JP7399565B2 - 被加工物の加工方法 - Google Patents
被加工物の加工方法 Download PDFInfo
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- JP7399565B2 JP7399565B2 JP2019231852A JP2019231852A JP7399565B2 JP 7399565 B2 JP7399565 B2 JP 7399565B2 JP 2019231852 A JP2019231852 A JP 2019231852A JP 2019231852 A JP2019231852 A JP 2019231852A JP 7399565 B2 JP7399565 B2 JP 7399565B2
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- 235000012431 wafers Nutrition 0.000 description 101
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
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- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
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- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
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- 239000011368 organic material Substances 0.000 description 1
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
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- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
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- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
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- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Dicing (AREA)
- Laser Beam Processing (AREA)
Description
11a 表面
11b 裏面
11c 溝
13 分割予定ライン(ストリート)
15 デバイス
15a 平坦面
15b バンプ
15c 隙間
17 紫外線硬化樹脂
19 樹脂膜
19a 表面
19b 溝
21 保護テープ
23 ウェーハユニット
25 WL-CSP
10 貼り合わせ装置
12 台
12a 下面
12b 上面
14a UVランプ
14b 薄板
16 ノズル
18 樹脂供給源
20 搬送装置
22 枠体
22a 凹部
22b 第1流路
22c 第2流路
24 多孔質プレート
24a 一面
26 吸引源
28 アーム
30 バイト切削装置
32 チャックテーブル
32a 保持面
34 バイト切削ユニット
34a スピンドルハウジング
34b スピンドル
34c ホイールマウント
36 バイトホイール
38 バイト工具
38a 基部
38b 切り刃
40 錘部
50 レーザー加工装置
52 加工ヘッド
54 プラズマエッチング装置
L レーザービーム
P エッチングガス
Claims (1)
- 被加工物の表面側に設定された複数の分割予定ラインにより複数の領域に区画された各領域に複数のバンプが設けられた被加工物の加工方法であって、
流動性を有する硬化性樹脂が供給された台の上面側と対面する様に該被加工物の該表面を下向きにして該被加工物を保持する保持工程と、
該被加工物を下方に移動させて、該被加工物の該表面側を該硬化性樹脂に押し当てることにより、該硬化性樹脂が該バンプと該表面との隙間に入り込み且つ該バンプが該硬化性樹脂に埋まる様に、該被加工物の該表面の全体を該硬化性樹脂で被覆する被覆工程と、
該硬化性樹脂を硬化させて樹脂膜を形成する硬化工程と、
該硬化工程の後、該樹脂膜に吸収される波長を有するレーザービームを各分割予定ラインに沿って該樹脂膜に照射して、各分割予定ライン上の該樹脂膜を除去するレーザービーム照射工程と、
該レーザービーム照射工程の後、該被加工物にプラズマ化したガスを供給して、該樹脂膜をマスクとして各分割予定ラインに沿って該被加工物を個々のデバイスチップに分割する分割工程と、
を備え、
該レーザービーム照射工程の前に、該樹脂膜の表面をバイト工具で切削して該樹脂膜を薄化する薄化工程を更に備えることを特徴とする被加工物の加工方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019231852A JP7399565B2 (ja) | 2019-12-23 | 2019-12-23 | 被加工物の加工方法 |
KR1020200165517A KR20210081246A (ko) | 2019-12-23 | 2020-12-01 | 피가공물의 가공 방법 |
US17/118,755 US11355359B2 (en) | 2019-12-23 | 2020-12-11 | Workpiece processing method |
CN202011465705.2A CN113097063A (zh) | 2019-12-23 | 2020-12-14 | 被加工物的加工方法 |
DE102020216161.5A DE102020216161A1 (de) | 2019-12-23 | 2020-12-17 | Werkstückbearbeitungsverfahren |
TW109145420A TW202125605A (zh) | 2019-12-23 | 2020-12-22 | 被加工物之加工方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019231852A JP7399565B2 (ja) | 2019-12-23 | 2019-12-23 | 被加工物の加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021100074A JP2021100074A (ja) | 2021-07-01 |
JP7399565B2 true JP7399565B2 (ja) | 2023-12-18 |
Family
ID=76205988
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2019231852A Active JP7399565B2 (ja) | 2019-12-23 | 2019-12-23 | 被加工物の加工方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US11355359B2 (ja) |
JP (1) | JP7399565B2 (ja) |
KR (1) | KR20210081246A (ja) |
CN (1) | CN113097063A (ja) |
DE (1) | DE102020216161A1 (ja) |
TW (1) | TW202125605A (ja) |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017050536A (ja) | 2015-08-31 | 2017-03-09 | 株式会社ディスコ | ウェハを処理する方法 |
JP2017079291A (ja) | 2015-10-21 | 2017-04-27 | 株式会社ディスコ | ウエーハの加工方法 |
JP2017112158A (ja) | 2015-12-15 | 2017-06-22 | 三菱電機株式会社 | 半導体装置の製造方法 |
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JP2019512875A (ja) | 2016-03-03 | 2019-05-16 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 分割ビームのレーザスクライビングプロセスとプラズマエッチングプロセスとを使用する、ハイブリッドなウエハダイシングの手法 |
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