CN112157580A - Silicon wafer grinding disc and preparation method and application thereof - Google Patents
Silicon wafer grinding disc and preparation method and application thereof Download PDFInfo
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- CN112157580A CN112157580A CN202011028050.2A CN202011028050A CN112157580A CN 112157580 A CN112157580 A CN 112157580A CN 202011028050 A CN202011028050 A CN 202011028050A CN 112157580 A CN112157580 A CN 112157580A
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- Prior art keywords
- grinding
- silicon wafer
- grinding disc
- disc
- diamond
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/12—Lapping plates for working plane surfaces
- B24B37/16—Lapping plates for working plane surfaces characterised by the shape of the lapping plate surface, e.g. grooved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
- B24D18/009—Tools not otherwise provided for
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention discloses a silicon wafer grinding disc and a preparation method and application thereof, the silicon wafer grinding disc comprises a substrate and a grinding layer attached to the surface of the substrate, the grinding layer comprises a plurality of grinding sheets uniformly distributed on the surface of the substrate, chip grooves are formed between adjacent grinding sheets, the top surfaces of the grinding sheets jointly form a working surface for grinding, the chip grooves are mutually communicated to form chip removal channels for chip removal, grinding traces are uniform, the surface shape precision of a workpiece is high, the removal effect is good, chip removal is timely, the continuous grinding capacity of the silicon wafer grinding disc is effectively guaranteed, the consistency is good, and the preparation method of the silicon wafer grinding disc comprises the following steps: the silicon wafer grinding disc has the advantages of high preparation efficiency, high quality of formed grinding products, good treatment effect and capability of being used for surface treatment of high-hardness semiconductor silicon wafers, glass, sapphire and ceramics, and meets the requirements of mass production.
Description
Technical Field
The invention relates to the technical field of material processing, in particular to a silicon wafer grinding disc and a preparation method and application thereof.
Background
With the rapid development of semiconductor devices, the requirements for monocrystalline silicon wafers are increasing. Since the main surface of the wafer is a surface on which a pattern of a device is drawn, it is necessary to avoid scratches and contamination of the main surface of the wafer as much as possible. Trace impurity elements introduced between elements in the whole production process of the silicon wafer may reduce the qualification rate of the chip. As a raw material of a semiconductor device, metal ions on a silicon surface directly affect the yield of device processing.
The purpose of grinding a semiconductor silicon wafer is to remove a surface mechanical stress damage layer generated by cutting the surface of the silicon wafer and impurity contamination such as various metal ions on the surface in a slicing process, and to make the silicon wafer have a flat surface with a certain geometric dimensional accuracy. The semiconductor silicon wafer has higher hardness, so that the surface grinding treatment needs to be carried out through a special silicon wafer grinding disc, and a foundation is laid for the subsequent polishing treatment.
At present, abrasive particles on the surface of an existing silicon wafer grinding disc are distributed unevenly, grinding traces are disordered, the surface shape precision of a semiconductor silicon wafer is low, the consistency is poor, the grinding efficiency is low, the continuous grinding effect is poor, and the silicon wafer grinding disc cannot be suitable for grinding of the semiconductor silicon wafer.
Therefore, a new solution is needed to solve this problem.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide a silicon wafer grinding disc, a preparation method and application thereof, wherein the grinding disc has the advantages of high grinding surface precision, good consistency and high grinding efficiency, and can be used for surface treatment of high-hardness semiconductor silicon wafers, glass, sapphire and ceramics.
The technical purpose of the invention is realized by the following technical scheme: the utility model provides a silicon chip abrasive disc, includes the substrate and attaches to the wearing layer on substrate surface, the wearing layer includes a plurality of even abrasive sheets of arranging on substrate surface, and is adjacent be formed with the chip groove between the abrasive sheet, the top surface of abrasive sheet is formed with the working face that is used for grinding jointly, the chip groove communicates each other and is formed with the chip removal passageway that is used for the chip removal.
By adopting the technical scheme: because there is the grinding layer attached to the substrate surface, the grinding layer includes a plurality of abrasive sheets, the working face that is used for grinding is formed with jointly at the top surface of abrasive sheet, the orbit can be followed, it is comparatively even to grind the vestige, work piece shape of face precision is high, it is effectual to get rid of, and be formed with the chip groove between adjacent abrasive sheet, the chip groove communicates each other and is formed with the chip removal passageway that is used for the chip removal, can in time chip removal, thereby can avoid being used for the working face of grinding to block up, make the working face that is used for grinding level and smooth even, can not cause the influence to the use of silicon chip abrasive disc, thereby effectively guaranteed the continuous grinding ability of silicon chip abrasive disc, and the.
The invention is further configured to: the base material is made of PET material.
By adopting the technical scheme: because the base material is made of PET material, the strength and hardness are higher, thereby effectively ensuring the rigidity of the silicon wafer grinding disc.
The invention is further configured to: the grinding sheet is square.
By adopting the technical scheme: because the grinding sheet is square, the peeling rate is high, and the grinding effect is good.
The invention also provides a preparation method of the silicon wafer grinding disc, which comprises the following steps:
1) pretreatment: uniformly mixing the diamond micro powder, the needle-shaped wollastonite and the UV resin liquid to obtain a diamond dispersion liquid;
2) pre-curing treatment: coating a release agent on a die with a square groove, pouring the diamond dispersion liquid treated in the step 1) into the die, uniformly coating the diamond dispersion liquid to ensure that the diamond dispersion liquid uniformly covers the inside of the die, and covering a substrate in the die for pre-curing treatment to ensure that the diamond is combined with the substrate;
3) curing and forming: and (3) demolding the blank treated in the step 2) and carrying out curing treatment to obtain the formed silicon wafer grinding disc.
By adopting the technical scheme, the preparation method has good continuity and high preparation efficiency, meets the requirement of mass production, and the formed grinding product has high quality.
The invention is further configured to: the grain size of the diamond in the step 2) is 6-35 microns.
By adopting the technical scheme, the diamond has the grain diameter of 6-35 microns and is larger, so that the roughness value of the surface of the ground workpiece is larger, and the grinding capacity of the silicon wafer grinding disc is effectively ensured.
The invention is further configured to: the mass ratio of the diamond micro powder to the UV resin liquid in the step 1) is 1: 9.
By adopting the technical scheme, the silicon wafer grinding disc has higher strength and longer service life because the mass ratio of the diamond micro powder to the UV resin liquid is 1:9 and the proportion is uniform.
The invention also provides the application of the silicon wafer grinding disc, the silicon wafer grinding disc is used for surface treatment of the high-hardness semiconductor silicon wafer, the grinding pieces are uniformly distributed and have a balanced acting force with the surface of the semiconductor silicon wafer, so that the ground semiconductor silicon wafer has better surface quality, and the silicon wafer grinding disc is stable in structure, high in grinding efficiency, strong in continuous grinding capacity and good in consistency.
The silicon wafer grinding disc is further used for surface treatment of glass, sapphire and ceramic, can replace grinding fluid, and has good environmental protection performance.
In conclusion, the invention has the following beneficial effects:
1. the silicon wafer grinding disc comprises a base material and a grinding layer, wherein the grinding layer comprises a plurality of grinding sheets, working surfaces for grinding are formed on the top surfaces of the grinding sheets together, tracks can be circulated, grinding traces are uniform, the surface shape precision of a workpiece is high, the removing effect is good, chip grooves are formed between the adjacent grinding sheets and communicated with each other to form chip removal channels for chip removal, and the chips can be removed timely, so that the blockage of the working surfaces for grinding can be avoided, the working surfaces for grinding are flat and uniform, the use of the silicon wafer grinding disc cannot be influenced, the continuous grinding capacity of the silicon wafer grinding disc is effectively guaranteed, and the consistency is good;
2. the preparation method of the silicon wafer grinding disc has good continuity and high preparation efficiency, meets the requirement of mass production, and has high quality of the formed ground product;
3. the silicon wafer grinding disc disclosed by the invention can be used for surface treatment of high-hardness semiconductor silicon wafers, so that the ground semiconductor silicon wafers have better surface quality, and the silicon wafer grinding disc is stable in structure, high in grinding efficiency, strong in continuous grinding capacity and good in consistency, can be used for surface treatment of glass, sapphire and ceramics, can replace grinding fluid, and has better environmental friendliness.
Detailed Description
The present invention will be described in detail with reference to examples.
The utility model provides a silicon chip abrasive disc, includes the substrate and attaches to the grinding layer on substrate surface, and the substrate adopts the PET material to make, and the grinding layer includes a plurality of even abrasive sheets of arranging on substrate surface, and the shape of abrasive sheet is square slice, is formed with the chip groove between adjacent abrasive sheet, and is formed with the working face that is used for grinding jointly at the top surface of abrasive sheet, and the chip groove communicates each other and is formed with the chip removal passageway that is used for the chip removal, and the chip removal passageway is latticed.
Because the substrate is made of PET material, the strength and hardness are high, the grinding layer can be well supported, the silicon wafer grinding disc is not easy to deform, the rigidity of the silicon wafer grinding disc is effectively ensured, the grinding layer is attached to the surface of the substrate and comprises a plurality of grinding sheets, the grinding sheets are square, the peeling rate is high, the grinding effect is good, the grinding sheets are uniformly distributed on the surface of the substrate, working surfaces for grinding are formed on the top surfaces of the grinding sheets together, tracks can be circulated, grinding traces are uniform when the grinding sheets are in contact with a workpiece and are ground, the surface shape precision of the workpiece is high, the removing effect is good, chip discharge grooves are formed between adjacent grinding sheets and are communicated with each other to form chip discharge channels for discharging chips, the chip discharge channels are grid-shaped, when the workpiece generates chips due to grinding, the existence of the chip discharge channels, the chips can be smoothly discharged into the chip discharge channels from the two sides of the grinding sheets, thereby can avoid being used for the working face of grinding to block up for the working face for grinding levels evenly, can not lead to the fact the influence to the use of silicon chip abrasive disc, thereby has effectively guaranteed the continuous grinding ability of silicon chip abrasive disc, and the uniformity is better.
A preparation method of a silicon wafer grinding disc comprises the following steps:
1) pretreatment: uniformly mixing diamond micro powder, needle-shaped wollastonite and UV resin liquid to obtain diamond dispersion liquid, wherein the mass ratio of the diamond micro powder to the UV resin liquid is 1:9, and the diamond micro powder and the UV resin liquid are uniformly mixed, so that the silicon wafer grinding disc has higher strength and longer service life, and the needle-shaped wollastonite is 2000-mesh needle-shaped wollastonite;
2) pre-curing treatment: coating a release agent on a die with a square groove, wherein the groove depth of the square groove is 350 microns, pouring the diamond dispersion liquid treated in the step 1) into the die and uniformly coating the diamond dispersion liquid to enable the diamond dispersion liquid to uniformly cover the inside of the die, covering a substrate in the die for pre-curing treatment to enable the diamond to be combined with the substrate, and the particle size of the diamond is 6-35 microns and larger, so that the roughness value of the surface of a ground workpiece is larger, and the grinding capacity of a silicon wafer grinding disc is effectively ensured;
3) curing and forming: and (3) demolding the blank treated in the step 2) and carrying out curing treatment to obtain the formed silicon wafer grinding disc.
The preparation method of the silicon wafer grinding disc has the advantages that the preparation process comprises the preparation processes of pretreatment, pre-curing treatment and curing forming, the process is simple, workers use the mold and the release agent in the process, the continuity of the preparation process is good, the preparation efficiency is high, the requirement of mass production is met, the quality of the formed grinding product is high, the diamond and the base material are firmly combined, the structure is stable, the grinding effect is good, and the service life is long.
The silicon wafer grinding disc is used for surface treatment of high-hardness semiconductor silicon wafers.
The silicon wafer grinding disc is used for processing high-hardness semiconductor silicon wafers on a grinding machine tool, the grinding machine tool is a double-sided planetary grinding machine tool which is manufactured by the German Peter Wo l ter company and is AC 700-F in model number, a planetary wheel is positioned between a sun wheel and an outer gear ring during grinding, the planetary wheel rotates around the center of the planetary wheel under the driving of the planetary wheel and revolves around the center of the sun wheel along with the planetary wheel, the processing pressure is provided by an upper disc, the semiconductor silicon wafers are pressed and combined with the upper disc and the lower disc during grinding, the grinding processing of the semiconductor silicon wafers can be realized through relative motion, the grinding pressure is kept at 12.5Kpa, the duration is 30 minutes, and the surface processing of the high-hardness semiconductor silicon wafers is completed.
Because the grinding sheet is uniformly distributed, the movement track is controllable, the force is uniformly applied when the grinding sheet is contacted with the surface of the semiconductor silicon wafer and interacts with the surface of the semiconductor silicon wafer, the acting force on the surface of the semiconductor silicon wafer is balanced, the situation that the grinding is too deep or too shallow is avoided, and uniform grinding traces are ensured, so that the ground semiconductor silicon wafer has better surface quality, and the silicon wafer grinding disc firmly combines diamond and a base material, the structure is stable, the grinding efficiency is high, the continuous grinding capacity is strong, and the consistency is good.
For the purpose of silicon wafer polishing disks, silicon wafer polishing disks are also used for surface treatment of glass, sapphire and ceramics.
The silicon wafer grinding disc formed by combining the diamond and the base material is used for surface treatment of glass, sapphire and ceramics, can replace grinding fluid, saves energy and reduces pollution, and therefore has good environmental protection property and high environmental friendliness.
The above description is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above embodiments, and all technical solutions belonging to the idea of the present invention belong to the protection scope of the present invention. It should be noted that modifications and embellishments within the scope of the invention may occur to those skilled in the art without departing from the principle of the invention, and are considered to be within the scope of the invention.
Claims (8)
1. The utility model provides a silicon chip abrasive disc, includes substrate and attached to the grinding layer on substrate surface which characterized in that: the grinding layer includes a plurality of grinding pieces of evenly arranging on the substrate surface, and is adjacent be formed with the chip groove between the grinding piece, the top surface of grinding piece is formed with the working face that is used for grinding jointly, the chip groove communicates each other and is formed with the chip removal passageway that is used for the chip removal.
2. The silicon wafer grinding disc as set forth in claim 1, wherein: the base material is made of PET material.
3. The silicon wafer grinding disc as set forth in claim 1, wherein: the grinding sheet is square.
4. A method for producing the silicon wafer polishing pad according to any one of claims 1 to 3, characterized in that: the method comprises the following steps:
1) pretreatment: uniformly mixing the diamond micro powder, the needle-shaped wollastonite and the UV resin liquid to obtain a diamond dispersion liquid;
2) pre-curing treatment: coating a release agent on a die with a square groove, pouring the diamond dispersion liquid treated in the step 1) into the die, uniformly coating the diamond dispersion liquid to ensure that the diamond dispersion liquid uniformly covers the inside of the die, and covering a substrate in the die for pre-curing treatment to ensure that the diamond is combined with the substrate;
3) curing and forming: and (3) demolding the blank treated in the step 2) and carrying out curing treatment to obtain the formed silicon wafer grinding disc.
5. The method for preparing the silicon wafer grinding disc according to claim 4, wherein the method comprises the following steps: the grain size of the diamond in the step 2) is 6-35 microns.
6. The method for preparing the silicon wafer grinding disc according to claim 4, wherein the method comprises the following steps: the mass ratio of the diamond micro powder to the UV resin liquid in the step 1) is 1: 9.
7. Use of the silicon wafer polishing disk according to any one of claims 1 to 3, characterized in that: the silicon wafer grinding disc is used for surface treatment of a high-hardness semiconductor silicon wafer, the grinding pieces are uniformly distributed and balanced with the acting force on the surface of the semiconductor silicon wafer, so that the ground semiconductor silicon wafer has better surface quality, and the silicon wafer grinding disc is stable in structure, high in grinding efficiency, strong in continuous grinding capacity and good in consistency.
8. Use of the silicon wafer lapping disk of claim 7, wherein: the silicon wafer grinding disc is also used for surface treatment of glass, sapphire and ceramics, can replace grinding fluid and has better environmental protection property.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011028050.2A CN112157580A (en) | 2020-09-26 | 2020-09-26 | Silicon wafer grinding disc and preparation method and application thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011028050.2A CN112157580A (en) | 2020-09-26 | 2020-09-26 | Silicon wafer grinding disc and preparation method and application thereof |
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| Publication Number | Publication Date |
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| CN112157580A true CN112157580A (en) | 2021-01-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202011028050.2A Pending CN112157580A (en) | 2020-09-26 | 2020-09-26 | Silicon wafer grinding disc and preparation method and application thereof |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009158536A (en) * | 2007-12-25 | 2009-07-16 | Disco Abrasive Syst Ltd | Method of processing wafer |
| CN104261726A (en) * | 2014-09-18 | 2015-01-07 | 蓝思科技股份有限公司 | Grinding pad special for double-sided finishing of optical glass and preparation method of grinding pad |
| CN104772693A (en) * | 2015-04-20 | 2015-07-15 | 蓝思科技（长沙）有限公司 | Diamond grinding pad for processing super-hard ceramics and preparation method for diamond grinding pad |
| CN107584434A (en) * | 2017-11-03 | 2018-01-16 | 绍兴自远磨具有限公司 | Pad and its manufacture method is thinned in a kind of diamond |
| CN108933098A (en) * | 2017-05-18 | 2018-12-04 | 株式会社迪思科 | The method for handling wafer |
| CN109048645A (en) * | 2018-08-08 | 2018-12-21 | 华侨大学 | A kind of semi-consolidated abrasive disk and its preparation method and application for semiconductor substrate grinding |
| TW201936883A (en) * | 2018-02-20 | 2019-09-16 | 美商英吉斯公司 | Fixed abrasive three-dimensional lapping and polishing plate and methods of making and using the same |
-
2020
- 2020-09-26 CN CN202011028050.2A patent/CN112157580A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009158536A (en) * | 2007-12-25 | 2009-07-16 | Disco Abrasive Syst Ltd | Method of processing wafer |
| CN104261726A (en) * | 2014-09-18 | 2015-01-07 | 蓝思科技股份有限公司 | Grinding pad special for double-sided finishing of optical glass and preparation method of grinding pad |
| CN104772693A (en) * | 2015-04-20 | 2015-07-15 | 蓝思科技（长沙）有限公司 | Diamond grinding pad for processing super-hard ceramics and preparation method for diamond grinding pad |
| CN108933098A (en) * | 2017-05-18 | 2018-12-04 | 株式会社迪思科 | The method for handling wafer |
| CN107584434A (en) * | 2017-11-03 | 2018-01-16 | 绍兴自远磨具有限公司 | Pad and its manufacture method is thinned in a kind of diamond |
| TW201936883A (en) * | 2018-02-20 | 2019-09-16 | 美商英吉斯公司 | Fixed abrasive three-dimensional lapping and polishing plate and methods of making and using the same |
| CN109048645A (en) * | 2018-08-08 | 2018-12-21 | 华侨大学 | A kind of semi-consolidated abrasive disk and its preparation method and application for semiconductor substrate grinding |
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Application publication date: 20210101 |
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