CN100552917C - 半导体器件的制造方法 - Google Patents
半导体器件的制造方法 Download PDFInfo
- Publication number
- CN100552917C CN100552917C CNB2006101438339A CN200610143833A CN100552917C CN 100552917 C CN100552917 C CN 100552917C CN B2006101438339 A CNB2006101438339 A CN B2006101438339A CN 200610143833 A CN200610143833 A CN 200610143833A CN 100552917 C CN100552917 C CN 100552917C
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- CN
- China
- Prior art keywords
- mentioned
- semiconductor wafer
- groove
- wafer
- manufacture method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
- B23K26/3568—Modifying rugosity
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
Abstract
Description
Claims (4)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005325022A JP2007134454A (ja) | 2005-11-09 | 2005-11-09 | 半導体装置の製造方法 |
JP325022/2005 | 2005-11-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1964018A CN1964018A (zh) | 2007-05-16 |
CN100552917C true CN100552917C (zh) | 2009-10-21 |
Family
ID=38004315
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006101438339A Active CN100552917C (zh) | 2005-11-09 | 2006-11-09 | 半导体器件的制造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7642113B2 (zh) |
JP (1) | JP2007134454A (zh) |
KR (1) | KR100852811B1 (zh) |
CN (1) | CN100552917C (zh) |
TW (1) | TW200719432A (zh) |
Families Citing this family (75)
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US7183137B2 (en) * | 2003-12-01 | 2007-02-27 | Taiwan Semiconductor Manufacturing Company | Method for dicing semiconductor wafers |
JP4833657B2 (ja) * | 2005-12-19 | 2011-12-07 | 株式会社ディスコ | ウエーハの分割方法 |
US7993972B2 (en) * | 2008-03-04 | 2011-08-09 | Stats Chippac, Ltd. | Wafer level die integration and method therefor |
US8143081B2 (en) * | 2007-02-13 | 2012-03-27 | Huga Optotech Inc. | Method for dicing a diced optoelectronic semiconductor wafer |
JP2009032971A (ja) * | 2007-07-27 | 2009-02-12 | Rohm Co Ltd | 窒化物半導体素子の製造方法 |
EP2075840B1 (en) | 2007-12-28 | 2014-08-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for dicing a wafer with semiconductor elements formed thereon and corresponding device |
JP5317712B2 (ja) | 2008-01-22 | 2013-10-16 | 株式会社半導体エネルギー研究所 | 半導体装置及び半導体装置の作製方法 |
JP2009182178A (ja) * | 2008-01-31 | 2009-08-13 | Disco Abrasive Syst Ltd | デバイスの製造方法 |
JP5376961B2 (ja) * | 2008-02-01 | 2013-12-25 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2009206162A (ja) * | 2008-02-26 | 2009-09-10 | Disco Abrasive Syst Ltd | ウエーハの分割方法 |
DE102008001952A1 (de) * | 2008-05-23 | 2009-11-26 | Robert Bosch Gmbh | Verfahren zur Herstellung von vereinzelten, auf einem Siliziumsubstrat angeordneten mikromechanischen Bauteilen und hieraus hergestellte Bauteile |
JP2009290148A (ja) * | 2008-06-02 | 2009-12-10 | Disco Abrasive Syst Ltd | ウエーハの分割方法 |
US8043940B2 (en) * | 2008-06-02 | 2011-10-25 | Renesas Electronics Corporation | Method for manufacturing semiconductor chip and semiconductor device |
JP2010016116A (ja) * | 2008-07-02 | 2010-01-21 | Disco Abrasive Syst Ltd | 半導体デバイスの製造方法 |
JP2010050416A (ja) | 2008-08-25 | 2010-03-04 | Toshiba Corp | 半導体装置の製造方法 |
JP5198203B2 (ja) * | 2008-09-30 | 2013-05-15 | 株式会社ディスコ | 加工装置 |
KR20100050793A (ko) * | 2008-11-06 | 2010-05-14 | 삼성전자주식회사 | 반도체 장치 제조 방법 |
KR101023070B1 (ko) * | 2008-11-24 | 2011-03-24 | 세메스 주식회사 | 기판 절단 방법 |
JP2010182958A (ja) * | 2009-02-06 | 2010-08-19 | Seiko Instruments Inc | 半導体装置および半導体装置の製造方法 |
US9165573B1 (en) * | 2009-11-12 | 2015-10-20 | Western Digital (Fremont), Llc | Method for controlling camber on air bearing surface of a slider |
US8129258B2 (en) * | 2009-12-23 | 2012-03-06 | Xerox Corporation | Method for dicing a semiconductor wafer, a chip diced from a semiconductor wafer, and an array of chips diced from a semiconductor wafer |
JP5553642B2 (ja) * | 2010-02-24 | 2014-07-16 | 株式会社テラプローブ | 半導体装置の製造方法及び薄型化基板の製造方法 |
JP5981094B2 (ja) * | 2010-06-24 | 2016-08-31 | 東芝機械株式会社 | ダイシング方法 |
JP5687864B2 (ja) * | 2010-08-10 | 2015-03-25 | 株式会社ディスコ | サファイアウェーハの分割方法 |
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KR101688591B1 (ko) * | 2010-11-05 | 2016-12-22 | 삼성전자주식회사 | 반도체 칩의 제조 방법 |
JP2012104778A (ja) * | 2010-11-15 | 2012-05-31 | Disco Abrasive Syst Ltd | 光デバイスウエーハの分割方法 |
JP5953645B2 (ja) * | 2010-11-16 | 2016-07-20 | 株式会社東京精密 | 半導体基板の切断方法及び半導体基板の切断装置 |
CN102097546B (zh) * | 2010-11-25 | 2013-03-06 | 山东华光光电子有限公司 | 一种led芯片的切割方法 |
CN102079015A (zh) * | 2010-11-25 | 2011-06-01 | 山东华光光电子有限公司 | 一种GaAs基LED芯片的激光切割方法 |
JP5533695B2 (ja) * | 2011-01-26 | 2014-06-25 | 豊田合成株式会社 | 半導体チップの製造方法および半導体チップの実装方法 |
CN102897708B (zh) * | 2011-07-29 | 2015-03-11 | 美新半导体(无锡)有限公司 | Mems晶圆的切割方法 |
US8569086B2 (en) * | 2011-08-24 | 2013-10-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method of dicing semiconductor devices |
JP5939752B2 (ja) * | 2011-09-01 | 2016-06-22 | 株式会社ディスコ | ウェーハの分割方法 |
CN103178007A (zh) * | 2011-12-20 | 2013-06-26 | 杭州士兰集成电路有限公司 | 划片方法、芯片制作方法及凸点玻璃封装二极管 |
JP5996260B2 (ja) * | 2012-05-09 | 2016-09-21 | 株式会社ディスコ | 被加工物の分割方法 |
TWI581451B (zh) * | 2012-05-21 | 2017-05-01 | 晶元光電股份有限公司 | 光電元件及其製造方法 |
JP6029347B2 (ja) * | 2012-06-26 | 2016-11-24 | 株式会社ディスコ | ウエーハの加工方法 |
JP6013858B2 (ja) * | 2012-10-01 | 2016-10-25 | 株式会社ディスコ | ウェーハの加工方法 |
US8809166B2 (en) * | 2012-12-20 | 2014-08-19 | Nxp B.V. | High die strength semiconductor wafer processing method and system |
CN103077951B (zh) * | 2013-01-09 | 2016-03-30 | 苏州晶方半导体科技股份有限公司 | Bsi图像传感器的晶圆级封装方法 |
JP6078376B2 (ja) * | 2013-02-22 | 2017-02-08 | 株式会社ディスコ | ウエーハの加工方法 |
JP6121281B2 (ja) * | 2013-08-06 | 2017-04-26 | 株式会社ディスコ | ウエーハの加工方法 |
JP6230422B2 (ja) * | 2014-01-15 | 2017-11-15 | 株式会社ディスコ | ウエーハの加工方法 |
JP6325279B2 (ja) * | 2014-02-21 | 2018-05-16 | 株式会社ディスコ | ウエーハの加工方法 |
JP5906265B2 (ja) * | 2014-03-03 | 2016-04-20 | 株式会社ディスコ | ウエーハの分割方法 |
US9257584B2 (en) * | 2014-03-14 | 2016-02-09 | Tsmc Solar Ltd. | Solar cell interconnects and method of fabricating same |
JP6324796B2 (ja) * | 2014-04-21 | 2018-05-16 | 株式会社ディスコ | 単結晶基板の加工方法 |
US9093518B1 (en) * | 2014-06-30 | 2015-07-28 | Applied Materials, Inc. | Singulation of wafers having wafer-level underfill |
US9165832B1 (en) | 2014-06-30 | 2015-10-20 | Applied Materials, Inc. | Method of die singulation using laser ablation and induction of internal defects with a laser |
JP6328513B2 (ja) | 2014-07-28 | 2018-05-23 | 株式会社ディスコ | ウエーハの加工方法 |
DE102015204698B4 (de) | 2015-03-16 | 2023-07-20 | Disco Corporation | Verfahren zum Teilen eines Wafers |
DE102016215473B4 (de) | 2015-09-10 | 2023-10-26 | Disco Corporation | Verfahren zum Bearbeiten eines Substrats |
JP5995023B2 (ja) * | 2015-10-13 | 2016-09-21 | 株式会社東京精密 | 半導体基板の割断方法 |
JP6081005B2 (ja) * | 2016-04-21 | 2017-02-15 | 株式会社東京精密 | 研削・研磨装置及び研削・研磨方法 |
JP6081006B2 (ja) * | 2016-04-26 | 2017-02-15 | 株式会社東京精密 | ウェハ割断方法及びウェハ割断装置 |
JP6081008B2 (ja) * | 2016-06-13 | 2017-02-15 | 株式会社東京精密 | ウェハ加工装置及びウェハ加工方法 |
JP6276332B2 (ja) * | 2016-07-04 | 2018-02-07 | 株式会社東京精密 | ウェーハ加工システム |
JP6276347B2 (ja) * | 2016-08-18 | 2018-02-07 | 株式会社東京精密 | ウェーハ加工システム |
JP6276356B2 (ja) * | 2016-09-21 | 2018-02-07 | 株式会社東京精密 | ウェーハ加工方法 |
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JP2018074123A (ja) | 2016-11-04 | 2018-05-10 | 株式会社ディスコ | ウエーハの加工方法 |
JP6870974B2 (ja) * | 2016-12-08 | 2021-05-12 | 株式会社ディスコ | 被加工物の分割方法 |
JP2018125479A (ja) * | 2017-02-03 | 2018-08-09 | 株式会社ディスコ | ウェーハの加工方法 |
JP2018157168A (ja) * | 2017-03-21 | 2018-10-04 | 東芝メモリ株式会社 | 半導体装置及びその製造方法 |
JP6649308B2 (ja) * | 2017-03-22 | 2020-02-19 | キオクシア株式会社 | 半導体装置およびその製造方法 |
JP6938212B2 (ja) | 2017-05-11 | 2021-09-22 | 株式会社ディスコ | 加工方法 |
JP7193920B2 (ja) * | 2018-03-09 | 2022-12-21 | 株式会社ディスコ | パッケージ基板の加工方法 |
JP7027234B2 (ja) * | 2018-04-16 | 2022-03-01 | 株式会社ディスコ | ウエーハの加工方法 |
JP7366490B2 (ja) | 2019-04-19 | 2023-10-23 | 株式会社ディスコ | チップの製造方法 |
US11289378B2 (en) * | 2019-06-13 | 2022-03-29 | Wolfspeed, Inc. | Methods for dicing semiconductor wafers and semiconductor devices made by the methods |
US20210107094A1 (en) * | 2019-10-14 | 2021-04-15 | Haesung Ds Co., Ltd. | Apparatus for and method of polishing surface of substrate |
KR20210135128A (ko) | 2020-05-04 | 2021-11-12 | 삼성전자주식회사 | 반도체 패키지 및 그 제조 방법 |
CN111739809A (zh) * | 2020-06-10 | 2020-10-02 | 上海矽睿科技有限公司 | 一种晶圆级封装方法 |
CN114002581B (zh) * | 2021-11-02 | 2023-11-21 | 中国电子科技集团公司第四十四研究所 | 焦平面阵列探测器倒焊芯片内部互连情况的检测方法 |
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-
2005
- 2005-11-09 JP JP2005325022A patent/JP2007134454A/ja active Pending
-
2006
- 2006-10-11 TW TW095137373A patent/TW200719432A/zh unknown
- 2006-11-08 KR KR1020060109809A patent/KR100852811B1/ko not_active IP Right Cessation
- 2006-11-08 US US11/594,196 patent/US7642113B2/en active Active
- 2006-11-09 CN CNB2006101438339A patent/CN100552917C/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN1964018A (zh) | 2007-05-16 |
US7642113B2 (en) | 2010-01-05 |
KR100852811B1 (ko) | 2008-08-18 |
TWI314766B (zh) | 2009-09-11 |
TW200719432A (en) | 2007-05-16 |
US20070105345A1 (en) | 2007-05-10 |
KR20070049971A (ko) | 2007-05-14 |
JP2007134454A (ja) | 2007-05-31 |
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