CN104205315A - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN104205315A
CN104205315A CN201380015827.3A CN201380015827A CN104205315A CN 104205315 A CN104205315 A CN 104205315A CN 201380015827 A CN201380015827 A CN 201380015827A CN 104205315 A CN104205315 A CN 104205315A
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China
Prior art keywords
copper cash
electrode pad
epoxy resin
semiconductor device
semiconductor element
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Granted
Application number
CN201380015827.3A
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CN104205315B (zh
Inventor
伊藤慎吾
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Sumitomo Bakelite Co Ltd
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Sumitomo Bakelite Co Ltd
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Publication of CN104205315A publication Critical patent/CN104205315A/zh
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Publication of CN104205315B publication Critical patent/CN104205315B/zh
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Abstract

本发明提供一种耐湿性和高温保存特性优异的半导体装置。半导体装置具有包括芯片焊盘部和内引线部的引线框作为基板，该半导体装置还具有：搭载于芯片焊盘部的半导体元件；设置于半导体元件的电极焊盘；将设置于基板的内引线部和电极焊盘连接的铜线；和封装半导体元件和铜线的封装树脂。在深度方向上距离与铜线的接合面至少3μm以下的范围内的电极焊盘的区域，含有离子化倾向比铝小的金属作为主要成分，铜线中的硫含量相对于铜线整体为15ppm以上100ppm以下。

Description

半导体装置
技术领域
本发明涉及半导体装置。
背景技术
近年来，作为代替金线的接合线，提出了铜线。
通常，作为铜线的原料的铜在除去杂质并进行精制后使用。但是，这样的高纯度的铜存在加工成导线时或者加工成铜线之后容易被氧化的问题。因此，使用铜线的接合容易引发不良情况，特别是在高温保存时，具有容易劣化的倾向。
作为使用铜线接合的技术，例如有专利文献1所记载的技术。
在专利文献1中记载了一种利用铜的接合线将半导体元件的电极和引线连接导出的半导体装置，在接合线与电极的接合界面形成有铜－铝系金属间化合物。根据专利文献1的记载，通过在铜球与铝电极的界面形成CuAl2层，形成铜球与电极密接的状态，因此从耐蚀性等方面考虑，能够提高可靠性。
现有技术文献
专利文献
专利文献1：日本特开昭62－265729号公报
发明内容
发明所要解决的课题
但是，通过进一步对铜线与铝焊盘的接合部进行热处理，Cu从铜线向CuAl2层扩散，形成Cu组成比比CuAl2高的合金层。根据本发明的发明人的见解可知，Cu组成比比CuAl2高的合金层容易被卤素腐蚀，容易断线。
本发明是鉴于上述情况而完成的，其目的在于提高铜线与电极焊盘的连接可靠性，并提高耐湿性和高温保存特性。
用于解决课题的技术方案
根据本发明，提供一种半导体装置，其具有：
搭载于基板的半导体元件；
设置于上述半导体元件的电极焊盘；
将设置于上述基板的连接端子和上述电极焊盘连接的铜线；和
封装上述半导体元件和上述铜线的封装树脂，
在深度方向上距离与所述铜线的接合面至少3μm以下的范围内的上述电极焊盘的区域含有离子化倾向比铝小的金属作为主要成分，
上述铜线中的硫含量相对于上述铜线整体为15ppm以上100ppm以下。
发明效果
根据本发明，能够提供使铜线与电极焊盘的连接可靠性提高、耐湿性和高温保存特性优异的半导体装置。
附图说明
图1是示意性地表示实施方式的半导体装置的截面图。
具体实施方式
以下，利用附图对本发明的实施方式进行说明。其中，在所有的附图中，对相同的构成要素标注相同的符号，适当地省略说明。
图1是示意性地表示本实施方式的半导体装置10的截面图。该半导体装置10具有包括芯片焊盘部3a和内引线部3b的引线框3作为基板，该半导体装置10还具有：搭载于芯片焊盘部3a的半导体元件1；设置于半导体元件1的电极焊盘6；将设置于基板的连接端子(内引线部3b)和电极焊盘6连接的铜线4；和封装半导体元件1和铜线4的封装树脂5。
作为半导体元件1，没有特别限定，例如可以列举集成电路、大规模集成电路、固体摄像元件等。
作为引线框3，没有特别限制，可以代替引线框3使用电路基板。具体而言，可以使用双列直插式封装体(DIP)、带引线的塑料芯片载体(PLCC)、四面扁平封装体(QFP)、小外形四面扁平封装体(LQFP)、J形引线小外形封装体(SOJ)、薄型小外形封装体(TSOP)、薄型四面扁平封装体(TQFP)、带载封装体(TCP)、球栅阵列(BGA)、芯片尺寸封装体(CSP)、四方扁平无引脚封装体(QFN)、小外形无引线封装体(SON)、引线框·BGA(LF－BGA)、模塑阵列封装体类型的BGA(MAP－BGA)等现有公知的半导体装置中使用的引线框或电路基板。
半导体元件1可以是多个半导体元件叠层而成的元件。该情况下，第1段的半导体元件可以隔着膜粘合剂、热固型粘合剂等的芯片粘结材料固化体2与芯片焊盘部3a粘合。第2段以后的半导体元件可以通过绝缘性的膜粘合剂等依次叠层。然后，在各层的适当的位置，预先利用前工序形成电极焊盘6。
在本发明中，在深度方向上距离与铜线4的接合面一定距离的电极焊盘6的区域，可以含有离子化倾向比Al小的金属。这里，所谓“接合面”，在形成电极焊盘后在电极焊盘表面自然生成的氧化膜或有意形成的保护膜不包括在本发明的接合面的概念中，“接合面”是指：在接合时，以取得与导线实质上导通为目的而形成的电极焊盘表面。另外，电极焊盘6的所谓“深度方向”是指：相对于铜线4与电极焊盘6的接合面，在垂直方向上远离铜线4的方向。
所谓“在深度方向上距离与铜线4的接合面至少3μm以下的范围”，当电极焊盘6的厚度小于3μm时，表示电极焊盘6整体；当电极焊盘6的厚度为3μm以上时，表示从与铜线4的接合面到深度3μm的区域。另外，电极焊盘6的表面可以含有离子化倾向比Al小的金属作为主要成分。电极焊盘6中，至少在深度方向上距离与铜线4接合的表面3μm以下、优选1nm以上3μm以下的区域使用含有离子化倾向比Al小的金属作为主要成分的物质，但更优选电极焊盘6整体含有离子化倾向比Al小的金属作为主要成分。
在本发明中，所谓“含有离子化倾向比Al小的金属作为主要成分”，优选电极焊盘6的一定区域中的“离子化倾向比Al小的金属”的含量为90质量％以上，更优选为95质量％以上。具体而言，电极焊盘6中的离子化倾向比Al小的金属的含量相对于电极焊盘6整体优选为90质量％以上，更优选为98质量％以上，进一步优选为99.5质量％以上。
离子化倾向比Al小的金属优选选自镍、金、钯、银、铜和铂，更优选选自金、钯和铜。它们可以使用一种，也可以选择两种以上使用。
电极焊盘6可以通过如下方法制作：例如形成通常的钛系阻挡层，再使用将离子化倾向比Al小的金属蒸镀、溅射、电镀、无电解镀等现有的半导体元件用的Al焊盘的形成方法等来制作。
作为电极焊盘6中的离子化倾向比Al小的金属成分以外的成分，由于在上述焊盘形成工序中采用的蒸镀、溅射、电镀、无电解镀等而不可避免地混入的杂质是允许的。
另外，本发明的电极焊盘6，如上所述，距离与铜线4接合的表面至少3μm以下、优选1nm以上3μm以下的深度方向的区域，只要以上述优选范围含有离子化倾向比Al小的金属即可，电极焊盘6可以由离子化倾向比Al小的金属1层形成，或者也可以为被离子化倾向比Al小的金属层覆盖的、由一层或多层构成的金属层。例如，电极焊盘6可以是被离子化倾向比Al小的金属层覆盖的Al焊盘。其中，所谓“覆盖”既可以是连续的，也可以是一部分。
所谓“在深度方向上距离与铜线4的接合面至少3μm以下的范围内的电极焊盘6的区域含有离子化倾向比铝小的金属作为主要成分”是指：在该电极焊盘6的区域中的至少一部分中，含有离子化倾向比铝小的金属作为主要成分，并不限于区域整体。
铜线4用于将引线框3和搭载于引线框3的芯片焊盘部3a的半导体元件1电连接。在铜线4的表面自然地或工艺上不可避免地形成有氧化膜。在本发明中，铜线4也包括具有这样在铜线表面形成的氧化膜的铜线。
铜线4的直径在30μm以下，进一步优选在25μm以下且在15μm以上。如果为该范围，铜线前端的球形状稳定，能够提高接合部分的连接可靠性。另外，由于铜线自身的硬度，能够降低导线的塑变。
铜线4中的铜的含量相对于从铜线4中除去硫和氯后的铜线4整体，优选为99.9～100质量％，更优选为99.99～99.999质量％。
铜线4通过在作为芯线的铜中掺杂0.001质量％～0.1质量％的Ba、Ca、Sr、Be、Al或稀土金属，能够进一步改善接合强度。
在铜线4与电极焊盘6的接合部中，在铜线4的前端形成有铜球4a。
从不需要原料铜的复杂的精制工序、并且抑制氧化进行良好的导线接合的观点出发，铜线4中的硫含量相对于铜线4整体优选为15ppm以上，更优选为20ppm以上。另一方面，从抑制接合面的腐蚀，得到实用且良好的连接性的观点出发，硫含量相对于铜线4整体优选为100ppm以下，更优选为80ppm以下的含量。通过使硫含量为15ppm以上100ppm以下、更优选为20ppm以上80ppm以下的范围，能够提高半导体装置的高温保存特性。
从不需要原料铜的复杂的精制工序、并且抑制氧化进行良好的导线接合的观点出发，铜线4中的氯含量相对于铜线4整体优选为5ppm以上，更优选为10ppm以上。另一方面，从抑制接合面的腐蚀，得到实用且良好的连接性的观点出发，氯含量相对于铜线4整体优选为100ppm以下，更优选为80ppm以下的含量。通过使氯含量为5ppm以上100ppm以下、更优选为10ppm以上80ppm以下的范围，能够提高半导体装置的高温保存特性。
封装树脂5是固化型树脂的固化物，具体而言，更优选使含有(A)环氧树脂和(B)固化剂的环氧树脂组合物固化而得到的固化物。
在本发明中，电极焊盘6与铜线4的接合面由离子化倾向比铝小的金属构成，因此不管封装树脂5中的氯化物(Cl)离子浓度如何，都能够提高连接可靠性。但是，封装树脂5中的Cl离子浓度优选为500ppm以下，更优选为10～300ppm，进一步优选为20～250ppm的范围。
封装树脂5中的Cl离子浓度可以通过如下方法定量：例如将作为固化物的封装树脂5微粉碎，在5g的粉碎品中加入50ml的蒸馏水，进行125℃、20小时的处理，对处理后的上清液进行离子色谱分析而进行定量。
另外，作为其它例子，使用低压传递成型机，以模具温度175℃、注入压力7.5MPa、固化时间2分钟的条件，将形成封装树脂5之前的环氧树脂组合物成形为的试验片，进行175℃、8小时的后固化，使用由此得到的固化物，进行微粉碎后同样进行测定，由此也能够测定封装树脂5中的Cl离子浓度。
作为(A)环氧树脂，是在1个分子内具有2个以上环氧基的单体、低聚物、聚合物全部，其分子量、分子结构没有特别限定，例如可以列举联苯型环氧树脂、双酚A型环氧树脂、双酚F型环氧树脂、四甲基双酚F型环氧树脂等双酚型环氧树脂、茋型环氧树脂；苯酚线型酚醛型环氧树脂、甲酚线型酚醛型环氧树脂等线型酚醛型环氧树脂；三酚甲烷型环氧树脂、烷基改性三酚甲烷型环氧树脂等多官能环氧树脂；具有亚苯基骨架的苯酚芳烷基型环氧树脂、具有亚联苯基骨架的苯酚芳烷基型环氧树脂等芳烷基型环氧树脂；二羟基萘型环氧树脂、将二羟基萘的二聚体缩水甘油醚化后得到的环氧树脂等萘酚型环氧树脂；异氰脲酸三缩水甘油酯、异氰脲酸单烯丙基二缩水甘油酯等含三嗪核的环氧树脂；二环戊二烯改性苯酚型环氧树脂等有桥环状烃化合物改性苯酚型环氧树脂，它们可以单独使用1种，也可以并用2种以上。
另外，上述联苯型环氧树脂、双酚A型环氧树脂、双酚F型环氧树脂、四甲基双酚F型环氧树脂等双酚型环氧树脂、茋型环氧树脂优选具有结晶性的树脂。
作为环氧树脂(A)，优选使用含有选自下述式(1)所示的环氧树脂、下述式(2)所示的环氧树脂和下述式(3)所示的环氧树脂中的至少1种的环氧树脂。
〔式(1)中，Ar1表示亚苯基或亚萘基，在Ar1为亚萘基时，缩水甘油醚基可以与α位、β位中的任意位置结合，Ar2表示亚苯基、亚联苯和亚萘基中的任一个基团，R5和R6分别独立地表示碳原子数1～10的烃基，g为0～5的整数，h为0～8的整数，n3表示聚合度，其平均值为1～3。〕
〔式(2)中，多个存在的R9分别独立地表示氢原子或碳原子数1～4的烃基，n5表示聚合度，其平均值为0～4。〕
〔式(3)中，多个存在的R10和R11分别独立地表示氢原子或碳原子数1～4的烃基，n6表示聚合度，其平均值为0～4。〕
(A)环氧树脂的含量相对于环氧树脂组合物整体优选为3质量％以上，更优选为5质量％以上，进一步优选为8质量％以上。由此能够降低因粘度上升导致的丝线破断的危险。另外，环氧树脂(A)的含量相对于环氧树脂组合物整体优选为18质量％以下，更优选为13质量％以下，进一步优选为11质量％以下。这样，能够降低因吸水率增加导致的耐湿可靠性下降等的危险。
作为(B)固化剂，例如可以大致分为加聚型的固化剂、催化剂型的固化剂、缩合型的固化剂这三类。
作为加聚型的固化剂，例如可以列举二亚乙基三胺(DETA)、三亚乙基四胺(TETA)、间苯二甲胺(MXDA)等脂肪族多胺、二氨基二苯基甲烷(DDM)、间苯二胺(MPDA)、二氨基二苯砜(DDS)等芳香族多胺，除此以外还可以列举包括双氰胺(DICY)、有机酸二酰肼的多胺化合物；包括六氢邻苯二甲酸酐(HHPA)、甲基四氢邻苯二甲酸酐(MTHPA)等脂环族酸酐、偏苯三酸酐(TMA)、均苯四酸酐(PMDA)、二苯甲酮四甲酸(BTDA)等芳香族酸酐等的酸酐；线型酚醛树脂、聚乙烯基苯酚等酚醛树脂系固化剂；多硫化物、硫酯、硫醚等聚硫醇化合物；异氰酸酯预聚物、嵌段化异氰酸酯等异氰酸酯化合物；含有羧酸的聚酯树脂等有机酸类等。
作为催化剂型的固化剂，例如可以列举苄基二甲基胺(BDMA)、2,4,6－三(二甲基氨基甲基)苯酚(DMP－30)等叔胺化合物；2－甲基咪唑、2－乙基－4－甲基咪唑(EMI24)等咪唑化合物；BF3配位化合物等路易斯酸等。
作为缩合型的固化剂，例如可以列举甲阶型酚醛树脂；含有羟甲基的尿素树脂之类的尿素树脂；含有羟甲基的三聚氰胺树脂之类的三聚氰胺树脂等。
在这些树脂中，从耐燃性、耐湿性、电特性、固化性、保存稳定性等的平衡的观点出发，优选酚醛树脂系固化剂。酚醛树脂系固化剂是指在一个分子内具有2个以上酚羟基的单体、低聚物、聚合物全部，其分子量、分子结构没有特别限定，例如可以列举苯酚线型酚醛树脂、甲酚线型酚醛树脂、双酚线型酚醛树脂等线型酚醛树脂；三酚甲烷型酚醛树脂等多官能型酚醛树脂；萜烯改性酚醛树脂、二环戊二烯改性酚醛树脂等改性酚醛树脂；具有亚苯基骨架和/或亚联苯基骨架的苯酚芳烷基树脂、具有亚苯基和/或亚联苯基骨架的萘酚芳烷基树脂等芳烷基型树脂；双酚A、双酚F等双酚化合物等，这些树脂可以单独使用1种，也可以并用2种以上。
作为(B)固化剂，优选使用选自下述式(4)所示的化合物中的至少1种的固化剂。
〔式(4)中，Ar3表示亚苯基或亚萘基，在Ar3为亚萘基时，羟基可以与α位、β位中的任意位置结合，Ar4表示亚苯基、亚联苯基和亚萘基中的任一个基团，R7和R8分别独立地表示碳原子数1～10的烃基，i为0～5的整数，j为0～8的整数，n4表示聚合度，其平均值为1～3。〕
(B)固化剂的含量在环氧树脂组合物中优选为2质量％以上，更优选为3质量％以上，进一步优选为6质量％以上。这样，能够得到充分的流动性。另外，(B)固化剂的含量在环氧树脂组合物中优选为15质量％以下，更优选为11质量％以下，进一步优选为8质量％以下。这样，能够降低因吸水率增加导致的耐湿可靠性下降等的危险。
另外，作为(B)固化剂使用酚醛树脂系固化剂时，作为环氧树脂与酚醛树脂系固化剂的配合比率，优选总环氧树脂的环氧基数(EP)与总酚醛树脂系固化剂的酚羟基数(OH)的当量比(EP)/(OH)为0.8～1.3。当量比在该范围内时，引起环氧树脂组合物的固化性降低或树脂固化物的物性降低等的危险小。
另外，在形成封装树脂5的环氧树脂组合物中可以含有(C)填充材料以及根据需要的(D)中和剂和/或(E)固化促进剂。
作为(C)填充材料，可以使用通常的半导体封装用环氧树脂组合物所使用的材料。例如，可以列举熔融球状二氧化硅、熔融破碎二氧化硅、结晶二氧化硅、滑石、氧化铝、钛白、氮化硅等无机填充材料，有机硅粉末、聚乙烯粉末等有机填充材料，其中，特别优选熔融球状二氧化硅。这些填充材料可以单独使用1种，也可以并用2种以上。另外，作为(C)填充材料的形状，为了抑制环氧树脂组合物的熔融粘度升高、进一步提高填充材料的含量，优选尽可能为正球状、且粒度分布宽。另外，填充材料可以利用偶联剂进行表面处理。另外，可以根据需要利用环氧树脂或酚醛树脂等预先对填充材料进行处理后使用，作为处理的方法，有：使用溶剂进行混合后将溶剂除去的方法；直接添加到填充材料中，使用混合机进行混合处理的方法等。
从环氧树脂组合物的填充性、半导体装置的可靠性的观点出发，(C)填充材料的含量相对于环氧树脂组合物整体优选为65质量％以上，更优选为75质量％以上，进一步优选为80质量％以上。这样，能够获得低吸湿性、低热膨胀性，因此能够降低耐湿可靠性变得不充分的危险。另外，在考虑成形性时，(C)填充材料的含量相对于环氧树脂组合物整体优选为93质量％以下，更优选为91质量％以下，进一步优选为86质量％以下。这样，能够降低流动性下降、在成形时出现填充不良等、或者由于高粘度化导致半导体装置内的导线塑变等的不良情况的危险。
(D)中和剂可以使用将由于作为环氧树脂组合物或其固化体的封装树脂5的加热产生的酸性的腐蚀性气体中和的物质。由此，能够抑制铜线4与半导体元件1的电极焊盘6的接合部的腐蚀(氧化劣化)。具体而言，作为(D)中和剂，可以使用碱性金属盐，特别是选自含钙元素的化合物、含铝元素的化合物和含镁元素的化合物中的至少1种。
作为上述含钙元素的化合物，可以列举碳酸钙、硼酸钙、硅酸钙等，其中，从杂质的含量、耐水性和低吸水率的观点出发，优选碳酸钙，更优选通过二氧化碳反应法合成的沉降性碳酸钙。
作为上述含铝元素的化合物，可以列举氢氧化铝、勃姆石等。其中，优选氢氧化铝，在氢氧化铝中，更优选利用2阶段拜耳法合成的低钠氢氧化铝。
作为上述含镁元素的化合物，可以列举水滑石、氧化镁、碳酸镁等，其中，从杂质的含量和低吸水率的观点出发，优选下述式(5)所示的水滑石。
MaAlb(OH)2a+3b－2c(CO3)c·mH2O    (5)
〔式(5)中，M表示至少包括Mg的金属元素，a、b、c为分别满足2≤a≤8、1≤b≤3、0.5≤c≤2的数，m为0以上的整数。〕
作为具体的水滑石，可以列举Mg6Al2(OH)16(CO3)·mH2O、Mg3ZnAl2(OH)12(CO3)·mH2O、Mg4.3Al2(OH)12.6(CO3)·mH2O等。
作为(D)中和剂的含量，优选相对于环氧树脂组合物整体为0.01～10质量％。通过将(D)中和剂的含量设定为0.01质量％以上，能够充分发挥添加中和剂的效果，能够更可靠地防止铜线4与电极焊盘6的接合部的腐蚀(氧化劣化)，能够使半导体装置的高温保存特性提高。另外，通过将(D)中和剂的含量设定为10质量％以下，能够使吸湿率降低，由此存在耐焊裂缝性提高的倾向。特别是在作为防腐剂使用碳酸钙或水滑石时，从与上述同样的观点出发，其含量优选相对于环氧树脂组合物整体为0.05～2质量％。
(E)固化促进剂只要是能够促进环氧树脂的环氧基与固化剂(例如酚醛树脂系固化剂的酚羟基)的交联反应的物质即可，能够使用通常的半导体封装用环氧树脂组合物所使用的固化促进剂。例如，可以列举1,8－二氮杂双环(5,4,0)十一碳烯-7等的二氮杂双环烯烃及其衍生物；三苯基膦、甲基二苯基膦等有机膦类；2-甲基咪唑等咪唑化合物；四苯基鏻·四苯基硼酸酯等四取代鏻·四取代硼酸酯；膦化合物与醌化合物的加合物等，它们可以单独使用1种，也可以并用2种以上。
(E)固化促进剂的含量相对于环氧树脂组合物整体优选为0.05质量％以上，更优选为0.1质量％以上。这样，能够降低引起固化性下降的危险。另外，(E)固化促进剂的含量相对于环氧树脂组合物整体优选为1质量％以下，更优选为0.5质量％以下。这样，能够降低引起流动性下降的危险。
在用于形成封装树脂5的环氧树脂组合物中，可以根据需要进一步适当配合氢氧化锆等防铝腐蚀剂；氧化铋水合物等无机离子交换体；γ－环氧丙氧基丙基三甲氧基硅烷、3－巯基丙基三甲氧基硅烷、3－氨基丙基三甲氧基硅烷、环氧硅烷等偶联剂；碳黑、铁丹等着色剂；硅橡胶等低应力成分；巴西棕榈蜡等天然蜡、合成蜡、硬脂酸锌等高级脂肪酸及其金属盐类或石蜡等脱模剂；氢氧化铝、氢氧化镁、硼酸锌、钼酸锌、磷腈等阻燃剂、抗氧化剂等各种添加剂。
用于形成封装树脂5的环氧树脂组合物可以使用通过如下方法获得的组合物：例如利用混合机等在15℃～28℃将上述的各成分进行混合，之后，进一步将得到的混合物利用辊、捏合机、挤出机等混炼机进行熔融混炼、冷却后粉碎而得到的组合物等，根据需要适当调节分散度和/或流动性等而得到的组合物。
接着，对本实施方式的半导体装置10的制造方法的一个例子进行说明。
首先，通过公知的半导体制造工艺(主要是前工序)，形成到本发明的电极焊盘6的基底层，通过利用将离子化倾向比Al小的金属进行蒸镀、溅射、无电解镀等现有的半导体元件用的Al焊盘的形成方法，制作本发明的电极焊盘6。之后实施电极焊盘形成后的工艺。图的保护膜8由SiN等绝缘膜形成。接着，进一步通过公知的后工序工艺，将具有电极焊盘6的半导体元件1设置于引线框3上的芯片焊盘部3a，利用铜导线4将电极焊盘6与内引线3b导线接合。
接合例如以以下的顺序进行。首先，在铜线4的前端形成规定直径的铜球4a。接着，使铜球4a相对于电极焊盘6上表面实质上垂直地下降，一边使铜球4a与电极焊盘6接触，一边施加超声波振动。
由此，铜球4a的底部与电极焊盘6接触，形成接合面。
另外，引线框3的内引线部3b与半导体元件1可以通过导线的逆结合(wire reverse bonding)进行接合。在逆结合中，首先在半导体元件1的电极焊盘6上接合形成于铜线4的前端的球，切断铜线4，形成点焊用的凸点。接着，使形成于导线的前端的球与引线框3的经过金属镀的内引线部3b接合，与半导体元件的凸点进行点焊。利用逆结合时，与正结合相比，能够降低半导体元件1上的导线高度，因此能够降低半导体元件1的接合高度。
接着，利用传递模塑、压缩模塑、注射模塑等现有的成形方法，将固化型树脂(例如上述的环氧树脂组合物)固化成形，封装半导体元件1、铜线4和内引线3b，以80℃～200℃左右的温度、用10分钟～24小时左右的时间进行后固化。后固化更优选以150℃～200℃进行2～16小时。之后，可以将通过封装树脂5封装的半导体元件1搭载于电子机器等上。
根据这样制造的半导体装置，在制造工艺和使用时，即使向铜线4与电极焊盘6的接合部施加热量，Cu也不会从铜球4a扩散，因此不会在铜线4与电极焊盘6的接合部上形成腐蚀性高的CuAl合金层。另外，由于铜线4的硫含量相对于铜线4整体为15ppm以上100ppm以下，所以能够抑制氧化和腐蚀。因此，能够提供耐湿性和高温保存特性优异的半导体装置。
以上，参照附图对本发明的实施方式进行了说明，但这些是本发明的例示，也可以采用上述以外的各种构成。
实施例1
下面，基于实施例和比较例更具体地说明本发明，但本发明不限定于以下的实施例。
制造例1～4
使用混合器，以15～28℃将表1所示的各成分混合，接着以70℃～100℃进行辊混炼。冷却后进行粉碎，得到环氧树脂组合物。其中，表1中的各成分的详细信息如下。另外，表1中的单位为质量％。
＜(A)环氧树脂＞
EP－BA：NC3000P、日本化药株式会社制、环氧当量276、Cl离子浓度280ppm
EP－BA2：NC3000(高氯)、日本化药株式会社制、环氧当量275、Cl离子浓度6680ppm
＜(B)固化剂＞
HD－BA：MEH－7851SS、明和化成株式会社制、羟基当量203
＜(C)填充材料＞
溶融球状二氧化硅：FB－820、电气化学工业株式会社制、平均粒径26.5μm、105μm以上的颗粒1％以下
＜(D)中和剂＞
水滑石：DHT－4A(注册商标)(在上述式(5)中，a为4.3，b为2，c为1的水滑石)、协和化学工业株式会社制
＜(E)固化促进剂＞
三苯基膦(TPP)、北兴化学工业株式会社制
＜其他成分＞
偶联剂：环氧硅烷
着色剂：碳黑
脱模剂：巴西棕榈蜡
[表1]
通过以下的方法测定制造例1～4中得到的环氧树脂组合物的物性。将其结果表示在表1中。
＜旋流长度(SF)＞
使用低压传递成型机(Kohtaki Precision Machine Co.，Ltd生产，“KTS-15”)，在基于EMMI－1－66的旋流长度测定用模具中，以模具温度175℃、注入压力6.9MPa、固化时间120秒的条件，分别注入制造例1～4的环氧树脂组合物，测定流动长度(单位：cm)。
＜胶凝时间(GT)＞
在加热到175℃的热板上，使制造例1～4的环氧树脂组合物分别熔融，之后一边利用刮刀搅拌一边测定直到固化的时间。
＜氯化物离子(Cl)浓度的测定＞
使用低压传递成型机(Kohtaki Precision Machine Co.，Ltd生产，“KTS-15”)，以模具温度175℃、注入压力7.5MPa、固化时间2分钟的条件，形成的试验片。在175℃、8小时的后固化之后进行微粉碎，向5g的粉碎品中加入50ml的蒸馏水，加入到Teflon(注册商标)衬里的容器中，进行125℃、20小时的处理，通过离子色谱分析，对处理后的上清液进行Cl离子的定量。
实施例1～8、比较例1～3
将具有表2所示的电极焊盘的TEG(TEST ELEMENT GROUP)芯片(3.5mm×3.5mm)接合在352针BGA(基板为厚度0.56mm、双马来酰亚胺·三嗪树脂/玻璃布基板、封装体尺寸为30mm×30mm、厚度1.17mm)的芯片焊盘部，使用铜线a(铜纯度99.99质量％、直径25μm)以铜线间距80μm进行线接合，使得TEG芯片的电极焊盘与基板的电极焊盘形成菊花链连接。将其利用低压传递成形机(TOWA制“Y系列”)，以模具温度175℃、注入压力6.9MPa、固化时间2分钟的条件，如表2所示，使用制造例1～4中的任一种环氧树脂组合物进行封装成形，制作352针BGA封装体。将该封装体在175℃、4小时的条件下进行后固化，之后得到半导体装置。
其中，表2中，电极焊盘的详细信息如下。
Au：Au纯度99.9质量％的金焊盘(厚度1μm)
Cu：Cu纯度99.9质量％的铜焊盘(厚度1μm)
Al：Al纯度99.9质量％的铝焊盘(厚度1μm)
上述铜线a(铜纯度99.99质量％、直径25μm)的详细信息如下。
·铜线a
硫浓度(ppm)19ppm
氯浓度(ppm)15ppm
比较例4
除了使用下述的铜线b代替上述铜线a之外，与实施例1同样进行操作，得到半导体装置。
·铜线b
硫浓度(ppm)低于1ppm
氯浓度(ppm)低于1ppm
其中，铜线中的硫浓度、氯浓度通过辉光放电质量分析进行测定。
＜TEM分析＞
对于实施例1～8和比较例1～4的半导体装置，在大气中以175℃加热16小时，之后利用透射型电子显微镜(TEM)解析铜线与电极焊盘的接合部的结构。
在实施例1～8的半导体装置中，铜线与电极焊盘的接合面在实施例1～4中由金构成，在实施例5～8中由铜构成，在实施例1～8中，在铜线与电极焊盘之间未形成CuAl合金层，形成离子化倾向比Al小的金属与Cu的合金，或者没有看到合金层的形成。而在比较例1～3的半导体装置中，在铜线与铝焊盘之间形成CuAl合金层。该CuAl合金层由于形成Cu9Al4等容易腐蚀的合金层，所以可能导致可靠性降低。
另外，就比较例4而言，铜线中的硫含量比其他比较例少，虽然与比较例1～3的性能不同，但半导体装置的可靠性仍然比实施例差。
＜耐湿性和高温保存特性＞
对于实施例1～8、比较例1～4的半导体装置，进行了半导体装置的HAST(不饱和耐湿性试验)和HTSL(高温保存试验)。将其结果表示在表2中。
具体而言，HAST基于IEC68－2－66进行实施。试验条件是，将温度设为130℃或140℃，进行85％RH、施加电压20V、96小时的处理，调查10个封装体中产生不良的个数。
另外，就HTSL而言，将温度设为175℃，进行1000小时处理，调查10个封装体中产生不良的个数。
另外，在HAST和HTSL中，不良的判定使用制作的10个封装体进行评价，计数处理后的电阻值相对于初始电阻超过1.2倍的封装体的个数。
[表2]
如实施例1～8所示，使用硫浓度19ppm、氯浓度15ppm的铜线，由离子化倾向比Al小的金属构成的焊盘中，高温耐湿特性优异，特别是关于高温特性，不管形成封装树脂的环氧树脂组合物的种类如何，都能够得到良好的结果。对于金焊盘而言，即使由含有200ppm以上的Cl离子浓度的环氧树脂组合物形成封装树脂，也能够得到耐湿性和高温保存特性优异的半导体装置，特别令人满意。
该申请主张以2012年3月23日提出的日本专利申请特愿2012－068100为基础的优先权，在此引用其公开的全部内容。

Claims (5)

1.一种半导体装置，其特征在于，具有：
搭载于基板的半导体元件；
设置于所述半导体元件的电极焊盘；
将设置于所述基板的连接端子和所述电极焊盘连接的铜线；和
封装所述半导体元件和所述铜线的封装树脂，
在深度方向上距离与所述铜线的接合面3μm以下的范围内的所述电极焊盘的区域含有离子化倾向比铝小的金属作为主要成分，
所述铜线中的硫含量相对于所述铜线整体为15ppm以上100ppm以下。
2.如权利要求1所述的半导体装置，其特征在于：
所述铜线中的氯含量相对于所述铜线整体为5ppm以上100ppm以下。
3.如权利要求1或2所述的半导体装置，其特征在于：
所述电极焊盘含有离子化倾向比铝小的所述金属作为主要成分。
4.如权利要求1～3中任一项所述的半导体装置，其特征在于：
离子化倾向比铝小的所述金属选自镍、金、钯、银、铜和铂。
5.如权利要求1～4中任一项所述的半导体装置，其特征在于：
所述基板为引线框或电路基板。
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