品質之太陽能電池者。
此時,前述所準備之矽基板中的硼濃度,作為5×1014原子/cm3以上、1×1016原子/cm3以下者為佳。
如使用具有如此範圍之硼濃度的矽基板,可更有效果地使所製造之太陽能電池之初期特性提升,進而亦可高維持光照射後之變換效率者。
如以上,本發明之太陽能電池係作為基板表面保護膜而具有矽熱氧化膜之構成同時,抑制光劣化,且具有高變換效率者。另外,本發明之太陽能電池之製造方法係可製造如此之太陽能電池者。
10‧‧‧太陽能電池
11‧‧‧矽基板
12、12’‧‧‧矽熱氧化膜
13、13’‧‧‧矽氮化膜
14‧‧‧表面電極
15‧‧‧射極層
16‧‧‧背面電極
圖1係顯示本發明之太陽能電池之實施形態之一例的剖面圖。
圖2係顯示本發明之太陽能電池之製造方法的實施形態之一例的工程剖面圖。
圖3係顯示本發明之太陽能電池之製造方法的實施形態之一例的工程剖面圖。
圖4係顯示本發明之太陽能電池之實施形態之其他例的剖面圖。
圖5係顯示矽基板中的硼濃度,和使用此之太陽能電
池之初期變換效率,劣化後變換效率,及劣化率的關係之圖表。
以下,對於本發明,作為實施形態之一例,參照圖的同時,詳細加以說明,但本發明係並不限定於此者。
如前述,使用將硼作為摻雜劑之矽基板的太陽能電池係有經由光照射而其變換效率降低之問題,對此,使用將鎵作為摻雜劑之矽基板的太陽能電池係知道未有光劣化者。在另一方面,作為矽基板之表面保護方法,自以往知道矽熱氧化膜具有優越特性者,但鎵摻雜基板係具有產生熱氧化時,基板表面之摻雜劑濃度大大下降之特性,而經由基板表面之摻雜劑濃度的下降而變換效率則下降之故,對於鎵摻雜基板之熱氧化的適用係成為困難。
因此,本發明者們,係對於作為基板表面保護膜而具有矽熱氧化膜之構成同時,抑制光劣化,且可具有高變換效率之太陽能電池,重複銳意檢討。其結果,將加上於加以摻雜鎵之情況,以硼加以摻雜之矽基板,作為太陽能電池之光電變換層用基板而採用,而由設置矽熱氧化膜於此基板表面者,發現作為基板表面保護膜而具有矽熱氧化膜之構成同時,抑制光劣化,且可具有高變換效率者,而至構成本發明。
以下,參照圖1之同時,說明本發明之太陽
能電池之實施形態的一例。
圖1之太陽能電池10係具有:加以摻雜鎵及硼之矽基板(例如,p型矽基板)11,和加以設置於矽基板11表面(第二主表面19)之射極層15,和加以設置於矽基板11背面(第一主表面18)之矽熱氧化膜12,而成為由p型之矽基板11,和加以形成於矽基板11表面部分之射極層15而加以形成pn接合的構成。射極層15係例如,為n型擴散層。然而,於矽基板11兩面(第一主表面18及第二主表面19),加以設置矽熱氧化膜12、12’亦可。另外,對於矽熱氧化膜12、12’上係將反射防止作為目的,而加以設置矽氮化膜13、13’亦可。在此,「第一主表面」係指矽基板之有p型範圍之主表面,而「第二主表面」係指與「第一主表面」相反的主表面。另外,p型範圍係亦有位於兩主表面者,但此情況係將任一之表面,訂定為「第一主表面」,而將其相反的主表面,訂定為「第二主表面」。總之,本發明係於具有p型範圍的主表面,具有矽熱氧化膜之構成。
圖1之太陽能電池10係可於矽基板11表面(第二主表面19)側,具有藉由射極層15與開口部21而加以電性連接之表面電極14者,而於矽基板11背面(第一主表面18)側,具有藉由矽基板11與開口部22而加以電性連接之背面電極16者。
太陽能電池10係因矽基板11則以鎵而加以摻雜之故,可抑制光劣化者。另外,因矽基板11則更以
硼加以摻雜之故,即使於矽基板11之主表面之中至少有p型範圍之第一主表面18,加以設置矽熱氧化膜12,亦可防止基板表面之摻雜劑濃度大大下降,而進而可防止初期變換效率的下降者。更且,由作為將作為基板表面保護膜而具有優越特性的矽熱氧化膜12,設置於矽基板11表面之構成者,可作為信賴性高,且高品質之太陽能電池者。
太陽能電池10之至少矽基板11之第一主表面18全面為p型者為佳。
對於加以設置矽熱氧化膜12之矽基板11的第一主表面18之全面為p型之太陽能電池而言,可最佳地適用本發明者。
矽基板11中的硼濃度則為5×1014原子/cm3以上、1×1016原子/cm3以下者為佳。
矽基板中的硼濃度則如為如上述之範圍,可更有效果地使太陽能電池之初期特性提升,進而亦可高維持光照射後之變換效率者。特別,當硼濃度超過5×1014原子/cm3時,經由硼摻雜劑之存在而成為呈產生有經由光照射之變換效率的下降(光劣化)。但於鎵摻雜基板,可賦予經由矽熱氧化膜之保護效果之故,在硼濃度則為5×1014原子/cm3以上、1×1016原子/cm3以下之範圍中,初期效率之改善效果則較光劣化為佳。因此,比較於硼摻雜量則較此為少之情況(即,未有經由硼摻雜之光劣化的情況),光劣化後之變換效率亦為高。
在上述所說明之本發明之太陽能電池係作為基板表面保護膜而具有矽熱氧化膜之構成同時,抑制光劣化,且可具有高變換效率者。
接著,參照圖2及圖3之同時,說明本發明之太陽能電池之製造方法的實施形態之一例。
首先,準備加以摻雜鎵及硼之矽基板(例如,p型矽基板)11(參照圖2(a))。加以摻雜鎵及硼之矽基板係例如,經由CZ法或FZ法而摻雜鎵與硼,育成矽單結晶錠,在裁切此等之後,可經由施以特定的加工而得到者。矽基板11係於作為太陽能電池時之至少受光面側(即,在圖1之第二主表面19側),為了反射率降低而加以實施形成稱作為紋理之細微的凹凸之紋理處理者為佳。
接著,於矽基板11之第二主表面19側,由形成射極層15者,形成pn接合(參照圖2(b))。射極層15係例如,可由經由磷擴散而形成n型擴散層者而形成。此情況,形成射極層15之表面係指與第一主表面18相反的主表面。
接著,經由在氧氣環境中而熱氧化矽基板11之時,於矽基板11之至少第一主表面18,形成矽熱氧化膜12(參照圖2(c))。然而,於矽基板11兩面(即,第一主表面18及第二主表面19),形成矽熱氧化膜12、12’亦可。加以摻雜鎵之矽基板係當產生熱氧化時,因鎵在矽單結晶中,矽氧化膜中之擴散係數及溶解度之不同,
因具有基板表面的鎵濃度大大下降之特質之故,經由上述之熱氧化,矽基板11之第一主表面18附近及第二主表面19附近之鎵濃度係成為較矽基板11之內部的鎵濃度為小。但矽基板11係因亦加以摻雜p型摻雜劑的硼之故,矽基板11之第一主表面18附近及第二主表面19附近之p型摻雜劑的總和濃度係與僅加以摻雜鎵之情況作比較而可增加者。
然而,在矽熱氧化膜形成後,於加以形成於矽基板11之第一主表面18的矽熱氧化膜12上及加以形成於第二主表面19之矽熱氧化膜12’上,將反射防止作為目的而各形成矽氮化膜13、13’亦可(參照圖3(a))。
在矽氮化膜形成後,可將為了於矽基板11之第二主表面19上形成表面電極14之金屬製膜者(參照圖3(b))。表面電極14係經由銀而形成者為佳。表面電極14之形成方法係可使用公知的方法,例如,可經由以網版印刷而乾燥,燒成包含Ag之電糊之時而進行者。此時,未將矽熱氧化膜12’及矽氮化膜13’開口而於膜表面印刷銀電糊,經由在燒成時而使此等膜貫通之時,可電性連接表面電極14與射極層15者。
在表面電極形成後,除去一部分加以形成於矽基板11之第一主表面18的矽熱氧化膜12及矽氮化膜13,在其之後,於矽基板11之第一主表面18上,可將為了形成背面電極16之金屬進行製膜者。背面電極16係經由鋁而形成者為佳。背面電極16之形成方法係可使用公
知的方法,例如,可經由蒸鍍Al於全面之時而進行者。由如此作為而形成背面電極16,可得到圖1之太陽能電池10者。
如上述,由使用以鎵加以摻雜之矽基板者,可抑制光劣化。另外,因矽基板則更以硼加以摻雜之故,即使於矽基板之主表面之中至少有p型範圍之第一主表面,形成矽熱氧化膜,亦可防止基板表面之摻雜劑濃度大大下降,而進而可防止初期變換效率的下降者。更且,由作為將作為基板表面保護膜而具有優越特性的矽熱氧化膜,形成於矽基板表面之構成者,可製造信賴性高,且高品質之太陽能電池者。
另外,所使用之矽基板中的硼濃度,作為5×1014原子/cm3以上、1×1016原子/cm3以下者為佳。
如使用具有如此範圍之硼濃度的矽基板,可更有效果地使所製造之太陽能電池之初期特性提升,至少光劣化亦可解決,進而亦可高維持光照射後之變換效率者。
如根據在上述所說明本發明之太陽能電池之製造方法,即使作為基板表面保護膜而形成矽熱氧化膜之構成,亦可抑制光劣化,且可製造具有高變換效率之太陽能電池者。
以下,參照圖4之同時,說明本發明之太陽能電池之實施形態的其他例。
圖4之太陽能電池10’係除了射極層15加以
設置於背面(第二主表面19)側的點之外,與圖1之太陽能電池10為同樣。然而,圖4之太陽能電池10’係除了射極層15則加以形成於背面(第二主表面19)側的點之外,可以與使用圖2而說明之製造方法同樣的製造方法而製造者。但,圖4之太陽能電池10’之表面電極14係以Al而加以形成者為佳,而背面電極16係以Ag而加以形成者為佳。
在圖4之太陽能電池10’中,與圖1之太陽能電池10同樣,作為基板表面保護膜而具有矽熱氧化膜之構成同時,可抑制光劣化,且具有高變換效率者。
以下,顯示實施例而更具體說明本發明,但本發明係並不加以限定於此實施例者。
經由圖2及圖3所示之製造工程而製作圖1所示之本發明的太陽能電池10。
首先,作為矽基板11,準備複數厚度200μm、阻抗率1Ω.cm、面方位{100}的鎵及硼摻雜p型保持切斷矽基板(參照圖2(a))。在此,經由CZ法而使硼摻雜量變化而製作複數之矽單結晶錠,自所製作之矽單結晶錠切出矽基板,而任一之硼摻雜量的矽基板阻抗率呈成為1Ω.cm地預先進行阻抗率測定,而選擇矽基板。
然而,鎵摻雜量係依據硼摻雜量,而調整阻抗率呈成為1Ω.cm。
接著,如以下作為而進行紋理處理。經由熱濃氫氧化鎵水溶液而除去矽基板11之損傷層之後,進行浸漬於氫氧化鎵及2-丙醇之水溶液中的紋理形成。
接著,由將矽基板11,在氧氯化磷環境下,以870℃進行熱處理者,進行磷擴散。此時,在重複複數之矽基板11之背面彼此之狀態進行熱處理。以氟酸而進行擴散後之磷玻璃層之除去,再使其洗淨後乾燥。如此作為,於矽基板11之第二主表面19側,形成n型擴散層之射極層15(參照圖2(b))。
接著,如以下作為而進行熱氧化。以鹽酸/過氧化氫混合溶液中進行洗淨後,在氧氣環境中,進行900℃、40分之熱處理,於矽基板11之背面(第一主表面18),形成15nm之矽熱氧化膜12(參照圖2(c))。此時,對於矽基板11表面(第二主表面19)亦加以形成有矽熱氧化膜12’。
接著,如以下作為而進行矽氮化膜形成。使用電漿CVD裝置,在SiH4、NH3、H2之混合氣體環境,將膜厚80nm之矽氮化膜13、13’,形成於矽基板11之背面側(第一主表面18側)及矽基板11之表面側(第二主表面19側)之矽熱氧化膜12、12’上(參照圖3(a))。
接著,將為了形成表面電極14之銀製膜,在
網版印刷Ag電糊之後使其乾燥者而加以進行。
接著,在780℃之空氣環境下而進行燒成,形成表面電極14。此時,表面電極14係貫通矽氮化膜13’與矽熱氧化膜12’,再與射極層15接觸(參照圖3(b))。
接著,經由雷射,而為1mm間隔的線狀,除去矽基板11之背面(第一主表面18)側的矽氮化膜13及矽熱氧化膜12。
接著,由將背面電極16之形成,蒸鍍Al於矽基板11之背面(第一主表面18)全面者而加以進行。經由此,而製造圖1所示之太陽能電池10。
對於如上述作為所製作之太陽能電池10,由依據25℃者,進行放射照度量100mW/cm2、光譜AM1.5全域之擬似太陽光照射時之電性特性之測定。電性特性係對於初期特性(即,初期變換效率),和劣化後特性(即,在光連續照射2小時後,以與初期變換效率同條件測定之劣化後變換效率),進行測定。在此,變換效率係為(自太陽能電池之輸出/射入至太陽能電池的光能量)×100。將測定結果示於圖5。在圖5中,劣化率係作成(劣化後變換効率/初期變換効率)×100。
如自圖5了解到,當矽基板中之硼濃度超過5×1014原子/cm3時,經由基板表面附近之p型摻雜劑濃度的增加,以及經由氧化膜之保護提升效果而初期變換效率係提升,但開始有光劣化。但,在矽基板中的硼濃度為在
5×1014~1×1016原子/cm3之範圍中,初期特性的改善效果則較光劣化為大之故,比較於硼量為少(未有劣化)之情況,變換效率則成為較劣化後為高,而知道上述之範圍的硼濃度為特別理想者。
然而,本發明係不限定於上述實施形態者。上述實施形態係為例示,具有與記載於本發明之申請專利範圍的技術思想實質上同一之構成,而達到同樣的作用效果者係即使為任何構成均包含於本發明之技術範圍。
10‧‧‧太陽能電池
11‧‧‧矽基板
12、12’‧‧‧矽熱氧化膜
13、13’‧‧‧矽氮化膜
14‧‧‧表面電極
15‧‧‧射極層
16‧‧‧背面電極
18‧‧‧第一主表面
19‧‧‧第二主表面
21、22‧‧‧開口部
Claims (5)
- 一種太陽能電池,係加以摻雜有鎵,具有加以形成pn接合之矽基板的太陽能電池,其特徵為於前述矽基板之主表面之中至少有p型範圍之第一主表面,加以設置矽熱氧化膜,前述矽基板係更加以摻雜硼之構成者。
- 如申請專利範圍第1項記載之太陽能電池,其中,至少前述矽基板之前述第一主表面之全面為p型者。
- 如申請專利範圍第1項或第2項記載之太陽能電池,其中,前述矽基板中之硼濃度為5×1014原子/cm3以上、1×1016原子/cm3以下者。
- 一種太陽能電池之製造方法,其特徵為包含:準備加以摻雜鎵及硼之矽基板的工程,和形成pn接合於前述矽基板內之工程,和於前述矽基板之主表面之中至少有p型範圍之第一主表面,形成矽熱氧化膜之工程者。
- 如申請專利範圍第4項記載之太陽能電池之製造方法,其中,將前述所準備之矽基板的硼濃度,作為5×1014原子/cm3以上、1×1016原子/cm3以下者。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014180220A JP5830147B1 (ja) | 2014-09-04 | 2014-09-04 | 太陽電池及び太陽電池の製造方法 |
JP2014-180220 | 2014-09-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201626593A true TW201626593A (zh) | 2016-07-16 |
TWI673886B TWI673886B (zh) | 2019-10-01 |
Family
ID=54784370
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW104129041A TWI673886B (zh) | 2014-09-04 | 2015-09-02 | 太陽能電池及太陽能電池之製造方法 |
Country Status (12)
Country | Link |
---|---|
US (1) | US20170263791A1 (zh) |
EP (1) | EP3190628B1 (zh) |
JP (1) | JP5830147B1 (zh) |
KR (1) | KR102420807B1 (zh) |
CN (1) | CN106796964B (zh) |
BR (1) | BR112017003041A2 (zh) |
ES (1) | ES2780048T3 (zh) |
MY (1) | MY180755A (zh) |
RU (1) | RU2017105087A (zh) |
SG (1) | SG11201701418RA (zh) |
TW (1) | TWI673886B (zh) |
WO (1) | WO2016035229A1 (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6946706B2 (ja) * | 2017-04-18 | 2021-10-06 | 市光工業株式会社 | 光変換装置の製造方法及び光変換装置 |
CN108133976A (zh) * | 2018-01-29 | 2018-06-08 | 泰州隆基乐叶光伏科技有限公司 | 一种单晶掺镓背钝化太阳电池及其制备方法 |
CN108172637A (zh) * | 2018-01-29 | 2018-06-15 | 泰州隆基乐叶光伏科技有限公司 | 一种多晶掺镓背钝化太阳电池及其制备方法 |
CN111509082B (zh) * | 2020-03-20 | 2024-05-24 | 中国科学院宁波材料技术与工程研究所 | 掺镓多晶硅薄膜制备方法及其在太阳电池的应用 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1114885B1 (en) | 1999-05-28 | 2006-03-01 | Shin-Etsu Handotai Co., Ltd | CZ SINGLE CRYSTAL DOPED WITH Ga AND WAFER AND METHOD FOR PRODUCTION THEREOF |
JP2002076399A (ja) * | 2000-08-30 | 2002-03-15 | Shin Etsu Handotai Co Ltd | 太陽電池セルの製造方法およびこの方法で製造された太陽電池セル |
JP2002083981A (ja) * | 2000-09-07 | 2002-03-22 | Shin Etsu Handotai Co Ltd | 太陽電池セルおよびその製造方法 |
TW480737B (en) * | 2000-10-06 | 2002-03-21 | Shinetsu Handotai Kk | Solar cell and method of manufacture thereof |
JP2003282901A (ja) * | 2002-03-27 | 2003-10-03 | Shin Etsu Handotai Co Ltd | 太陽電池モジュールの製造方法 |
JP4118187B2 (ja) | 2003-05-09 | 2008-07-16 | 信越半導体株式会社 | 太陽電池の製造方法 |
ATE547812T1 (de) * | 2007-07-18 | 2012-03-15 | Imec | Verfahren zur herstellung einer emitterstruktur und daraus resultierende emitterstrukturen |
WO2009052511A2 (en) * | 2007-10-18 | 2009-04-23 | Belano Holdings, Ltd. | Mono-silicon solar cells |
WO2010147260A1 (en) * | 2009-06-18 | 2010-12-23 | Lg Electronics Inc. | Solar cell and method of manufacturing the same |
KR101745683B1 (ko) * | 2011-01-14 | 2017-06-09 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
EP2715805B1 (en) | 2011-06-03 | 2016-04-06 | MEMC Singapore Pte. Ltd. | Processes for suppressing minority carrier lifetime degradation in silicon wafers |
WO2013157090A1 (ja) * | 2012-04-18 | 2013-10-24 | 株式会社日立製作所 | 太陽電池およびその製造方法 |
KR101631450B1 (ko) * | 2013-03-05 | 2016-06-17 | 엘지전자 주식회사 | 태양 전지 |
-
2014
- 2014-09-04 JP JP2014180220A patent/JP5830147B1/ja active Active
-
2015
- 2015-06-12 US US15/503,854 patent/US20170263791A1/en active Pending
- 2015-06-12 MY MYPI2017700470A patent/MY180755A/en unknown
- 2015-06-12 ES ES15838584T patent/ES2780048T3/es active Active
- 2015-06-12 BR BR112017003041A patent/BR112017003041A2/pt not_active Application Discontinuation
- 2015-06-12 EP EP15838584.9A patent/EP3190628B1/en active Active
- 2015-06-12 SG SG11201701418RA patent/SG11201701418RA/en unknown
- 2015-06-12 KR KR1020177003896A patent/KR102420807B1/ko active IP Right Grant
- 2015-06-12 RU RU2017105087A patent/RU2017105087A/ru unknown
- 2015-06-12 CN CN201580044524.3A patent/CN106796964B/zh active Active
- 2015-06-12 WO PCT/JP2015/002959 patent/WO2016035229A1/ja active Application Filing
- 2015-09-02 TW TW104129041A patent/TWI673886B/zh active
Also Published As
Publication number | Publication date |
---|---|
JP2016054255A (ja) | 2016-04-14 |
EP3190628B1 (en) | 2020-01-15 |
EP3190628A4 (en) | 2018-08-22 |
TWI673886B (zh) | 2019-10-01 |
SG11201701418RA (en) | 2017-03-30 |
CN106796964B (zh) | 2018-11-20 |
MY180755A (en) | 2020-12-08 |
KR20170053614A (ko) | 2017-05-16 |
ES2780048T3 (es) | 2020-08-21 |
EP3190628A1 (en) | 2017-07-12 |
JP5830147B1 (ja) | 2015-12-09 |
KR102420807B1 (ko) | 2022-07-13 |
CN106796964A (zh) | 2017-05-31 |
BR112017003041A2 (pt) | 2017-11-21 |
US20170263791A1 (en) | 2017-09-14 |
RU2017105087A (ru) | 2018-10-04 |
WO2016035229A1 (ja) | 2016-03-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8110431B2 (en) | Ion implanted selective emitter solar cells with in situ surface passivation | |
JP5414298B2 (ja) | 太陽電池の製造方法 | |
US20110132444A1 (en) | Solar cell including sputtered reflective layer and method of manufacture thereof | |
JP6392385B2 (ja) | 太陽電池の製造方法 | |
US20170077321A1 (en) | Solar cell element, method for manufacturing solar cell element and solar cell module | |
KR101872786B1 (ko) | 태양 전지의 불순물층 형성 방법 및 태양 전지의 제조 방법 | |
JP5737204B2 (ja) | 太陽電池及びその製造方法 | |
JP5338702B2 (ja) | 太陽電池の製造方法 | |
TWI518937B (zh) | Manufacture of solar cells | |
TWI673886B (zh) | 太陽能電池及太陽能電池之製造方法 | |
US20130247981A1 (en) | Solar cell fabrication using a pre-doping dielectric layer | |
JP6537722B2 (ja) | 光起電力素子およびその製造方法 | |
KR20140101287A (ko) | 결정 실리콘형 태양 전지, 및 그 제조 방법 | |
US11222991B2 (en) | Solar cell and method for manufacturing the same | |
JP4614655B2 (ja) | 光起電力装置の製造方法 | |
JP5848417B1 (ja) | 太陽電池及び太陽電池の製造方法 |