CN105047695B - 用于高电子迁移率晶体管的高阻衬底以及生长方法 - Google Patents
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Abstract
本发明提供了一种用于高电子迁移率晶体管的高阻衬底及其生长方法。所述衬底包括支撑衬底和支撑衬底表面的高阻层，所述高阻层材料为氮化物，其特征在于，所述高阻层中包含由多个掺杂层和多个非掺杂层交替设置的周期性结构，所述掺杂层的材料为含有深能级掺杂元素的氮化物。本发明的优点在于在保证深能级掺杂浓度导致高阻特性同时，也能很好地保证外延层优良的晶体质量。
Description
技术领域
本发明涉及半导体材料领域，尤其涉及一种用于高电子迁移率晶体管的高阻衬底以及生长方法。
背景技术
氮化物半导体如氮化镓(GaN)及其合金氮化铝镓(AlGaN)等是重要的宽禁带化合物半导体。由于具有大的禁带宽度、高的击穿电场，高的电子饱和漂移速度和峰值漂移速度，更重要的是AlGaN/GaN异质结界面形成有高电子浓度和高电子迁移率的二维电子气(2DEG)，因此氮化物半导体在高温、高频、大功率、抗辐射微波器件或高功率电子器件及其电路中有非常重要的应用前景。
为了实现氮化镓基高电子迁移率晶体管(HEMT)的夹断等性能，在氮化镓基HEMT器件材料结构中其导电沟道必须生长在半绝缘的氮化物(氮化镓和低铝组分的氮化铝镓)基板上，该氮化物基板的晶体质量和高阻特性直接影响器件的夹断特性、击穿电压、漏电流大小、寿命及可靠性等性能，因此应用于氮化镓基电子器件的半绝缘氮化物在金属有机物化学沉积(MOCVD)外延生长技术中至关重要。
为了实现氮化物的高阻半绝缘化，需在氮化物中引入深能级杂质来陷住导电载流子。在MOCVD生长技术中，通常有两种方法来实现：一种是通过调节生长条件，利用金属有机源(MO)，调节生长气氛中的C杂质，进行生长过程中非有意地掺杂，使C杂质在氮化镓材料中形成深能级，从而实现高阻特性。但这种方法对外延生长条件要求较苛刻，生长窗口较窄，且不是氮化物的最佳晶体质量生长条件。第二种方法是通过在MOCVD外延生长过程中有意地掺入一定浓度的深能级杂质，如Fe、Mn、Cu、Co等。这种方法由于其在氮化物中固溶度的限制，不能随意掺杂很高的浓度，否则会引起其上生长的其他外延层的晶体质量的下降，反而恶化器件电性能如漏电流增大、不耐压、频率降低。因此，为了提高氮化镓基高电子迁移率晶体管器件的夹断开关特性、减小电流泄露，提高工作电压，增强其稳定性及可靠性，发展一种高晶体质量、高电阻率半绝缘的氮化物外延生长技术是必要的。
发明内容
本发明所要解决的技术问题是，提供一种用于高电子迁移率晶体管的高阻衬底以及生长方法，能够同时满足高阻和晶体质量的要求。
为了解决上述问题，本发明提供了一种用于高电子迁移率晶体管的高阻衬底，包括支撑衬底和支撑衬底表面的高阻层，所述高阻层材料为氮化物，其特征在于，所述高阻层中包含由多个掺杂层和多个非掺杂层交替设置的周期性结构，所述掺杂层的材料为含有深能级掺杂元素的氮化物。
可选的，所述高阻层中的掺杂层和非掺杂层的材料各自独立地选自于GaN、Al组分小于15％的AlGaN、以及AlGaInN中的任意一种。
可选的，所述深能级掺杂元素选自于Fe、Mn、Co、Ni、Cu、以及C中的一种或其组合。
可选的，所述深能级掺杂元素的掺杂浓度为1×1019cm-3～7×1019cm-3。
可选的，所述多个掺杂层和多个非掺杂层交替设置的周期为3～1000周期。
可选的，所述支撑衬底和高阻层之间进一步包括缓冲层。
本发明进一步提供了一种用于高电子迁移率晶体管的高阻衬底的生长方法，所述衬底包括支撑衬底和支撑衬底表面的高阻层，所述高阻层材料为氮化物，其特征在于，所述高阻层的生长工艺包括如下步骤的交替实施；
采用金属氧化物化学气相沉积的方法生长氮化物材料作为非掺杂层；
采用与上一步骤相同的工艺参数，并通入含有深能级掺杂元素的物质，生长掺杂层。
可选的，所述深能级掺杂元素选自于Fe、Mn、Co、Ni、Cu、以及C中的一种或其组合，对应的含有深能级掺杂元素的物质分别是二茂铁、二茂锰、二茂钴、二茂镍、二茂铜和甲烷。
可选的，所述含有深能级掺杂元素的物质的通入时间为2秒至200秒。。
本发明的优点在于，采用周期性掺杂的方法，降低单一的掺杂层的厚度，降低晶格畸变的程度。虽然每一个掺杂层的厚度降低了，但高阻层的电阻是由多个掺杂层的总厚度决定的，只要累计足够多的周期仍然可以满足高阻的要求。因此本发明在保证深能级掺杂浓度导致高阻特性同时，也能很好地保证外延层优良的晶体质量。
附图说明
附图1所示是本具体实施方式所述用于高电子迁移率晶体管高阻衬底的结构示意图。
附图2是本具体实施方式所述生长方法的步骤示意图。
附图3是附图2所述工艺的流量时序图。
具体实施方式
下面结合附图对本发明提供的用于高电子迁移率晶体管的高阻衬底以及生长方法的具体实施方式做详细说明。
参考附图1所示是本具体实施方式所述用于高电子迁移率晶体管高阻衬底的结构示意图，包括支撑衬底10、支撑衬底10表面的高阻层20。所述高阻层20材料为氮化物。所述高阻层20中包含由多个掺杂层21和多个非掺杂层22交替设置的周期性结构。所述高阻层20所包含的多个掺杂层21和多个非掺杂层22均为氮化物材料，且所述掺杂层21的材料为含有深能级掺杂元素的氮化物。深能级掺杂元素能够提高氮化物的电阻值，但却会引起晶格变形，导致继续生长沟道层(未图示)等材料的缺陷增加。因此本具体实施方式采用周期性掺杂的方法，降低单一的掺杂层21的厚度，降低晶格畸变的程度。虽然每一个掺杂层21的厚度降低了，但高阻层20的电阻是由多个掺杂层21的总厚度决定的，只要累计足够多的周期仍然可以满足高阻的要求。因此本具体实施方式的方案在提高深能级掺杂浓度导致高阻特性同时，也能很好地保证外延层优良的晶体质量。
其中所述的支撑衬底10为蓝宝石或碳化硅或硅或氧化锌或铝酸锂或氮化铝或氮化镓。本具体实施方式中的支撑衬底10采用8英寸硅(111)衬底。
在本具体实施方式中，所述高阻层20中的掺杂层21和非掺杂层22的材料各自独立地选自于GaN、Al组分小于15％的AlGaN、以及AlGaInN中的任意一种。而所述掺杂层21中深能级掺杂元素选自于Fe、Mn、Co、Ni、Cu、以及C中的一种或其组合。
本具体实施方式中，所述深能级掺杂元素的掺杂浓度为1×1019cm-3～7×1019cm-3，所述多个掺杂层21和多个非掺杂层22交替设置的周期为3～1000周期。每一层掺杂层21的厚度范围是10纳米-5微米，总厚度范围是50纳米-15微米。
本具体实施方式中，为了进一步提高晶体质量，所述支撑衬底10和高阻层20之间进一步包括缓冲层30。
参考附图2是本具体实施方式所述生长方法的步骤示意图。对于上述高阻层20的生长工艺，应当包括如下步骤的交替实施；步骤S1，采用金属氧化物化学气相沉积的方法生长氮化物材料作为非掺杂层；步骤S2，采用与上一步骤相同的工艺参数，并通入含有深能级掺杂元素的物质，生长掺杂层。
步骤S1中所述的金属氧化物化学气相沉积的方法，在具体实施中例如可以采用德国爱思强(Aixtron)公司的行星式反应腔G5-plus MOCVD生长设备。氮气和氢气作为载气，三族元素为MO源为三甲基镓(TMGa)和三甲基铝(TMAl)。外延片的生长温度为1030-1150℃，生长压力为60-200mbar，氨气的流量为8-60L/min，TMGa的流量为250μmol/min，TMGa为50μmol/min。
步骤S2中的掺杂元素可以是选自于Fe、Mn、Co、Ni、Cu、以及C中的一种或其组合。对于不同的元素可以设置不同的工艺参数和通入时间，通入时间例如可以是2秒至200秒。例如对于Fe深能级杂质可以采用的工艺是采用Cp2Fe作为原物质，通入时间为30s，通入周期为100，Fe的流量为200sccm(浓度为3x1019cm-3)。生长压力为200mar，生长温度为1030℃。附图3是上述工艺的流量时序图。这样制作出来的高阻层室温电阻率大于107Ω.cm。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。
Claims (8)
1.一种用于高电子迁移率晶体管的高阻衬底，包括支撑衬底和支撑衬底表面的高阻层，所述高阻层材料为氮化物，其特征在于，所述高阻层中包含由多个掺杂层和多个非掺杂层交替设置的周期性结构，所述掺杂层的材料为含有深能级掺杂元素的氮化物；所述高阻层中的掺杂层和非掺杂层的材料各自独立地选自于GaN、Al组分小于15％的AlGaN、以及AlGaInN中的任意一种。
2.根据权利要求1所述的用于高电子迁移率晶体管的高阻衬底，其特征在于，所述深能级掺杂元素选自于Fe、Mn、Co、Ni、Cu、以及C中的一种或其组合。
3.根据权利要求1所述的用于高电子迁移率晶体管的高阻衬底，其特征在于，所述深能级掺杂元素的掺杂浓度为1×1019cm-3～7×1019cm-3。
4.根据权利要求1所述的用于高电子迁移率晶体管的高阻衬底，其特征在于，所述多个掺杂层和多个非掺杂层交替设置的周期为3～1000周期。
5.根据权利要求1所述的用于高电子迁移率晶体管的高阻衬底，其特征在于，所述支撑衬底和高阻层之间进一步包括缓冲层。
6.一种用于高电子迁移率晶体管的高阻衬底的生长方法，所述衬底包括支撑衬底和支撑衬底表面的高阻层，所述高阻层材料为氮化物，其特征在于，所述高阻层的生长工艺包括如下步骤的交替实施；
采用金属氧化物化学气相沉积的方法生长氮化物材料作为非掺杂层；采用与上一步骤相同的工艺参数，并通入含有深能级掺杂元素的物质，生长掺杂层；所述高阻层中的掺杂层和非掺杂层的材料各自独立地选自于GaN、Al组分小于15％的AlGaN、以及AlGaInN中的任意一种。
7.根据权利要求6所述的方法，其特征在于，所述深能级掺杂元素选自于Fe、Mn、Co、Ni、Cu以及C中的一种或其组合，对应的含有深能级掺杂元素的物质分别是二茂铁、二茂锰、二茂钴、二茂镍、二茂铜和甲烷。
8.根据权利要求6所述的方法，其特征在于，所述含有深能级掺杂元素的物质的通入时间为2秒至200秒。
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