JP7025171B2 - 被加工物の研削方法 - Google Patents
被加工物の研削方法 Download PDFInfo
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- JP7025171B2 JP7025171B2 JP2017198405A JP2017198405A JP7025171B2 JP 7025171 B2 JP7025171 B2 JP 7025171B2 JP 2017198405 A JP2017198405 A JP 2017198405A JP 2017198405 A JP2017198405 A JP 2017198405A JP 7025171 B2 JP7025171 B2 JP 7025171B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B19/00—Single-purpose machines or devices for particular grinding operations not covered by any other main group
- B24B19/22—Single-purpose machines or devices for particular grinding operations not covered by any other main group characterised by a special design with respect to properties of the material of non-metallic articles to be ground
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
Description
また、本発明によれば、接着剤が被加工物の外周部側面を固定しているのみで、支持基台の表面および被加工物の表面には接着剤が接触してないため、第1剥離ステップでは支持基台から容易に支持基台用保護部材を剥離することができ、第2剥離ステップでは被加工物の表面から容易に被加工物用保護部材を剥離することができる。
図1に示すように、被加工物Wの表面WaのデバイスDが形成された領域を被加工物用保護部材1で覆う。本実施形態に示す被加工物用保護部材1は、粘着性を有し、かつ、被加工物Wと略同径の大きさを有している。また、被加工物用保護部材1は、例えば、ポリオレフィンやポリ塩化ビニル等なる基材に糊層(粘着層)が積層された粘着テープである。被加工物用保護部材1を被加工物Wの表面Waに貼着して、その表面Waの全面を覆うことにより、各デバイスDが保護される。
図2に示すように、支持基台10の表面11を支持基台用保護部材2で覆う。支持基台10は、研削加工中に被加工物Wを支持して補強するための支持部材であり、例えば、ガラスやセラミックスにより構成されている。支持基台用保護部材2についても、特に限定されず、被加工物用保護部材1と同様の粘着テープによって構成されている。支持基台用保護部材2を支持基台10の表面11に貼着して、その表面11の全面を覆うことにより、表面11が保護される。なお、支持基台10及び支持基台用保護部材2は、被加工物Wの外径よりも大きい径を有している。
図3に示すように、被加工物Wと支持基台10とを接着剤3によって接着固定する。接着剤3は、加熱または紫外線の照射による処理によって硬化する液状の樹脂で構成されていることが好ましい。図3(a)に示すように、図示の例では、硬化する前の接着剤3を、支持基台10の表面11に貼着された支持基台用保護部材2の上に予め塗布しておくとよい。
被加工物ユニット形成ステップを実施した後、図5に示すように、被加工物ユニット4をチャックテーブル20の保持面21で保持し、チャックテーブル20の上方側に配設された研削手段30によって被加工物Wの裏面Wbを研削する。研削手段30は、保持面21と直交する鉛直方向の軸心を有する回転軸31と、回転軸31の下端にマウント32を介して装着された研削ホイール33と、研削ホイール33の下部にリング状に固着された研削砥石34とを備えている。研削手段30には、図示しない昇降手段が接続されており、昇降手段によって研削ホイール33を回転させながら研削手段30の全体を昇降させることができる。
研削ステップを実施した後、図7に示すように、支持基台10に接着され被加工物Wの外周部側面Wcから外側に突出した支持基台用保護部材2の外周縁部2aに、例えば、支持基台用保護部材2よりも粘着力の高い剥離テープを貼着してこれを引き上げることにより、支持基台10から被加工物Wと被加工物用保護部材1と接着剤3と支持基台用保護部材2とを一体として捲るように剥離する。これにより、支持基台10の表面11から容易に支持基台用保護部材2を引き剥がし、被加工物Wの外周部C側を持ち上げることができる。そして、支持基台10の表面11の全面から支持基台用保護部材2を引き剥がすことにより、支持基台10から被加工物Wを完全に剥離する。
第1剥離ステップを実施した後、図8に示すように、被加工物Wの表裏を反転させ、被加工物Wの表面Waを上向きにさせる。第2剥離ステップの剥離する動作は、第1剥離ステップと同様の動作により行うとよい。すなわち、支持基台用保護部材2の外周縁部2aに、例えば、被加工物用保護部材1よりも粘着力の高い剥離テープを貼着してこれを引き上げることにより、被加工物Wの表面Waから被加工物用保護部材1と接着剤3と支持基台用保護部材2とを一体として捲るように剥離する。このとき、被加工物Wの表面Waには、被加工物用保護部材1のみが貼着されているだけであるため、剥離テープにより被加工物Wの表面Waから容易に被加工物用保護部材1を引き剥がすことができる。そして、被加工物Wの表面Waの全面から被加工物用保護部材1を引き剥がすことにより、被加工物Wの表面Waの全面を露出させることができる。このようにして、加工精度の良好な被加工物Wを得ることができる。
また、本発明では、接着剤3で被加工物Wの外周部側面Wcを固定しているだけで、支持基台10の表面11および被加工物Wの表面Waには接着剤3が接触していないため、第1剥離ステップでは支持基台10から容易に支持基台用保護部材2を剥離可能となり、第2剥離ステップでは被加工物Wの表面Waから容易に被加工物用保護部材1を剥離可能となる。
10:支持基台 11:表面
20:チャックテーブル 21:保持面
30:研削手段 31:回転軸 32:マウント 33:研削ホイール 34:研削砥石
Claims (5)
- 格子状に形成された複数の分割予定ラインに区画された領域にデバイスが形成された表面を有する被加工物の裏面を、研削砥石で研削する被加工物の研削方法であって、
該被加工物の該表面の該デバイスが形成された領域を被加工物用保護部材で覆う第1表面保護ステップと、
支持基台の表面を支持基台用保護部材で覆う第2表面保護ステップと、
該被加工物の該表面の該デバイスが形成された領域を覆った該被加工物用保護部材側と該支持基台の該表面を覆った該支持基台保護部材側とを接着剤で貼着し、該被加工物を該支持基台に押圧することにより、該接着剤を該被加工物の外周部側面に回り込ませ該外周部側面を固定して被加工物ユニットを形成する被加工物ユニット形成ステップと、
該被加工物ユニットの該支持基台をチャックテーブルの保持面で保持し、該保持面と直交する回転軸により回転する研削砥石によって該被加工物の該裏面を研削し、該被加工物を湾曲可能な厚みまで薄化する研削ステップと、
該被加工物の外周部側面から突出した該支持基台用保護部材の外周縁部に該支持基台用保護部材よりも粘着力の高い剥離テープを貼着して引き上げることにより、該研削ステップを実施した後の該被加工物と該被加工物用保護部材と該接着剤と該支持基台用保護部材とを一体として捲るように該支持基台から剥離する第1剥離ステップと、
該第1剥離ステップを実施した後、該支持基台用保護部材の該外周縁部に該被加工物用保護部材よりも粘着力の高い剥離テープを貼着して引き上げることにより、該被加工物用保護部材と該接着剤と該支持基台用保護部材とを一体として該被加工物から剥離する第2剥離ステップとを備え、
該接着剤で該被加工物の該外周部側面を支持して該被加工物の反りにより該支持基台から該被加工物の外周部が剥がれることを抑制する被加工物の研削方法。 - 前記被加工物用保護部材および前記支持基台用保護部材は、粘着テープであることを特徴とする請求項1記載の被加工物の研削方法。
- 前記接着剤は、加熱または紫外線照射の処理により硬化する液状の樹脂であることを特徴とする請求項1記載の被加工物の研削方法。
- 前記被加工物は、サファイアウェーハである請求項1記載の被加工物の研削方法。
- 前記研削ステップを実施した後の前記被加工物の厚みは100μm以下である請求項4記載の被加工物の研削方法。
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JP2017198405A JP7025171B2 (ja) | 2017-10-12 | 2017-10-12 | 被加工物の研削方法 |
MYPI2018703461A MY192236A (en) | 2017-10-12 | 2018-09-24 | Workpiece grinding method |
SG10201808469SA SG10201808469SA (en) | 2017-10-12 | 2018-09-26 | Workpiece grinding method |
US16/153,077 US10933503B2 (en) | 2017-10-12 | 2018-10-05 | Workpiece grinding method |
KR1020180118820A KR102535551B1 (ko) | 2017-10-12 | 2018-10-05 | 피가공물의 연삭 방법 |
CN201811171352.8A CN109664163B (zh) | 2017-10-12 | 2018-10-09 | 被加工物的磨削方法 |
DE102018217434.2A DE102018217434B4 (de) | 2017-10-12 | 2018-10-11 | Werkstückschleifverfahren |
TW107135784A TWI773838B (zh) | 2017-10-12 | 2018-10-11 | 被加工物的研削方法 |
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KR20190041412A (ko) | 2019-04-22 |
MY192236A (en) | 2022-08-10 |
US20190111536A1 (en) | 2019-04-18 |
KR102535551B1 (ko) | 2023-05-22 |
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CN109664163B (zh) | 2022-05-03 |
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