JP2019512875A - 分割ビームのレーザスクライビングプロセスとプラズマエッチングプロセスとを使用する、ハイブリッドなウエハダイシングの手法 - Google Patents
分割ビームのレーザスクライビングプロセスとプラズマエッチングプロセスとを使用する、ハイブリッドなウエハダイシングの手法 Download PDFInfo
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Abstract
Description
[0001]本出願は、先行する、「分割ビームのレーザスクライビングプロセスとプラズマエッチングプロセスとを使用する、ハイブリッドなウエハダイシングの手法(HYBRID WAFER DICING APPROACH USING A SPLIT BEAM LASER SCRIBING PROCESS AND PLASMA ETCH PROCESS)」と題された2016年3月3日出願の米国仮特許出願第15/060,224号(その優先権は本書によって請求される)に対する、優先権を主張するものである。
[0003]半導体ウエハの処理においては、シリコン又はその他の半導体材料で構成されたウエハ(基板とも称される)上に、集積回路が形成される。通常、集積回路を形成するには、半導体、導体、又は絶縁体のいずれかである、様々な材料の層が利用される。これらの材料は、集積回路を形成するために、様々な周知のプロセスを使用して、ドープされ、堆積され、かつエッチングされる。各ウエハは処理されて、ダイとして知られる、集積回路を包含する多数の個別領域を形成する。
Claims (15)
- 複数の集積回路を備える半導体ウエハをダイシングする方法であって、
前記集積回路を覆いかつ保護する層を備えるマスクを、前記半導体ウエハ上に形成することと、
間隙を有するパターニングされたマスクを提供するために、分割型レーザビームのレーザスクライビングプロセスを用いて前記マスクをパターニングし、前記半導体ウエハの前記集積回路間の領域を露出させることと、
前記集積回路を個片化するために、前記パターニングされたマスクの前記間隙を通じて、前記半導体ウエハをプラズマエッチングすることとを含む、方法。 - 前記分割型レーザビームのレーザスクライビングプロセスを用いてスクライブすることが、対称に分割されたレーザビームを用いてスクライブすることを含む、請求項1に記載の方法。
- 前記分割型レーザビームのレーザスクライビングプロセスを用いてスクライブすることが、非対称に分割されたレーザビームを用いてスクライブすることを含む、請求項1に記載の方法。
- 前記分割型レーザビームのレーザスクライビングプロセスを用いてスクライブすることが、線形平坦頂部のビームプロファイルを伴ってスクライブすることを含む、請求項1に記載の方法。
- 前記分割型レーザビームのレーザスクライビングプロセスを用いてスクライブすることが、フェムト秒ベースのレーザビームを用いてスクライブすることを含む、請求項1に記載の方法。
- 前記レーザスクライビングプロセスを用いて前記マスクをパターニングすることが、前記半導体ウエハの前記集積回路間の前記領域内にトレンチを形成することを含み、前記半導体ウエハをプラズマエッチングすることが、前記トレンチを延伸させて、対応するトレンチ延伸部を形成することを含む、請求項1に記載の方法。
- 前記トレンチの各々が一定の幅を有し、前記対応するトレンチ延伸部の各々も前記幅を有する、請求項6に記載の方法。
- 前記分割型レーザビームのレーザスクライビングプロセスを用いて前記マスクをパターニングした後の、前記間隙を通じて前記半導体ウエハをプラズマエッチングする前に、プラズマプロセスを用いて前記半導体ウエハの露出した前記領域を洗浄することを更に含む、請求項1に記載の方法。
- 複数の集積回路を備える半導体ウエハをダイシングするためのシステムであって、
ファクトリインターフェースと、
前記ファクトリインターフェースに連結され、かつ、分割型レーザビームを提供するよう構成されたレーザアセンブリを備える、レーザスクライビング装置と、
前記ファクトリインターフェースに連結されたプラズマエッチングチャンバとを備える、システム。 - 前記レーザアセンブリが、前記分割型レーザビームを対称に分割されたレーザビームとして提供するよう構成される、請求項9に記載のシステム。
- 前記レーザビームがフェムト秒ベースのレーザビームである、請求項10に記載のシステム。
- 前記レーザアセンブリが、前記分割型レーザビームを非対称に分割されたレーザビームとして提供するよう構成される、請求項9に記載のシステム。
- 前記レーザビームがフェムト秒ベースのレーザビームである、請求項12に記載のシステム。
- 前記レーザアセンブリが、前記分割型レーザビームを線形平坦頂部のプロファイルとして提供するよう構成される、請求項9に記載のシステム。
- 前記プラズマエッチングチャンバが、ディープシリコンエッチングを実施するよう構成されており、
前記ファクトリインターフェースに連結された第2プラズマエッチングチャンバであって、プラズマベースの洗浄プロセスを実施するよう構成された、第2プラズマエッチングチャンバを更に備える、請求項9に記載のシステム。
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JP2021057404A (ja) * | 2019-09-27 | 2021-04-08 | 株式会社ディスコ | ウエーハの加工方法 |
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JP7399565B2 (ja) | 2019-12-23 | 2023-12-18 | 株式会社ディスコ | 被加工物の加工方法 |
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TWI775464B (zh) | 2022-08-21 |
CN108701651A (zh) | 2018-10-23 |
KR20180114220A (ko) | 2018-10-17 |
WO2017151254A3 (en) | 2018-07-26 |
EP3214012A1 (en) | 2017-09-06 |
US20180226355A1 (en) | 2018-08-09 |
JP2022191302A (ja) | 2022-12-27 |
WO2017151254A2 (en) | 2017-09-08 |
TWI731935B (zh) | 2021-07-01 |
US11217536B2 (en) | 2022-01-04 |
TW202141626A (zh) | 2021-11-01 |
US20170256500A1 (en) | 2017-09-07 |
US9972575B2 (en) | 2018-05-15 |
TW201740460A (zh) | 2017-11-16 |
CN108701651B (zh) | 2023-08-01 |
SG11201806838YA (en) | 2018-09-27 |
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