SG10201803494SA - Method of Processing Wafer - Google Patents

Method of Processing Wafer

Info

Publication number
SG10201803494SA
SG10201803494SA SG10201803494SA SG10201803494SA SG10201803494SA SG 10201803494S A SG10201803494S A SG 10201803494SA SG 10201803494S A SG10201803494S A SG 10201803494SA SG 10201803494S A SG10201803494S A SG 10201803494SA SG 10201803494S A SG10201803494S A SG 10201803494SA
Authority
SG
Singapore
Prior art keywords
wafer
protective film
processing
processing wafer
onto
Prior art date
Application number
SG10201803494SA
Inventor
Karl Heinz Priewasser
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of SG10201803494SA publication Critical patent/SG10201803494SA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/562—Protection against mechanical damage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Dicing (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)

Abstract

Method of Processing Wafer The invention relates to a method of processing a wafer (W), having on one side (1) a device area (2) with a plurality of devices (7). The method comprises providing a protective film (4) and applying the protective film (4), for covering the devices (7) on the wafer (W), to the one side (1) of the wafer (W), so that a front surface (4a) of the protective film (4) is in direct contact with the one side (1) of the wafer (W). The method further comprises heating the protective film (4) during and/or after applying the protective film (4) to the one side (1) of the wafer (W), so that the protective film (4) is attached to the one side (1) of the wafer (W), and processing the side (6) of the wafer (W) being opposite to the one side (1). Further, the invention relates to a method of processing such a wafer (W) in which a liquid adhesive is dispensed only onto a peripheral portion of a protective film (4) and/or only onto a peripheral portion of the wafer (W). [Fig. 4]
SG10201803494SA 2017-05-18 2018-04-26 Method of Processing Wafer SG10201803494SA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102017208405.7A DE102017208405B4 (en) 2017-05-18 2017-05-18 Method for processing a wafer and protective film

Publications (1)

Publication Number Publication Date
SG10201803494SA true SG10201803494SA (en) 2018-12-28

Family

ID=64272078

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201803494SA SG10201803494SA (en) 2017-05-18 2018-04-26 Method of Processing Wafer

Country Status (7)

Country Link
US (2) US11637074B2 (en)
JP (3) JP6888218B2 (en)
KR (1) KR102105114B1 (en)
CN (1) CN108933098A (en)
DE (1) DE102017208405B4 (en)
SG (1) SG10201803494SA (en)
TW (1) TWI683392B (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6940217B2 (en) * 2017-05-18 2021-09-22 株式会社ディスコ Protective seating, wafer, wafer and protective seating combination handling system for use in wafer processing
KR20210128388A (en) * 2019-02-26 2021-10-26 가부시기가이샤 디스코 Adhesive sheet for backside grinding and manufacturing method of semiconductor wafer
DE112020000935T5 (en) * 2019-02-26 2021-11-04 Denka Company Limited Adhesive film for back grinding and method for manufacturing semiconductor wafers
JP7333192B2 (en) * 2019-04-23 2023-08-24 株式会社ディスコ Relocation method
DE102019211540A1 (en) * 2019-08-01 2021-02-04 Disco Corporation METHOD OF EDITING A SUBSTRATE
JP7430515B2 (en) 2019-11-06 2024-02-13 株式会社ディスコ Wafer processing method
JP7455470B2 (en) 2020-03-13 2024-03-26 株式会社ディスコ Wafer processing method
JP2021190611A (en) * 2020-06-02 2021-12-13 株式会社ディスコ Wafer processing method, protective member sticking device, and processing device
JP2022041447A (en) 2020-09-01 2022-03-11 株式会社ディスコ Wafer processing method
CN112157580A (en) * 2020-09-26 2021-01-01 绍兴自远磨具有限公司 Silicon wafer grinding disc and preparation method and application thereof
US11587809B2 (en) * 2020-09-30 2023-02-21 Advanced Semiconductor Engineering, Inc. Wafer supporting mechanism and method for wafer dicing

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57173135A (en) * 1981-04-17 1982-10-25 Toshio Kunugi Manufacture of super-strong film
JPS58153352A (en) 1982-03-09 1983-09-12 Toshiba Corp Manufacture of semiconductor device
JP2000100558A (en) * 1998-09-18 2000-04-07 Matsushita Electric Ind Co Ltd Luminescent device
JP4780828B2 (en) * 2000-11-22 2011-09-28 三井化学株式会社 Adhesive tape for wafer processing, method for producing the same and method for using the same
JP2002203821A (en) 2000-12-28 2002-07-19 Mitsubishi Gas Chem Co Inc Adhering and peeling method
JP2003037155A (en) * 2001-07-25 2003-02-07 Mitsubishi Gas Chem Co Inc Method for manufacturing thinned wafer
DE10121556A1 (en) * 2001-05-03 2002-11-14 Infineon Technologies Ag Process for back grinding of wafers
US6777267B2 (en) * 2002-11-01 2004-08-17 Agilent Technologies, Inc. Die singulation using deep silicon etching
JP2005191297A (en) 2003-12-25 2005-07-14 Jsr Corp Dicing film and cutting method of semiconductor wafer
JP2005191296A (en) 2003-12-25 2005-07-14 Jsr Corp Back grind tape, and method for polishing semiconductor wafer
US20050244631A1 (en) * 2004-04-28 2005-11-03 Mitsui Chemicals, Inc. Surface protecting film for semiconductor wafer and method of protecting semiconductor wafer using the same
JP2006210401A (en) * 2005-01-25 2006-08-10 Disco Abrasive Syst Ltd Method for dividing wafer
JP4930679B2 (en) 2005-12-14 2012-05-16 日本ゼオン株式会社 Manufacturing method of semiconductor device
JP5151104B2 (en) 2006-09-22 2013-02-27 パナソニック株式会社 Manufacturing method of electronic parts
JP5064985B2 (en) * 2006-12-05 2012-10-31 古河電気工業株式会社 Semiconductor wafer processing method
TWI324802B (en) * 2007-02-16 2010-05-11 Advanced Semiconductor Eng Method of thinning wafer
JP4934620B2 (en) 2008-03-25 2012-05-16 古河電気工業株式会社 Wafer processing tape
JP2010027685A (en) 2008-07-15 2010-02-04 Lintec Corp Method for grinding semiconductor wafer
JP2011054827A (en) 2009-09-03 2011-03-17 Fujitsu Semiconductor Ltd Method for manufacturing semiconductor device and surface protective tape
US8252665B2 (en) * 2009-09-14 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Protection layer for adhesive material at wafer edge
JP5545640B2 (en) * 2010-05-11 2014-07-09 株式会社ディスコ Grinding method
KR20120023258A (en) 2010-09-01 2012-03-13 주식회사 이오테크닉스 Wafer processing method and wafer processing apparatus
US9190388B2 (en) * 2011-12-19 2015-11-17 Intel Corporation Using an optically transparent solid material as a support structure for attachment of a semiconductor material to a substrate
JP6009217B2 (en) 2012-05-18 2016-10-19 株式会社ディスコ Method of sticking protective member
JP6061590B2 (en) * 2012-09-27 2017-01-18 株式会社ディスコ Surface protection member and processing method
KR102061695B1 (en) * 2012-10-17 2020-01-02 삼성전자주식회사 Wafer processing method
JP6004100B2 (en) * 2013-05-24 2016-10-05 富士電機株式会社 Manufacturing method of semiconductor device
JP5666659B2 (en) * 2013-07-17 2015-02-12 リンテック株式会社 Wafer processing sheet
US9184083B2 (en) * 2013-07-29 2015-11-10 3M Innovative Properties Company Apparatus, hybrid laminated body, method and materials for temporary substrate support
WO2015016064A1 (en) * 2013-08-01 2015-02-05 リンテック株式会社 Protective film formation-use composite sheet
JP2016001677A (en) * 2014-06-12 2016-01-07 株式会社ディスコ Wafer processing method
US9786643B2 (en) * 2014-07-08 2017-10-10 Micron Technology, Inc. Semiconductor devices comprising protected side surfaces and related methods
DE112015006857B4 (en) 2015-08-31 2023-10-05 Disco Corporation Method for processing a wafer and protective cover for use in this method
DE102015216619B4 (en) * 2015-08-31 2017-08-10 Disco Corporation Method for processing a wafer
DE102018200656A1 (en) * 2018-01-16 2019-07-18 Disco Corporation Method for processing a wafer
DE102018202254A1 (en) * 2018-02-14 2019-08-14 Disco Corporation Method for processing a wafer

Also Published As

Publication number Publication date
US20180337141A1 (en) 2018-11-22
JP6740542B2 (en) 2020-08-19
JP6888218B2 (en) 2021-06-16
JP2019169727A (en) 2019-10-03
DE102017208405A1 (en) 2018-11-22
JP2020113778A (en) 2020-07-27
US20210151390A1 (en) 2021-05-20
CN108933098A (en) 2018-12-04
JP2018195805A (en) 2018-12-06
KR102105114B1 (en) 2020-04-27
KR20180127230A (en) 2018-11-28
TW201909333A (en) 2019-03-01
US11637074B2 (en) 2023-04-25
TWI683392B (en) 2020-01-21
US11784138B2 (en) 2023-10-10
DE102017208405B4 (en) 2024-05-02

Similar Documents

Publication Publication Date Title
SG10201803494SA (en) Method of Processing Wafer
SG10201900223QA (en) Method of Processing a Wafer
SG10201900566PA (en) Method of processing a wafer
SG11202012953VA (en) Pressure-sensitive adhesive layer for flexible image display devices, laminate for flexible image display devices, and flexible image display device
PH12018500670A1 (en) Sheet for semiconductor processing
EP3751336A4 (en) Display substrate and display device
EP3764398A4 (en) Display substrate and display device
MX2017006684A (en) Display part protector for a smart device and method of adhering the display part protector to the surface using the device.
WO2018002035A3 (en) Method of processing wafer having protrusions on the back side
EP3335804A3 (en) Device and method for coating material with resin and subsequently laying the material saturated with the resin onto a surface
MY193967A (en) An article for use with an apparatus for heating an aerosol generating agent
EP3879578A4 (en) Display substrate and display device
SG11201902647VA (en) Thin film affixing device
MX2019002754A (en) Method and system for hydrophobic coating of microfluidic chips.
EP3872840A4 (en) Substrate processing device and substrate processing method
GB2596726B (en) Surface type detection and surface treatment apparatus using the same
EP3857113A4 (en) Liquid vaporization device and method
EP3779942A4 (en) Display substrate and detection method thereof, and display device
EP3812930A4 (en) Distributed transaction processing method and related device
GB202202358D0 (en) Device and method for applying nanofibers and/or microfibers onto a substrate and system comprising the devices
EP3663894A4 (en) Device and method for simulating and transmittng contact exteroceptive sensations
EP3733575A4 (en) Substrate processing device and substrate processing method
EP3675629A4 (en) Device and method for delivering steam onto and beneath a field surface
SG11202108805PA (en) Advertisement contact determination system, advertisement contact determination device, and program
EP3545902A4 (en) Intraoral device for creating a sensation of contact, method for applying an intraoral device, and method for determining the thickness of an intraoral device