JP2006237539A - Ｉｉｉ族窒化物系化合物半導体素子の製造方法 - Google Patents
Ｉｉｉ族窒化物系化合物半導体素子の製造方法 Download PDFInfo
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- JP2006237539A JP2006237539A JP2005054121A JP2005054121A JP2006237539A JP 2006237539 A JP2006237539 A JP 2006237539A JP 2005054121 A JP2005054121 A JP 2005054121A JP 2005054121 A JP2005054121 A JP 2005054121A JP 2006237539 A JP2006237539 A JP 2006237539A
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- layer
- doped
- group iii
- iii nitride
- nitride compound
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- -1 nitride compound Chemical class 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000000034 method Methods 0.000 title claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 94
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 47
- 239000001257 hydrogen Substances 0.000 claims abstract description 24
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 24
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 21
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000012535 impurity Substances 0.000 claims abstract description 17
- 239000007789 gas Substances 0.000 claims abstract description 15
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 238000000927 vapour-phase epitaxy Methods 0.000 claims description 5
- 229910052594 sapphire Inorganic materials 0.000 abstract description 7
- 239000010980 sapphire Substances 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 abstract description 7
- 230000004888 barrier function Effects 0.000 abstract description 5
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 95
- 239000012159 carrier gas Substances 0.000 description 31
- 239000011777 magnesium Substances 0.000 description 17
- 239000010408 film Substances 0.000 description 14
- 238000009826 distribution Methods 0.000 description 7
- 239000010409 thin film Substances 0.000 description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- 238000001947 vapour-phase growth Methods 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- 238000005424 photoluminescence Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003446 memory effect Effects 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005054121A JP2006237539A (ja) | 2005-02-28 | 2005-02-28 | Ｉｉｉ族窒化物系化合物半導体素子の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005054121A JP2006237539A (ja) | 2005-02-28 | 2005-02-28 | Ｉｉｉ族窒化物系化合物半導体素子の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006237539A true JP2006237539A (ja) | 2006-09-07 |
| JP2006237539A5 JP2006237539A5 (enExample) | 2007-10-25 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005054121A Withdrawn JP2006237539A (ja) | 2005-02-28 | 2005-02-28 | Ｉｉｉ族窒化物系化合物半導体素子の製造方法 |
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| Country | Link |
|---|---|
| JP (1) | JP2006237539A (enExample) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9209361B2 (en) | 2013-07-22 | 2015-12-08 | Panasonic Intellectual Property Management Co., Ltd. | Nitride semiconductor light-emitting element |
| CN105304778A (zh) * | 2015-11-20 | 2016-02-03 | 聚灿光电科技股份有限公司 | 提高GaN基LED抗静电性能的外延结构及其制备方法 |
| JP2016157734A (ja) * | 2015-02-23 | 2016-09-01 | 豊田合成株式会社 | Ｉｉｉ族窒化物半導体発光素子の製造方法 |
| JP2019110195A (ja) * | 2017-12-18 | 2019-07-04 | 旭化成株式会社 | 窒化物半導体発光素子 |
| US11637221B2 (en) | 2017-11-09 | 2023-04-25 | Asahi Kasei Kabushiki Kaisha | Nitride semiconductor element, nitride semiconductor light emitting element, ultraviolet light emitting element |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1075019A (ja) * | 1996-06-28 | 1998-03-17 | Toshiba Corp | ＧａＮ系化合物半導体素子の製造方法 |
| JP2001237457A (ja) * | 1999-12-13 | 2001-08-31 | Nichia Chem Ind Ltd | 発光素子 |
-
2005
- 2005-02-28 JP JP2005054121A patent/JP2006237539A/ja not_active Withdrawn
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1075019A (ja) * | 1996-06-28 | 1998-03-17 | Toshiba Corp | ＧａＮ系化合物半導体素子の製造方法 |
| JP2001237457A (ja) * | 1999-12-13 | 2001-08-31 | Nichia Chem Ind Ltd | 発光素子 |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9209361B2 (en) | 2013-07-22 | 2015-12-08 | Panasonic Intellectual Property Management Co., Ltd. | Nitride semiconductor light-emitting element |
| JP2016157734A (ja) * | 2015-02-23 | 2016-09-01 | 豊田合成株式会社 | Ｉｉｉ族窒化物半導体発光素子の製造方法 |
| CN105304778A (zh) * | 2015-11-20 | 2016-02-03 | 聚灿光电科技股份有限公司 | 提高GaN基LED抗静电性能的外延结构及其制备方法 |
| CN105304778B (zh) * | 2015-11-20 | 2018-03-30 | 聚灿光电科技股份有限公司 | 提高GaN基LED抗静电性能的外延结构及其制备方法 |
| US11637221B2 (en) | 2017-11-09 | 2023-04-25 | Asahi Kasei Kabushiki Kaisha | Nitride semiconductor element, nitride semiconductor light emitting element, ultraviolet light emitting element |
| JP2019110195A (ja) * | 2017-12-18 | 2019-07-04 | 旭化成株式会社 | 窒化物半導体発光素子 |
| JP7049823B2 (ja) | 2017-12-18 | 2022-04-07 | 旭化成株式会社 | 窒化物半導体発光素子 |
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