CN1515025A - 半导体片的分割方法 - Google Patents
半导体片的分割方法 Download PDFInfo
- Publication number
- CN1515025A CN1515025A CNA038003813A CN03800381A CN1515025A CN 1515025 A CN1515025 A CN 1515025A CN A038003813 A CNA038003813 A CN A038003813A CN 03800381 A CN03800381 A CN 03800381A CN 1515025 A CN1515025 A CN 1515025A
- Authority
- CN
- China
- Prior art keywords
- semiconductor chip
- straight way
- covering member
- remove
- semiconductor wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 129
- 238000000034 method Methods 0.000 title claims description 49
- 239000011229 interlayer Substances 0.000 claims abstract description 11
- 238000005520 cutting process Methods 0.000 claims description 41
- 238000003486 chemical etching Methods 0.000 claims description 24
- 239000010410 layer Substances 0.000 claims description 8
- 230000001678 irradiating effect Effects 0.000 claims description 7
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 abstract description 12
- 230000000873 masking effect Effects 0.000 abstract 2
- 238000005530 etching Methods 0.000 description 16
- 238000010586 diagram Methods 0.000 description 12
- 239000002390 adhesive tape Substances 0.000 description 9
- 230000002950 deficient Effects 0.000 description 8
- 238000001312 dry etching Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 238000001816 cooling Methods 0.000 description 4
- 239000010445 mica Substances 0.000 description 4
- 229910052618 mica group Inorganic materials 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical class F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0064—Devices for the automatic drive or the program control of the machines
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Dicing (AREA)
- Laser Beam Processing (AREA)
- Weting (AREA)
Abstract
一种半导体片的分割方法,当把在由直道划分的多个区域中形成有电路的半导体片分割成各个电路的半导体芯片时,至少用遮盖构件15覆盖半导体片W的电路面,通过激光光线的照射来除去覆盖着直道S的上部的遮盖构件15,对除去覆盖直道S的上部的遮盖构件15的半导体片W进行化学蚀刻,侵蚀直道,分割成各个半导体芯片C。因为不需要光掩膜或曝光装置,所以经济并且简便,因为不用切削半导体片,所以能形成没有缺陷或剥落的半导体片芯片。
Description
技术领域
本发明涉及通过化学蚀刻处理分割半导体片来作为各芯片的半导体片分割方法。
背景技术
图10所示的半导体片W通过胶带T与框F成为一体。在半导体片W的表面上,直道S隔开一定间隔排列成格子状,在由直道S划分的多个矩形区域中形成电路。而且,通过使用旋转刀切削直道S而形成各半导体芯片
但是,在利用旋转刀进行的切削中存在以下问题:有时在半导体芯片的外周产生细小的缺陷或应力,由于该缺陷或应力而导致抗折强度下降,由于外力或加热周期而使半导体芯片容易破损,寿命缩短。例如在厚度50μm以下的半导体芯片中,所述缺陷或应力就成为致命的问题。
因此,正在研究不使用旋转刀,而通过化学蚀刻处理来分割半导体片的方法。该方法首先在形成了电路的半导体片W的表面上形成光致抗蚀剂膜,使用光掩膜仅使直道的上部曝光,除去因曝光而变质的光致抗蚀剂膜后,通过蚀刻对直道进行侵蚀来分割成各个半导体片。
但是,在上述方法中,为了仅使覆盖直道的上部的光致抗蚀剂膜曝光,必须准备多种与半导体片W的大小以及直道间隔单独对应的光掩膜,所以存在着经济上不合算并且管理繁琐这样的问题。
另外,还存在以下问题:因为需要使形成在半导体片W的表面的直道S和与它对应形成在光掩模上的对应部分进行精密位置对位来进行曝光的曝光装置和用于除去因曝光而变质的胶带构件的除去装置,所以会导致设备投资的增大。
而且,当使用靠蚀刻处理无法除去的材料在半导体片W的直道S上形成了对齐标记等图案时,存在着实质上无法分割半导体片W这样的问题。
为了解决这样的问题,例如特开2001-127011号公报所公开的发明那样,提出了由光致抗蚀剂膜覆盖半导体片的整个电路面,使用旋转刀用机械方法除去覆盖直道的上部的光致抗蚀剂膜,然后用化学方法蚀刻、分割成各个半导体芯片的方法。
但是,利用该方法时,在除去直道的上部的光致抗蚀剂膜时,有时旋转刀也会切入半导体片,以至在半导体片中产生缺陷,导致抗折强度下降。特别是,当为在硅片上层叠了多个极薄的层间绝缘膜(低介电常数绝缘膜)的多层构造的半导体片时,如果旋转刀的切入量哪怕稍微大一点,也有可能会使旋转刀切入绝缘膜中,使绝缘膜象云母那样剥落。
发明内容
因此,本发明的目的在于:在通过化学蚀刻处理来分割半导体片时,用经济效益好的方法来形成没有缺陷、应力、剥离等的高质量的芯片。
本发明是一种半导体片的分割方法,把在由直道划分的多个区域中形成有电路的半导体片分割成各个电路的半导体芯片,包括:至少用遮盖构件遮盖半导体片的电路面的遮盖步骤;通过激光光线的照射除去覆盖直道的上部的遮盖构件的遮盖构件除去步骤;对除去了覆盖着直道的上部的遮盖构件的半导体片进行化学蚀刻,通过侵蚀直道来分割成各个半导体芯片的化学蚀刻处理步骤。
而且,所述半导体片的分割方法把以下各项作为附加要件:在遮盖构件除去步骤中,在利用激光光线除去遮盖构件之前,在直道的上部的遮盖构件上形成切削沟,使遮盖构件的切削剩余部的厚度均匀,然后向切削沟的底部照射激光光线,除去遮盖构件;半导体片是在半导体衬底上形成多层布线的半导体片,在直道上层叠着层间绝缘膜;当在直道上形成通过化学蚀刻无法除去的覆盖层时,在遮盖构件除去步骤中,向直道上照射激光光线,除去覆盖层;化学蚀刻步骤中的化学蚀刻处理是基于氟类气体的干蚀刻处理;半导体片的厚度为50μm以下。
在采用所述结构的半导体片的分割方法中,用遮盖构件覆盖半导体片的电路面,通过激光光线除去直道上的遮盖构件后,通过用化学方法蚀刻直道,分割为各半导体片,所以不使用光掩膜、曝光装置等,就能形成没有缺陷等的抗折强度高的半导体片芯片。
另外,当分割层叠多个极薄的层间绝缘膜时,通过使用激光光线,不对层间绝缘膜施加象切削那样的冲击力,所以层间绝缘膜不会象云母那样剥落。
而且,当除去直道上的遮盖构件时,如果预先通过切削来形成切削沟之后,形成切削剩余部,然后,通过激光光线除去切削剩余部,这样一来,就能使切削剩余部的厚度均匀,所以可以不用改变激光光线的扫描速度、电压,而以一定值进行照射。
附图说明
下面简要说明附图。
图1A是表示遮盖步骤的刚结束后的半导体片W的状态的说明图。
图1B是表示遮盖构件除去步骤刚结束之后的半导体片W的状态的说明图。
图1C是表示化学蚀刻处理步骤刚结束后的半导体片W的状态的说明图。
图2是表示遮盖步骤中使用的旋转镀膜机一例的立体图。
图3是表示遮盖构件除去步骤中使用的激光加工装置一例的立体图。
图4是表示化学蚀刻处理步骤中使用的干蚀刻装置一例的立体图。
图5是表示同一干蚀刻装置的搬出搬入室和处理室的剖视图。
图6是表示同一干蚀刻装置的处理室和气体供给部的结构的说明图。
图7A是表示遮盖步骤结束后的半导体片W的状态的说明图。
图7B是表示遮盖构件除去步骤中的切削沟形成后的半导体片W的状态的说明图。
图7C是表示遮盖构件除去步骤刚结束后的半导体片W的状态的说明图。
图7D是表示化学蚀刻处理步骤刚结束后的半导体片W的状态的说明图。
图8是表示遮盖构件除去步骤中的切削沟形成中使用的切削装置一例的立体图。
图9是表示设定构成同一切削装置的切削部件基准位置的样子的说明图。
图10是表示通过保持胶带与框成为一体的半导体片的平面图。
具体实施方式
首先,参照图1A~图6来说明用于实施本发明的优选实施例1。图1A、图1B、图1C是按步骤顺序表示本发明的半导体片的分割方法,图1A是表示遮盖步骤的刚结束后的半导体片W的状态的说明图;图1B是表示遮盖构件除去步骤刚结束之后的半导体片W的状态的说明图;图1C是表示化学蚀刻处理步骤刚结束后的半导体片W的状态的说明图。
在遮盖步骤中,例如使用图2所示的旋转镀膜机10,在半导体片W的表面形成遮盖构件。在旋转镀膜机10中,保持半导体片W的保持台11由驱动部12驱动,能旋转,在堵塞环状的框F的开口部而从背面一侧粘贴的胶带T的粘贴面上粘贴半导体片W的背面,通过胶带T与框F成为一体的半导体片W使电路面向上,保持在保持胶带11上。
而且,通过一边使保持台11高速旋转,一边从滴下部13向半导体片W的电路面上滴下抗蚀剂聚合物,如图1A所示,使电路面的一面由遮盖构件15遮盖(遮盖步骤)。在此,为了高效地进行以后的步骤,遮盖构件15的厚度最好为10μm~50μm以下。
须指出的是,遮盖构件15并不局限于如上所述那样,通过旋转镀膜而形成的抗蚀剂膜,也可以是粘贴在半导体片W上那样类型的胶带等。
接着,在遮盖构件除去步骤中,在遮盖步骤中遮盖的遮盖构件15中,只除去覆盖半导体片W的电路面上形成的直道的上部的部分。
在遮盖构件除去步骤中,例如使用图3所示的激光加工装置20。在该激光加工装置20中,通过胶带T与框F成为一体,并且表面被遮盖构件15覆盖的多个半导体片W收容在盒子21中。
而且,与框F成为一体,并且表面被遮盖构件15覆盖的半导体片W一片一片由搬出入部件22取出到临时放置区23,由输送部件24吸附,输送到固定台25上进行保持。
接着,通过使固定台25在+X方向移动,半导体片W首先位于对齐部件26的正下方,在在此检测直道,进行该直道和构成激光照射部件27的照射部28的Y轴方向的对位(对齐)。须指出的是,当遮盖构件15为半透明时,通过使用红外线进行对齐,能透射遮盖构件15检测直道。
如果这样进行对位,就通过固定台25在+X方向移动,从照射部28向检测的直道的上部的遮盖构件15照射激光光线,除去照射的部分的遮盖构件15。
然后,一边按每个直道间隔向Y轴方向进给(送出)激光照射部件27,一边使固定台25在X轴方向往返移动,除去同方向的全部直道的上部的遮盖构件。
使固定台25旋转90度后,如果与所述同样进行激光光线的照射,就如图1B所示,在一面遮盖在电路面上的遮盖构件15中,只除去直道S的上部的遮盖构件15(遮盖构件除去步骤)。
这样一来,通过使用激光光线来除去直道的上部的遮盖构件,以往的利用曝光的方法中所需要的专用光掩膜、曝光装置、除去装置就不再需要了,不但经济效益高,而且还能高效地执行步骤。
如果对全部半导体片,遮盖构件除去步骤一结束,就按各盒子21输送到接下来的化学蚀刻步骤中。在化学蚀刻步骤中,使用例如图4所示的干蚀刻装置30。
图4所示的干蚀刻装置30大致由进行从激光加工装置20输送来的盒子21的半导体片W的搬出和化学蚀刻步骤结束后的半导体片W向盒子21的搬入的搬出入部件31、收容由搬出入部件31搬出入的半导体片W的搬出搬入室32、进行干蚀刻的处理室33、向处理室33内供给蚀刻气体的气体供给部34构成。
遮盖构件除去步骤结束的半导体片W由搬出入部件31从盒子21取出。然后搬出搬入室32上设置的第一门35打开,把半导体片W放置在位于图5所示的搬出搬入室32内的保持部36上。
如图5所示,搬出搬入室32和处理室33由第二门37遮断,在第二门37打开时,保持部36能在搬出搬入室32的内部和处理室33的内部之间移动。
如图6所示,在处理室33中,在上下方向对峙配置连接在高频电源和调谐器38上,并且产生等离子体的一对高频电极39,在本实施例中,成为一方的高频电极39兼任保持部36的结构。另外,在保持部36上设置有冷却保持的半导体片的冷却部40。
而在气体供给部34中具有:存储蚀刻气体的容器41;把容器41中存储的蚀刻气体向处理室33供给的泵42;向冷却部40供给冷却水的冷水循环器43;向保持部36供给吸引力的吸引泵44;吸引处理室33内的蚀刻气体的吸引泵45;中和吸引泵45吸引的蚀刻气体向排出部47排出的过滤器46。
当干蚀刻遮盖构件除去步骤结束的半导体片W时,打开搬出搬入室32上设置的第一门35,搬出入部件31保持半导体片W,向图5箭头方向移动,使表面向上,把半导体片W放置在位于搬出搬入室32内的保持部36上。然后,关闭第一门35,使搬出搬入室32为真空。
接着,通过打开第二门37,使保持部36在处理室33内移动,半导体片W收容在处理室33内。在处理室33内,通过泵42供给蚀刻气体例如稀薄的氟类气体,并且从高频电源和调谐器38向高频电极39供给高频电压,通过等离子体干蚀刻半导体片W的表面。此时,通过冷水循环器43向冷却部40供给冷却水。
如果这样进行干蚀刻,则半导体片W的表面中,覆盖在直道的上部的遮盖构件在遮盖构件除去步骤中除去,但是其他部分由遮盖构件覆盖,所以只有直道通过蚀刻处理被侵蚀,如图1C所示,分割成各个半导体芯片C(化学蚀刻步骤)。
在蚀刻结束后,通过吸引泵45吸引提供给处理室33的蚀刻气体,在过滤器46中中和,从排出部47向外部排出。然后,使处理室33内为真空,打开第二门37,把保持了蚀刻完毕的半导体片W的保持部36移动到搬出搬入室32,关闭第二门37。
如果半导体片W移动到搬出搬入室32,就打开第一门35,搬出入部件31保持半导体片W,从搬出搬入室32搬出,收容在盒子21中。
通过对全部半导体片进行以上所示的步骤,利用化学蚀刻处理来分割的全部半导体片片被收容在收容到盒子21中。须指出的是,有必要使用适当的溶剂除去遮盖在各半导体片芯片C的表面上的遮盖构件。
由于这样形成的各半导体片芯片C不是使用旋转刀通过切削而分割的,所以能得到没有缺陷或应力的高质量的半导体片芯片。特别是在厚度为50μm以下的薄半导体片时,如果基于切削分割的方法,则容易产生缺陷或应力,所以如果利用本发明,则特别有效。
另外,当半导体片W为在半导体衬底上层叠多个极薄的半导体片W的多层构造的半导体片时,通过使用激光光线,不会在层间绝缘膜上作用切削时那样的冲击力,所以层间绝缘膜不会象云母那样剥落。
另外,半导体片的厚度越大,干蚀刻处理所花费时间越多,但是如果是厚度50μm以下的薄半导体片,则干蚀刻处理并不需要这么多时间,所以能确保生产性,在这一点上,本发明是有用的。
须指出的是,当在直道上形成蚀刻处理中无法除去的图案等覆盖层时,在遮盖构件除去步骤中,如果向该覆盖层照射激光光线,就能除去该覆盖层,所以通过蚀刻能分割形成这样的图案的半导体片。
下面,参照图7A~图9说明用于实施本发明的实施例2。图7A表示遮盖步骤的结束后的半导体片W的状态,图7B表示遮盖构件除去步骤中的半导体片W的状态,图7C表示遮盖构件除去步骤结束后的半导体片W的状态,图7D表示化学蚀刻处理步骤的结束之后的半导体片W的状态。
在遮盖步骤中,通过与图2所示的方法同样的方法,在半导体片W的表面形成遮盖构件15。
在遮盖构件除去步骤中,首先,使用图8所示的切削装置50,如图7(B)所示,在直道的上部的遮盖构件15上形成切削沟15a。
在该切削装置50中,收容着通过胶带T与框F成为一体,并且表面被遮盖构件15遮盖的多个半导体片W。
然后,与框F成为一体,并且表面被遮盖构件15遮盖的半导体片W通过搬出入部件52取出到临时放置区53,被输送部件54吸引,输送到固定台55保持。
通过固定台55在+X方向移动,半导体片W首先位于对齐部件56的正下方,在在此检测直道,进行该直道和构成切削部件57的旋转刀58的Y轴方向的对位(对齐)。须指出的是,当遮盖构件15半透明时,如果进行基于红外线的对齐,则透射遮盖构件15能检测直道。
如果这样进行对位,则固定台55在+X方向移动,并且旋转刀58一边高速旋转,切削部件57一边下降,高速旋转的旋转刀58切入检测的直道的上部的遮盖构件15中。
此时,通过以高精度控制基于旋转刀58的切入量,不完全除去直道的上部的遮盖构件15,形成切削沟15a。即如图7B所示,进行切削,形成切削剩余部15b。
在此,为了以高精度控制基于旋转刀58的切入量,有必要预先设定切削部件57的基准位置。因此,如图9所示,在轴59上安装了旋转刀58的由凸缘60a、60b和螺母61固定的结构的切削部件57渐渐下降,在检测部62检测旋转刀58和固定台55的周围的金属部55a接触时的导通,此时的切削部件57的位置为Z轴方向的基准位置。
金属部55a的表面和固定台55的表面处于同一平面上,半导体片W的背面无间隙地吸附在固定台55上,所以,如果以所述基准位置为基准,与形成全部切削沟15a时同样控制旋转刀58的Z轴方向的位置,则切削剩余部15b的厚度都以高精度变得均匀。
如果一边使固定台55在X轴方向往返移动,一边把切削部件57按各直道间隔在Y轴方向进给(送出),来进行上述的切削,则在同方向的直道的上部形成切削沟15a,并且形成切削剩余部15b。
如果使固定台55旋转90度后,与所述同样进行切削,则在全部沟的上部的遮盖构件15上形成切削沟15a,并且形成切削剩余部15b(遮盖构件除去步骤)。
接着,通过与图3所示的方法同样的方法,如果向切削沟15a的底部即切削剩余部15b照射激光光线,则如图7C所示,除去切削剩余部15b(遮盖构件除去步骤)。
这样,如果最初形成切削沟15a,形成切削剩余部15b,则即使假定遮盖构件15的表面不平滑,切削剩余部15b的厚度也会以高精度均匀,所以不改变激光光线的扫描速度、电压,就能高效而顺利地除去遮盖构件15。
接着,通过使用图4~图6所示的干蚀刻装置30,蚀刻半导体片W的沟,如图7D所示,分割成各个半导体芯片C。
须指出的是,在以上的说明中,通过干蚀刻进行化学蚀刻处理步骤,但是并不局限于干蚀刻,也可以通过把半导体片浸渍于氟酸类的蚀刻液体中的湿蚀刻进行。
产业上的可应用性
综上所述,本发明的半导体片的分割方法用遮盖构件遮盖半导体片的电路面,通过激光光线除去直道上的遮盖构件后,通过用化学方法对直道进行蚀刻,分割成各个半导体片芯片,所以在制造无缺陷、抗折强度高的高质量半导体片芯片时是有用的。特别是在分割层叠了多个极薄的层间绝缘膜的多层构造的半导体片时,通过使用激光光线,就不会在层间绝缘膜上施加象切削那样的冲击力,从而使绝缘膜不会象云母那样剥落,所以特别有效。
Claims (6)
1.一种半导体片的分割方法,把在由直道划分的多个区域中形成有电路的半导体片分割成各个电路的半导体芯片,其特征在于:包括:
至少用遮盖构件来遮盖该半导体片的电路面的遮盖步骤;
利用激光光线的照射来除去覆盖着该直道的上部的遮盖构件的遮盖构件除去步骤;
对除去了覆盖着该直道的上部的遮盖构件的半导体片进行化学蚀刻,侵蚀该直道而分割成各个半导体芯片的化学蚀刻处理步骤。
2.根据权利要求1所述的半导体片的分割方法,其特征在于:
在遮盖构件除去步骤中,在利用激光光线除去遮盖构件之前,在直道的上部的遮盖构件上形成切削沟,使该遮盖构件的切削剩余部的厚度均匀,然后向该切削沟的底部照射激光光线,除去遮盖构件。
3.根据权利要求1所述的半导体片的分割方法,其特征在于:
半导体片是在半导体衬底上形成有多层布线的半导体片,在直道上层叠着层间绝缘膜。
4.根据权利要求1所述的半导体片的分割方法,其特征在于:
当在直道上形成了通过化学蚀刻无法除去的覆盖层时,在遮盖构件除去步骤中,向该直道上照射激光光线来除去覆盖层。
5.根据权利要求1所述的半导体片的分割方法,其特征在于:
化学蚀刻步骤中的化学蚀刻处理是利用氟类气体进行的干蚀刻处理。
6.根据权利要求1所述的半导体片的分割方法,其特征在于:
半导体片的厚度为50μm以下。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP047864/2002 | 2002-02-25 | ||
JP2002047864 | 2002-02-25 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN1515025A true CN1515025A (zh) | 2004-07-21 |
Family
ID=27750719
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA038003813A Pending CN1515025A (zh) | 2002-02-25 | 2003-02-06 | 半导体片的分割方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US20040137700A1 (zh) |
JP (1) | JP4447325B2 (zh) |
KR (1) | KR20040086725A (zh) |
CN (1) | CN1515025A (zh) |
AU (1) | AU2003246348A1 (zh) |
DE (1) | DE10391811B4 (zh) |
TW (1) | TWI282118B (zh) |
WO (1) | WO2003071591A1 (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102848084A (zh) * | 2012-09-28 | 2013-01-02 | 合肥彩虹蓝光科技有限公司 | 一种具有不同切割深度的发光原件切割方法 |
CN103582935A (zh) * | 2011-06-15 | 2014-02-12 | 应用材料公司 | 用于以激光及等离子体蚀刻切割基板的多层掩模 |
CN103703545A (zh) * | 2011-06-15 | 2014-04-02 | 应用材料公司 | 使用基板载具的混合激光与等离子体蚀刻晶圆切割 |
CN103703546A (zh) * | 2011-06-15 | 2014-04-02 | 应用材料公司 | 使用具有等离子体蚀刻的混合式电流激光划线制程的晶片切割 |
CN104412368A (zh) * | 2012-07-13 | 2015-03-11 | 应用材料公司 | 运送切割晶圆的方法 |
CN105431252A (zh) * | 2013-08-08 | 2016-03-23 | 奥斯兰姆奥普托半导体有限责任公司 | 用于将复合体分割成半导体芯片的方法和半导体芯片 |
Families Citing this family (113)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1497851B1 (en) | 2002-04-19 | 2006-01-25 | Xsil Technology Limited | Program-controlled dicing of a substrate using a pulsed laser |
JP4961206B2 (ja) * | 2003-06-06 | 2012-06-27 | エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド | 界面活性剤膜を用いるレーザ切削加工 |
JP4456421B2 (ja) * | 2004-06-22 | 2010-04-28 | 株式会社ディスコ | 加工装置 |
JP4018088B2 (ja) * | 2004-08-02 | 2007-12-05 | 松下電器産業株式会社 | 半導体ウェハの分割方法及び半導体素子の製造方法 |
JP4018096B2 (ja) | 2004-10-05 | 2007-12-05 | 松下電器産業株式会社 | 半導体ウェハの分割方法、及び半導体素子の製造方法 |
GB2420443B (en) * | 2004-11-01 | 2009-09-16 | Xsil Technology Ltd | Increasing die strength by etching during or after dicing |
JP4769451B2 (ja) * | 2004-12-01 | 2011-09-07 | 株式会社ディスコ | 露光装置 |
JP4571870B2 (ja) * | 2005-02-02 | 2010-10-27 | 株式会社ディスコ | 露光装置 |
JP2006253402A (ja) * | 2005-03-10 | 2006-09-21 | Nec Electronics Corp | 半導体装置の製造方法 |
JP4554419B2 (ja) * | 2005-04-06 | 2010-09-29 | 株式会社ディスコ | ウェーハの分割方法 |
JP2006294807A (ja) * | 2005-04-08 | 2006-10-26 | Disco Abrasive Syst Ltd | ウエーハの分割方法 |
US7538295B2 (en) * | 2005-04-21 | 2009-05-26 | Hewlett-Packard Development Company, L.P. | Laser welding system |
JP4774852B2 (ja) * | 2005-08-02 | 2011-09-14 | セイコーエプソン株式会社 | 構造体の製造方法 |
US8728915B2 (en) | 2008-07-03 | 2014-05-20 | Advanced Semiconductor Engineering, Inc. | Wafer laser-making method and die fabricated using the same |
JP5432481B2 (ja) | 2008-07-07 | 2014-03-05 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法および半導体装置 |
JP5254733B2 (ja) * | 2008-10-02 | 2013-08-07 | 株式会社ディスコ | ウォータジェット加工方法 |
US8642448B2 (en) | 2010-06-22 | 2014-02-04 | Applied Materials, Inc. | Wafer dicing using femtosecond-based laser and plasma etch |
KR101222489B1 (ko) * | 2011-03-09 | 2013-01-15 | 한국기계연구원 | 레이저를 이용한 웨이퍼의 국부적 비정질화를 선행한 이방성 에칭방법 및 이를 이용한 다이싱 방법 및 드릴링 방법 |
US9070760B2 (en) * | 2011-03-14 | 2015-06-30 | Plasma-Therm Llc | Method and apparatus for plasma dicing a semi-conductor wafer |
US8703581B2 (en) * | 2011-06-15 | 2014-04-22 | Applied Materials, Inc. | Water soluble mask for substrate dicing by laser and plasma etch |
US8507363B2 (en) | 2011-06-15 | 2013-08-13 | Applied Materials, Inc. | Laser and plasma etch wafer dicing using water-soluble die attach film |
US8557683B2 (en) | 2011-06-15 | 2013-10-15 | Applied Materials, Inc. | Multi-step and asymmetrically shaped laser beam scribing |
US8598016B2 (en) * | 2011-06-15 | 2013-12-03 | Applied Materials, Inc. | In-situ deposited mask layer for device singulation by laser scribing and plasma etch |
US9126285B2 (en) * | 2011-06-15 | 2015-09-08 | Applied Materials, Inc. | Laser and plasma etch wafer dicing using physically-removable mask |
US9129904B2 (en) | 2011-06-15 | 2015-09-08 | Applied Materials, Inc. | Wafer dicing using pulse train laser with multiple-pulse bursts and plasma etch |
US8759197B2 (en) | 2011-06-15 | 2014-06-24 | Applied Materials, Inc. | Multi-step and asymmetrically shaped laser beam scribing |
US9029242B2 (en) | 2011-06-15 | 2015-05-12 | Applied Materials, Inc. | Damage isolation by shaped beam delivery in laser scribing process |
US8951819B2 (en) | 2011-07-11 | 2015-02-10 | Applied Materials, Inc. | Wafer dicing using hybrid split-beam laser scribing process with plasma etch |
US8652940B2 (en) | 2012-04-10 | 2014-02-18 | Applied Materials, Inc. | Wafer dicing used hybrid multi-step laser scribing process with plasma etch |
KR20130117474A (ko) * | 2012-04-18 | 2013-10-28 | 서울바이오시스 주식회사 | 배면에 패턴을 갖는 기판을 구비하는 발광다이오드 및 그의 제조방법 |
US8946057B2 (en) | 2012-04-24 | 2015-02-03 | Applied Materials, Inc. | Laser and plasma etch wafer dicing using UV-curable adhesive film |
US8969177B2 (en) | 2012-06-29 | 2015-03-03 | Applied Materials, Inc. | Laser and plasma etch wafer dicing with a double sided UV-curable adhesive film |
US9048309B2 (en) * | 2012-07-10 | 2015-06-02 | Applied Materials, Inc. | Uniform masking for wafer dicing using laser and plasma etch |
US8845854B2 (en) | 2012-07-13 | 2014-09-30 | Applied Materials, Inc. | Laser, plasma etch, and backside grind process for wafer dicing |
US8859397B2 (en) | 2012-07-13 | 2014-10-14 | Applied Materials, Inc. | Method of coating water soluble mask for laser scribing and plasma etch |
US8993414B2 (en) | 2012-07-13 | 2015-03-31 | Applied Materials, Inc. | Laser scribing and plasma etch for high die break strength and clean sidewall |
US9159574B2 (en) | 2012-08-27 | 2015-10-13 | Applied Materials, Inc. | Method of silicon etch for trench sidewall smoothing |
US9252057B2 (en) | 2012-10-17 | 2016-02-02 | Applied Materials, Inc. | Laser and plasma etch wafer dicing with partial pre-curing of UV release dicing tape for film frame wafer application |
US8975162B2 (en) | 2012-12-20 | 2015-03-10 | Applied Materials, Inc. | Wafer dicing from wafer backside |
US9236305B2 (en) | 2013-01-25 | 2016-01-12 | Applied Materials, Inc. | Wafer dicing with etch chamber shield ring for film frame wafer applications |
US8980726B2 (en) * | 2013-01-25 | 2015-03-17 | Applied Materials, Inc. | Substrate dicing by laser ablation and plasma etch damage removal for ultra-thin wafers |
WO2014159464A1 (en) | 2013-03-14 | 2014-10-02 | Applied Materials, Inc. | Multi-layer mask including non-photodefinable laser energy absorbing layer for substrate dicing by laser and plasma etch |
US8883614B1 (en) | 2013-05-22 | 2014-11-11 | Applied Materials, Inc. | Wafer dicing with wide kerf by laser scribing and plasma etching hybrid approach |
JP6336719B2 (ja) | 2013-07-16 | 2018-06-06 | 株式会社ディスコ | プラズマエッチング装置 |
US20150037915A1 (en) * | 2013-07-31 | 2015-02-05 | Wei-Sheng Lei | Method and system for laser focus plane determination in a laser scribing process |
JP6113022B2 (ja) * | 2013-08-13 | 2017-04-12 | 株式会社ディスコ | プラズマエッチング装置 |
US9105710B2 (en) * | 2013-08-30 | 2015-08-11 | Applied Materials, Inc. | Wafer dicing method for improving die packaging quality |
JP6276947B2 (ja) * | 2013-09-02 | 2018-02-07 | 株式会社ディスコ | 加工方法 |
US9224650B2 (en) | 2013-09-19 | 2015-12-29 | Applied Materials, Inc. | Wafer dicing from wafer backside and front side |
US9460966B2 (en) | 2013-10-10 | 2016-10-04 | Applied Materials, Inc. | Method and apparatus for dicing wafers having thick passivation polymer layer |
US9041198B2 (en) | 2013-10-22 | 2015-05-26 | Applied Materials, Inc. | Maskless hybrid laser scribing and plasma etching wafer dicing process |
US9312177B2 (en) | 2013-12-06 | 2016-04-12 | Applied Materials, Inc. | Screen print mask for laser scribe and plasma etch wafer dicing process |
US9299614B2 (en) | 2013-12-10 | 2016-03-29 | Applied Materials, Inc. | Method and carrier for dicing a wafer |
US9293304B2 (en) | 2013-12-17 | 2016-03-22 | Applied Materials, Inc. | Plasma thermal shield for heat dissipation in plasma chamber |
JP2015138858A (ja) * | 2014-01-22 | 2015-07-30 | 株式会社ディスコ | ウェーハの加工方法 |
US9299611B2 (en) | 2014-01-29 | 2016-03-29 | Applied Materials, Inc. | Method of wafer dicing using hybrid laser scribing and plasma etch approach with mask plasma treatment for improved mask etch resistance |
US8927393B1 (en) | 2014-01-29 | 2015-01-06 | Applied Materials, Inc. | Water soluble mask formation by dry film vacuum lamination for laser and plasma dicing |
US9012305B1 (en) | 2014-01-29 | 2015-04-21 | Applied Materials, Inc. | Wafer dicing using hybrid laser scribing and plasma etch approach with intermediate non-reactive post mask-opening clean |
US9018079B1 (en) | 2014-01-29 | 2015-04-28 | Applied Materials, Inc. | Wafer dicing using hybrid laser scribing and plasma etch approach with intermediate reactive post mask-opening clean |
US9236284B2 (en) | 2014-01-31 | 2016-01-12 | Applied Materials, Inc. | Cooled tape frame lift and low contact shadow ring for plasma heat isolation |
US8991329B1 (en) | 2014-01-31 | 2015-03-31 | Applied Materials, Inc. | Wafer coating |
EP2908335B1 (en) * | 2014-02-14 | 2020-04-15 | ams AG | Dicing method |
US20150255349A1 (en) | 2014-03-07 | 2015-09-10 | JAMES Matthew HOLDEN | Approaches for cleaning a wafer during hybrid laser scribing and plasma etching wafer dicing processes |
US9130030B1 (en) | 2014-03-07 | 2015-09-08 | Applied Materials, Inc. | Baking tool for improved wafer coating process |
US9275902B2 (en) | 2014-03-26 | 2016-03-01 | Applied Materials, Inc. | Dicing processes for thin wafers with bumps on wafer backside |
US9076860B1 (en) | 2014-04-04 | 2015-07-07 | Applied Materials, Inc. | Residue removal from singulated die sidewall |
US8975163B1 (en) | 2014-04-10 | 2015-03-10 | Applied Materials, Inc. | Laser-dominated laser scribing and plasma etch hybrid wafer dicing |
US8932939B1 (en) | 2014-04-14 | 2015-01-13 | Applied Materials, Inc. | Water soluble mask formation by dry film lamination |
US8912078B1 (en) | 2014-04-16 | 2014-12-16 | Applied Materials, Inc. | Dicing wafers having solder bumps on wafer backside |
US8999816B1 (en) | 2014-04-18 | 2015-04-07 | Applied Materials, Inc. | Pre-patterned dry laminate mask for wafer dicing processes |
US9159621B1 (en) | 2014-04-29 | 2015-10-13 | Applied Materials, Inc. | Dicing tape protection for wafer dicing using laser scribe process |
US8912075B1 (en) | 2014-04-29 | 2014-12-16 | Applied Materials, Inc. | Wafer edge warp supression for thin wafer supported by tape frame |
US8980727B1 (en) | 2014-05-07 | 2015-03-17 | Applied Materials, Inc. | Substrate patterning using hybrid laser scribing and plasma etching processing schemes |
US9112050B1 (en) | 2014-05-13 | 2015-08-18 | Applied Materials, Inc. | Dicing tape thermal management by wafer frame support ring cooling during plasma dicing |
JP2015220240A (ja) * | 2014-05-14 | 2015-12-07 | 株式会社ディスコ | ウェーハの加工方法 |
US9034771B1 (en) | 2014-05-23 | 2015-05-19 | Applied Materials, Inc. | Cooling pedestal for dicing tape thermal management during plasma dicing |
US9142459B1 (en) | 2014-06-30 | 2015-09-22 | Applied Materials, Inc. | Wafer dicing using hybrid laser scribing and plasma etch approach with mask application by vacuum lamination |
US9165832B1 (en) | 2014-06-30 | 2015-10-20 | Applied Materials, Inc. | Method of die singulation using laser ablation and induction of internal defects with a laser |
US9130057B1 (en) | 2014-06-30 | 2015-09-08 | Applied Materials, Inc. | Hybrid dicing process using a blade and laser |
US9093518B1 (en) | 2014-06-30 | 2015-07-28 | Applied Materials, Inc. | Singulation of wafers having wafer-level underfill |
US9349648B2 (en) | 2014-07-22 | 2016-05-24 | Applied Materials, Inc. | Hybrid wafer dicing approach using a rectangular shaped two-dimensional top hat laser beam profile or a linear shaped one-dimensional top hat laser beam profile laser scribing process and plasma etch process |
US9117868B1 (en) | 2014-08-12 | 2015-08-25 | Applied Materials, Inc. | Bipolar electrostatic chuck for dicing tape thermal management during plasma dicing |
US9196498B1 (en) | 2014-08-12 | 2015-11-24 | Applied Materials, Inc. | Stationary actively-cooled shadow ring for heat dissipation in plasma chamber |
US9281244B1 (en) | 2014-09-18 | 2016-03-08 | Applied Materials, Inc. | Hybrid wafer dicing approach using an adaptive optics-controlled laser scribing process and plasma etch process |
US11195756B2 (en) | 2014-09-19 | 2021-12-07 | Applied Materials, Inc. | Proximity contact cover ring for plasma dicing |
US9177861B1 (en) | 2014-09-19 | 2015-11-03 | Applied Materials, Inc. | Hybrid wafer dicing approach using laser scribing process based on an elliptical laser beam profile or a spatio-temporal controlled laser beam profile |
US9196536B1 (en) | 2014-09-25 | 2015-11-24 | Applied Materials, Inc. | Hybrid wafer dicing approach using a phase modulated laser beam profile laser scribing process and plasma etch process |
US9130056B1 (en) | 2014-10-03 | 2015-09-08 | Applied Materials, Inc. | Bi-layer wafer-level underfill mask for wafer dicing and approaches for performing wafer dicing |
US9245803B1 (en) | 2014-10-17 | 2016-01-26 | Applied Materials, Inc. | Hybrid wafer dicing approach using a bessel beam shaper laser scribing process and plasma etch process |
US10692765B2 (en) | 2014-11-07 | 2020-06-23 | Applied Materials, Inc. | Transfer arm for film frame substrate handling during plasma singulation of wafers |
US9330977B1 (en) | 2015-01-05 | 2016-05-03 | Applied Materials, Inc. | Hybrid wafer dicing approach using a galvo scanner and linear stage hybrid motion laser scribing process and plasma etch process |
US9159624B1 (en) | 2015-01-05 | 2015-10-13 | Applied Materials, Inc. | Vacuum lamination of polymeric dry films for wafer dicing using hybrid laser scribing and plasma etch approach |
US9355907B1 (en) | 2015-01-05 | 2016-05-31 | Applied Materials, Inc. | Hybrid wafer dicing approach using a line shaped laser beam profile laser scribing process and plasma etch process |
US9601375B2 (en) | 2015-04-27 | 2017-03-21 | Applied Materials, Inc. | UV-cure pre-treatment of carrier film for wafer dicing using hybrid laser scribing and plasma etch approach |
US9721839B2 (en) | 2015-06-12 | 2017-08-01 | Applied Materials, Inc. | Etch-resistant water soluble mask for hybrid wafer dicing using laser scribing and plasma etch |
US9478455B1 (en) | 2015-06-12 | 2016-10-25 | Applied Materials, Inc. | Thermal pyrolytic graphite shadow ring assembly for heat dissipation in plasma chamber |
JP2017041587A (ja) * | 2015-08-21 | 2017-02-23 | 株式会社ディスコ | ウエーハの分割方法 |
KR20170122185A (ko) * | 2015-11-09 | 2017-11-03 | 후루카와 덴키 고교 가부시키가이샤 | 반도체 칩의 제조방법 및 이것에 이용하는 마스크 일체형 표면 보호 테이프 |
US9972575B2 (en) | 2016-03-03 | 2018-05-15 | Applied Materials, Inc. | Hybrid wafer dicing approach using a split beam laser scribing process and plasma etch process |
JP6575874B2 (ja) * | 2016-03-09 | 2019-09-18 | パナソニックIpマネジメント株式会社 | 素子チップの製造方法 |
US9852997B2 (en) | 2016-03-25 | 2017-12-26 | Applied Materials, Inc. | Hybrid wafer dicing approach using a rotating beam laser scribing process and plasma etch process |
US9793132B1 (en) | 2016-05-13 | 2017-10-17 | Applied Materials, Inc. | Etch mask for hybrid laser scribing and plasma etch wafer singulation process |
JP6887722B2 (ja) * | 2016-10-25 | 2021-06-16 | 株式会社ディスコ | ウェーハの加工方法及び切削装置 |
US11158540B2 (en) | 2017-05-26 | 2021-10-26 | Applied Materials, Inc. | Light-absorbing mask for hybrid laser scribing and plasma etch wafer singulation process |
US10363629B2 (en) | 2017-06-01 | 2019-07-30 | Applied Materials, Inc. | Mitigation of particle contamination for wafer dicing processes |
US10535561B2 (en) | 2018-03-12 | 2020-01-14 | Applied Materials, Inc. | Hybrid wafer dicing approach using a multiple pass laser scribing process and plasma etch process |
US11355394B2 (en) | 2018-09-13 | 2022-06-07 | Applied Materials, Inc. | Wafer dicing using hybrid laser scribing and plasma etch approach with intermediate breakthrough treatment |
JP7171138B2 (ja) | 2018-12-06 | 2022-11-15 | 株式会社ディスコ | デバイスチップの製造方法 |
US11011424B2 (en) | 2019-08-06 | 2021-05-18 | Applied Materials, Inc. | Hybrid wafer dicing approach using a spatially multi-focused laser beam laser scribing process and plasma etch process |
US11342226B2 (en) | 2019-08-13 | 2022-05-24 | Applied Materials, Inc. | Hybrid wafer dicing approach using an actively-focused laser beam laser scribing process and plasma etch process |
US10903121B1 (en) | 2019-08-14 | 2021-01-26 | Applied Materials, Inc. | Hybrid wafer dicing approach using a uniform rotating beam laser scribing process and plasma etch process |
US11600492B2 (en) | 2019-12-10 | 2023-03-07 | Applied Materials, Inc. | Electrostatic chuck with reduced current leakage for hybrid laser scribing and plasma etch wafer singulation process |
US11211247B2 (en) | 2020-01-30 | 2021-12-28 | Applied Materials, Inc. | Water soluble organic-inorganic hybrid mask formulations and their applications |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4049944A (en) * | 1973-02-28 | 1977-09-20 | Hughes Aircraft Company | Process for fabricating small geometry semiconductive devices including integrated components |
JP4387007B2 (ja) * | 1999-10-26 | 2009-12-16 | 株式会社ディスコ | 半導体ウェーハの分割方法 |
JP2001144126A (ja) * | 1999-11-12 | 2001-05-25 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法および半導体装置 |
US6642127B2 (en) * | 2001-10-19 | 2003-11-04 | Applied Materials, Inc. | Method for dicing a semiconductor wafer |
JP2003257896A (ja) * | 2002-02-28 | 2003-09-12 | Disco Abrasive Syst Ltd | 半導体ウェーハの分割方法 |
-
2003
- 2003-02-06 JP JP2003570393A patent/JP4447325B2/ja not_active Expired - Lifetime
- 2003-02-06 WO PCT/JP2003/001235 patent/WO2003071591A1/ja active Application Filing
- 2003-02-06 KR KR10-2003-7014123A patent/KR20040086725A/ko not_active Application Discontinuation
- 2003-02-06 CN CNA038003813A patent/CN1515025A/zh active Pending
- 2003-02-06 US US10/475,676 patent/US20040137700A1/en not_active Abandoned
- 2003-02-06 AU AU2003246348A patent/AU2003246348A1/en not_active Abandoned
- 2003-02-06 DE DE10391811T patent/DE10391811B4/de not_active Expired - Lifetime
- 2003-02-13 TW TW092103008A patent/TWI282118B/zh not_active IP Right Cessation
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103582935A (zh) * | 2011-06-15 | 2014-02-12 | 应用材料公司 | 用于以激光及等离子体蚀刻切割基板的多层掩模 |
CN103703545A (zh) * | 2011-06-15 | 2014-04-02 | 应用材料公司 | 使用基板载具的混合激光与等离子体蚀刻晶圆切割 |
CN103703546A (zh) * | 2011-06-15 | 2014-04-02 | 应用材料公司 | 使用具有等离子体蚀刻的混合式电流激光划线制程的晶片切割 |
CN103582935B (zh) * | 2011-06-15 | 2016-08-24 | 应用材料公司 | 用于以激光及等离子体蚀刻切割基板的多层掩模 |
CN103703545B (zh) * | 2011-06-15 | 2016-11-02 | 应用材料公司 | 使用基板载具的混合激光与等离子体蚀刻晶圆切割 |
CN104412368A (zh) * | 2012-07-13 | 2015-03-11 | 应用材料公司 | 运送切割晶圆的方法 |
CN104412368B (zh) * | 2012-07-13 | 2019-12-03 | 应用材料公司 | 运送切割晶圆的方法 |
CN102848084A (zh) * | 2012-09-28 | 2013-01-02 | 合肥彩虹蓝光科技有限公司 | 一种具有不同切割深度的发光原件切割方法 |
CN105431252A (zh) * | 2013-08-08 | 2016-03-23 | 奥斯兰姆奥普托半导体有限责任公司 | 用于将复合体分割成半导体芯片的方法和半导体芯片 |
CN105431252B (zh) * | 2013-08-08 | 2017-06-23 | 奥斯兰姆奥普托半导体有限责任公司 | 用于将复合体分割成半导体芯片的方法和半导体芯片 |
US9873166B2 (en) | 2013-08-08 | 2018-01-23 | Osram Opto Semiconductors Gmbh | Method for dividing a composite into semiconductor chips, and semiconductor chip |
US10232471B2 (en) | 2013-08-08 | 2019-03-19 | Osram Opto Semiconductors Gmbh | Method for dividing a composite into semiconductor chips, and semiconductor chip |
Also Published As
Publication number | Publication date |
---|---|
TWI282118B (en) | 2007-06-01 |
DE10391811T5 (de) | 2005-04-14 |
AU2003246348A1 (en) | 2003-09-09 |
JP4447325B2 (ja) | 2010-04-07 |
JPWO2003071591A1 (ja) | 2005-06-16 |
DE10391811B4 (de) | 2012-06-21 |
WO2003071591A1 (fr) | 2003-08-28 |
TW200303577A (en) | 2003-09-01 |
US20040137700A1 (en) | 2004-07-15 |
KR20040086725A (ko) | 2004-10-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1515025A (zh) | 半导体片的分割方法 | |
CN1515026A (zh) | 半导体片的分割方法 | |
KR102044042B1 (ko) | 웨이퍼의 가공 방법 | |
JP4387007B2 (ja) | 半導体ウェーハの分割方法 | |
CN100552917C (zh) | 半导体器件的制造方法 | |
TWI732790B (zh) | 晶圓的分割方法 | |
TWI654709B (zh) | 切割晶圓背側上具有焊料凸塊的晶圓 | |
JP2019125723A (ja) | 素子チップの製造方法 | |
WO2020017599A1 (ja) | 基板処理システム及び基板処理方法 | |
CN1518072A (zh) | 切割晶片的方法 | |
JP2008053417A (ja) | 半導体チップの製造方法及び半導体ウエハの処理方法 | |
JP2007173475A (ja) | ウエーハの分割方法 | |
CN101036224A (zh) | 分割半导体晶片的方法和半导体器件的制造方法 | |
JP2003179005A (ja) | 半導体素子分離方法及び半導体素子分離装置 | |
KR20170034316A (ko) | 웨이퍼의 가공 방법 | |
CN1581443A (zh) | 晶片加工方法 | |
JP6904368B2 (ja) | 半導体基板の処理方法及び半導体基板の処理装置 | |
KR20200005668A (ko) | 웨이퍼 다이싱 프로세스들 동안의 입자 오염의 완화 | |
JP2005277136A (ja) | 基板製造方法および基板製造装置 | |
JP6524558B2 (ja) | 素子チップの製造方法 | |
US10546783B2 (en) | Manufacturing process of element chip and substrate heating apparatus | |
TW202032640A (zh) | 裝置晶片的製造方法 | |
JP2020053472A (ja) | 素子チップの製造方法 | |
US11851363B2 (en) | Method for manufacturing ultra-thin glass substrate and method for manufacturing display panel | |
CN1163951A (zh) | 半导体材料的制造方法及所用设备 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
REG | Reference to a national code |
Ref country code: HK Ref legal event code: DE Ref document number: 1063691 Country of ref document: HK |
|
C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication | ||
REG | Reference to a national code |
Ref country code: HK Ref legal event code: WD Ref document number: 1063691 Country of ref document: HK |