CN105981131B - 半导体的选择性电化学蚀刻 - Google Patents

半导体的选择性电化学蚀刻 Download PDF

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Publication number
CN105981131B
CN105981131B CN201580007817.4A CN201580007817A CN105981131B CN 105981131 B CN105981131 B CN 105981131B CN 201580007817 A CN201580007817 A CN 201580007817A CN 105981131 B CN105981131 B CN 105981131B
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semiconductor layer
semiconductor
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substrate
porosity
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English (en)
Chinese (zh)
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CN105981131A (zh
Inventor
拉金德拉·P·达哈尔
伊什瓦拉·B·巴特
周达成
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Rensselaer Polytechnic Institute
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Rensselaer Polytechnic Institute
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/61—Electrolytic etching
    • H10P50/617—Electrolytic etching of Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/043—Manufacture or treatment of planar diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/61—Electrolytic etching
    • H10P50/613—Electrolytic etching of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/40—Treatments of semiconductor bodies to modify their internal properties, e.g. to produce internal imperfections
    • H10P95/408—Treatments of semiconductor bodies to modify their internal properties, e.g. to produce internal imperfections of Group III-V semiconductors, e.g. to render them semi-insulating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/70—Chemical treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
CN201580007817.4A 2014-02-10 2015-02-10 半导体的选择性电化学蚀刻 Expired - Fee Related CN105981131B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201461937736P 2014-02-10 2014-02-10
US61/937,736 2014-02-10
PCT/US2015/015112 WO2015120424A1 (en) 2014-02-10 2015-02-10 Selective, electrochemical etching of a semiconductor

Publications (2)

Publication Number Publication Date
CN105981131A CN105981131A (zh) 2016-09-28
CN105981131B true CN105981131B (zh) 2019-12-03

Family

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CN201580007817.4A Expired - Fee Related CN105981131B (zh) 2014-02-10 2015-02-10 半导体的选择性电化学蚀刻

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Country Link
US (1) US9922838B2 (enExample)
EP (1) EP3105777A4 (enExample)
JP (2) JP2017516289A (enExample)
KR (1) KR20160119808A (enExample)
CN (1) CN105981131B (enExample)
WO (1) WO2015120424A1 (enExample)

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US10379083B2 (en) * 2016-01-04 2019-08-13 Farshid Raissi Electronic device for detection of viruses, bacteria, and pathogens
KR20250069971A (ko) 2017-09-27 2025-05-20 캠브리지 엔터프라이즈 리미티드 재료를 다공화하기 위한 방법 및 반도체 구조체
JP2020537360A (ja) * 2017-10-16 2020-12-17 クリスタル アイエス, インコーポレーテッドCrystal Is, Inc. 電子及び光電子デバイスのための窒化アルミニウム基板の電気化学的除去
GB201801337D0 (en) 2018-01-26 2018-03-14 Cambridge Entpr Ltd Method for etching a semiconductor structure
CN108519411A (zh) * 2018-03-30 2018-09-11 厦门大学 一种氮化物半导体材料除氢激活提升p型导电性的方法
JP7065717B2 (ja) * 2018-07-13 2022-05-12 株式会社Ｓｃｒｅｅｎホールディングス 基板エッチング方法
DE102018129594B4 (de) * 2018-11-23 2025-09-04 Infineon Technologies Ag Teilweises entfernen eines halbleiterwafers
WO2021015816A1 (en) * 2019-07-19 2021-01-28 Iqe Plc Semiconductor material having tunable permittivity and tunable thermal conductivity
JP7226200B2 (ja) * 2019-09-06 2023-02-21 株式会社デンソー エッチング液およびエッチング方法
CN113178383A (zh) * 2021-03-10 2021-07-27 华为技术有限公司 一种碳化硅基板、碳化硅器件及其基板减薄方法
GB2612040B (en) 2021-10-19 2025-02-12 Iqe Plc Porous distributed Bragg reflector apparatuses, systems, and methods
KR20250028270A (ko) * 2022-06-30 2025-02-28 도오꾜오까고오교 가부시끼가이샤 탄화규소 단결정 기판의 처리 방법, 탄화규소 단결정 기판 처리 시스템, 및 보충액
BE1032820B1 (fr) * 2024-07-31 2026-03-05 Incize Dispositif à circuit intégré comportant une couche d'arrêt de gravure et son traitement
BE1032824B1 (fr) * 2024-07-31 2026-03-02 Incize Dispositif à circuit intégré comportant une couche d'arrêt de gravure et son traitement

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5454915A (en) * 1992-10-06 1995-10-03 Kulite Semiconductor Products, Inc. Method of fabricating porous silicon carbide (SiC)
WO2009115551A1 (en) * 2008-03-21 2009-09-24 Rise Technology S.R.L. Method for making microstructures by converting porous silicon into porous metal or ceramics
CN102782818A (zh) * 2010-01-27 2012-11-14 耶鲁大学 用于GaN装置的基于导电性的选择性蚀刻和其应用
CN103081107A (zh) * 2010-03-09 2013-05-01 得克萨斯州大学系统董事会 多孔和非多孔纳米结构

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JP3088033B2 (ja) * 1991-08-02 2000-09-18 キヤノン株式会社 半導体装置
JP3098811B2 (ja) * 1991-07-29 2000-10-16 キヤノン株式会社 絶縁ゲート型電界効果トランジスタ及びそれを用いた半導体装置
WO1995032524A1 (en) 1994-05-24 1995-11-30 Abb Research Ltd. Semiconductor device in silicon carbide with passivated surface
JPH1167616A (ja) * 1997-08-11 1999-03-09 Sony Corp 半導体基板および半導体薄膜ならびにそれらの製造方法
DE10054484A1 (de) 2000-11-03 2002-05-08 Bosch Gmbh Robert Mikromechanisches Bauelement und entsprechendes Herstellungsverfahren
US6884740B2 (en) * 2001-09-04 2005-04-26 The Regents Of The University Of California Photoelectrochemical undercut etching of semiconductor material
JP4554180B2 (ja) * 2003-09-17 2010-09-29 ソニー株式会社 薄膜半導体デバイスの製造方法
JP4976647B2 (ja) * 2004-07-29 2012-07-18 富士電機株式会社 炭化珪素半導体基板の製造方法
TWI369009B (en) * 2007-09-21 2012-07-21 Nat Univ Chung Hsing Light-emitting chip device with high thermal conductivity
JP5497409B2 (ja) * 2009-11-09 2014-05-21 株式会社デンソー 半導体装置の製造方法
WO2012051618A2 (en) 2010-10-15 2012-04-19 The Regents Of The University Of California Method for producing gallium nitride substrates for electronic and optoelectronic devices
JP5774900B2 (ja) * 2011-04-28 2015-09-09 学校法人 名城大学 発光ダイオード素子及びその製造方法
US9583353B2 (en) * 2012-06-28 2017-02-28 Yale University Lateral electrochemical etching of III-nitride materials for microfabrication

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5454915A (en) * 1992-10-06 1995-10-03 Kulite Semiconductor Products, Inc. Method of fabricating porous silicon carbide (SiC)
WO2009115551A1 (en) * 2008-03-21 2009-09-24 Rise Technology S.R.L. Method for making microstructures by converting porous silicon into porous metal or ceramics
CN102782818A (zh) * 2010-01-27 2012-11-14 耶鲁大学 用于GaN装置的基于导电性的选择性蚀刻和其应用
CN103081107A (zh) * 2010-03-09 2013-05-01 得克萨斯州大学系统董事会 多孔和非多孔纳米结构

Also Published As

Publication number Publication date
CN105981131A (zh) 2016-09-28
JP2017516289A (ja) 2017-06-15
US9922838B2 (en) 2018-03-20
EP3105777A4 (en) 2017-09-13
WO2015120424A1 (en) 2015-08-13
KR20160119808A (ko) 2016-10-14
US20170170025A1 (en) 2017-06-15
EP3105777A1 (en) 2016-12-21
JP2020107890A (ja) 2020-07-09

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