JP2017516289A5 - - Google Patents
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- JP2017516289A5 JP2017516289A5 JP2016551164A JP2016551164A JP2017516289A5 JP 2017516289 A5 JP2017516289 A5 JP 2017516289A5 JP 2016551164 A JP2016551164 A JP 2016551164A JP 2016551164 A JP2016551164 A JP 2016551164A JP 2017516289 A5 JP2017516289 A5 JP 2017516289A5
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- JP
- Japan
- Prior art keywords
- layer
- contact layer
- semiconductor device
- multilayer
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 claims 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 2
- 239000000956 alloy Substances 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 239000000463 material Substances 0.000 description 3
- 238000000038 ultrahigh vacuum chemical vapour deposition Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201461937736P | 2014-02-10 | 2014-02-10 | |
| US61/937,736 | 2014-02-10 | ||
| PCT/US2015/015112 WO2015120424A1 (en) | 2014-02-10 | 2015-02-10 | Selective, electrochemical etching of a semiconductor |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020019389A Division JP2020107890A (ja) | 2014-02-10 | 2020-02-07 | 半導体の選択的な電気化学エッチング |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2017516289A JP2017516289A (ja) | 2017-06-15 |
| JP2017516289A5 true JP2017516289A5 (enExample) | 2018-03-15 |
Family
ID=53778530
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016551164A Pending JP2017516289A (ja) | 2014-02-10 | 2015-02-10 | 半導体の選択的な電気化学エッチング |
| JP2020019389A Pending JP2020107890A (ja) | 2014-02-10 | 2020-02-07 | 半導体の選択的な電気化学エッチング |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020019389A Pending JP2020107890A (ja) | 2014-02-10 | 2020-02-07 | 半導体の選択的な電気化学エッチング |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9922838B2 (enExample) |
| EP (1) | EP3105777A4 (enExample) |
| JP (2) | JP2017516289A (enExample) |
| KR (1) | KR20160119808A (enExample) |
| CN (1) | CN105981131B (enExample) |
| WO (1) | WO2015120424A1 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10379083B2 (en) * | 2016-01-04 | 2019-08-13 | Farshid Raissi | Electronic device for detection of viruses, bacteria, and pathogens |
| JP7062757B2 (ja) | 2017-09-27 | 2022-05-06 | ケンブリッジ エンタープライズ リミテッド | 材料および半導体構造を多孔質化する方法 |
| US10777706B2 (en) * | 2017-10-16 | 2020-09-15 | Crystal Is, Inc. | Electrochemical removal of aluminum nitride substrates for electronic and optoelectronic devices |
| GB201801337D0 (en) | 2018-01-26 | 2018-03-14 | Cambridge Entpr Ltd | Method for etching a semiconductor structure |
| CN112098481B (zh) * | 2018-03-30 | 2021-08-27 | 厦门大学 | 一种用于氮化物半导体材料除氢激活的装置 |
| JP7065717B2 (ja) * | 2018-07-13 | 2022-05-12 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板エッチング方法 |
| DE102018129594B4 (de) * | 2018-11-23 | 2025-09-04 | Infineon Technologies Ag | Teilweises entfernen eines halbleiterwafers |
| WO2021015816A1 (en) * | 2019-07-19 | 2021-01-28 | Iqe Plc | Semiconductor material having tunable permittivity and tunable thermal conductivity |
| JP7226200B2 (ja) * | 2019-09-06 | 2023-02-21 | 株式会社デンソー | エッチング液およびエッチング方法 |
| CN113178383A (zh) * | 2021-03-10 | 2021-07-27 | 华为技术有限公司 | 一种碳化硅基板、碳化硅器件及其基板减薄方法 |
| JPWO2024004872A1 (enExample) * | 2022-06-30 | 2024-01-04 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3088033B2 (ja) * | 1991-08-02 | 2000-09-18 | キヤノン株式会社 | 半導体装置 |
| JP3098811B2 (ja) * | 1991-07-29 | 2000-10-16 | キヤノン株式会社 | 絶縁ゲート型電界効果トランジスタ及びそれを用いた半導体装置 |
| US5454915A (en) * | 1992-10-06 | 1995-10-03 | Kulite Semiconductor Products, Inc. | Method of fabricating porous silicon carbide (SiC) |
| WO1995032524A1 (en) * | 1994-05-24 | 1995-11-30 | Abb Research Ltd. | Semiconductor device in silicon carbide with passivated surface |
| JPH1167616A (ja) * | 1997-08-11 | 1999-03-09 | Sony Corp | 半導体基板および半導体薄膜ならびにそれらの製造方法 |
| DE10054484A1 (de) * | 2000-11-03 | 2002-05-08 | Bosch Gmbh Robert | Mikromechanisches Bauelement und entsprechendes Herstellungsverfahren |
| US6884740B2 (en) * | 2001-09-04 | 2005-04-26 | The Regents Of The University Of California | Photoelectrochemical undercut etching of semiconductor material |
| JP4554180B2 (ja) * | 2003-09-17 | 2010-09-29 | ソニー株式会社 | 薄膜半導体デバイスの製造方法 |
| JP4976647B2 (ja) * | 2004-07-29 | 2012-07-18 | 富士電機株式会社 | 炭化珪素半導体基板の製造方法 |
| TWI369009B (en) * | 2007-09-21 | 2012-07-21 | Nat Univ Chung Hsing | Light-emitting chip device with high thermal conductivity |
| WO2009115551A1 (en) * | 2008-03-21 | 2009-09-24 | Rise Technology S.R.L. | Method for making microstructures by converting porous silicon into porous metal or ceramics |
| JP5497409B2 (ja) * | 2009-11-09 | 2014-05-21 | 株式会社デンソー | 半導体装置の製造方法 |
| EP2529394A4 (en) * | 2010-01-27 | 2017-11-15 | Yale University | Conductivity based selective etch for gan devices and applications thereof |
| WO2011156028A2 (en) * | 2010-03-09 | 2011-12-15 | Board Of Regents Of The University Of Texas System | Porous and non-porous nanostructures |
| US20130207237A1 (en) | 2010-10-15 | 2013-08-15 | The Regents Of The University Of California | Method for producing gallium nitride substrates for electronic and optoelectronic devices |
| JP5774900B2 (ja) * | 2011-04-28 | 2015-09-09 | 学校法人 名城大学 | 発光ダイオード素子及びその製造方法 |
| US9583353B2 (en) * | 2012-06-28 | 2017-02-28 | Yale University | Lateral electrochemical etching of III-nitride materials for microfabrication |
-
2015
- 2015-02-10 JP JP2016551164A patent/JP2017516289A/ja active Pending
- 2015-02-10 KR KR1020167024310A patent/KR20160119808A/ko not_active Ceased
- 2015-02-10 EP EP15745915.7A patent/EP3105777A4/en not_active Withdrawn
- 2015-02-10 CN CN201580007817.4A patent/CN105981131B/zh not_active Expired - Fee Related
- 2015-02-10 US US15/116,041 patent/US9922838B2/en active Active
- 2015-02-10 WO PCT/US2015/015112 patent/WO2015120424A1/en not_active Ceased
-
2020
- 2020-02-07 JP JP2020019389A patent/JP2020107890A/ja active Pending
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