JP6740542B2 - ウェハ処理方法 - Google Patents
ウェハ処理方法 Download PDFInfo
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- JP6740542B2 JP6740542B2 JP2019098689A JP2019098689A JP6740542B2 JP 6740542 B2 JP6740542 B2 JP 6740542B2 JP 2019098689 A JP2019098689 A JP 2019098689A JP 2019098689 A JP2019098689 A JP 2019098689A JP 6740542 B2 JP6740542 B2 JP 6740542B2
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- 238000010438 heat treatment Methods 0.000 claims description 39
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- 235000012431 wafers Nutrition 0.000 description 638
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- 239000012528 membrane Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000003698 laser cutting Methods 0.000 description 8
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- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 2
- 241001050985 Disco Species 0.000 description 2
- 229910000976 Electrical steel Inorganic materials 0.000 description 2
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- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
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- 238000010030 laminating Methods 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
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- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
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- 238000012805 post-processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/562—Protection against mechanical damage
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Dicing (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Description
Claims (6)
- 複数のデバイス(7)を備えたデバイス領域(2)を一面(1)に有する、ウェハ(W)を処理する方法であって、前記方法は、
保護フィルム(4)を準備するステップと、
液体接着材を準備するステップと、
前記液体接着材を前記保護フィルム(4)および/または前記ウェハ(W)に投与するステップと、
前記ウェハ(W)上の前記デバイスを覆う為に、前記ウェハ(W)の前記一面(1)に前記保護フィルム(4)を加えるステップと、
前記一面(1)の反対側にある前記ウェハ(W)の面(6)を処理するステップと、
を含み、
前記液体接着材は、前記保護フィルム(4)の周辺部分のみ、及び/又は、前記ウェハ(W)の周辺部分のみに投与され、
前記保護フィルムは、前記液体接着材を投与する前に前記ウェハの前記一面に付けられ、前記保護フィルムは、前記保護フィルムを前記ウェハの前記一面に加える間および/または加えた後に前記保護フィルムを加熱することによって、前記ウェハの前記一面に付けられる、方法。 - 前記保護フィルム(4)を前記ウェハ(W)の前記一面(1)に加えるステップの前および/または前記保護フィルム(4)を前記ウェハ(W)の前記一面(1)に加えるステップの後、前記液体接着材が前記保護フィルム(4)及び/又は前記ウェハ(W)に投与される、請求項1に記載の方法。
- 前記液体接着材は前記保護フィルム(4)および/または前記ウェハ(W)に投与され、前記保護フィルム(4)を前記ウェハ(W)の前記一面に加えるステップの後、前記ウェハ(W)の前記デバイス領域(2)には何も接着材が存在しない、請求項1または2に記載の方法。
- クッション層(8)が、前記保護フィルム(4)の裏の面(4b)に付けられる、請求項1〜3のいずれか一項に記載の方法。
- 前記クッション層(8)の裏の面(8b)にベースシート(9)が付けられる、請求項4に記載の方法。
- 前記保護フィルム(4)は、高分子、特に、ポリオレフィンで形成される、請求項5に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102017208405.7 | 2017-05-18 | ||
DE102017208405.7A DE102017208405B4 (de) | 2017-05-18 | 2017-05-18 | Verfahren zum Bearbeiten eines Wafers und Schutzfolie |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018081510A Division JP6888218B2 (ja) | 2017-05-18 | 2018-04-20 | ウェハ処理方法 |
Publications (2)
Publication Number | Publication Date |
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JP2019169727A JP2019169727A (ja) | 2019-10-03 |
JP6740542B2 true JP6740542B2 (ja) | 2020-08-19 |
Family
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JP2018081510A Active JP6888218B2 (ja) | 2017-05-18 | 2018-04-20 | ウェハ処理方法 |
JP2019098689A Active JP6740542B2 (ja) | 2017-05-18 | 2019-05-27 | ウェハ処理方法 |
JP2020042019A Pending JP2020113778A (ja) | 2017-05-18 | 2020-03-11 | ウェハ処理方法 |
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JP2018081510A Active JP6888218B2 (ja) | 2017-05-18 | 2018-04-20 | ウェハ処理方法 |
Family Applications After (1)
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JP2020042019A Pending JP2020113778A (ja) | 2017-05-18 | 2020-03-11 | ウェハ処理方法 |
Country Status (7)
Country | Link |
---|---|
US (2) | US11637074B2 (ja) |
JP (3) | JP6888218B2 (ja) |
KR (1) | KR102105114B1 (ja) |
CN (1) | CN108933098A (ja) |
DE (1) | DE102017208405B4 (ja) |
SG (1) | SG10201803494SA (ja) |
TW (1) | TWI683392B (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102345923B1 (ko) * | 2017-05-18 | 2022-01-03 | 가부시기가이샤 디스코 | 웨이퍼를 프로세싱하는데 사용하기 위한 보호 시팅, 웨이퍼에 대한 핸들링 시스템, 및 웨이퍼 및 보호 시팅의 조합체 |
KR20210128388A (ko) | 2019-02-26 | 2021-10-26 | 가부시기가이샤 디스코 | 이면 연삭용 점착 시트 및 반도체 웨이퍼의 제조 방법 |
US20220148905A1 (en) * | 2019-02-26 | 2022-05-12 | Disco Corporation | Back grinding adhesive sheet, and method for manufacturing semiconductor wafer |
JP7333192B2 (ja) * | 2019-04-23 | 2023-08-24 | 株式会社ディスコ | 移設方法 |
DE102019211540A1 (de) * | 2019-08-01 | 2021-02-04 | Disco Corporation | Verfahren zum bearbeiten eines substrats |
JP7430515B2 (ja) * | 2019-11-06 | 2024-02-13 | 株式会社ディスコ | ウエーハの処理方法 |
JP7455470B2 (ja) | 2020-03-13 | 2024-03-26 | 株式会社ディスコ | ウェーハの加工方法 |
JP2021190611A (ja) | 2020-06-02 | 2021-12-13 | 株式会社ディスコ | ウェーハの加工方法、保護部材貼着装置、及び、加工装置 |
JP2022041447A (ja) | 2020-09-01 | 2022-03-11 | 株式会社ディスコ | ウェーハの加工方法 |
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JP2024079914A (ja) | 2022-12-01 | 2024-06-13 | 株式会社ディスコ | 樹脂シート |
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JP6888218B2 (ja) | 2021-06-16 |
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