JP2019512875A - 分割ビームのレーザスクライビングプロセスとプラズマエッチングプロセスとを使用する、ハイブリッドなウエハダイシングの手法 - Google Patents

分割ビームのレーザスクライビングプロセスとプラズマエッチングプロセスとを使用する、ハイブリッドなウエハダイシングの手法 Download PDF

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Publication number
JP2019512875A
JP2019512875A JP2018546040A JP2018546040A JP2019512875A JP 2019512875 A JP2019512875 A JP 2019512875A JP 2018546040 A JP2018546040 A JP 2018546040A JP 2018546040 A JP2018546040 A JP 2018546040A JP 2019512875 A JP2019512875 A JP 2019512875A
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JP
Japan
Prior art keywords
laser
laser beam
scribing
semiconductor wafer
split
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Pending
Application number
JP2018546040A
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English (en)
Japanese (ja)
Inventor
ジョンネ パク，
ジョンネ パク，
ウェイ−ション レイ，
ウェイ−ション レイ，
ブラッド イートン，
ブラッド イートン，
ジェームス エス． パパヌ，
ジェームス エス． パパヌ，
アジャイ クマール，
アジャイ クマール，
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Applied Materials Inc
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Applied Materials Inc
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Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2019512875A publication Critical patent/JP2019512875A/ja
Priority to JP2022155709A priority Critical patent/JP2022191302A/ja
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
    • B65D47/00—Closures with filling and discharging, or with discharging, devices
    • B65D47/04—Closures with discharging devices other than pumps
    • B65D47/20—Closures with discharging devices other than pumps comprising hand-operated members for controlling discharge
    • B65D47/24—Closures with discharging devices other than pumps comprising hand-operated members for controlling discharge with poppet valves or lift valves, i.e. valves opening or closing a passageway by a relative motion substantially perpendicular to the plane of the seat
    • B65D47/241—Closures with discharging devices other than pumps comprising hand-operated members for controlling discharge with poppet valves or lift valves, i.e. valves opening or closing a passageway by a relative motion substantially perpendicular to the plane of the seat the valve being opened or closed by actuating a cap-like element
    • B65D47/244—Closures with discharging devices other than pumps comprising hand-operated members for controlling discharge with poppet valves or lift valves, i.e. valves opening or closing a passageway by a relative motion substantially perpendicular to the plane of the seat the valve being opened or closed by actuating a cap-like element being rotated without axial translation, whilst transmitting axial motion to an internal valve stem or valve seat
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • A—HUMAN NECESSITIES
    • A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
    • A47G—HOUSEHOLD OR TABLE EQUIPMENT
    • A47G19/00—Table service
    • A47G19/22—Drinking vessels or saucers used for table service
    • A—HUMAN NECESSITIES
    • A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
    • A47G—HOUSEHOLD OR TABLE EQUIPMENT
    • A47G19/00—Table service
    • A47G19/22—Drinking vessels or saucers used for table service
    • A47G19/2205—Drinking glasses or vessels
    • A47G19/2266—Means for facilitating drinking, e.g. for infants or invalids
    • A47G19/2272—Means for facilitating drinking, e.g. for infants or invalids from drinking glasses or cups comprising lids or covers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K10/00—Welding or cutting by means of a plasma
    • B23K10/003—Scarfing, desurfacing or deburring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1 ns or less
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
    • B65D47/00—Closures with filling and discharging, or with discharging, devices
    • B65D47/04—Closures with discharging devices other than pumps
    • B65D47/32—Closures with discharging devices other than pumps with means for venting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/072—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures
    • H10W20/087—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures involving multiple stacked pre-patterned masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/501—Marks applied to devices, e.g. for alignment or identification for use before dicing
    • H10W46/503—Located in scribe lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • General Health & Medical Sciences (AREA)
  • Pediatric Medicine (AREA)
  • Health & Medical Sciences (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)
  • Closures For Containers (AREA)
  • Electromagnetism (AREA)
  • Drying Of Semiconductors (AREA)
JP2018546040A 2016-03-03 2017-01-27 分割ビームのレーザスクライビングプロセスとプラズマエッチングプロセスとを使用する、ハイブリッドなウエハダイシングの手法 Pending JP2019512875A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2022155709A JP2022191302A (ja) 2016-03-03 2022-09-29 分割ビームのレーザスクライビングプロセスとプラズマエッチングプロセスとを使用する、ハイブリッドなウエハダイシングの手法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/060,224 2016-03-03
US15/060,224 US9972575B2 (en) 2016-03-03 2016-03-03 Hybrid wafer dicing approach using a split beam laser scribing process and plasma etch process
PCT/US2017/015479 WO2017151254A2 (en) 2016-03-03 2017-01-27 Hybrid wafer dicing approach using a split beam laser scribing process and plasma etch process

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2022155709A Division JP2022191302A (ja) 2016-03-03 2022-09-29 分割ビームのレーザスクライビングプロセスとプラズマエッチングプロセスとを使用する、ハイブリッドなウエハダイシングの手法

Publications (1)

Publication Number Publication Date
JP2019512875A true JP2019512875A (ja) 2019-05-16

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Family Applications (2)

Application Number Title Priority Date Filing Date
JP2018546040A Pending JP2019512875A (ja) 2016-03-03 2017-01-27 分割ビームのレーザスクライビングプロセスとプラズマエッチングプロセスとを使用する、ハイブリッドなウエハダイシングの手法
JP2022155709A Pending JP2022191302A (ja) 2016-03-03 2022-09-29 分割ビームのレーザスクライビングプロセスとプラズマエッチングプロセスとを使用する、ハイブリッドなウエハダイシングの手法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2022155709A Pending JP2022191302A (ja) 2016-03-03 2022-09-29 分割ビームのレーザスクライビングプロセスとプラズマエッチングプロセスとを使用する、ハイブリッドなウエハダイシングの手法

Country Status (8)

Country Link
US (2) US9972575B2 (enExample)
EP (1) EP3214012A1 (enExample)
JP (2) JP2019512875A (enExample)
KR (1) KR20180114220A (enExample)
CN (1) CN108701651B (enExample)
SG (1) SG11201806838YA (enExample)
TW (2) TWI775464B (enExample)
WO (1) WO2017151254A2 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021057404A (ja) * 2019-09-27 2021-04-08 株式会社ディスコ ウエーハの加工方法
JP2021100074A (ja) * 2019-12-23 2021-07-01 株式会社ディスコ 被加工物の加工方法
JP2022544148A (ja) * 2019-08-06 2022-10-17 アプライド マテリアルズ インコーポレイテッド 空間的に複数の焦点を合わせるレーザビームのレーザスクライビング処理およびプラズマエッチング処理を用いるハイブリッドウエハダイシング手法

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10410924B2 (en) * 2017-01-12 2019-09-10 Panasonic Intellectual Property Management Co., Ltd. Manufacturing process of element chip
CN108388735B (zh) * 2018-02-28 2022-04-22 深圳市恒凯微电子科技有限公司 一种设计具有多孔介质层的集成电路的方法
AU2018203169B1 (en) * 2018-05-07 2018-11-08 B.Box For Kids Developments Pty Ltd Drinking vessel and ventilation members
US10720334B2 (en) 2018-07-20 2020-07-21 Asm Ip Holding B.V. Selective cyclic dry etching process of dielectric materials using plasma modification
US10720337B2 (en) * 2018-07-20 2020-07-21 Asm Ip Holding B.V. Pre-cleaning for etching of dielectric materials
US11469141B2 (en) * 2018-08-07 2022-10-11 Texas Instruments Incorporated Laser dicing for singulation
US11355394B2 (en) * 2018-09-13 2022-06-07 Applied Materials, Inc. Wafer dicing using hybrid laser scribing and plasma etch approach with intermediate breakthrough treatment
KR102706426B1 (ko) 2018-09-21 2024-09-12 삼성전자주식회사 기판 쏘잉 방법 및 반도체 칩의 싱귤레이션 방법
US11342226B2 (en) * 2019-08-13 2022-05-24 Applied Materials, Inc. Hybrid wafer dicing approach using an actively-focused laser beam laser scribing process and plasma etch process
GB201917988D0 (en) * 2019-12-09 2020-01-22 Spts Technologies Ltd A semiconductor wafer dicing process
CN114730743B (zh) * 2019-12-19 2025-09-09 Ev集团E·索尔纳有限责任公司 经切割的封装组件及其制造方法
JP2021136248A (ja) * 2020-02-21 2021-09-13 株式会社ディスコ デバイスウェーハの加工方法
KR102913863B1 (ko) * 2021-04-21 2026-01-19 주식회사 제우스 기판처리장치 및 기판처리방법
DE102022204685B3 (de) * 2022-05-13 2023-10-05 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein Optik zur Erzeugung eines linearen Fokus, Vorrichtung und Verfahren zur Bearbeitung eines Werkstücks
JP2024130407A (ja) * 2023-03-14 2024-09-30 パナソニックＩｐマネジメント株式会社 素子チップの製造方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004055684A (ja) * 2002-07-17 2004-02-19 Shinko Electric Ind Co Ltd 半導体装置及びその製造方法
JP2005191039A (ja) * 2003-12-24 2005-07-14 Matsushita Electric Ind Co Ltd 半導体ウェハの処理方法
JP2008193034A (ja) * 2007-02-08 2008-08-21 Matsushita Electric Ind Co Ltd 半導体チップの製造方法
JP2014523113A (ja) * 2011-06-15 2014-09-08 アプライド マテリアルズ インコーポレイテッド マルチステップ・非対称形状レーザビームスクライビング
JP2014526146A (ja) * 2011-07-11 2014-10-02 アプライド マテリアルズ インコーポレイテッド プラズマエッチングを伴うハイブリッド分割ビームレーザスクライビングプロセスを用いたウェハダイシング
JP2015519732A (ja) * 2012-04-10 2015-07-09 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ プラズマエッチングによるハイブリッドマルチステップレーザスクライビングプロセスを用いたウェハダイシング
US20150214109A1 (en) * 2014-01-29 2015-07-30 Wei-Sheng Lei Wafer dicing using hybrid laser scribing and plasma etch approach with mask plasma treatment for improved mask etch resistance

Family Cites Families (99)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4049944A (en) 1973-02-28 1977-09-20 Hughes Aircraft Company Process for fabricating small geometry semiconductive devices including integrated components
US4171060A (en) * 1978-12-11 1979-10-16 Spil-Les Covered drinking cup
US4339528A (en) 1981-05-19 1982-07-13 Rca Corporation Etching method using a hardened PVA stencil
US4684437A (en) 1985-10-31 1987-08-04 International Business Machines Corporation Selective metal etching in metal/polymer structures
JP2761579B2 (ja) * 1991-02-18 1998-06-04 株式会社 半導体エネルギー研究所 基板処理装置
KR100215338B1 (ko) 1991-03-06 1999-08-16 가나이 쓰도무 반도체 장치의 제조방법
US5691794A (en) 1993-02-01 1997-11-25 Canon Kabushiki Kaisha Liquid crystal display device
US5593606A (en) 1994-07-18 1997-01-14 Electro Scientific Industries, Inc. Ultraviolet laser system and method for forming vias in multi-layered targets
JPH09216085A (ja) 1996-02-07 1997-08-19 Canon Inc 基板の切断方法及び切断装置
KR100479962B1 (ko) * 1996-02-09 2005-05-16 어드밴스드 레이저 세퍼래이션 인터내셔널 비.브이. 반도체소자분리방법
US6028722A (en) * 1996-03-08 2000-02-22 Sdl, Inc. Optical beam reconfiguring device and optical handling system for device utilization
DE69725245T2 (de) 1996-08-01 2004-08-12 Surface Technoloy Systems Plc Verfahren zur Ätzung von Substraten
US6426484B1 (en) 1996-09-10 2002-07-30 Micron Technology, Inc. Circuit and method for heating an adhesive to package or rework a semiconductor die
US5920973A (en) 1997-03-09 1999-07-13 Electro Scientific Industries, Inc. Hole forming system with multiple spindles per station
JP3230572B2 (ja) 1997-05-19 2001-11-19 日亜化学工業株式会社 窒化物系化合物半導体素子の製造方法及び半導体発光素子
US6057180A (en) 1998-06-05 2000-05-02 Electro Scientific Industries, Inc. Method of severing electrically conductive links with ultraviolet laser output
US6211488B1 (en) * 1998-12-01 2001-04-03 Accudyne Display And Semiconductor Systems, Inc. Method and apparatus for separating non-metallic substrates utilizing a laser initiated scribe
JP2001044144A (ja) 1999-08-03 2001-02-16 Tokyo Seimitsu Co Ltd 半導体チップの製造プロセス
JP2001110811A (ja) 1999-10-08 2001-04-20 Oki Electric Ind Co Ltd 半導体装置の製造方法
JP4387007B2 (ja) 1999-10-26 2009-12-16 株式会社ディスコ 半導体ウェーハの分割方法
JP2001144126A (ja) 1999-11-12 2001-05-25 Matsushita Electric Ind Co Ltd 半導体装置の製造方法および半導体装置
JP2001148358A (ja) 1999-11-19 2001-05-29 Disco Abrasive Syst Ltd 半導体ウェーハ及び該半導体ウェーハの分割方法
US6300593B1 (en) 1999-12-07 2001-10-09 First Solar, Llc Apparatus and method for laser scribing a coated substrate
US6887804B2 (en) 2000-01-10 2005-05-03 Electro Scientific Industries, Inc. Passivation processing over a memory link
KR100850262B1 (ko) 2000-01-10 2008-08-04 일렉트로 싸이언티픽 인더스트리이즈 인코포레이티드 초단 펄스 폭을 가진 레이저 펄스의 버스트로 메모리링크를 처리하기 위한 레이저 시스템 및 방법
TW504425B (en) 2000-03-30 2002-10-01 Electro Scient Ind Inc Laser system and method for single pass micromachining of multilayer workpieces
GB2386184B (en) 2000-07-12 2004-05-26 Electro Scient Ind Inc UV laser system and method for single pulse severing of IC fuses
US6676878B2 (en) 2001-01-31 2004-01-13 Electro Scientific Industries, Inc. Laser segmented cutting
US6759275B1 (en) 2001-09-04 2004-07-06 Megic Corporation Method for making high-performance RF integrated circuits
US6642127B2 (en) 2001-10-19 2003-11-04 Applied Materials, Inc. Method for dicing a semiconductor wafer
JP3612317B2 (ja) * 2001-11-30 2005-01-19 株式会社東芝 半導体装置の製造方法
JP3910843B2 (ja) 2001-12-13 2007-04-25 東京エレクトロン株式会社 半導体素子分離方法及び半導体素子分離装置
US6706998B2 (en) 2002-01-11 2004-03-16 Electro Scientific Industries, Inc. Simulated laser spot enlargement
KR100451950B1 (ko) 2002-02-25 2004-10-08 삼성전자주식회사 이미지 센서 소자 웨이퍼 소잉 방법
KR20040086725A (ko) 2002-02-25 2004-10-12 가부시기가이샤 디스코 반도체 웨이퍼의 분할 방법
JP2003257896A (ja) 2002-02-28 2003-09-12 Disco Abrasive Syst Ltd 半導体ウェーハの分割方法
JP2005523583A (ja) 2002-04-19 2005-08-04 エグシル テクノロジー リミテッド パルスレーザを用いる、基板のプログラム制御ダイシング
JP2004031526A (ja) 2002-06-24 2004-01-29 Toyoda Gosei Co Ltd ３族窒化物系化合物半導体素子の製造方法
US6582983B1 (en) 2002-07-12 2003-06-24 Keteca Singapore Singapore Method and wafer for maintaining ultra clean bonding pads on a wafer
JP3908148B2 (ja) 2002-10-28 2007-04-25 シャープ株式会社 積層型半導体装置
US20040157457A1 (en) 2003-02-12 2004-08-12 Songlin Xu Methods of using polymer films to form micro-structures
JP2004273895A (ja) 2003-03-11 2004-09-30 Disco Abrasive Syst Ltd 半導体ウエーハの分割方法
US7087452B2 (en) 2003-04-22 2006-08-08 Intel Corporation Edge arrangements for integrated circuit chips
JP2004322168A (ja) 2003-04-25 2004-11-18 Disco Abrasive Syst Ltd レーザー加工装置
JP4231349B2 (ja) 2003-07-02 2009-02-25 株式会社ディスコ レーザー加工方法およびレーザー加工装置
JP4408361B2 (ja) 2003-09-26 2010-02-03 株式会社ディスコ ウエーハの分割方法
US7128806B2 (en) 2003-10-21 2006-10-31 Applied Materials, Inc. Mask etch processing apparatus
JP4471632B2 (ja) 2003-11-18 2010-06-02 株式会社ディスコ ウエーハの加工方法
JP2005203541A (ja) 2004-01-15 2005-07-28 Disco Abrasive Syst Ltd ウエーハのレーザー加工方法
NL1027881C1 (nl) * 2004-05-25 2005-11-30 Swilion B V Afsluitbare drinkbeker.
US7459377B2 (en) 2004-06-08 2008-12-02 Panasonic Corporation Method for dividing substrate
US7804043B2 (en) 2004-06-15 2010-09-28 Laserfacturing Inc. Method and apparatus for dicing of thin and ultra thin semiconductor wafer using ultrafast pulse laser
US7687740B2 (en) 2004-06-18 2010-03-30 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laterally spaced laser beam spots delivering multiple blows
US7507638B2 (en) 2004-06-30 2009-03-24 Freescale Semiconductor, Inc. Ultra-thin die and method of fabricating same
JP4018088B2 (ja) 2004-08-02 2007-12-05 松下電器産業株式会社 半導体ウェハの分割方法及び半導体素子の製造方法
US7199050B2 (en) 2004-08-24 2007-04-03 Micron Technology, Inc. Pass through via technology for use during the manufacture of a semiconductor device
JP4018096B2 (ja) 2004-10-05 2007-12-05 松下電器産業株式会社 半導体ウェハの分割方法、及び半導体素子の製造方法
US20060088984A1 (en) 2004-10-21 2006-04-27 Intel Corporation Laser ablation method
US20060086898A1 (en) 2004-10-26 2006-04-27 Matsushita Electric Industrial Co., Ltd. Method and apparatus of making highly repetitive micro-pattern using laser writer
US20060146910A1 (en) 2004-11-23 2006-07-06 Manoochehr Koochesfahani Method and apparatus for simultaneous velocity and temperature measurements in fluid flow
JP4288229B2 (ja) 2004-12-24 2009-07-01 パナソニック株式会社 半導体チップの製造方法
US7875898B2 (en) 2005-01-24 2011-01-25 Panasonic Corporation Semiconductor device
JP2006253402A (ja) 2005-03-10 2006-09-21 Nec Electronics Corp 半導体装置の製造方法
US7361990B2 (en) 2005-03-17 2008-04-22 Taiwan Semiconductor Manufacturing Company, Ltd. Reducing cracking of high-lead or lead-free bumps by matching sizes of contact pads and bump pads
JP4478053B2 (ja) 2005-03-29 2010-06-09 株式会社ディスコ 半導体ウエーハ処理方法
JP4285455B2 (ja) 2005-07-11 2009-06-24 パナソニック株式会社 半導体チップの製造方法
JP4599243B2 (ja) 2005-07-12 2010-12-15 株式会社ディスコ レーザー加工装置
JP4769560B2 (ja) 2005-12-06 2011-09-07 株式会社ディスコ ウエーハの分割方法
JP4372115B2 (ja) 2006-05-12 2009-11-25 パナソニック株式会社 半導体装置の製造方法、および半導体モジュールの製造方法
JP4480728B2 (ja) 2006-06-09 2010-06-16 パナソニック株式会社 Ｍｅｍｓマイクの製造方法
JP4544231B2 (ja) 2006-10-06 2010-09-15 パナソニック株式会社 半導体チップの製造方法
JP4840200B2 (ja) 2007-03-09 2011-12-21 パナソニック株式会社 半導体チップの製造方法
US7926410B2 (en) 2007-05-01 2011-04-19 J.R. Automation Technologies, L.L.C. Hydraulic circuit for synchronized horizontal extension of cylinders
JP5205012B2 (ja) 2007-08-29 2013-06-05 株式会社半導体エネルギー研究所 表示装置及び当該表示装置を具備する電子機器
JP4858395B2 (ja) 2007-10-12 2012-01-18 パナソニック株式会社 プラズマ処理装置
US7891821B2 (en) * 2007-12-17 2011-02-22 Coherent, Inc. Laser beam transformer and projector having stacked plates
US7859084B2 (en) 2008-02-28 2010-12-28 Panasonic Corporation Semiconductor substrate
JP2009260272A (ja) 2008-03-25 2009-11-05 Panasonic Corp 基板の加工方法および半導体チップの製造方法ならびに樹脂接着層付き半導体チップの製造方法
WO2009126907A2 (en) 2008-04-10 2009-10-15 Applied Materials, Inc. Laser-scribing platform and hybrid writing strategy
KR20090130701A (ko) * 2008-06-16 2009-12-24 삼성전자주식회사 반도체 패키지 및 그의 제조 방법
US20100013036A1 (en) 2008-07-16 2010-01-21 Carey James E Thin Sacrificial Masking Films for Protecting Semiconductors From Pulsed Laser Process
US7891091B2 (en) * 2008-11-25 2011-02-22 Yonggang Li Method of enabling selective area plating on a substrate
US8609512B2 (en) 2009-03-27 2013-12-17 Electro Scientific Industries, Inc. Method for laser singulation of chip scale packages on glass substrates
JP2013512111A (ja) * 2009-11-30 2013-04-11 イ−エスアイ−パイロフォトニクス レーザーズ インコーポレイテッド 一連のレーザパルスを用いて薄膜にラインをスクライブするための方法及び装置
US8642448B2 (en) 2010-06-22 2014-02-04 Applied Materials, Inc. Wafer dicing using femtosecond-based laser and plasma etch
US8483571B2 (en) * 2010-06-30 2013-07-09 Avago Technologies General Ip (Singapore) Pte. Ltd. Optical beam splitter for use in an optoelectronic module, and a method for performing optical beam splitting in an optoelectronic module
US8809120B2 (en) * 2011-02-17 2014-08-19 Infineon Technologies Ag Method of dicing a wafer
US8802545B2 (en) 2011-03-14 2014-08-12 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
US8557682B2 (en) * 2011-06-15 2013-10-15 Applied Materials, Inc. Multi-layer mask for substrate dicing by laser and plasma etch
US8703581B2 (en) * 2011-06-15 2014-04-22 Applied Materials, Inc. Water soluble mask for substrate dicing by laser and plasma etch
US8759197B2 (en) 2011-06-15 2014-06-24 Applied Materials, Inc. Multi-step and asymmetrically shaped laser beam scribing
US8912077B2 (en) * 2011-06-15 2014-12-16 Applied Materials, Inc. Hybrid laser and plasma etch wafer dicing using substrate carrier
US9908687B2 (en) * 2011-11-15 2018-03-06 Ignite Usa, Llc Travel beverage container
US8883614B1 (en) * 2013-05-22 2014-11-11 Applied Materials, Inc. Wafer dicing with wide kerf by laser scribing and plasma etching hybrid approach
US9464778B2 (en) * 2014-01-21 2016-10-11 Cree, Inc. Lighting device utilizing a double fresnel lens
US9012305B1 (en) * 2014-01-29 2015-04-21 Applied Materials, Inc. Wafer dicing using hybrid laser scribing and plasma etch approach with intermediate non-reactive post mask-opening clean
US9610543B2 (en) * 2014-01-31 2017-04-04 Infineon Technologies Ag Method for simultaneous structuring and chip singulation
US9418894B2 (en) * 2014-03-21 2016-08-16 Semiconductor Components Industries, Llc Electronic die singulation method
CN104979187A (zh) * 2014-04-02 2015-10-14 中芯国际集成电路制造(上海)有限公司 晶圆的分割方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004055684A (ja) * 2002-07-17 2004-02-19 Shinko Electric Ind Co Ltd 半導体装置及びその製造方法
JP2005191039A (ja) * 2003-12-24 2005-07-14 Matsushita Electric Ind Co Ltd 半導体ウェハの処理方法
JP2008193034A (ja) * 2007-02-08 2008-08-21 Matsushita Electric Ind Co Ltd 半導体チップの製造方法
JP2014523113A (ja) * 2011-06-15 2014-09-08 アプライド マテリアルズ インコーポレイテッド マルチステップ・非対称形状レーザビームスクライビング
JP2014526146A (ja) * 2011-07-11 2014-10-02 アプライド マテリアルズ インコーポレイテッド プラズマエッチングを伴うハイブリッド分割ビームレーザスクライビングプロセスを用いたウェハダイシング
JP2015519732A (ja) * 2012-04-10 2015-07-09 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ プラズマエッチングによるハイブリッドマルチステップレーザスクライビングプロセスを用いたウェハダイシング
US20150214109A1 (en) * 2014-01-29 2015-07-30 Wei-Sheng Lei Wafer dicing using hybrid laser scribing and plasma etch approach with mask plasma treatment for improved mask etch resistance

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022544148A (ja) * 2019-08-06 2022-10-17 アプライド マテリアルズ インコーポレイテッド 空間的に複数の焦点を合わせるレーザビームのレーザスクライビング処理およびプラズマエッチング処理を用いるハイブリッドウエハダイシング手法
JP2024105227A (ja) * 2019-08-06 2024-08-06 アプライド マテリアルズ インコーポレイテッド 空間的に複数の焦点を合わせるレーザビームのレーザスクライビング処理およびプラズマエッチング処理を用いるハイブリッドウエハダイシング手法
JP2021057404A (ja) * 2019-09-27 2021-04-08 株式会社ディスコ ウエーハの加工方法
JP7300953B2 (ja) 2019-09-27 2023-06-30 株式会社ディスコ ウエーハの加工方法
JP2021100074A (ja) * 2019-12-23 2021-07-01 株式会社ディスコ 被加工物の加工方法
KR20210081246A (ko) * 2019-12-23 2021-07-01 가부시기가이샤 디스코 피가공물의 가공 방법
JP7399565B2 (ja) 2019-12-23 2023-12-18 株式会社ディスコ 被加工物の加工方法
TWI858205B (zh) * 2019-12-23 2024-10-11 日商迪思科股份有限公司 被加工物之加工方法
KR102925970B1 (ko) * 2019-12-23 2026-02-10 가부시기가이샤 디스코 피가공물의 가공 방법

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