JP2017516289A - 半導体の選択的な電気化学エッチング - Google Patents

半導体の選択的な電気化学エッチング Download PDF

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JP2017516289A
JP2017516289A JP2016551164A JP2016551164A JP2017516289A JP 2017516289 A JP2017516289 A JP 2017516289A JP 2016551164 A JP2016551164 A JP 2016551164A JP 2016551164 A JP2016551164 A JP 2016551164A JP 2017516289 A JP2017516289 A JP 2017516289A
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semiconductor layer
semiconductor
substrate
layer
porosity
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JP2017516289A5 (enExample
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ピー． ダハル，ラジェンドラ
ピー． ダハル，ラジェンドラ
ビー． バト，イシュワラ
ビー． バト，イシュワラ
チョウ，タシン
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Rensselaer Polytechnic Institute
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Rensselaer Polytechnic Institute
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • H01L21/30635—Electrolytic etching of AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3228—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of AIIIBV compounds, e.g. to make them semi-insulating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/043—Manufacture or treatment of planar diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Ceramic Engineering (AREA)
JP2016551164A 2014-02-10 2015-02-10 半導体の選択的な電気化学エッチング Pending JP2017516289A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201461937736P 2014-02-10 2014-02-10
US61/937,736 2014-02-10
PCT/US2015/015112 WO2015120424A1 (en) 2014-02-10 2015-02-10 Selective, electrochemical etching of a semiconductor

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JP2017516289A5 JP2017516289A5 (enExample) 2018-03-15

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JP2020019389A Pending JP2020107890A (ja) 2014-02-10 2020-02-07 半導体の選択的な電気化学エッチング

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US (1) US9922838B2 (enExample)
EP (1) EP3105777A4 (enExample)
JP (2) JP2017516289A (enExample)
KR (1) KR20160119808A (enExample)
CN (1) CN105981131B (enExample)
WO (1) WO2015120424A1 (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020013815A (ja) * 2018-07-13 2020-01-23 株式会社Ｓｃｒｅｅｎホールディングス 基板エッチング方法
JP2020537360A (ja) * 2017-10-16 2020-12-17 クリスタル アイエス, インコーポレーテッドCrystal Is, Inc. 電子及び光電子デバイスのための窒化アルミニウム基板の電気化学的除去
JP2021044271A (ja) * 2019-09-06 2021-03-18 株式会社豊田中央研究所 エッチング液およびエッチング方法
JP2022140396A (ja) * 2021-03-10 2022-09-26 ファーウェイ デジタル パワー テクノロジーズ カンパニー リミテッド 炭化シリコン基板、炭化シリコンデバイス、及びその基板薄化方法
WO2024004872A1 (ja) * 2022-06-30 2024-01-04 東京応化工業株式会社 炭化珪素単結晶基板の処理方法、炭化珪素単結晶基板処理システム、及び補充液

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10379083B2 (en) * 2016-01-04 2019-08-13 Farshid Raissi Electronic device for detection of viruses, bacteria, and pathogens
JP7062757B2 (ja) 2017-09-27 2022-05-06 ケンブリッジ エンタープライズ リミテッド 材料および半導体構造を多孔質化する方法
GB201801337D0 (en) 2018-01-26 2018-03-14 Cambridge Entpr Ltd Method for etching a semiconductor structure
CN112098481B (zh) * 2018-03-30 2021-08-27 厦门大学 一种用于氮化物半导体材料除氢激活的装置
DE102018129594B4 (de) * 2018-11-23 2025-09-04 Infineon Technologies Ag Teilweises entfernen eines halbleiterwafers
WO2021015816A1 (en) * 2019-07-19 2021-01-28 Iqe Plc Semiconductor material having tunable permittivity and tunable thermal conductivity

Citations (5)

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JPH0536916A (ja) * 1991-07-29 1993-02-12 Canon Inc 絶縁ゲート型電界効果トランジスタ及びそれを用いた半導体装置
US5454915A (en) * 1992-10-06 1995-10-03 Kulite Semiconductor Products, Inc. Method of fabricating porous silicon carbide (SiC)
JPH1167616A (ja) * 1997-08-11 1999-03-09 Sony Corp 半導体基板および半導体薄膜ならびにそれらの製造方法
JP2010541209A (ja) * 2007-09-21 2010-12-24 ブリッジラックス インコーポレイテッド 高い光取り出しの発光ダイオードチップとその製造方法
JP2013518447A (ja) * 2010-01-27 2013-05-20 イェイル ユニヴァーシティ ＧａＮデバイスのための導電率ベースの選択的エッチング及びその用途

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JP3088033B2 (ja) * 1991-08-02 2000-09-18 キヤノン株式会社 半導体装置
WO1995032524A1 (en) * 1994-05-24 1995-11-30 Abb Research Ltd. Semiconductor device in silicon carbide with passivated surface
DE10054484A1 (de) * 2000-11-03 2002-05-08 Bosch Gmbh Robert Mikromechanisches Bauelement und entsprechendes Herstellungsverfahren
US6884740B2 (en) * 2001-09-04 2005-04-26 The Regents Of The University Of California Photoelectrochemical undercut etching of semiconductor material
JP4554180B2 (ja) * 2003-09-17 2010-09-29 ソニー株式会社 薄膜半導体デバイスの製造方法
JP4976647B2 (ja) * 2004-07-29 2012-07-18 富士電機株式会社 炭化珪素半導体基板の製造方法
WO2009115551A1 (en) * 2008-03-21 2009-09-24 Rise Technology S.R.L. Method for making microstructures by converting porous silicon into porous metal or ceramics
JP5497409B2 (ja) * 2009-11-09 2014-05-21 株式会社デンソー 半導体装置の製造方法
WO2011156028A2 (en) * 2010-03-09 2011-12-15 Board Of Regents Of The University Of Texas System Porous and non-porous nanostructures
US20130207237A1 (en) 2010-10-15 2013-08-15 The Regents Of The University Of California Method for producing gallium nitride substrates for electronic and optoelectronic devices
JP5774900B2 (ja) * 2011-04-28 2015-09-09 学校法人 名城大学 発光ダイオード素子及びその製造方法
US9583353B2 (en) * 2012-06-28 2017-02-28 Yale University Lateral electrochemical etching of III-nitride materials for microfabrication

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0536916A (ja) * 1991-07-29 1993-02-12 Canon Inc 絶縁ゲート型電界効果トランジスタ及びそれを用いた半導体装置
US5454915A (en) * 1992-10-06 1995-10-03 Kulite Semiconductor Products, Inc. Method of fabricating porous silicon carbide (SiC)
JPH1167616A (ja) * 1997-08-11 1999-03-09 Sony Corp 半導体基板および半導体薄膜ならびにそれらの製造方法
JP2010541209A (ja) * 2007-09-21 2010-12-24 ブリッジラックス インコーポレイテッド 高い光取り出しの発光ダイオードチップとその製造方法
JP2013518447A (ja) * 2010-01-27 2013-05-20 イェイル ユニヴァーシティ ＧａＮデバイスのための導電率ベースの選択的エッチング及びその用途

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020537360A (ja) * 2017-10-16 2020-12-17 クリスタル アイエス, インコーポレーテッドCrystal Is, Inc. 電子及び光電子デバイスのための窒化アルミニウム基板の電気化学的除去
JP2020013815A (ja) * 2018-07-13 2020-01-23 株式会社Ｓｃｒｅｅｎホールディングス 基板エッチング方法
JP7065717B2 (ja) 2018-07-13 2022-05-12 株式会社Ｓｃｒｅｅｎホールディングス 基板エッチング方法
JP2021044271A (ja) * 2019-09-06 2021-03-18 株式会社豊田中央研究所 エッチング液およびエッチング方法
JP2022140396A (ja) * 2021-03-10 2022-09-26 ファーウェイ デジタル パワー テクノロジーズ カンパニー リミテッド 炭化シリコン基板、炭化シリコンデバイス、及びその基板薄化方法
WO2024004872A1 (ja) * 2022-06-30 2024-01-04 東京応化工業株式会社 炭化珪素単結晶基板の処理方法、炭化珪素単結晶基板処理システム、及び補充液

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US20170170025A1 (en) 2017-06-15
WO2015120424A1 (en) 2015-08-13
JP2020107890A (ja) 2020-07-09
US9922838B2 (en) 2018-03-20
EP3105777A4 (en) 2017-09-13
EP3105777A1 (en) 2016-12-21
KR20160119808A (ko) 2016-10-14
CN105981131A (zh) 2016-09-28
CN105981131B (zh) 2019-12-03

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