CN108336036A - 半导体装置及半导体装置的制造方法 - Google Patents

半导体装置及半导体装置的制造方法 Download PDF

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Publication number
CN108336036A
CN108336036A CN201711210913.6A CN201711210913A CN108336036A CN 108336036 A CN108336036 A CN 108336036A CN 201711210913 A CN201711210913 A CN 201711210913A CN 108336036 A CN108336036 A CN 108336036A
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pad
frame parts
semiconductor element
semiconductor device
connecting component
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CN201711210913.6A
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CN108336036B (zh
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安田贵弘
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Fuji Electric Co Ltd
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Fuji Electric Co Ltd
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Abstract

本发明提供一种半导体装置及半导体装置的制造方法，其提高半导体装置的可靠性。提供一种半导体装置，其具备：具有第一焊盘的半导体元件；具有第二焊盘的框架部件；含有铜及银中的至少一者并且连接第一焊盘及第二焊盘的连接部件；和由不含硫的树脂组合物形成并且包封半导体元件、框架部件及连接部件的包封部，第一焊盘的上表面的算术平均粗糙度为0.02μm以上。第二焊盘的上表面的算术平均粗糙度可以大于第一焊盘的算术平均粗糙度。树脂组合物的硫的含有量可以少于NH4离子的含有量。

Description

半导体装置及半导体装置的制造方法
技术领域
本发明涉及一种半导体装置及半导体装置的制造方法。
背景技术
以往，公知有利用引线等连接部件连接半导体芯片和引线框架，并利用树脂进行包封的半导体装置(例如，参照专利文献1)。
专利文献1：日本特开2007-305772号公报
发明内容
技术问题
半导体装置优选具有高可靠性。
技术方案
在本发明的一个方式中，提供一种半导体装置，其具备：半导体元件，其具有第一焊盘；框架部件，其具有第二焊盘；连接部件，其连接第一焊盘及第二焊盘；和包封部，其包封半导体元件、框架部件及连接部件。连接部件可以含有铜及银中的至少一者。包封部可以由不含硫的树脂组合物形成。第一焊盘的上表面的算术平均粗糙度为0.02μm以上。
第二焊盘的上表面的算术平均粗糙度可以大于第一焊盘的上表面的算术平均粗糙度。框架部件的表面的算术平均粗糙度可以小于第一焊盘的算术平均粗糙度。第二焊盘的上表面的算术平均粗糙度可以为0.03μm以上。框架部件的表面的算术平均粗糙度可以为0.01μm以上。
包封部的树脂组合物可以不含卤素。在120℃且100小时的提取条件的离子色谱分析中，包封部的树脂组合物中的NH4离子的含有量可以大于0且为55ppm以下。包封部的树脂组合物中的硫的含有量可以少于NH4离子的含有量。
半导体元件可以在第一焊盘的周围具有由聚酰亚胺形成的保护部。连接部件可以含有铜。第一焊盘的硬度可以低于连接部件的硬度，并高于连接部件的硬度的1/3。
第一焊盘可以含有铜。半导体元件可以具有设置于第一焊盘的下方的势垒金属。框架部件可以由铜形成。
第一焊盘的上表面的粗糙度曲线的最大截面高度可以为0.2μm以上。第一焊盘的上表面的算术平均粗糙度可以为0.1μm以下。
在本发明的第二方式中，提供一种制造半导体装置的制造方法，所述半导体装置具备：具有第一焊盘的半导体元件；和具有第二焊盘的框架部件。制造方法可以具备使半导体元件的第一焊盘的上表面的算术平均粗糙度为0.02μm以上的步骤。制造方法可以具备利用含有铜及银中的至少一者的连接部件将半导体元件的第一焊盘与框架部件的第二焊盘连接的步骤。制造方法可以具备利用不含硫的树脂组合物包封半导体元件、框架部件及连接部件的步骤。
制造方法可以具备使第二焊盘的上表面的算术平均粗糙度大于第一焊盘的算术平均粗糙度的步骤。制造方法可以具备利用树脂组合物包封半导体元件、框架部件及连接部件的步骤，所述树脂组合物是在120℃且100小时的提取条件的离子色谱分析中，NH4离子的含有量大于0且为55ppm以下的树脂组合物。
上述发明的概要没有列举本发明的全部特征。这些特征组的子组合也是本发明。
附图说明
图1是表示本发明的实施方式的半导体装置100的一个例子的剖视图。
图2是表示XY面中的第一框架部件30、半导体元件10、第二框架部件50、及连接部件60的配置例的图。
图3是表示第一焊盘12、第二焊盘52及连接部件60的图。
图4是放大半导体元件10的端部附近的剖视图。
图5是表示半导体装置100的其他构成例的俯视图。
图6是示意地表示连接部件60及固定部62的截面的显微镜照片的图。
图7是示意地表示连接部件60及固定部62的截面的显微镜照片的图。
图8是表示进行高温施加试验的情况下的连接部件60及第一焊盘12中的电阻增加率的图。
图9是表示包封部80中的NH4离子的含有量与包封部80的剥离不良的发生率之间的关系的图。
图10是表示本发明的实施方式的制造方法的一个例子的流程图。
图11是表示制造方法的其他例的流程图。
符号说明
10 半导体元件
12 第一焊盘
14 焊盘
16 保护部
18 焊盘
20 上表面
22 端部
24 区域
30 第一框架部件
34 端部
40 元件固定部
50 第二框架部件
52 第二焊盘
54 端部
60 连接部件
62、64 固定部
63 裂缝
80 包封部
90 半导体基板
91 层间绝缘膜
92 第一势垒金属层
93 第二势垒金属层
94 氮化膜
95 聚酰亚胺膜
100 半导体装置
具体实施方式
以下，通过发明的实施方式对本发明进行说明，但以下的实施方式不限定专利权利要求中的发明。另外，在实施方式中所说明的特征的全部组合未必都是本发明的技术方案所必须的。
图1是表示本发明的实施方式的半导体装置100的一个例子的剖视图。半导体装置100具有半导体元件10、第一框架部件30、第二框架部件50、连接部件60及包封部80。包封部80由树脂形成，包封半导体元件10、第一框架部件30、第二框架部件50及连接部件60。本例的第一框架部件30及第二框架部件50从包封部80局部露出。连接部件60整体被包封部80包封。半导体元件10整体也可以被包封部80包封。
本例的半导体元件10是形成有绝缘栅双极型晶体管(IGBT)、MOSFET或二极管等的半导体芯片。在本例中，将与半导体元件10的主表面平行的面中彼此垂直的方向设为X轴方向及Y轴方向，将垂直于半导体元件10的主表面的方向设为Z轴方向。半导体元件10的主表面是指，半导体元件10的表面中的面积最大的面。在本例中，半导体元件10的主表面是与第一框架部件30相对的下表面、及与该下表面相反侧的上表面。需要说明的是，本说明书中的上、下等方向是指相对的方向，未必与重力方向的上、下方向、或者安装半导体装置100时的上、下方向一致。
半导体元件10利用焊料等元件固定部40固定在第一框架部件30的上表面。第一框架部件30由铜或其他金属等导电材料形成。在半导体元件10的下表面可以设置有经由元件固定部40与第一框架部件30电连接的电极。第一框架部件30具有从包封部80露出的端部34。端部34可以与外部装置电连接。
半导体元件10具有设置于上表面的第一焊盘12。第一焊盘12由铜、铝、或其他金属等导电材料形成。第一焊盘12可以具有均匀的材料组成，也可以层叠材料组成不同的多个层。第一焊盘12中的任一层可以是电镀层。第一焊盘12的下表面与形成于半导体元件10的晶体管或二极管等元件电连接。
第二框架部件50由铜或其他金属等导电材料形成。第二框架部件50可以由与第一框架部件30相同的材料形成。第二框架部件50具有从包封部80露出的端部54。端部54可以与外部装置电连接。
第二框架部件50具有设置于上表面的第二焊盘52。第二焊盘52可以具有均匀的材料组成，也可以层叠材料组成不同的多个层。第二焊盘52中的任一层可以是电镀层。第二焊盘52与第二框架部件50电连接。第二焊盘52在第二框架部件50中，设置在距第一框架部件30最近的位置。
连接部件60含有铜及银中的至少一者作为材料，连接第一焊盘12及第二焊盘52。本例的连接部件60是引线，一个端部与第一焊盘12连接，另一个端部与第二焊盘52连接。连接部件60和各焊盘通过固定部62及固定部64固定。固定部62及固定部64是球焊键合的球部、和/或楔焊键合的楔部等。连接部件60可以是铜引线，也可以是银引线，还可以是含有铜或银的合金引线。
通过以含有铜及银中的任一者的方式形成连接部件60，与铝或金的引线相比，能够提高高温施加时的可靠性。例如，在车载用的半导体装置中，存在周围温度变为高温的情况，但是能够提高该用途中的可靠性。
本例的包封部80由不含硫的树脂组合物形成。作为一个例子，包封部80包含主剂(例如环氧树脂)、固化剂(例如酚醛树脂)、无机填充剂、硅烷偶联剂。另外，也可以包含脱模剂、粘合赋予剂、固化催化剂、颜料、阻燃剂、低应力剂、离子捕捉剂。因为在连接部件60含有铜或银，所以如果在包封部80中含有硫，则有腐蚀连接部件60的可能性。相对于此，通过在包封部80不含硫，能够抑制连接部件60的腐蚀。因此，能够提高连接部件60的高温施加时的可靠性，并且也能够抑制腐蚀。
不含硫是指，有意识地不添加硫。可以在包封部80包含不可避免地添加的少量的硫。例如，在150℃、100小时的提取条件下的离子色谱分析中，从包封部80提取的硫为100ppm以下。在该条件下提取的硫可以是70ppm以下，也可以是50ppm以下。
需要说明的是，通常，硫作为用于确保粘合性的粘合赋予剂而含有。因此，在本例中，优选防止因不含硫而使包封部80的粘合性降低、特别是产生热循环的第一焊盘12和连接部件60的附近处的粘合性降低。因此，在本例中，将第一焊盘12的上表面的算术平均粗糙度Ra1设为0.02μm以上。另外，可以将第一焊盘12的粗糙度曲线的最大截面高度Rt设为0.2μm以上。最大截面高度Rt可以是0.3μm以上。算术平均粗糙度及最大截面高度由例如JIS标准规定。这样，通过将第一焊盘12的上表面的算术平均粗糙度Ra1及最大截面高度Rt设为一定值以上，不仅能够提高第一焊盘12与连接部件60的连接可靠性，还能够维持它们附近的第一焊盘12与包封部80的连接可靠性。
如上所述，根据半导体装置100，能够提高高温施加时的连接部件60的可靠性，抑制包封部80对连接部件60的腐蚀，并且提高第一焊盘12与连接部件60的连接可靠性，也维持第一焊盘12与包封部80的连接可靠性。另外，与使用金引线的情况相比，也能够降低成本。需要说明的是，第二焊盘52的上表面的算术平均粗糙度Ra2为0.03μm以上。
图2是表示XY面中的第一框架部件30、半导体元件10、第二框架部件50、及连接部件60的配置例的图。本例的半导体装置100具有彼此分离的多个第二框架部件50。各第二框架部件50具有经由连接部件60与半导体装置100的任一焊盘连接的第二焊盘52。另外，各第二框架部件50具有向包封部80的外部露出的端部54。
可以在第二框架部件50中的任一者流通较大的电流。例如任一个第二框架部件50与半导体元件10的发射电极(或源电极)等连接。其他任一个第二框架部件50可以流通较小的电流。任一个第二框架部件50可以与半导体元件10的栅电极等连接。另外，任一个第二框架部件50可以与半导体元件10的电流传感用电极、温度传感用电极等连接，也可以与设置于半导体元件10的控制电路的电极连接。
本例的第一框架部件30具有向包封部80的外部露出的多个端部34。可以在第一框架部件30流通较大的电流。例如第一框架部件30经由元件固定部40与半导体元件10的集电极(或漏电极)等连接。
在本例的半导体元件10中，IGBT等功率半导体和控制用的集成电路设置于同一芯片。本例的第一焊盘12是在功率半导体流通主电流的电极。半导体元件10可以具有功率半导体的栅极焊盘等其他焊盘14。焊盘14也经由连接部件60与任一个第二框架部件50连接，但是在图2中省略图示。在第一焊盘12及焊盘14的周围具有由聚酰亚胺形成的保护部16。第一焊盘12及焊盘14的上表面的至少一部分没有被保护部16覆盖而露出。在第一焊盘12及焊盘14的上表面的没有被保护部16覆盖的部分连接有连接部件60。
另外，半导体元件10可以具有与控制用的集成电路等连接的焊盘18。焊盘18经由连接部件60与任一个第二框架部件50连接。
图3是表示第一焊盘12、第二焊盘52及连接部件60的图。在图3中，表示一个连接部件60，但是第一焊盘12及第二焊盘52可以利用多个连接部件60连接。
第一焊盘12具有图2所示的至少一部分没有被保护部16覆盖的上表面20。在上表面20的一部分，第一焊盘12与连接部件60连接。为了提高第一焊盘12与连接部件60的可靠性、及第一焊盘12与包封部80的可靠性，上表面20的第一焊盘12的算术平均粗糙度Ra1为0.02μm以上。需要说明的是，算术平均粗糙度Ra1可以为0.035μm以上，也可以为0.05μm以上。另外，第一焊盘12的粗糙度曲线的最大截面高度Rt可以为0.2μm以上。需要说明的是，最大截面高度Rt可以为0.35μm以上，也可以为0.5μm以上。算术平均粗糙度Ra1可以使用整个上表面20的测定值，也可以使用一部分的测定值。第一焊盘12的算术平均粗糙度Ra1及最大截面高度Rt可以使用没有被固定部62覆盖的整个区域的测定值，也可以使用该区域的一部分的测定值。
作为一个例子，第一焊盘12的算术平均粗糙度Ra1及最大截面高度Rt可以使用上表面20的端部22与连接部件60的中间的区域24处的测定值。例如，在端部22附近、或者连接部件60附近的算术平均粗糙度Ra1或最大截面高度Rt的偏差大的情况下，通过使用区域24处的算术平均粗糙度Ra1或最大截面高度Rt，能够降低测定误差。区域24可以是在X轴方向、Y轴方向分别为上表面20的长度的一半以下，也可以为1/4以下，还可以为1/10以下。
需要说明的是，在存在多个与第二焊盘52连接的第一焊盘12的情况下，至少一个第一焊盘12具有上述算术平均粗糙度Ra1。由此，能够提高该第一焊盘12与连接部件60的连接可靠性。在半导体装置100，整个第一焊盘12优选具有上述算术平均粗糙度Ra1。同样地，至少一个第一焊盘12可以具有上述最大截面高度Rt，整个第一焊盘12优选具有上述最大截面高度Rt。
第二焊盘52的上表面的算术平均粗糙度Ra2为0.03μm以上。第二焊盘52的算术平均粗糙度Ra2可以使用整个上表面的测定值，也可以使用一部分的测定值。第二焊盘52的算术平均粗糙度Ra2可以使用没有被固定部64覆盖的整个区域的测定值，也可以使用该区域的一部分的测定值。
由此，通过将第二焊盘52的表面设为一定值以上的粗糙度，与第一焊盘12相同地，不仅能够提高第二焊盘52与连接部件60的连接可靠性，还能够维持它们附近的第二焊盘52与包封部80的连接可靠性。
需要说明的是，第二焊盘52的算术平均粗糙度Ra2可以大于第一焊盘12的算术平均粗糙度Ra1。Ra2可以比Ra1大10％以上，也可以大20％以上，还可以大50％以上。第一焊盘12形成在半导体元件10之上，相对于此，第二焊盘52形成在第二框架部件50之上。例如，第二焊盘52通过镀银等直接形成于第二框架部件50的上表面。
通常，如果算术平均粗糙度过大，则因接触面积的增大和/或晶粒边界的脆性化而使耐湿性降低，可能很难确保可靠性。在此，形成有第二焊盘52的第二框架部件50是例如金属板，相对于此，形成有第一焊盘12的部件是半导体元件10，谋求半导体元件针对耐湿性确保进一步的耐性。因此，可以使即使表面变粗相对可靠性也不易降低的第二焊盘52的算术平均粗糙度大于第一焊盘12的算术平均粗糙度。由此，能够实现耐湿性和连接可靠性两者，能够实现更高的产品可靠性。需要说明的是，具体而言，第一焊盘12的算术平均粗糙度Ra1可以为0.2μm以下，也可以为0.1μm以下。同样地，第二焊盘52的算术平均粗糙度Ra2可以为0.3μm以下。
半导体元件10由硅等较易开裂的材料形成。因此，如果在将连接部件60连接到第一焊盘12的情况下施加很大的力，则有可能在半导体元件10产生裂纹等。特别是，在连接部件60为铜引线等硬部件的情况下，该问题变得显著。因此，在将连接部件60连接于第一焊盘12的情况下，优选以较小的力将连接部件60按压并连接到第一焊盘12。在此，如果在连接时将连接部件60按压到第一焊盘12的力很小，则第一焊盘12与连接部件60的连接可靠性可能降低。相对于此，不仅是第二焊盘52，如上所述地还将第一焊盘12的上表面设为一定值以上的粗糙度，从而能够确保第一焊盘12与连接部件60的连接可靠性。
另外，第一焊盘12可以由含有铜的材料形成。作为一个例子，第一焊盘12由AlSiCu或AlCu形成。通过使第一焊盘12含有铜，能够提高第一焊盘12的硬度。因此，在连接连接部件60时，能够保护第一焊盘12。
第一焊盘12的硬度可以低于连接部件60的硬度，且高于连接部件60的硬度的1/3。通过使第一焊盘12的硬度为一定值以上，能够抑制将连接部件60固定于第一焊盘12的情况下给第一焊盘12带来的损伤。第一焊盘12的硬度可以高于连接部件60的硬度的1/2。能够根据包含于合金的材料的组成比来调整第一焊盘12的硬度。
另外，包封部80优选不含卤素。在连接部件60含有铜或银的情况下，如果在包封部80含有卤素，则容易在连接部件60、第一焊盘12及它们的合金部件产生腐蚀。相对于此，通过使包封部80不含卤素，能够抑制对连接部件60、第一焊盘12及它们的合金部件的腐蚀。
不含卤素是指，有意识地不添加卤素。在包封部80可以包含不可避免地添加的少量的卤素。例如，在150℃、100小时的提取条件下的离子色谱分析中，从包封部80提取的卤素为30ppm以下。在该条件下提取的卤素可以为20ppm以下，也可以为10ppm以下。
第一框架部件30及第二框架部件50可以由铜形成。第一框架部件30及第二框架部件50可以具有高于第一焊盘12的硬度。因为第一框架部件30及第二框架部件50没有直接与半导体等连接，所以能够较自由地选择材料。
第一框架部件30及第二框架部件50的上表面的算术平均粗糙度Ra3可以为0.01μm以上。第一焊盘12及第二焊盘52的算术平均粗糙度Ra1、Ra2大于算术平均粗糙度Ra3。通过增大第一焊盘12及第二焊盘52的算术平均粗糙度Ra1、Ra2、即、相对增大产生热循环的部位处的算术平均粗糙度Ra1、Ra2、且使第一框架部件30及第二框架部件50的上表面的算术平均粗糙度Ra3为一定值以上，从而维持构成包封部80的包封树脂的连接可靠性，能够防止包封树脂的剥离。需要说明的是，第一框架部件30及第二框架部件50的上表面的算术平均粗糙度Ra3可以在没有形成元件固定部40及第二焊盘52的区域处进行测定。
算术平均粗糙度Ra1、Ra2、Ra3和/或最大截面高度Rt只要在被包封部80包封后处于预定值、预定范围即可，但可以采用在连接连接部件60前或利用包封部80进行包封前实施测定，且测定结果满足预定值、预定范围的情况。同样地，算术平均粗糙度Ra1、Ra2、Ra3的比较只要在被包封部80包封后具有预定的大小关系即可，但可以在连接连接部件60前或利用包封部80进行包封前实施测定、比较。
图4是放大半导体元件10的端部附近的剖视图。半导体元件10具有由硅等形成的半导体基板90。在半导体基板90的上表面，选择地设置有由BPSG、PSG等硅酸盐玻璃形成的层间绝缘膜91。在层间绝缘膜91的上方设置有第一焊盘12。没有被层间绝缘膜91覆盖的半导体基板90的上表面与第一焊盘12电连接。
可以在第一焊盘12的下方形成一层以上的势垒金属层。在本例中，形成第一势垒金属层92及第二势垒金属层93。势垒金属层优选由硬度比第一焊盘12高的材料形成。第一势垒金属层92及第二势垒金属层93中的一者可以为Ti层，另一者可以为TiN层。由此，在将连接部件60与第一焊盘12连接的情况下，能够保护半导体基板90。
在层间绝缘膜91的上方，形成有作为保护部起作用的聚酰亚胺膜95。在聚酰亚胺膜95的下方可以形成氮化膜94。氮化膜94可以是例如SiN膜。氮化膜94形成于层间绝缘膜91之上。氮化膜94可以覆盖势垒金属层及第一焊盘12的侧面，也可以进一步覆盖第一焊盘12的上表面的一部分。
聚酰亚胺膜95形成于氮化膜94之上。聚酰亚胺膜95可以覆盖第一焊盘12的侧面，也可以进一步覆盖第一焊盘12的上表面的一部分。氮化膜94及聚酰亚胺膜95形成在没有被第一焊盘12的连接部件60及固定部62覆盖的部分。
聚酰亚胺膜95可以覆盖氮化膜94、层间绝缘膜91及半导体基板90的侧面。聚酰亚胺是有机材料，与树脂组合物(环氧树脂)之间的粘合性高。因此，通过在半导体元件10的周围设置聚酰亚胺膜95，能够提高包封部80与半导体元件10的粘合性。
其中，如果在包封部80的树脂组合物中含有大量NH4离子，则存在聚酰亚胺膜95与包封部80的结合变弱的情况。因此，在120℃且100小时的提取条件的离子色谱分析中，包封部80的树脂组合物中的NH4离子的含有量优选大于0ppm且为55ppm以下。需要说明的是，如果NH4离子过少，则存在树脂组合物的特性恶化的情况，因此，包含于包封部80的树脂组合物的NH4离子的含有量优选在上述提取条件下为20ppm以上。
包封部80的树脂组合物中的硫的含有量可以少于NH4离子的含有量。各成分的含有量利用同一提取条件的离子色谱分析进行检测。包封部80中的硫除了不可避免地含量以外，优选尽可能地少。相对于此，为了调整树脂组合物的特性，存在含有微量的NH4离子的情况。
图5是表示半导体装置100的其他构成例的俯视图。本例的半导体装置100在包封部80的内部具有两个半导体元件10-1、10-2。各半导体元件10与图1至图4中说明的半导体元件10相同。
另外，半导体装置100对应于两个半导体元件10具有两个第一框架部件30-1、30-2。两个第一框架部件30彼此分离地设置。各第一框架部件30与图1至图4中说明的第一框架部件30相同。另外，半导体装置100相对于各半导体元件10，具有多个第二框架部件50。在各第二框架部件50的端部设置有第二焊盘52。
相对于各第一焊盘12，设置一个以上连接部件60。各连接部件60与图1至图4所示的连接部件60相同。
图6是示意地表示连接部件60及固定部62的截面的显微镜照片的图。图6的连接部件60是含有铜的引线。在图6的例子中，在150℃、100小时的提取条件下的离子色谱分析中，在包封部80中含有120ppm以上的硫。图6表示在对半导体装置100进行175℃、3000小时的高温施加试验后的连接部件60及固定部62。在高温施加试验中，向连接部件60施加35V的电压。
如图6所示，在包封部80含有硫的情况下，在连接部件60及固定部62产生裂缝63。认为这是因为连接部件60的铜成分被包封部80的硫腐蚀。
图7是示意地表示连接部件60及固定部62的截面的显微镜照片的图。在图7的例子中，在150℃、100小时的提取条件下的离子色谱分析中，包含于包封部80的硫为100ppm以下。其他条件与图6的例子相同。
如图7所示，在包封部80不含硫的情况下，即使进行高温施加试验，在连接部件60及固定部62也不产生裂缝。认为这是因为在包封部80不含硫，所以没有腐蚀连接部件60的铜成分。由此，由于包封部80不含硫，所以即使使用铜作为连接部件60的材料，也能够提高高温可靠性。
但是，由于不含硫，所以存在包封部80与第一焊盘12、第二焊盘52、第一框架部件30、第二框架部件50的连接可靠性降低的情况。如上所述，通过使这些第一焊盘12、第二焊盘52、第一框架部件30及第二框架部件50的算术平均粗糙度Ra1、Ra2、Ra3为一定值以上，能够维持与包封部80的连接可靠性。
图8是表示进行了高温施加试验的情况下的连接部件60及第一焊盘12中的电阻增加率的图。在图8中，与图6及图7的例子相同地，表示在包封部80含有硫的例子、不含硫的例子。如图8所示，在包封部80含有硫的情况下，如果持续高温施加试验，则连接部件60及第一焊盘12中的电阻增加。认为这是因为如图6所示那样地腐蚀连接部件60。另一方面，在包封部80中不含硫的情况下，即使长时间地进行高温施加试验，连接部件60及第一焊盘12中的电阻也不会增加。
图9是表示包封部80中的NH4离子的含有量与包封部80的剥离不良的发生率之间的关系的图。包封部80的剥离不良是指，从聚酰亚胺膜95剥离包封部80的至少一部分，而导致产生间隙的状态。图9中的NH4离子的含有量利用120℃且100小时的提取条件的离子色谱分析进行检测。
如图9所示，以NH4离子的含有量为47ppm为边界，剥离不良的发生率急剧上升。并且，如果NH4离子的含有量为70ppm以上，则几乎全部产生剥离不良。因此，NH4离子的含有量为55ppm以下，更优选为50ppm以下，进一步优选为47ppm以下。需要说明的是，在离子色谱分析中，存在温度及时间的条件越大，提取的对象成分的含有量越增大的情况。因此，在比较两种含有量的情况下，优选在同一提取条件下的离子色谱分析中进行检测。
图10是表示本发明的实施方式的制造方法的一个例子的流程图。本例的制造方法制造具备半导体元件10和第二框架部件50的半导体装置100，所述半导体元件10具有第一焊盘12，所述第二框架部件50具有第二焊盘52。半导体装置100是图1至图9中说明的任一方式的半导体装置100。
在步骤S200中，调整半导体元件10的第一焊盘12和第二框架部件50的第二焊盘52中的至少一者的上表面的粗糙度。通过蚀刻等处理，能够调整各焊盘的上表面的粗糙度。通过控制各焊盘的制造条件，可以调整各焊盘的上表面的粗糙度。
在步骤S200中，可以使第一焊盘12的上表面的算术平均粗糙度Ra1为0.02μm以上。另外，在步骤S200中，可以使第二焊盘52的上表面的算术平均粗糙度Ra2大于第一焊盘12的算术平均粗糙度Ra1。另外，在步骤S200中，可以使第一焊盘12的上表面的算术平均粗糙度Ra1为0.02μm以上，且使第二焊盘52的上表面的算术平均粗糙度Ra2大于第一焊盘12的算术平均粗糙度Ra1。
在步骤S202中，利用含有铜及银中的至少一者的连接部件60连接第一焊盘12和第二焊盘52。连接部件60可以通过固定部62及固定部64固定于第一焊盘12及第二焊盘52。本例的半导体元件10固定于第一框架部件30的上表面。
在步骤S204中，利用不含硫的树脂组合物，包封半导体元件10、第一框架部件30、第二框架部件50及连接部件60，而形成包封部80。在步骤S204中，在注入树脂组合物的模具的内部的预定位置配置有半导体元件10、第一框架部件30、第二框架部件50及连接部件60的状态下，向模型注入树脂组合物。通过这样的方法，能够制造焊盘与连接部件60的连接可靠性得到提高的半导体装置100。
图11是表示制造方法的其他例子的流程图。本例的制造方法具有与图10所示的步骤S202相同的工序。在本例的制造方法中，在步骤S202前，可以进行步骤S200，也可以不进行。
本例的制造方法代替图10所示的步骤S204，具有步骤S206。在步骤S206中，采用在120℃且100小时的提取条件的离子色谱分析中，NH4离子的含有量大于0且为55ppm以下的树脂组合物，除了该点以外，与步骤S204相同。需要说明的是，步骤S206中的树脂组合物的硫的含有量可以少于NH4离子的含有量。通过这样的方法，能够制造产品可靠性高的半导体装置100。
以上，利用实施方式对本发明进行了说明，但是本发明的技术范围不限于上述实施方式所记载的范围。本领域技术人员可以知晓在上述实施方式中，能够追加多种变更或改良。从专利权利要求的记载可知，追加了这种变更或改良的方式也包含在本发明的技术范围内。

Claims (20)

1.一种半导体装置，其特征在于，具备：
半导体元件，其具有第一焊盘；
框架部件，其具有第二焊盘；
连接部件，其含有铜及银中的至少一者，并连接所述第一焊盘及所述第二焊盘；和
包封部，其由不含硫的树脂组合物形成，并包封所述半导体元件、所述框架部件及所述连接部件，
所述第一焊盘的上表面的算术平均粗糙度为0.02μm以上。
2.如权利要求1所述的半导体装置，其特征在于，
所述第二焊盘的上表面的算术平均粗糙度大于所述第一焊盘的上表面的算术平均粗糙度。
3.一种半导体装置，其特征在于，具备：
半导体元件，其具有第一焊盘；
框架部件，其具有第二焊盘；
连接部件，其含有铜及银中的至少一者，并连接所述第一焊盘及所述第二焊盘；和
包封部，其由不含硫的树脂组合物形成，并包封所述半导体元件、所述框架部件及所述连接部件，
所述第二焊盘的上表面的算术平均粗糙度大于所述第一焊盘的算术平均粗糙度。
4.如权利要求1至3中任一项所述的半导体装置，其特征在于，
所述框架部件的表面的算术平均粗糙度小于所述第一焊盘的算术平均粗糙度。
5.如权利要求1至4中任一项所述的半导体装置，其特征在于，
所述第二焊盘的上表面的算术平均粗糙度为0.03μm以上。
6.如权利要求1至5中任一项所述的半导体装置，其特征在于，
所述框架部件的表面的算术平均粗糙度为0.01μm以上。
7.如权利要求1至6中任一项所述的半导体装置，其特征在于，
所述包封部的所述树脂组合物不含卤素。
8.如权利要求1至7中任一项所述的半导体装置，其特征在于，
在120℃且100小时的提取条件的离子色谱分析中，所述包封部的所述树脂组合物中的NH4离子的含有量大于0且为55ppm以下。
9.如权利要求1至8中任一项所述的半导体装置，其特征在于，
所述包封部的所述树脂组合物中的硫的含有量少于NH4离子的含有量。
10.如权利要求1至9中任一项所述的半导体装置，其特征在于，
所述半导体元件在所述第一焊盘的周围具有由聚酰亚胺形成的保护部。
11.如权利要求1至10中任一项所述的半导体装置，其特征在于，
所述连接部件含有铜，
所述第一焊盘的硬度低于所述连接部件的硬度，且高于所述连接部件的硬度的1/3。
12.如权利要求11所述的半导体装置，其特征在于，
所述第一焊盘含有铜。
13.如权利要求1至12中任一项所述的半导体装置，其特征在于，
所述半导体元件具有设置于所述第一焊盘的下方的势垒金属。
14.如权利要求1至13中任一项所述的半导体装置，其特征在于，
所述框架部件由铜形成。
15.如权利要求1至14中任一项所述的半导体装置，其特征在于，
所述第一焊盘的上表面中的粗糙度曲线的最大截面高度为0.2μm以上。
16.如权利要求1至15中任一项所述的半导体装置，其特征在于，
所述第一焊盘的上表面的算术平均粗糙度为0.1μm以下。
17.一种半导体装置，其特征在于，具备：
半导体元件，其具有第一焊盘；
框架部件，其具有第二焊盘；
连接部件，其含有铜及银中的至少一者，并连接所述第一焊盘及所述第二焊盘；以及
包封部，其由树脂组合物形成，所述树脂组合物是在120℃且100小时的提取条件的离子色谱分析中，NH4离子的含有量大于0且为55ppm以下的树脂组合物，所述包封部包封所述半导体元件、所述框架部件及所述连接部件。
18.一种半导体装置的制造方法，其特征在于，是制造具备半导体元件和框架部件的半导体装置的制造方法，所述半导体元件具有第一焊盘，所述框架部件具有第二焊盘，所述制造方法具备：
使所述半导体元件的所述第一焊盘的上表面的算术平均粗糙度为0.02μm以上的步骤；
利用含有铜及银中的至少一者的连接部件，连接所述半导体元件的所述第一焊盘和所述框架部件的所述第二焊盘的步骤；和
利用不含硫的树脂组合物包封所述半导体元件、所述框架部件及所述连接部件的步骤。
19.一种半导体装置的制造方法，其特征在于，是制造具备半导体元件和框架部件的半导体装置的制造方法，所述半导体元件具有第一焊盘，所述框架部件具有第二焊盘，所述制造方法具备：
使所述第二焊盘的上表面的算术平均粗糙度大于所述第一焊盘的算术平均粗糙度的步骤；
利用含有铜及银中的至少一者的连接部件，连接所述半导体元件的所述第一焊盘和所述框架部件的所述第二焊盘的步骤；和
利用不含硫的树脂组合物包封所述半导体元件、所述框架部件及所述连接部件的步骤。
20.一种半导体装置的制造方法，其特征在于，是制造具备半导体元件和框架部件的半导体装置的制造方法，所述半导体元件具有第一焊盘，所述框架部件具有第二焊盘，所述制造方法具备：
利用含有铜及银中的至少一者的连接部件，连接所述半导体元件的所述第一焊盘和所述框架部件的所述第二焊盘的步骤；和
利用树脂组合物包封所述半导体元件、所述框架部件及所述连接部件的步骤，所述树脂组合物是在120℃且100小时的提取条件的离子色谱分析中，NH4离子的含有量大于0且为55ppm以下的树脂组合物。
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