JP2017050536A - ウェハを処理する方法 - Google Patents
ウェハを処理する方法 Download PDFInfo
- Publication number
- JP2017050536A JP2017050536A JP2016163515A JP2016163515A JP2017050536A JP 2017050536 A JP2017050536 A JP 2017050536A JP 2016163515 A JP2016163515 A JP 2016163515A JP 2016163515 A JP2016163515 A JP 2016163515A JP 2017050536 A JP2017050536 A JP 2017050536A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- protective film
- carrier
- curable resin
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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- 238000012545 processing Methods 0.000 title claims abstract description 33
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- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 2
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- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
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- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
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- 239000010949 copper Substances 0.000 description 1
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- 230000001419 dependent effect Effects 0.000 description 1
- UHESRSKEBRADOO-UHFFFAOYSA-N ethyl carbamate;prop-2-enoic acid Chemical compound OC(=O)C=C.CCOC(N)=O UHESRSKEBRADOO-UHFFFAOYSA-N 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/146—Mixed devices
- H01L2924/1461—MEMS
Abstract
Description
Claims (12)
- 複数の分割ライン(11)によって区切られた複数のデバイスを備えたデバイス領域(2)と、デバイスを持たず、デバイス領域(2)の周りに形成される周辺限界領域(3)とを一面(1)に有するウェハ(W)を処理する方法において、
前記デバイス領域(2)は、前記ウェハ(W)の平坦面から突出する複数の突出部(14)で形成され、当該方法は、
前記ウェハ(W)上の前記デバイスを覆う為に、保護フィルム(4)を前記ウェハ(W)の前記一面(1)に付けるステップであって、前記保護フィルム(4)が接着材で前記ウェハ(W)の前記一面(1)の少なくとも一部に付けられる、前記ステップと、
表の面(17)に硬化性樹脂(13)が加えられるキャリア(7)を準備するステップと、
前記保護フィルム(4)が付けられた前記ウェハ(W)の前記一面(1)を前記キャリア(7)の前記表の面(17)に付けるステップであって、前記ウェハ(W)の前記平坦面から突出する突出部(14)は、前記硬化性樹脂(13)に埋め込まれ、前記キャリア(7)の前記表の面(17)の反対側にある裏の面(18)は、前記一面(1)の反対側にある前記ウェハ(W)の前記面(6)に対して実質的に平行である、前記ステップと、
前記ウェハ(W)の厚さを調整する為、前記一面(1)の反対側にある前記ウェハ(W)の前記面(6)を研削するステップと、
を含む、方法。 - 前記分割ライン(11)に沿って前記ウェハ(W)を切断するステップを更に含む、請求項1に記載の方法。
- 前記硬化性樹脂(13)が加えられた前記キャリア(7)および前記保護フィルム(4)を前記ウェハ(W)から取り外すステップを更に含む、請求項1または2に記載の方法。
- 前記ウェハ(W)を切断するステップは、前記硬化性樹脂(13)が加えられた前記キャリア(7)および前記保護フィルム(4)を前記ウェハ(W)から取り外すステップの後に行われる、請求項3に記載の方法。
- 前記ウェハ(W)を切断するステップは、前記保護フィルム(4)および前記キャリア(7)が前記ウェハ(W)に付けられた状態で行われる、請求項2または3に記載の方法。
- 前記接着材は、前記ウェハ(W)の前記一面(1)および前記保護フィルム(4)の全体の接触領域にわたって設けられる、請求項1〜5のいずれか一項に記載の方法。
- 前記保護フィルム(4)は拡張可能であり、前記保護フィルム(4)は、前記ウェハ(W)の前記平坦面から突出する前記突出部(14)の外形に追従するように、前記ウェハ(W)の前記一面(1)に付けられるときに拡張される、請求項1〜6のいずれか一項に記載の方法。
- 前記硬化性樹脂(13)は、UV線、熱、電界および/または化学剤のような外部刺激によって硬化可能である、請求項1〜7のいずれか一項に記載の方法。
- 前記一面(1)の反対側にある前記ウェハ(W)の前記面(6)を研削する前に前記樹脂(13)を硬化する為に、前記外部刺激を前記硬化性樹脂(13)に加えるステップを更に含む、請求項8に記載の方法。
- 加えられた前記硬化性樹脂(13)と共に前記キャリア(7)の一部分(23)を切り離すステップを更に含み、前記一部分(23)は、前記一面(1)の反対側にある前記ウェハ(W)の前記面(6)を研削する前に、前記ウェハ(W)の周囲を越えて側面に延びている、請求項1〜9のいずれか一項に記載の方法。
- 前記キャリア(7)は、PETおよび/またはシリコンおよび/またはガラスおよび/またはSUSのような剛性材料で形成される、請求項1〜10のいずれか一項に記載の方法。
- 前記保護フィルム(4)は、5〜200μmの範囲の厚さを有する、請求項1〜11のいずれか一項に記載の方法。
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TW201719814A (zh) | 2017-06-01 |
US10256148B2 (en) | 2019-04-09 |
KR101860210B1 (ko) | 2018-05-21 |
CN106486408A (zh) | 2017-03-08 |
CN106486408B (zh) | 2019-06-11 |
US20170062278A1 (en) | 2017-03-02 |
KR20170026301A (ko) | 2017-03-08 |
TWI654716B (zh) | 2019-03-21 |
JP6312343B2 (ja) | 2018-04-18 |
DE102015216619A1 (de) | 2017-03-02 |
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