KR20160119808A - 반도체의 선택적 전기화학적 에칭 - Google Patents

반도체의 선택적 전기화학적 에칭 Download PDF

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Publication number
KR20160119808A
KR20160119808A KR1020167024310A KR20167024310A KR20160119808A KR 20160119808 A KR20160119808 A KR 20160119808A KR 1020167024310 A KR1020167024310 A KR 1020167024310A KR 20167024310 A KR20167024310 A KR 20167024310A KR 20160119808 A KR20160119808 A KR 20160119808A
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South Korea
Prior art keywords
semiconductor layer
layer
semiconductor
substrate
porosity
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Ceased
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KR1020167024310A
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English (en)
Korean (ko)
Inventor
라젠드라 피. 다할
이슈와라 비. 바트
태트-싱 차우
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렌슬러 폴리테크닉 인스티튜트
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Publication of KR20160119808A publication Critical patent/KR20160119808A/ko
Ceased legal-status Critical Current

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    • H10P50/617—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • H01L21/30635—Electrolytic etching of AIIIBV compounds
    • H01L29/872—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/043—Manufacture or treatment of planar diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P50/20—
    • H10P50/613—
    • H10P52/00—
    • H10P95/408—
    • H10P95/70—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Ceramic Engineering (AREA)
KR1020167024310A 2014-02-10 2015-02-10 반도체의 선택적 전기화학적 에칭 Ceased KR20160119808A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201461937736P 2014-02-10 2014-02-10
US61/937,736 2014-02-10
PCT/US2015/015112 WO2015120424A1 (en) 2014-02-10 2015-02-10 Selective, electrochemical etching of a semiconductor

Publications (1)

Publication Number Publication Date
KR20160119808A true KR20160119808A (ko) 2016-10-14

Family

ID=53778530

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020167024310A Ceased KR20160119808A (ko) 2014-02-10 2015-02-10 반도체의 선택적 전기화학적 에칭

Country Status (6)

Country Link
US (1) US9922838B2 (enExample)
EP (1) EP3105777A4 (enExample)
JP (2) JP2017516289A (enExample)
KR (1) KR20160119808A (enExample)
CN (1) CN105981131B (enExample)
WO (1) WO2015120424A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10379083B2 (en) * 2016-01-04 2019-08-13 Farshid Raissi Electronic device for detection of viruses, bacteria, and pathogens
KR102805522B1 (ko) 2017-09-27 2025-05-14 캠브리지 엔터프라이즈 리미티드 재료를 다공화하기 위한 방법 및 반도체 구조체
JP2020537360A (ja) * 2017-10-16 2020-12-17 クリスタル アイエス, インコーポレーテッドCrystal Is, Inc. 電子及び光電子デバイスのための窒化アルミニウム基板の電気化学的除去
GB201801337D0 (en) 2018-01-26 2018-03-14 Cambridge Entpr Ltd Method for etching a semiconductor structure
CN112098481B (zh) * 2018-03-30 2021-08-27 厦门大学 一种用于氮化物半导体材料除氢激活的装置
JP7065717B2 (ja) * 2018-07-13 2022-05-12 株式会社Ｓｃｒｅｅｎホールディングス 基板エッチング方法
DE102018129594B4 (de) 2018-11-23 2025-09-04 Infineon Technologies Ag Teilweises entfernen eines halbleiterwafers
CN114207782A (zh) * 2019-07-19 2022-03-18 Iqe公开有限公司 具有可调介电常数和可调热导率的半导体材料
JP7226200B2 (ja) * 2019-09-06 2023-02-21 株式会社デンソー エッチング液およびエッチング方法
CN113178383A (zh) * 2021-03-10 2021-07-27 华为技术有限公司 一种碳化硅基板、碳化硅器件及其基板减薄方法
GB2612040B (en) 2021-10-19 2025-02-12 Iqe Plc Porous distributed Bragg reflector apparatuses, systems, and methods
US20250369155A1 (en) * 2022-06-30 2025-12-04 Tokyo Ohka Kogyo Co., Ltd. Processing method for silicon carbide single crystal substrate, silicon carbide single crystal substrate processing system, and replenishing liquid

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3098811B2 (ja) * 1991-07-29 2000-10-16 キヤノン株式会社 絶縁ゲート型電界効果トランジスタ及びそれを用いた半導体装置
JP3088033B2 (ja) * 1991-08-02 2000-09-18 キヤノン株式会社 半導体装置
US5454915A (en) * 1992-10-06 1995-10-03 Kulite Semiconductor Products, Inc. Method of fabricating porous silicon carbide (SiC)
WO1995032524A1 (en) 1994-05-24 1995-11-30 Abb Research Ltd. Semiconductor device in silicon carbide with passivated surface
JPH1167616A (ja) * 1997-08-11 1999-03-09 Sony Corp 半導体基板および半導体薄膜ならびにそれらの製造方法
DE10054484A1 (de) * 2000-11-03 2002-05-08 Bosch Gmbh Robert Mikromechanisches Bauelement und entsprechendes Herstellungsverfahren
US6884740B2 (en) 2001-09-04 2005-04-26 The Regents Of The University Of California Photoelectrochemical undercut etching of semiconductor material
JP4554180B2 (ja) 2003-09-17 2010-09-29 ソニー株式会社 薄膜半導体デバイスの製造方法
JP4976647B2 (ja) * 2004-07-29 2012-07-18 富士電機株式会社 炭化珪素半導体基板の製造方法
TWI369009B (en) * 2007-09-21 2012-07-21 Nat Univ Chung Hsing Light-emitting chip device with high thermal conductivity
CN102037560B (zh) * 2008-03-21 2012-09-26 Rise技术有限责任公司 通过将多孔硅转变成多孔金属或陶瓷来制作微结构的方法
JP5497409B2 (ja) * 2009-11-09 2014-05-21 株式会社デンソー 半導体装置の製造方法
EP2529394A4 (en) * 2010-01-27 2017-11-15 Yale University Conductivity based selective etch for gan devices and applications thereof
CN103081107B (zh) * 2010-03-09 2017-02-08 得克萨斯州大学系统董事会 多孔和非多孔纳米结构
WO2012051618A2 (en) 2010-10-15 2012-04-19 The Regents Of The University Of California Method for producing gallium nitride substrates for electronic and optoelectronic devices
JP5774900B2 (ja) * 2011-04-28 2015-09-09 学校法人 名城大学 発光ダイオード素子及びその製造方法
WO2014004261A1 (en) 2012-06-28 2014-01-03 Yale University Lateral electrochemical etching of iii-nitride materials for microfabrication

Also Published As

Publication number Publication date
EP3105777A4 (en) 2017-09-13
US9922838B2 (en) 2018-03-20
JP2020107890A (ja) 2020-07-09
WO2015120424A1 (en) 2015-08-13
JP2017516289A (ja) 2017-06-15
CN105981131A (zh) 2016-09-28
CN105981131B (zh) 2019-12-03
EP3105777A1 (en) 2016-12-21
US20170170025A1 (en) 2017-06-15

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