JP2019140157A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 274
- 238000007789 sealing Methods 0.000 claims description 28
- 238000005516 engineering process Methods 0.000 abstract description 12
- 239000004020 conductor Substances 0.000 description 46
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000000446 fuel Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000013021 overheating Methods 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
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Abstract
Description
12:第1導体板
14:第2導体板
16:封止体
18:導体スペーサ
22:第1半導体素子
22c:第1半導体素子の信号電極
24:第2半導体素子
24c:第2半導体素子の信号電極
26:第3半導体素子
26c:第3半導体素子の信号電極
32:第1電力端子
34:第2電力端子
36:第1信号端子群(又はそれに含まれる信号端子)
38:第2信号端子群(又はそれに含まれる信号端子)
40:ボンディングワイヤ
A、K:温度信号電極
G:制御信号電極
SE、KE:電流信号電極
TA1、TK1:温度信号端子
TG1:第1制御信号端子
TG2:第2制御信号端子
TG3:第3制御信号端子
TS1、TE1:第1電流信号端子
TS2、TE2:第2電流信号端子
TS3、TE2:第3電流信号端子
Claims (10)
- 第1半導体素子と、
第1信号端子群と、
前記第1信号端子群から間隔を空けて配置されている第2信号端子群と、
を備え、
前記第1半導体素子は、前記第1半導体素子に対する制御信号が入力される制御信号電極と、前記第1半導体素子の温度に対応する信号を出力するための温度信号電極と、を有し、
前記温度信号電極は、前記第1信号端子群に含まれる温度信号端子に接続されており、
前記制御信号電極は、前記第2信号端子群に含まれる第1制御信号端子に接続されている、
半導体装置。 - 前記第1半導体素子は、前記第1半導体素子に流れる電流に対応する信号を出力するための電流信号電極をさらに有し、
前記電流信号電極は、前記第2信号端子群に含まれる第1電流信号端子に接続されている、請求項1に記載の半導体装置。 - 前記第1半導体素子の一方側に隣接する第2半導体素子をさらに備え、
前記第2半導体素子は、前記第2半導体素子に対する制御信号が入力される制御信号電極を有し、
前記第2半導体素子の前記制御信号電極は、前記第1信号端子群に含まれる第2制御信号端子に接続されており、
前記第1信号端子群は、前記温度信号端子と前記第2制御信号端子との間に、他の信号端子をさらに有する、請求項1又は2に記載の半導体装置。 - 前記第2半導体素子は、前記第2半導体素子に流れる電流に対応する信号を出力するための電流信号電極をさらに有し、
前記第2半導体素子の前記電流信号電極は、前記第1信号端子群に含まれるとともに、前記温度信号端子と前記第2制御信号端子との間に位置する第2電流信号端子に接続されている、請求項3に記載の半導体装置。 - 前記温度信号端子と前記第2制御信号端子は、前記第1信号端子群の両端に分かれて配置されている、請求項3又は4に記載の半導体装置。
- 前記第1半導体素子及び前記第2半導体素子を封止する封止体をさらに備え、
前記温度信号端子は、前記封止体内で前記第1半導体素子に向けて屈曲又は湾曲する部分を有し、
前記第2制御信号端子は、前記封止体内で前記第2半導体素子に向けて屈曲又は湾曲する部分を有し、
前記温度信号端子の前記屈曲又は湾曲する部分と、前記第2制御信号端子の前記屈曲又は湾曲する部分は、互いに異なる方向へ屈曲又は湾曲している、請求項3から5のいずれか一項に記載の半導体装置。 - 前記第2半導体素子は、前記第2半導体素子の温度に対応する信号を出力するための温度信号電極をさらに有し、
前記第2半導体素子の前記温度信号電極は、いかなる信号端子にも接続されていない、請求項3から6のいずれか一項に記載の半導体装置。 - 前記第1半導体素子の他方側に隣接する第3半導体素子をさらに備え、
前記第3半導体素子は、前記第3半導体素子に対する制御信号が入力される制御信号電極を有し、
前記第3半導体素子の前記制御信号電極は、前記第2信号端子群に含まれる第3制御信号端子に接続されている、請求項3から7のいずれか一項に記載の半導体装置。 - 前記第2信号端子群は、前記第1制御信号端子と前記第3制御信号端子との間に、他の信号端子をさらに有する、請求項8に記載の半導体装置。
- 第1半導体素子と、
前記第1半導体素子の一方側に隣接する第2半導体素子と、
前記第1半導体素子の他方側に隣接する第3半導体素子と、
五つの信号端子を有する第1信号端子群と、
前記第1信号端子群から間隔を空けて配置されているとともに、六つの信号端子を有する第2信号端子群と、
を備え、
前記第1半導体素子、前記第2半導体素子及び前記第3半導体素子の各々は、自己に対する制御信号が入力される制御信号電極と、自己の温度に対応する信号を出力するための二つの温度信号電極と、自己に流れる電流に対応する信号を出力するための二つの電流信号電極とを有し、
前記第1半導体素子の前記二つの温度信号電極は、前記第1信号端子群に含まれる二つの温度信号端子に接続されており、
前記第1半導体素子の前記制御信号電極は、前記第2信号端子群に含まれる第1制御信号端子に接続されており、
前記第1半導体素子の前記二つの電流信号電極は、前記第2信号端子群に含まれるとともに、前記第1制御信号端子に隣接する二つの第1電流信号端子に接続されており、
前記第2半導体素子の前記二つの温度信号電極は、いかなる信号端子にも接続されておらず、
前記第2半導体素子の前記制御信号電極は、前記第1信号端子群に含まれる第2制御信号端子に接続されており、
前記第2半導体素子の前記二つの電流信号電極は、前記第1信号端子群に含まれるとともに、前記第2制御信号端子と前記二つの温度信号端子との間に位置する二つの第2電流信号端子に接続されており、
前記第3半導体素子の前記二つの温度信号電極は、いかなる信号端子にも接続されておらず、
前記第3半導体素子の前記制御信号電極は、前記第2信号端子群に含まれるとともに、前記二つの第1電流信号端子に隣接する第3制御信号端子に接続されており、
前記第3半導体素子の前記二つの電流信号電極は、前記第2信号端子群に含まれるとともに、前記第3制御信号端子に隣接する二つの第3電流信号端子に接続されている、
半導体装置。
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