JP2018533218A - 表面毒化処理によるボトムアップ式間隙充填 - Google Patents
表面毒化処理によるボトムアップ式間隙充填 Download PDFInfo
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- JP2018533218A JP2018533218A JP2018520533A JP2018520533A JP2018533218A JP 2018533218 A JP2018533218 A JP 2018533218A JP 2018520533 A JP2018520533 A JP 2018520533A JP 2018520533 A JP2018520533 A JP 2018520533A JP 2018533218 A JP2018533218 A JP 2018533218A
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Classifications
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- C23C16/45523—Pulsed gas flow or change of composition over time
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- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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- C23C16/345—Silicon nitride
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45534—Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers
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- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
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- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
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- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
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Abstract
【選択図】図6C
Description
空間的ALD処理チャンバで一定の堆積サイクル(100サイクル)後の厚さに対するNH3プラズマ曝露時間の影響を、図9に示している。この例は、一堆積サイクルに対して一毒化曝露を行うように実装された。
Claims (15)
- 処理方法であって、
表面上に少なくとも1つのフィーチャを有する基板表面を、前記フィーチャの底部と比べて前記フィーチャの上部を優先的に毒化するために、抑制物質を含む有機系毒化剤に曝露することと、
ボトムアップ法で前記フィーチャ内に膜を堆積させることとを含む、方法。 - 前記フィーチャ内に前記膜を堆積させることが、前記基板表面を前駆体と反応体に連続して曝露することを含む、請求項1に記載の方法。
- 前記基板表面を前記毒化剤に曝露することが、前記前駆体への各曝露の前に行われる、請求項2に記載の方法。
- 前記基板表面が、膜が約10Åから約50Åの範囲内の厚さだけ堆積した後に前記毒化剤に曝露される、請求項1から3のいずれか一項に記載の方法。
- 前記毒化剤がプラズマを含む、請求項1から3のいずれか一項に記載の方法。
- 前記プラズマが、NH3、N2、Ar、H2O、CO2、N2O、H2、及び/又はヒドラジンのうちの一又は複数を含む、請求項5に記載の方法。
- 前記毒化剤がプラズマに導入される、請求項1から3のいずれか一項に記載の方法。
- 半飽和量の前記毒化剤が前記プラズマに導入される、請求項7に記載の方法。
- 前記有機系毒化剤が、ヒドラジン、水、エチレンジアミン、エタノールアミン、アルキル、アミン、アルケン、エポキサイド、ポリアミン、及び/又はアルコールのうちの一又は複数を含む、請求項7に記載の方法。
- 前記有機系毒化剤が前記表面と熱反応する、請求項1から3のいずれか一項に記載の方法。
- 前記フィーチャの前記上部と優先的に反応するよう、少量の前記有機系毒化剤が導入される、請求項10に記載の方法。
- 前記フィーチャが10:1以上のアスペクト比を有する、請求項1から3のいずれか一項に記載の方法。
- 前記有機系毒化剤への前記曝露と、前記フィーチャを充填するための前記膜の堆積とを反復することを更に含む、請求項1から3のいずれか一項に記載の方法。
- 前記フィーチャ内に堆積された前記膜が、2を下回る湿式エッチング速度比を有する、請求項13に記載の方法。
- 処理方法であって、
複数の区域を備える処理チャンバ内に、基板表面を有する基板を置くことであって、各区域がガスカーテンによって隣接する区域から分離されており、前記基板表面が、上部、底部、及び側面を伴い、かつ10:1以上のアスペクト比を伴う少なくとも1つのフィーチャを有する、基板を置くことと、
前記処理チャンバの第1区域において、前記基板表面の少なくとも一部分を第1プロセス条件に曝露することであって、前記第1プロセス条件が、前記フィーチャの前記底部と比べて前記フィーチャの前記上部における膜成長を優先的に抑制するための、有機系毒化剤を含む、第1プロセス条件に曝露することと、
前記基板表面を、前記処理チャンバの第2区域へと、ガスカーテンを通して横方向に動かすことと、
前記処理チャンバの前記第2区域において、前記基板表面を、シリコン前駆体を含む第2プロセス条件に曝露することと、
前記基板表面を、前記処理チャンバの第3区域へと、ガスカーテンを通して横方向に動かすことと、
前記処理チャンバの前記第3区域において、前記基板表面を第3プロセス条件に曝露することであって、前記第3プロセス条件が、SiO2膜を形成するための酸素含有反応体を含む、第3プロセス条件に曝露することと、
前記フィーチャを充填するために、前記基板表面の横方向移動を含む、前記第1区域、前記第2区域、及び前記第3区域への曝露を反復することとを含む、方法。
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