JP2019161124A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2019161124A JP2019161124A JP2018048528A JP2018048528A JP2019161124A JP 2019161124 A JP2019161124 A JP 2019161124A JP 2018048528 A JP2018048528 A JP 2018048528A JP 2018048528 A JP2018048528 A JP 2018048528A JP 2019161124 A JP2019161124 A JP 2019161124A
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- Prior art keywords
- semiconductor module
- terminal
- semiconductor
- switching element
- plate
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- Inverter Devices (AREA)
Abstract
Description
20:第1半導体モジュール
22、62:モールド樹脂
24:第1半導体モジュールの高電位端子
25:第1半導体モジュールの中点端子
26:第1半導体モジュールの出力端子
28、29:第1信号端子群
30:第1スイッチング素子
32、42、52:第1半導体モジュールの下側放熱板
34、44、54:第1半導体モジュールの導体スペーサ
36、56:第1半導体モジュールの上側放熱板
40:第1ダイオード素子
50:第2スイッチング素子
60:第2半導体モジュール
64:第2半導体モジュールの低電位端子
65:第2半導体モジュールの中点端子
66:第2半導体モジュールの出力端子
68、69:第2信号端子群
70:第3スイッチング素子
72、92:第2半導体モジュールの下側放熱板
74、84、94:第2半導体モジュールの導体スペーサ
76、86、96:第2半導体モジュールの上側放熱板
80:第2ダイオード素子
90:第4スイッチング素子
C1、C2:平滑コンデンサ
Claims (1)
- 3レベルインバータ回路に用いられる半導体装置であって、
第1半導体モジュールと、第2半導体モジュールと、を備え、
前記第1半導体モジュールは、
直列接続された二つのスイッチング素子と、
前記二つの第1スイッチング素子の間にカソード電極が接続された第1ダイオード素子と、
前記二つの第1スイッチング素子の一方に接続された高電位端子と、
前記第1ダイオード素子のアノード電極に接続された中点端子と、
前記二つの第1スイッチング素子の他方に接続された出力端子と、を有し、
前記第2半導体モジュールは、
直列接続された二つの第2スイッチング素子と、
前記二つの第2スイッチング素子の間にアノード電極が接続された第2ダイオード素子と、
前記二つの第2スイッチング素子の一方に接続された低電位端子と、
前記第2ダイオード素子のカソード電極に接続された中点端子と、
前記二つの第2スイッチング素子の他方に接続された出力端子と、を有し、
前記第1半導体モジュールでは、前記高電位端子、前記中点端子及び前記出力端子が、この順序で配列されており、
前記第2半導体モジュールでは、前記低電位端子、前記中点端子及び前記出力端子が、この順序で配列されており、
前記第1半導体モジュールの前記中点端子及び前記第2半導体モジュールの前記中点端子は互いに接続されており、
前記第1半導体モジュールの前記出力端子及び前記第2半導体モジュールの前記出力端子は互いに接続されている、
半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018048528A JP7069885B2 (ja) | 2018-03-15 | 2018-03-15 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018048528A JP7069885B2 (ja) | 2018-03-15 | 2018-03-15 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019161124A true JP2019161124A (ja) | 2019-09-19 |
JP7069885B2 JP7069885B2 (ja) | 2022-05-18 |
Family
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JP2018048528A Active JP7069885B2 (ja) | 2018-03-15 | 2018-03-15 | 半導体装置 |
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JP (1) | JP7069885B2 (ja) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001168278A (ja) * | 1999-12-09 | 2001-06-22 | Toshiba Corp | パワー半導体モジュール及び電力変換装置 |
JP2005287267A (ja) * | 2004-03-31 | 2005-10-13 | Mitsubishi Electric Corp | 電力変換装置 |
WO2007113979A1 (ja) * | 2006-03-30 | 2007-10-11 | Mitsubishi Electric Corporation | 電力変換装置およびその組み立て方法 |
JP2015056925A (ja) * | 2013-09-10 | 2015-03-23 | 株式会社デンソー | 電力変換装置 |
-
2018
- 2018-03-15 JP JP2018048528A patent/JP7069885B2/ja active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001168278A (ja) * | 1999-12-09 | 2001-06-22 | Toshiba Corp | パワー半導体モジュール及び電力変換装置 |
JP2005287267A (ja) * | 2004-03-31 | 2005-10-13 | Mitsubishi Electric Corp | 電力変換装置 |
WO2007113979A1 (ja) * | 2006-03-30 | 2007-10-11 | Mitsubishi Electric Corporation | 電力変換装置およびその組み立て方法 |
US20090219696A1 (en) * | 2006-03-30 | 2009-09-03 | Mitsubishi Electric Corporation | Power conversion device and fabricating method for the same |
JP2015056925A (ja) * | 2013-09-10 | 2015-03-23 | 株式会社デンソー | 電力変換装置 |
US20160211741A1 (en) * | 2013-09-10 | 2016-07-21 | Denso Corporation | Power conversion device |
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