JP2019518328A - レーザスクライビング/プラズマエッチングによるハイブリッドのウエハ個片化処理用エッチングマスク - Google Patents
レーザスクライビング/プラズマエッチングによるハイブリッドのウエハ個片化処理用エッチングマスク Download PDFInfo
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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Abstract
Description
Claims (15)
- ウエハ個片化処理のためのエッチングマスクであって、
固形成分及び水をベースにした水溶性マトリクスと、
前記水溶性マトリクス全域に分散している複数の粒子であって、前記粒子は約5−100ナノメートルの範囲の平均直径を有し、前記固形成分の重量%対前記複数の粒子の重量%の比は、約1:0.1−1:4の範囲である、複数の粒子と
を含む、エッチングマスク。 - 前記複数の粒子の平均直径が、約5−50ナノメートルの範囲である、請求項1に記載のエッチングマスク。
- 前記固形成分の重量%対前記複数の粒子の重量%の比が、約1:0.5−1:2の範囲である、請求項1に記載のエッチングマスク。
- 前記複数の粒子が、シリカ(SiO2)粒子、アルミナ(Al2O3)粒子、アルミナ被覆ケイ素粒子、ポリテトラフルオロエチレン(PTFE)粒子、及びこれらの組み合わせからなる群から選択された複数の粒子である、請求項1に記載のエッチングマスク。
- 前記水溶性マトリクスが、ポリビニルアルコール(PVA)ベースの水溶性マトリクス、酸化ポリエチレンベースの水溶性マトリクス、ポリエチレングリコールベースの水溶性マトリクス、及びポリアクリルアミドベースの水溶性マトリクスからなる群から選択された水溶性マトリクスである、請求項1に記載のエッチングマスク。
- 前記水溶性マトリクスが、約10−40重量%の固形成分と、残部水とを含む、請求項1に記載のエッチングマスク。
- 複数の集積回路を備える半導体ウエハをダイシングする方法であって、
前記半導体ウエハ上方にマスクを形成することであって、前記マスクが固形成分及び水をベースにした水溶性マトリクス、並びに前記水溶性マトリクスの全域に分散している複数の粒子を含み、前記固形成分の重量%対前記複数の粒子の重量%の比は、約1:0.1−1:4の範囲である、マスクを形成することと、
前記半導体ウエハの前記集積回路間の領域を露出して、パターニングされたマスクにギャップを設けるために、レーザスクライビング処理で前記マスクをパターニングすることと、
前記集積回路を個片化するために、前記パターニングされたマスク内の前記ギャップを通じて前記半導体ウエハをプラズマエッチングすることであって、前記プラズマエッチング中、前記パターニングされたマスクが前記集積回路を保護する、プラズマエッチングすることと、
を含む方法。 - 前記マスクを形成することが、前記複数の粒子の平均直径が、約5−100ナノメートルの範囲である前記マスクを形成することを含む、請求項7に記載の方法。
- 前記ギャップを通じて前記半導体ウエハをプラズマエッチングすることが、単結晶シリコンウエハをプラズマエッチングすることを含み、前記プラズマエッチング中、前記単結晶シリコンウエハのエッチング速度対前記マスクのエッチング速度の比が、約15:1−170:1である、請求項7に記載の方法。
- 前記半導体ウエハ上方に前記マスクを形成することが、前記半導体ウエハ上に前記マスクをスピンコートすることを含む、請求項7に記載の方法。
- レーザスクライビング処理による前記マスクの前記パターニング中に、前記マスクの前記複数の粒子が、前記レーザスクライビング処理にほぼ干渉しない、請求項7に記載の方法。
- 前記半導体ウエハを前記パターニングされたマスク内の前記ギャップを通じてプラズマエッチングした後に、前記パターニングされたマスクを水溶液を使用して除去することをさらに含む、
請求項7に記載の方法。 - 前記半導体ウエハ上方に前記マスクを形成することは、前記レーザスクライビング処理で前記マスクをパターニングするのに使われるのと同じツールプラットフォーム上で、前記複数の粒子を前記水溶性マトリクスと混合することを含む、請求項7に記載の方法。
- 複数の集積回路を備える半導体ウエハをダイシングする方法であって、
前記半導体ウエハ上方にマスクを形成することであって、前記マスクが固形成分及び水をベースにした水溶性マトリクス、並びに前記水溶性マトリクスの全域に分散している複数の粒子を含み、前記複数の粒子の平均直径は、約5−100ナノメートルの範囲である、マスクを形成することと、
前記半導体ウエハの前記集積回路間の領域を露出して、パターニングされたマスクにギャップを設けるために、レーザスクライビング処理で前記マスクをパターニングすることと、
前記集積回路を個片化するために、前記パターニングされたマスク内の前記ギャップを通じて前記半導体ウエハをプラズマエッチングすることであって、前記プラズマエッチング中、前記パターニングされたマスクが前記集積回路を保護する、プラズマエッチングすることと、
を含む方法。 - 前記ギャップを通じて前記半導体ウエハをプラズマエッチングすることが、単結晶シリコンウエハをプラズマエッチングすることを含み、前記プラズマエッチング中、前記単結晶シリコンウエハのエッチング速度対前記マスクのエッチング速度の比が、約15:1−170:1である、請求項14に記載の方法。
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TW201834057A (zh) | 2018-09-16 |
KR102468060B1 (ko) | 2022-11-17 |
US9793132B1 (en) | 2017-10-17 |
CN109155280B (zh) | 2023-07-28 |
WO2017196549A1 (en) | 2017-11-16 |
CN109155280A (zh) | 2019-01-04 |
SG11201809012PA (en) | 2018-11-29 |
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