TWI773838B - 被加工物的研削方法 - Google Patents

被加工物的研削方法 Download PDF

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TWI773838B
TWI773838B TW107135784A TW107135784A TWI773838B TW I773838 B TWI773838 B TW I773838B TW 107135784 A TW107135784 A TW 107135784A TW 107135784 A TW107135784 A TW 107135784A TW I773838 B TWI773838 B TW I773838B
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workpiece
protective member
grinding
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三原拓也
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日商迪思科股份有限公司
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    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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    • B24—GRINDING; POLISHING
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    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B19/00—Single-purpose machines or devices for particular grinding operations not covered by any other main group
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
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    • B24—GRINDING; POLISHING
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    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/06—Work supports, e.g. adjustable steadies
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
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    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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Abstract

本發明的課題是在於抑制研削中的被加工物的外周部剝落，且容易從支撐基台剝離被加工物。 　　其解決手段，被加工物的研削方法包含： 　　第1表面保護步驟，其係以被加工物用保護構件(1)來覆蓋被加工物(W)的表面(Wa)； 　　第2表面保護步驟，其係以支撐基台用保護構件(2)來覆蓋支撐基台(10)的表面(11)； 　　被加工物單元形成步驟，其係將黏著劑(3)繞進外周部側面(Wc)固定而形成被加工物單元(4)； 　　研削步驟，其係薄化被加工物(W)； 　　第1剝離步驟，其係以將薄化後的被加工物(W)、被加工物用保護構件(1)、黏著劑(3)及支撐基台用保護構件(2)設為一體掀起的方式從支撐基台(10)剝離；及 　　第2剝離步驟，其係將被加工物用保護構件(1)、黏著劑(3)及支撐基台用保護構件(2)設為一體從被加工物(W)剝離。

Description

被加工物的研削方法
本發明是有關研削被加工物而薄化之被加工物的研削方法。
雖有以研削砥石來薄化半導體晶圓或藍寶石、SiC基板等的光裝置晶圓等的研削技術，但光裝置晶圓是硬質難研削。亦即，即使以背面研磨用的黏著膠帶來保護光裝置晶圓，也會因研削加工的負荷所造成的光裝置晶圓的沈入而發生薄化研削中的被加工物的破裂、缺口、屑(chipping)等的研削不良。為此，有以蠟(wax)等的硬化的黏著劑來將被加工物固定於陶瓷或玻璃等的支撐基台，即使接受研削負荷，也因被固定於硬的支撐基板而可抑止破損之類的加工方法(例如參照下述的專利文獻1)。 [先前技術文獻] [專利文獻]
[專利文獻1]日本特開2013-187281號公報
(發明所欲解決的課題)
但，若薄化後的被加工物的厚度成為100μm以下，則被加工物的翹曲會更強發生，因此研削中的被加工物的外周部會從支撐基台剝落，產生被加工物的破裂、缺口、屑等的研削不良。並且，使用在研削中被加工物的外周部的剝落不會發生的硬度及黏著力高的黏著劑時，在從薄化研削後的支撐基台剝離被加工物的剝離步驟發生被加工物的破裂等的不良。
因此，本發明的目的是在於提供一種研削中抑制被加工物的外周部剝落的發生，且在從支撐基台剝離薄化後的被加工物時，使能容易從支撐基台剝離被加工物之被加工物的研削方法。 (用以解決課題的手段)
若根據本發明，則提供一種被加工物的研削方法，係以研削砥石來研削被加工物的背面之被加工物的研削方法，該被加工物係具有在被形成為格子狀的複數的分割預定線所區劃的各區域形成有裝置的表面，其特徵為具備： 　　第1表面保護步驟，其係以被加工物用保護構件來覆蓋該被加工物的該表面之形成有該裝置的區域； 　　第2表面保護步驟，其係以支撐基台用保護構件來覆蓋支撐基台的表面；及 　　被加工物單元形成步驟，其係以黏著劑來貼附覆蓋了該被加工物的該表面之形成有該裝置的區域之該被加工物用保護構件側與覆蓋了該支撐基台的該表面之該支撐基台保護構件側，藉由將該被加工物推壓至該支撐基台，使該黏著劑繞進該被加工物的外周部側面，固定該外周部側面而形成被加工物單元； 　　研削步驟，其係以吸盤平台的保持面來保持該被加工物單元的該支撐基台，藉由利用與該保持面正交的旋轉軸進行旋轉的研削砥石來研削該被加工物的該背面，將該被加工物薄化至可彎曲的厚度； 　　第1剝離步驟，其係以將實施該研削步驟後的該被加工物、該被加工物用保護構件、該黏著劑及該支撐基台用保護構件設為一體而掀起的方式從該支撐基台剝離；及 　　第2剝離步驟，其係實施該第1剝離步驟後，將該被加工物用保護構件、該黏著劑及該支撐基台用保護構件設為一體而從該被加工物剝離， 　　以該黏著劑來支撐該被加工物的該外周部側面，而抑制該被加工物的外周部藉由該被加工物的翹曲而從該支撐基台剝落。
最好上述被加工物用保護構件及上述支撐基台用保護構件為黏著膠帶。最好上述黏著劑為藉由加熱或紫外線照射的處理來硬化的液狀的樹脂。
最好上述被加工物為藍寶石晶圓。又，最好實施上述研削步驟後的上述被加工物的厚度為100μm以下。 [發明的效果]
若根據本發明的被加工物的研削方法，則被加工物的研削中，被加工物的外周部側面會以黏著劑來牢固地被固定，可抑制被加工物的外周部從支撐基台剝落，可防止在被加工物發生破裂、缺口、屑等的研削不良。 　　又，若根據本發明，則黏著劑只固定被加工物的外周部側面，在支撐基台的表面及被加工物的表面是未接觸黏著劑，因此在第1剝離步驟中可容易從支撐基台剝離支撐基台用保護構件，在第2剝離步驟中可容易從被加工物的表面剝離被加工物用保護構件。
上述被加工物用保護構件及上述支撐基台用保護構件為藉由黏著膠帶所構成時，可容易實施上述第1剝離步驟及上述第2剝離步驟。又，上述黏著劑為藉由利用加熱或紫外線照射的處理來硬化的液狀的樹脂所構成時，在實施被加工物單元形成步驟時，可使黏著劑效率佳繞進被加工物的外周部側面。
上述被加工物為藍寶石晶圓時，雖薄化後的外周部的翹曲容易變大，但若根據本發明，則由於被加工物的外周部側面會藉由黏著劑來牢固地被固定，因此即使是硬質材的被加工物也可進行良好的研削。又，實施上述研削步驟後的上述被加工物的厚度被設定於100μm以下時，雖容易在薄化後的外周部產生翹曲，但若根據本發明，則可一邊抑制薄化後的外周部的翹曲，一邊研削成所望的厚度。
圖1所示的被加工物W是具備圓形板狀的基板，具有表面Wa，該表面Wa是在藉由被形成格子狀的複數的分割預定線S所區劃的各區域中分別形成有裝置D。與被加工物W的表面Wa相反側的背面Wb是成為被實施例如藉由研削砥石的研削加工之被加工面。本實施形態所示的被加工物W是例如藉由藍寶石晶圓所構成。研削前的被加工物W的厚度是未特別加以限定，例如成為700μm。以下，說明有關研削被加工物W的背面Wb之被加工物的研削方法。
(1)第1表面保護步驟 　　如圖1所示般，以被加工物用保護構件1來覆蓋被加工物W的表面Wa之形成有裝置D的區域。本實施形態所示的被加工物用保護構件1是具有黏著性，且具有與被加工物W大致同徑的大小。又，被加工物用保護構件1是例如在聚烯烴或聚氯乙烯等所成的基材層疊糊層(黏著層)的黏著膠帶。將被加工物用保護構件1貼附於被加工物W的表面Wa，覆蓋其表面Wa的全面，藉此保護各裝置D。
(2)第2表面保護步驟 　　如圖2所示般，以支撐基台用保護構件2來覆蓋支撐基台10的表面11。支撐基台10是用以在研削加工中支撐被加工物W而補強的支撐構件，例如藉由玻璃或陶瓷來構成。有關支撐基台用保護構件2也未特別加以限定，藉由與被加工物用保護構件1同樣的黏著膠帶來構成。將支撐基台用保護構件2貼附於支撐基台10的表面11，覆蓋其表面11的全面，藉此保護表面11。另外，支撐基台10及支撐基台用保護構件2是具有比被加工物W的外徑更大的徑。
在本實施形態中，實施第1表面保護步驟之後實施第2表面保護步驟，但不限於此情況，亦可同時實施第1表面保護步驟及第2表面保護步驟，或亦可實施第2表面保護步驟之後實施第1表面保護步驟。
(3)被加工物單元形成步驟 　　如圖3所示般，黏著劑3來黏著固定被加工物W與支撐基台10。黏著劑3是以藉由利用加熱或紫外線的照射之處理來硬化的液狀的樹脂所構成為理想。如圖3(a)所示般，在圖示的例子中，可將硬化之前的黏著劑3預先塗佈於被貼附在支撐基台10的表面11之支撐基台用保護構件2上。
又，黏著劑3為了在後述的被加工物W的研削中使被加工物W及支撐基台10不會剝落，選定硬度更高，黏度更高的類型的樹脂使用為合適。本實施形態所示的黏著劑3是例如藉由TISC CO.，LTD.製的製品[產品的編號：B-1014B]所構成者。該黏著劑3是成為藉由100℃以上的加熱處理來硬化之具有熱硬化性的環氧樹脂。
如圖3(a)所示般，使被加工物W的表背反轉，使覆蓋了被加工物W的表面Wa之形成有裝置D的區域之被加工物用保護構件1側與覆蓋了支撐基台10的表面11之支撐基台用保護構件2側對面之後，使被加工物W移動至接近被塗佈於支撐基台10上的黏著劑3的方向。接著，如圖3(b)所示般，從被加工物W的被加工物用保護構件1側推壓至黏著劑3而以黏著劑3來貼附被加工物用保護構件1側與支撐基台用保護構件2側。
在此，藉由將被加工物W推壓至下方，使黏著劑3延伸至徑方向外側，如圖4所示般，使黏著劑3從被加工物用保護構件1的外周部1a與支撐基台用保護構件2的外周側之間擠出至外側，使繞進被加工物W的外周部側面Wc被覆。由於硬化前的黏著劑3是由液狀所成，因此可使藉由被加工物W的推壓來效率佳繞進外周部側面Wc。在此狀態中，例如使用加熱器等的加熱手段來例如100℃以上加熱處理黏著劑3，藉此使黏著劑3硬化。藉由黏著劑3硬化，固定被加工物W與支撐基台10而形成被加工物單元4。被加工物單元4之中，被加工物W的外周部側面Wc是藉由硬化後的黏著劑3來對於支撐基台10牢固地被固定，成為被加工物W的外周部C不易從支撐基台10剝落的狀態。黏著劑3由紫外線硬化樹脂所成時，例如使用UV燈來朝黏著劑3實施藉由紫外線照射之外在的刺激處理，藉此使黏著劑3硬化。
(4)研削步驟 　　實施被加工物單元形成步驟之後，如圖5所示般，以吸盤平台20的保持面21來保持被加工物單元4，藉由被配設於吸盤平台20的上方側的研削手段30來研削被加工物W的背面Wb。 　　研削手段30具備： 　　旋轉軸31，其係具有與保持面21正交的鉛直方向的軸心； 　　研削輪33，其係經由固定台架(mount)32來被安裝於旋轉軸31的下端；及 　　研削砥石34，其係被環狀地固定於研削輪33的下部。 　　研削手段30是連接未圖示的昇降手段，藉由昇降手段，可一邊使研削輪33旋轉，一邊使研削手段30的全體昇降。
研削被加工物W時，以吸盤平台20的保持面21來保持被加工物單元4的支撐基台10側，使被加工物W的背面Wb朝上露出，使吸盤平台20旋轉於例如箭號R方向。接著，研削手段30是一邊使研削輪33例如旋轉於箭號R方向，一邊使以預定的研削進給速度下降，以旋轉的研削砥石34來一邊推壓被加工物W的背面Wb，一邊研削至圖6所示的彎曲可能的厚度T而薄化。本實施形態所示之所謂彎曲可能的厚度T是意思在被加工物W的外周部C產生翹曲的厚度，且預定的完工厚度。作為彎曲可能的厚度T是例如被設定成100μm以下為理想，在本實施形態中，例如被設定成50μm。
被加工物W的研削中，若被加工物W的厚度被薄化成100μm以下，則在被加工物W的外周部C容易發生彎曲至從支撐基台10剝落的方向(上方向)而翹曲，但由於被加工物W的外周部側面Wc會藉由黏著劑3來對於支撐基台10牢固地被固定，因此可抑止外周部C的翹曲的發生，在研削中可抑制外周部C從支撐基台10剝落。然後，在藉由研削動作來將被加工物W薄化成彎曲可能的厚度T的時間點，結束研削步驟。
(5)第1剝離步驟 　　實施研削步驟之後，如圖7所示般，藉由在被黏著於支撐基台10且從被加工物W的外周部側面Wc突出至外側的支撐基台用保護構件2的外周緣部2a例如貼附比支撐基台用保護構件2更黏著力高的剝離膠帶來予以拉起，以將被加工物W、被加工物用保護構件1、黏著劑3及支撐基台用保護構件2設為一體掀起的方式從支撐基台10剝離。藉此，可容易從支撐基台10的表面11剝下支撐基台用保護構件2，舉起被加工物W的外周部C側。然後，從支撐基台10的表面11的全面剝下支撐基台用保護構件2，藉此從支撐基台10完全剝離被加工物W。
(6)第2剝離步驟 　　實施第1剝離步驟後，如圖8所示般，使被加工物W的表背反轉，使被加工物W的表面Wa朝上。第2剝離步驟的剝離的動作是可藉由與第1剝離步驟同樣的動作來進行。亦即，藉由在支撐基台用保護構件2的外周緣部2a例如貼附比被加工物用保護構件1更黏著力高的剝離膠帶來予以拉起，以將被加工物用保護構件1、黏著劑3及支撐基台用保護構件2設為一體掀起的方式從被加工物W的表面Wa剝離。此時，由於在被加工物W的表面Wa是僅只貼附有被加工物用保護構件1，因此可容易藉由剝離膠帶來從被加工物W的表面Wa剝下被加工物用保護構件1。而且，藉由從被加工物W的表面Wa的全面剝下被加工物用保護構件1，可使被加工物W的表面Wa的全面露出。如此一來，可取得加工精度的良好的被加工物W。
如以上般，由於本發明的被加工物的研削方法具備： 　　第1表面保護步驟，其係以被加工物用保護構件1來覆蓋被加工物W的表面Wa之形成有裝置D的區域； 　　第2表面保護步驟，其係以支撐基台用保護構件2來覆蓋支撐基台10的表面11； 　　被加工物單元形成步驟，其係以黏著劑3來貼附覆蓋了被加工物W的表面Wa之形成有裝置D的區域之被加工物用保護構件1側與覆蓋了支撐基台10的表面11之支撐基台用保護構件2側，藉由對於支撐基台10推壓被加工物W，使黏著劑3繞進被加工物W的外周部側面Wc，固定被加工物W的外周部側面Wc而形成被加工物單元4； 　　研削步驟，其係將被加工物W薄化至彎曲可能的厚度T； 　　第1剝離步驟，其係以將薄化後的被加工物W、被加工物用保護構件1、黏著劑3及支撐基台用保護構件2設為一體掀起的方式從支撐基台10剝離；及 　　第2剝離步驟，其係將被加工物用保護構件1、黏著劑3及支撐基台用保護構件2設為一體從被加工物W剝離， 　　因此，被加工物W的研削中，被加工物W的外周部側面Wc會以黏著劑3來牢固地被固定，可抑制被加工物W的外周部C從支撐基台10剝落，可防止在被加工物W發生破裂、缺口、屑等的研削不良。 　　又，本發明是只以黏著劑3固定被加工物W的外周部側面Wc，在支撐基台10的表面11及被加工物W的表面Wa是未接觸黏著劑3，因此在第1剝離步驟中，可容易從支撐基台10剝離支撐基台用保護構件2，在第2剝離步驟中，可容易從被加工物W的表面Wa剝離被加工物用保護構件1。
1‧‧‧被加工物用保護構件2‧‧‧支撐基台用保護構件3‧‧‧黏著劑4‧‧‧被加工物單元10‧‧‧支撐基台11‧‧‧表面20‧‧‧吸盤平台21‧‧‧保持面30‧‧‧研削手段31‧‧‧旋轉軸32‧‧‧固定台架33‧‧‧研削輪34‧‧‧研削砥石
圖1是表示第1表面保護步驟的立體圖。 　　圖2是表示第2表面保護步驟的立體圖。 　　圖3(a)是表示被加工物單元形成步驟的立體圖，(b)是表示被加工物單元的構成的立體圖。 　　圖4是表示被加工物單元的構成的剖面圖。 　　圖5是表示研削步驟的剖面圖。 　　圖6是研削後被薄化的狀態的被加工物單元的部分擴大剖面圖。 　　圖7是表示第1剝離步驟的剖面圖。 　　圖8是表示第2剝離步驟的立體圖。
1‧‧‧被加工物用保護構件
2‧‧‧支撐基台用保護構件
3‧‧‧黏著劑
4‧‧‧被加工物單元
10‧‧‧支撐基台
11‧‧‧表面
Wb‧‧‧背面
Wa‧‧‧表面
Wc‧‧‧外周部側面
W‧‧‧被加工物
C‧‧‧外周部
1a‧‧‧外周部

Claims (5)

  1. 一種被加工物的研削方法，係以研削砥石來研削被加工物的背面之被加工物的研削方法，該被加工物係具有在被形成為格子狀的複數的分割預定線所區劃的各區域形成有裝置的表面，其特徵為具備：第1表面保護步驟，其係以被加工物用保護構件來覆蓋該被加工物的該表面之形成有該裝置的區域；第2表面保護步驟，其係以支撐基台用保護構件來覆蓋支撐基台的表面；及被加工物單元形成步驟，其係以黏著劑來貼附覆蓋了該被加工物的該表面之形成有該裝置的區域之該被加工物用保護構件側與覆蓋了該支撐基台的該表面之該支撐基台保護構件側，藉由將該被加工物推壓至該支撐基台，使該黏著劑繞進該被加工物的外周部側面，固定該外周部側面而形成被加工物單元；研削步驟，其係以吸盤平台的保持面來保持該被加工物單元的該支撐基台，藉由利用與該保持面正交的旋轉軸進行旋轉的研削砥石來研削該被加工物的該背面，將該被加工物薄化至可彎曲的厚度；第1剝離步驟，其係藉由從被加工物的外周部側面突出的該支撐基台用保護構件的外周緣部貼附比該支撐基台用保護構件更黏著力高的剝離膠帶而拉起，以將實施該研削步驟後的該被加工物、該被加工物用保護構件、該 黏著劑及該支撐基台用保護構件設為一體而掀起的方式從該支撐基台剝離；及第2剝離步驟，其係實施該第1剝離步驟後，藉由在該支撐基台用保護構件的該外周緣部貼附比該被加工物用保護構件更黏著力高的剝離膠帶而拉起，將該被加工物用保護構件、該黏著劑及該支撐基台用保護構件設為一體而從該被加工物剝離，以該黏著劑來支撐該被加工物的該外周部側面，而抑制該被加工物的外周部藉由該被加工物的翹曲而從該支撐基台剝落。
  2. 如申請專利範圍第1項之被加工物的研削方法，其中，前述被加工物用保護構件及前述支撐基台用保護構件為黏著膠帶。
  3. 如申請專利範圍第1項之被加工物的研削方法，其中，前述黏著劑係藉由加熱或紫外線照射的處理來硬化的液狀的樹脂。
  4. 如申請專利範圍第1項之被加工物的研削方法，其中，前述被加工物為藍寶石晶圓。
  5. 如申請專利範圍第4項之被加工物的研削方法，其中，實施前述研削步驟後的前述被加工物的厚度為100μm 以下。
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