JP2019511118A - スペーサ用の窒化ケイ素膜の選択的堆積 - Google Patents
スペーサ用の窒化ケイ素膜の選択的堆積 Download PDFInfo
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- JP2019511118A JP2019511118A JP2018548122A JP2018548122A JP2019511118A JP 2019511118 A JP2019511118 A JP 2019511118A JP 2018548122 A JP2018548122 A JP 2018548122A JP 2018548122 A JP2018548122 A JP 2018548122A JP 2019511118 A JP2019511118 A JP 2019511118A
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- 229910052581 Si3N4 Inorganic materials 0.000 title claims description 19
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims description 18
- 230000008021 deposition Effects 0.000 title description 26
- 125000006850 spacer group Chemical group 0.000 title description 9
- 238000000034 method Methods 0.000 claims description 140
- 239000007789 gas Substances 0.000 claims description 136
- 239000000758 substrate Substances 0.000 claims description 134
- 230000008569 process Effects 0.000 claims description 116
- 238000012545 processing Methods 0.000 claims description 90
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 85
- 229910052757 nitrogen Inorganic materials 0.000 claims description 42
- 239000000376 reactant Substances 0.000 claims description 25
- 239000002243 precursor Substances 0.000 claims description 24
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 22
- 239000012686 silicon precursor Substances 0.000 claims description 19
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 16
- 239000012528 membrane Substances 0.000 claims description 14
- 229910021529 ammonia Inorganic materials 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 10
- 229910052786 argon Inorganic materials 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims description 7
- 239000001307 helium Substances 0.000 claims description 6
- 229910052734 helium Inorganic materials 0.000 claims description 6
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 238000000151 deposition Methods 0.000 abstract description 33
- 239000010408 film Substances 0.000 description 101
- 210000002381 plasma Anatomy 0.000 description 62
- 238000009826 distribution Methods 0.000 description 40
- 235000012431 wafers Nutrition 0.000 description 23
- 238000000231 atomic layer deposition Methods 0.000 description 18
- 238000010926 purge Methods 0.000 description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 238000000429 assembly Methods 0.000 description 11
- 230000000712 assembly Effects 0.000 description 11
- 238000003672 processing method Methods 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 10
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- 230000015572 biosynthetic process Effects 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 4
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- 238000004519 manufacturing process Methods 0.000 description 3
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- 150000004767 nitrides Chemical class 0.000 description 3
- 238000009832 plasma treatment Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010574 gas phase reaction Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- VYIRVGYSUZPNLF-UHFFFAOYSA-N n-(tert-butylamino)silyl-2-methylpropan-2-amine Chemical compound CC(C)(C)N[SiH2]NC(C)(C)C VYIRVGYSUZPNLF-UHFFFAOYSA-N 0.000 description 2
- SSCVMVQLICADPI-UHFFFAOYSA-N n-methyl-n-[tris(dimethylamino)silyl]methanamine Chemical compound CN(C)[Si](N(C)C)(N(C)C)N(C)C SSCVMVQLICADPI-UHFFFAOYSA-N 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000002123 temporal effect Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000012080 ambient air Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- WYEMLYFITZORAB-UHFFFAOYSA-N boscalid Chemical compound C1=CC(Cl)=CC=C1C1=CC=CC=C1NC(=O)C1=CC=CN=C1Cl WYEMLYFITZORAB-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000012864 cross contamination Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000033444 hydroxylation Effects 0.000 description 1
- 238000005805 hydroxylation reaction Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- OWKFQWAGPHVFRF-UHFFFAOYSA-N n-(diethylaminosilyl)-n-ethylethanamine Chemical compound CCN(CC)[SiH2]N(CC)CC OWKFQWAGPHVFRF-UHFFFAOYSA-N 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
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- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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Abstract
【選択図】図6D
Description
Claims (15)
- 頂部、底部および側壁を備える少なくとも1つの特徴部をその上に有する基板表面を、用意することと、
前記少なくとも1つの特徴部上に膜を、前記膜が前記頂部上、前記底部上および前記側壁上に形成されるように、形成することと、
前記膜をプラズマで処理して、前記特徴部の前記頂部および前記底部が、前記側壁上の前記膜よりも高いウェットエッチング速度を有するように、前記特徴部の前記頂部上および前記底部上の前記膜の特性を変化させることと
を含む処理方法。 - 順次的に前記膜を形成して前記膜を処理することを繰り返して、ある総厚さの膜を堆積させることをさらに含む、請求項1に記載の方法。
- 前記膜が、SiNを含む、請求項1に記載の方法。
- 前記膜を処理することが、高いイオン濃度を有する指向性プラズマに前記膜を曝すことを含む、請求項1に記載の方法。
- 前記プラズマが、水素、アルゴン、窒素、アンモニア、酸素、ヘリウムのうちの1つ以上を含む、請求項4に記載の方法。
- 前記指向性プラズマが、縁部を有するスロットを有するプラズマアセンブリ内に形成された遠隔プラズマであり、前記プラズマが、前記スロットを通って流れる、請求項4に記載の方法。
- 前記プラズマが、前記スロットの前記縁部に隣接して高いイオンエネルギーおよびイオン濃度を有する、請求項6に記載の方法。
- 前記膜を形成することが、前記基板表面をケイ素前駆体および窒素反応物に順次的に曝して、窒化ケイ素膜を形成することを含む、請求項1に記載の方法。
- 前記基板表面が、前記ケイ素前駆体への曝露と前記窒素反応物への曝露との間で窒素前駆体に曝され、前記窒素前駆体が、前記基板表面上のケイ素前駆体分子と反応しない種を含む、請求項8に記載の方法。
- 前記膜を形成することが、前記基板表面を、ジクロロシランを含むケイ素前駆体、アンモニアを含む窒素前駆体、およびN2/Arプラズマを含む窒素反応物に順次的に曝すことを含む、請求項9に記載の方法。
- 前記プラズマを処理することが、アンモニアおよびヘリウムを含む、請求項9に記載の方法。
- 前記特徴部の前記頂部および前記底部の前記ウェットエッチング速度が、約20Å/分以上である、請求項11に記載の方法。
- 約1Å〜約50Åの範囲の厚さを有する膜が堆積された後に、前記膜を処理することが行われる、請求項1に記載の方法。
- 希HFで前記膜をエッチングして、前記特徴部の前記頂部および前記底部から前記膜を選択的に除去することをさらに含む、請求項1に記載の方法。
- 頂部、底部および側壁を備える特徴部を有する基板表面を有する基板を、各プロセス領域がガスカーテンによって隣接するプロセス領域から分離されている複数のプロセス領域を備える処理チャンバ内に配置することと、
前記基板表面の少なくとも一部を、前記処理チャンバの第1のプロセス領域内で、ケイ素前駆体を含む第1のプロセス条件に曝すことと、
前記基板表面を、ガスカーテンを通って前記処理チャンバの第2のプロセス領域へ、横方向に移動させることと、
前記基板表面を、前記処理チャンバの前記第2のプロセス領域内で、窒素前駆体を含む第2のプロセス条件に曝すことと、
前記基板表面を、ガスカーテンを通って前記処理チャンバの第3のプロセス領域へ、横方向に移動させることと、
前記基板表面を、前記処理チャンバの前記第3のプロセス領域内で、窒素反応物を含む第3のプロセス条件に曝して、前記特徴部の前記頂部上、前記底部上および前記側壁上に窒化ケイ素膜を形成することと、
前記第1のプロセス条件、前記第2のプロセス条件および前記第3のプロセス条件への曝露を繰り返して、所定の厚さの窒化ケイ素膜を形成することと、
前記基板表面を、前記特徴部の前記頂部上および前記底部上の前記窒化ケイ素膜のウェットエッチング速度を選択的に減少させる高イオン濃度プラズマを含む処理環境を含む、前記処理チャンバの第4のプロセス領域へ移動させることと
を含む処理方法。
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US20170263437A1 (en) | 2017-09-14 |
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US10319583B2 (en) | 2019-06-11 |
KR102293218B1 (ko) | 2021-08-23 |
WO2017160647A1 (en) | 2017-09-21 |
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