CN108701651B - 使用分裂光束激光划线工艺与等离子体蚀刻工艺的混合式晶片切割方法 - Google Patents

使用分裂光束激光划线工艺与等离子体蚀刻工艺的混合式晶片切割方法 Download PDF

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Publication number
CN108701651B
CN108701651B CN201780014005.1A CN201780014005A CN108701651B CN 108701651 B CN108701651 B CN 108701651B CN 201780014005 A CN201780014005 A CN 201780014005A CN 108701651 B CN108701651 B CN 108701651B
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China
Prior art keywords
split
laser
laser beam
scribing
semiconductor wafer
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Chinese (zh)
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CN108701651A (zh
Inventor
J·帕克
类维生
B·伊顿
J·S·帕帕努
A·库玛
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Applied Materials Inc
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Applied Materials Inc
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
    • B65D47/00—Closures with filling and discharging, or with discharging, devices
    • B65D47/04—Closures with discharging devices other than pumps
    • B65D47/20—Closures with discharging devices other than pumps comprising hand-operated members for controlling discharge
    • B65D47/24—Closures with discharging devices other than pumps comprising hand-operated members for controlling discharge with poppet valves or lift valves, i.e. valves opening or closing a passageway by a relative motion substantially perpendicular to the plane of the seat
    • B65D47/241—Closures with discharging devices other than pumps comprising hand-operated members for controlling discharge with poppet valves or lift valves, i.e. valves opening or closing a passageway by a relative motion substantially perpendicular to the plane of the seat the valve being opened or closed by actuating a cap-like element
    • B65D47/244—Closures with discharging devices other than pumps comprising hand-operated members for controlling discharge with poppet valves or lift valves, i.e. valves opening or closing a passageway by a relative motion substantially perpendicular to the plane of the seat the valve being opened or closed by actuating a cap-like element being rotated without axial translation, whilst transmitting axial motion to an internal valve stem or valve seat
    • A—HUMAN NECESSITIES
    • A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
    • A47G—HOUSEHOLD OR TABLE EQUIPMENT
    • A47G19/00—Table service
    • A47G19/22—Drinking vessels or saucers used for table service
    • A—HUMAN NECESSITIES
    • A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
    • A47G—HOUSEHOLD OR TABLE EQUIPMENT
    • A47G19/00—Table service
    • A47G19/22—Drinking vessels or saucers used for table service
    • A47G19/2205—Drinking glasses or vessels
    • A47G19/2266—Means for facilitating drinking, e.g. for infants or invalids
    • A47G19/2272—Means for facilitating drinking, e.g. for infants or invalids from drinking glasses or cups comprising lids or covers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K10/00—Welding or cutting by means of a plasma
    • B23K10/003—Scarfing, desurfacing or deburring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1 ns or less
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
    • B65D47/00—Closures with filling and discharging, or with discharging, devices
    • B65D47/04—Closures with discharging devices other than pumps
    • B65D47/32—Closures with discharging devices other than pumps with means for venting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/072—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures
    • H10W20/087—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures involving multiple stacked pre-patterned masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/501—Marks applied to devices, e.g. for alignment or identification for use before dicing
    • H10W46/503—Located in scribe lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • General Health & Medical Sciences (AREA)
  • Pediatric Medicine (AREA)
  • Health & Medical Sciences (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)
  • Closures For Containers (AREA)
  • Electromagnetism (AREA)
  • Drying Of Semiconductors (AREA)
CN201780014005.1A 2016-03-03 2017-01-27 使用分裂光束激光划线工艺与等离子体蚀刻工艺的混合式晶片切割方法 Active CN108701651B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/060,224 2016-03-03
US15/060,224 US9972575B2 (en) 2016-03-03 2016-03-03 Hybrid wafer dicing approach using a split beam laser scribing process and plasma etch process
PCT/US2017/015479 WO2017151254A2 (en) 2016-03-03 2017-01-27 Hybrid wafer dicing approach using a split beam laser scribing process and plasma etch process

Publications (2)

Publication Number Publication Date
CN108701651A CN108701651A (zh) 2018-10-23
CN108701651B true CN108701651B (zh) 2023-08-01

Family

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CN201780014005.1A Active CN108701651B (zh) 2016-03-03 2017-01-27 使用分裂光束激光划线工艺与等离子体蚀刻工艺的混合式晶片切割方法

Country Status (8)

Country Link
US (2) US9972575B2 (enExample)
EP (1) EP3214012A1 (enExample)
JP (2) JP2019512875A (enExample)
KR (1) KR20180114220A (enExample)
CN (1) CN108701651B (enExample)
SG (1) SG11201806838YA (enExample)
TW (2) TWI775464B (enExample)
WO (1) WO2017151254A2 (enExample)

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US10720337B2 (en) * 2018-07-20 2020-07-21 Asm Ip Holding B.V. Pre-cleaning for etching of dielectric materials
US11469141B2 (en) * 2018-08-07 2022-10-11 Texas Instruments Incorporated Laser dicing for singulation
US11355394B2 (en) * 2018-09-13 2022-06-07 Applied Materials, Inc. Wafer dicing using hybrid laser scribing and plasma etch approach with intermediate breakthrough treatment
KR102706426B1 (ko) 2018-09-21 2024-09-12 삼성전자주식회사 기판 쏘잉 방법 및 반도체 칩의 싱귤레이션 방법
US11011424B2 (en) * 2019-08-06 2021-05-18 Applied Materials, Inc. Hybrid wafer dicing approach using a spatially multi-focused laser beam laser scribing process and plasma etch process
US11342226B2 (en) * 2019-08-13 2022-05-24 Applied Materials, Inc. Hybrid wafer dicing approach using an actively-focused laser beam laser scribing process and plasma etch process
JP7300953B2 (ja) * 2019-09-27 2023-06-30 株式会社ディスコ ウエーハの加工方法
GB201917988D0 (en) * 2019-12-09 2020-01-22 Spts Technologies Ltd A semiconductor wafer dicing process
CN114730743B (zh) * 2019-12-19 2025-09-09 Ev集团E·索尔纳有限责任公司 经切割的封装组件及其制造方法
JP7399565B2 (ja) * 2019-12-23 2023-12-18 株式会社ディスコ 被加工物の加工方法
JP2021136248A (ja) * 2020-02-21 2021-09-13 株式会社ディスコ デバイスウェーハの加工方法
KR102913863B1 (ko) * 2021-04-21 2026-01-19 주식회사 제우스 기판처리장치 및 기판처리방법
DE102022204685B3 (de) * 2022-05-13 2023-10-05 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein Optik zur Erzeugung eines linearen Fokus, Vorrichtung und Verfahren zur Bearbeitung eines Werkstücks
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