JP6855804B2 - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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- JP6855804B2 JP6855804B2 JP2017006256A JP2017006256A JP6855804B2 JP 6855804 B2 JP6855804 B2 JP 6855804B2 JP 2017006256 A JP2017006256 A JP 2017006256A JP 2017006256 A JP2017006256 A JP 2017006256A JP 6855804 B2 JP6855804 B2 JP 6855804B2
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Description
特許文献1 特開2007−305772号公報
Claims (15)
- 第1パッドを有する半導体素子と、
第2パッドを有するフレーム部材と、
銅および銀の少なくとも一方を含み、前記第1パッドおよび前記第2パッドを接続する接続部材と、
意図的に硫黄を添加しない樹脂組成物で形成されており、前記半導体素子、前記フレーム部材および前記接続部材を封止する封止部と
を備え、
前記第2パッドの上面の算術平均粗さが、前記第1パッドの算術平均粗さより大きい半導体装置。 - 第1パッドを有する半導体素子と、
第2パッドを有するフレーム部材と、
銅および銀の少なくとも一方を含み、前記第1パッドおよび前記第2パッドを接続する接続部材と、
意図的に硫黄を添加しない樹脂組成物で形成されており、前記半導体素子、前記フレーム部材および前記接続部材を封止する封止部と
を備え、
前記フレーム部材の表面の算術平均粗さが、前記第1パッドの算術平均粗さよりも小さい半導体装置。 - 前記第2パッドの上面の算術平均粗さが0.03μm以上である
請求項1または2に記載の半導体装置。 - 前記フレーム部材の表面の算術平均粗さが、0.01μm以上である
請求項1から3のいずれか一項に記載の半導体装置。 - 前記封止部の前記樹脂組成物は、意図的にハロゲンを添加していない
請求項1から4のいずれか一項に記載の半導体装置。 - 前記封止部の前記樹脂組成物におけるNH4イオンの含有量が、120℃且つ100時間の抽出条件のイオンクロマト分析において、0より大きく55ppm以下である
請求項1から5のいずれか一項に記載の半導体装置。 - 前記封止部の前記樹脂組成物における硫黄の含有量が、NH4イオンの含有量より少ない
請求項1から6のいずれか一項に記載の半導体装置。 - 前記半導体素子は、前記第1パッドの周囲にポリイミドで形成されている保護部を有する
請求項1から7のいずれか一項に記載の半導体装置。 - 前記接続部材が銅を含み、
前記第1パッドの硬度が、前記接続部材の硬度より低く、前記接続部材の硬度の1/3より高い
請求項1から8のいずれか一項に記載の半導体装置。 - 前記第1パッドが銅を含む
請求項9に記載の半導体装置。 - 前記半導体素子は、前記第1パッドの下方に設けられたバリアメタルを有する
請求項1から10のいずれか一項に記載の半導体装置。 - 前記フレーム部材が銅で形成されている
請求項1から11のいずれか一項に記載の半導体装置。 - 前記第1パッドの上面における粗さ曲線の最大断面高さが0.2μm以上である
請求項1から12のいずれか一項に記載の半導体装置。 - 前記第1パッドの上面の算術平均粗さが0.1μm以下である
請求項1から13のいずれか一項に記載の半導体装置。 - 第1パッドを有する半導体素子と、第2パッドを有するフレーム部材とを備える半導体装置を製造する製造方法であって、
前記第2パッドの上面の算術平均粗さを、前記第1パッドの算術平均粗さより大きくする段階と、
前記半導体素子の前記第1パッドと、前記フレーム部材の前記第2パッドとを、銅および銀の少なくとも一方を含む接続部材で接続する段階と、
意図的に硫黄を添加しない樹脂組成物で、前記半導体素子、前記フレーム部材および前記接続部材を封止する段階と
を備える製造方法。
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