JP2017516289A5 - - Google Patents

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Publication number
JP2017516289A5
JP2017516289A5 JP2016551164A JP2016551164A JP2017516289A5 JP 2017516289 A5 JP2017516289 A5 JP 2017516289A5 JP 2016551164 A JP2016551164 A JP 2016551164A JP 2016551164 A JP2016551164 A JP 2016551164A JP 2017516289 A5 JP2017516289 A5 JP 2017516289A5
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JP
Japan
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layer
contact layer
semiconductor device
multilayer
layers
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JP2016551164A
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English (en)
Japanese (ja)
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JP2017516289A (ja
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Priority claimed from PCT/US2015/015112 external-priority patent/WO2015120424A1/en
Publication of JP2017516289A publication Critical patent/JP2017516289A/ja
Publication of JP2017516289A5 publication Critical patent/JP2017516289A5/ja
Pending legal-status Critical Current

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JP2016551164A 2014-02-10 2015-02-10 半導体の選択的な電気化学エッチング Pending JP2017516289A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201461937736P 2014-02-10 2014-02-10
US61/937,736 2014-02-10
PCT/US2015/015112 WO2015120424A1 (en) 2014-02-10 2015-02-10 Selective, electrochemical etching of a semiconductor

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2020019389A Division JP2020107890A (ja) 2014-02-10 2020-02-07 半導体の選択的な電気化学エッチング

Publications (2)

Publication Number Publication Date
JP2017516289A JP2017516289A (ja) 2017-06-15
JP2017516289A5 true JP2017516289A5 (enExample) 2018-03-15

Family

ID=53778530

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2016551164A Pending JP2017516289A (ja) 2014-02-10 2015-02-10 半導体の選択的な電気化学エッチング
JP2020019389A Pending JP2020107890A (ja) 2014-02-10 2020-02-07 半導体の選択的な電気化学エッチング

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2020019389A Pending JP2020107890A (ja) 2014-02-10 2020-02-07 半導体の選択的な電気化学エッチング

Country Status (6)

Country Link
US (1) US9922838B2 (enExample)
EP (1) EP3105777A4 (enExample)
JP (2) JP2017516289A (enExample)
KR (1) KR20160119808A (enExample)
CN (1) CN105981131B (enExample)
WO (1) WO2015120424A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10379083B2 (en) * 2016-01-04 2019-08-13 Farshid Raissi Electronic device for detection of viruses, bacteria, and pathogens
KR20250069971A (ko) 2017-09-27 2025-05-20 캠브리지 엔터프라이즈 리미티드 재료를 다공화하기 위한 방법 및 반도체 구조체
JP2020537360A (ja) * 2017-10-16 2020-12-17 クリスタル アイエス, インコーポレーテッドCrystal Is, Inc. 電子及び光電子デバイスのための窒化アルミニウム基板の電気化学的除去
GB201801337D0 (en) 2018-01-26 2018-03-14 Cambridge Entpr Ltd Method for etching a semiconductor structure
CN108519411A (zh) * 2018-03-30 2018-09-11 厦门大学 一种氮化物半导体材料除氢激活提升p型导电性的方法
JP7065717B2 (ja) * 2018-07-13 2022-05-12 株式会社Ｓｃｒｅｅｎホールディングス 基板エッチング方法
DE102018129594B4 (de) * 2018-11-23 2025-09-04 Infineon Technologies Ag Teilweises entfernen eines halbleiterwafers
WO2021015816A1 (en) * 2019-07-19 2021-01-28 Iqe Plc Semiconductor material having tunable permittivity and tunable thermal conductivity
JP7226200B2 (ja) * 2019-09-06 2023-02-21 株式会社デンソー エッチング液およびエッチング方法
CN113178383A (zh) * 2021-03-10 2021-07-27 华为技术有限公司 一种碳化硅基板、碳化硅器件及其基板减薄方法
GB2612040B (en) 2021-10-19 2025-02-12 Iqe Plc Porous distributed Bragg reflector apparatuses, systems, and methods
KR20250028270A (ko) * 2022-06-30 2025-02-28 도오꾜오까고오교 가부시끼가이샤 탄화규소 단결정 기판의 처리 방법, 탄화규소 단결정 기판 처리 시스템, 및 보충액
BE1032820B1 (fr) * 2024-07-31 2026-03-05 Incize Dispositif à circuit intégré comportant une couche d'arrêt de gravure et son traitement
BE1032824B1 (fr) * 2024-07-31 2026-03-02 Incize Dispositif à circuit intégré comportant une couche d'arrêt de gravure et son traitement

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3088033B2 (ja) * 1991-08-02 2000-09-18 キヤノン株式会社 半導体装置
JP3098811B2 (ja) * 1991-07-29 2000-10-16 キヤノン株式会社 絶縁ゲート型電界効果トランジスタ及びそれを用いた半導体装置
US5454915A (en) * 1992-10-06 1995-10-03 Kulite Semiconductor Products, Inc. Method of fabricating porous silicon carbide (SiC)
WO1995032524A1 (en) 1994-05-24 1995-11-30 Abb Research Ltd. Semiconductor device in silicon carbide with passivated surface
JPH1167616A (ja) * 1997-08-11 1999-03-09 Sony Corp 半導体基板および半導体薄膜ならびにそれらの製造方法
DE10054484A1 (de) 2000-11-03 2002-05-08 Bosch Gmbh Robert Mikromechanisches Bauelement und entsprechendes Herstellungsverfahren
US6884740B2 (en) * 2001-09-04 2005-04-26 The Regents Of The University Of California Photoelectrochemical undercut etching of semiconductor material
JP4554180B2 (ja) * 2003-09-17 2010-09-29 ソニー株式会社 薄膜半導体デバイスの製造方法
JP4976647B2 (ja) * 2004-07-29 2012-07-18 富士電機株式会社 炭化珪素半導体基板の製造方法
TWI369009B (en) * 2007-09-21 2012-07-21 Nat Univ Chung Hsing Light-emitting chip device with high thermal conductivity
EP2272091B1 (en) * 2008-03-21 2012-11-28 Rise Technology S.r.l. Method for making microstructures by converting porous silicon into porous metal or ceramics
JP5497409B2 (ja) * 2009-11-09 2014-05-21 株式会社デンソー 半導体装置の製造方法
KR20130007557A (ko) * 2010-01-27 2013-01-18 예일 유니버시티 ＧａＮ 소자의 전도도 기반 선택적 에칭 및 그의 응용
CN103081107B (zh) * 2010-03-09 2017-02-08 得克萨斯州大学系统董事会 多孔和非多孔纳米结构
WO2012051618A2 (en) 2010-10-15 2012-04-19 The Regents Of The University Of California Method for producing gallium nitride substrates for electronic and optoelectronic devices
JP5774900B2 (ja) * 2011-04-28 2015-09-09 学校法人 名城大学 発光ダイオード素子及びその製造方法
US9583353B2 (en) * 2012-06-28 2017-02-28 Yale University Lateral electrochemical etching of III-nitride materials for microfabrication

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