TWI747944B - 用於iii族氮化物結構之生長的成核層 - Google Patents

用於iii族氮化物結構之生長的成核層 Download PDF

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TWI747944B
TWI747944B TW106130018A TW106130018A TWI747944B TW I747944 B TWI747944 B TW I747944B TW 106130018 A TW106130018 A TW 106130018A TW 106130018 A TW106130018 A TW 106130018A TW I747944 B TWI747944 B TW I747944B
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layer
substrate
deep
nucleation layer
concentration
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TW106130018A
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TW201822253A (zh
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歐雷格 拉柏汀
高振凱
羅健峰
韋恩 強森
霍格斯 瑪強德
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英商Ｉｑｅ有限公司
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    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
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    • H01L21/02494—Structure
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    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
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    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
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    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
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    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/854—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Chemical Vapour Deposition (AREA)
TW106130018A 2016-09-02 2017-09-01 用於iii族氮化物結構之生長的成核層 TWI747944B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/256,170 US9917156B1 (en) 2016-09-02 2016-09-02 Nucleation layer for growth of III-nitride structures
US15/256,170 2016-09-02

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Publication Number Publication Date
TW201822253A TW201822253A (zh) 2018-06-16
TWI747944B true TWI747944B (zh) 2021-12-01

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US (2) US9917156B1 (enExample)
EP (1) EP3507822A1 (enExample)
JP (2) JP7137557B2 (enExample)
CN (1) CN109964305B (enExample)
TW (1) TWI747944B (enExample)
WO (1) WO2018045251A1 (enExample)

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JP6950185B2 (ja) * 2017-01-12 2021-10-13 三菱電機株式会社 高電子移動度トランジスタの製造方法、高電子移動度トランジスタ
FR3071854A1 (fr) * 2017-10-03 2019-04-05 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de fabrication d'un composant electronique a heterojonction muni d'une couche barriere enterree
DE102018108604A1 (de) 2018-04-11 2019-10-17 Aixtron Se Nukleationsschicht-Abscheideverfahren
US12068407B2 (en) * 2018-10-31 2024-08-20 Sony Semiconductor Solutions Corporation Semiconductor device, communication module, and semiconductor device manufacturing method
DE102019111598A1 (de) * 2019-05-06 2020-11-12 Aixtron Se Verfahren zum Abscheiden eines Halbleiter-Schichtsystems, welches Gallium und Indium enthält
CN112750904B (zh) * 2019-10-30 2024-01-02 联华电子股份有限公司 具有应力松弛层的半导体元件
JP7577842B2 (ja) * 2020-09-30 2024-11-05 蘇州能訊高能半導体有限公司 半導体デバイスのエピタキシャル構造、その製造方法及び半導体デバイス
CN118140313A (zh) * 2021-10-28 2024-06-04 华为技术有限公司 集成电路、其制备方法、功率放大器及电子设备
US12435415B2 (en) * 2021-11-30 2025-10-07 Illinois Institute Of Technology Thermal atomic layer deposition of ternary gallium oxide thin films
TWI779980B (zh) 2022-01-03 2022-10-01 環球晶圓股份有限公司 半導體結構

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