JP2006237539A5 - - Google Patents
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- Publication number
- JP2006237539A5 JP2006237539A5 JP2005054121A JP2005054121A JP2006237539A5 JP 2006237539 A5 JP2006237539 A5 JP 2006237539A5 JP 2005054121 A JP2005054121 A JP 2005054121A JP 2005054121 A JP2005054121 A JP 2005054121A JP 2006237539 A5 JP2006237539 A5 JP 2006237539A5
- Authority
- JP
- Japan
- Prior art keywords
- nitrogen
- group iii
- iii nitride
- compound semiconductor
- nitride compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 20
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- -1 nitride compound Chemical class 0.000 claims description 8
- 239000012535 impurity Substances 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 claims 2
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 239000012159 carrier gas Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005054121A JP2006237539A (ja) | 2005-02-28 | 2005-02-28 | Ｉｉｉ族窒化物系化合物半導体素子の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005054121A JP2006237539A (ja) | 2005-02-28 | 2005-02-28 | Ｉｉｉ族窒化物系化合物半導体素子の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006237539A JP2006237539A (ja) | 2006-09-07 |
| JP2006237539A5 true JP2006237539A5 (enExample) | 2007-10-25 |
Family
ID=37044813
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005054121A Withdrawn JP2006237539A (ja) | 2005-02-28 | 2005-02-28 | Ｉｉｉ族窒化物系化合物半導体素子の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2006237539A (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015043413A (ja) | 2013-07-22 | 2015-03-05 | パナソニックＩｐマネジメント株式会社 | 窒化物半導体発光素子 |
| JP2016157734A (ja) * | 2015-02-23 | 2016-09-01 | 豊田合成株式会社 | Ｉｉｉ族窒化物半導体発光素子の製造方法 |
| CN105304778B (zh) * | 2015-11-20 | 2018-03-30 | 聚灿光电科技股份有限公司 | 提高GaN基LED抗静电性能的外延结构及其制备方法 |
| US10937928B2 (en) | 2017-11-09 | 2021-03-02 | Asahi Kasei Kabushiki Kaisha | Nitride semiconductor element, nitride semiconductor light emitting element, ultraviolet light emitting element |
| JP7049823B2 (ja) * | 2017-12-18 | 2022-04-07 | 旭化成株式会社 | 窒化物半導体発光素子 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2918517B2 (ja) * | 1996-06-28 | 1999-07-12 | 株式会社東芝 | ＧａＮ系化合物半導体素子の製造方法 |
| JP4032636B2 (ja) * | 1999-12-13 | 2008-01-16 | 日亜化学工業株式会社 | 発光素子 |
-
2005
- 2005-02-28 JP JP2005054121A patent/JP2006237539A/ja not_active Withdrawn
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