JP2013162019A - 半導体モジュール - Google Patents
半導体モジュール Download PDFInfo
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- JP2013162019A JP2013162019A JP2012024049A JP2012024049A JP2013162019A JP 2013162019 A JP2013162019 A JP 2013162019A JP 2012024049 A JP2012024049 A JP 2012024049A JP 2012024049 A JP2012024049 A JP 2012024049A JP 2013162019 A JP2013162019 A JP 2013162019A
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- semiconductor module
- snubber capacitor
- lead frame
- heat sink
- igbt
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
【解決手段】少なくとも2個のスイッチング素子10,11を直列接続し、その直列接続にスナバコンデンサ12A,12Bを並列接続した半導体モジュール1であって、スナバコンデンサ12A,12Bは正極側放熱板13と負極側放熱板14との間に挟持され、正極側放熱板13及び負極側放熱板14のいずれか一方の放熱板によってスナバコンデンサ12A,12Bが下方から保持される構造とすることを特徴とし、スイッチング素子10,11の実装方向とスナバコンデンサ12A,12Bの接続方向とを同方向とすると好適である。
【選択図】図1
Description
Claims (3)
- 少なくとも2個のスイッチング素子を直列接続し、該直列接続にスナバコンデンサを並列接続した半導体モジュールであって、
前記スナバコンデンサは、正極側放熱板と負極側放熱板との間に挟持され、
前記正極側放熱板及び前記負極側放熱板のいずれか一方の放熱板によって前記スナバコンデンサが下方から保持される構造とすることを特徴とする半導体モジュール。 - 前記正極側放熱板と前記負極側放熱板の少なくとも一方の放熱板が冷却器側と接触する面積又はスイッチング素子側と接触する面積を他方側と接触する面積よりも大きくすることを特徴とする請求項1に記載の半導体モジュール。
- 前記少なくとも2個のスイッチング素子の実装方向と前記スナバコンデンサの接続方向とを同方向とすることを特徴とする請求項1又は請求項2に記載の半導体モジュール。
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JP2012024049A JP5668707B2 (ja) | 2012-02-07 | 2012-02-07 | 半導体モジュール |
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JP2012024049A JP5668707B2 (ja) | 2012-02-07 | 2012-02-07 | 半導体モジュール |
Publications (2)
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JP2013162019A true JP2013162019A (ja) | 2013-08-19 |
JP5668707B2 JP5668707B2 (ja) | 2015-02-12 |
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JP2012024049A Expired - Fee Related JP5668707B2 (ja) | 2012-02-07 | 2012-02-07 | 半導体モジュール |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015037537A1 (ja) * | 2013-09-10 | 2015-03-19 | 独立行政法人産業技術総合研究所 | 電力変換回路および装置 |
JP2017183430A (ja) * | 2016-03-29 | 2017-10-05 | アイシン・エィ・ダブリュ株式会社 | スイッチング素子ユニット |
CN107871733A (zh) * | 2016-09-27 | 2018-04-03 | 三菱电机株式会社 | 半导体模块 |
WO2020152898A1 (ja) * | 2019-01-22 | 2020-07-30 | 株式会社日立製作所 | パワー半導体装置 |
KR20220145828A (ko) | 2020-02-25 | 2022-10-31 | 가부시키가이샤 시세이도 | 호스트기 및/또는 게스트기를 갖는 실록산 결합 함유 고분자 화합물을 포함하는 화장료 |
KR20220146471A (ko) | 2020-02-25 | 2022-11-01 | 가부시키가이샤 시세이도 | 호스트기 및/또는 게스트기를 갖는 실록산 결합 함유 고분자 화합물을 포함하는 수지 재료 |
DE112021001168B4 (de) | 2020-03-19 | 2023-10-12 | Rohm Co., Ltd. | Halbleiterbauteil |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008205380A (ja) * | 2007-02-22 | 2008-09-04 | Toyota Motor Corp | 半導体モジュール |
JP2010153527A (ja) * | 2008-12-25 | 2010-07-08 | Denso Corp | 半導体モジュール冷却装置 |
JP2012015453A (ja) * | 2010-07-05 | 2012-01-19 | Denso Corp | 半導体モジュールおよびその製造方法 |
JP2012115128A (ja) * | 2010-11-03 | 2012-06-14 | Denso Corp | スイッチングモジュール |
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2012
- 2012-02-07 JP JP2012024049A patent/JP5668707B2/ja not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008205380A (ja) * | 2007-02-22 | 2008-09-04 | Toyota Motor Corp | 半導体モジュール |
JP2010153527A (ja) * | 2008-12-25 | 2010-07-08 | Denso Corp | 半導体モジュール冷却装置 |
JP2012015453A (ja) * | 2010-07-05 | 2012-01-19 | Denso Corp | 半導体モジュールおよびその製造方法 |
JP2012115128A (ja) * | 2010-11-03 | 2012-06-14 | Denso Corp | スイッチングモジュール |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015037537A1 (ja) * | 2013-09-10 | 2015-03-19 | 独立行政法人産業技術総合研究所 | 電力変換回路および装置 |
JPWO2015037537A1 (ja) * | 2013-09-10 | 2017-03-02 | 国立研究開発法人産業技術総合研究所 | 電力変換回路および装置 |
US9774241B2 (en) | 2013-09-10 | 2017-09-26 | National Institute Of Advanced Industrial Science And Technology | Power conversion circuit and device |
JP2017183430A (ja) * | 2016-03-29 | 2017-10-05 | アイシン・エィ・ダブリュ株式会社 | スイッチング素子ユニット |
CN107871733B (zh) * | 2016-09-27 | 2020-06-16 | 三菱电机株式会社 | 半导体模块 |
JP2018056221A (ja) * | 2016-09-27 | 2018-04-05 | 三菱電機株式会社 | 半導体モジュール |
CN107871733A (zh) * | 2016-09-27 | 2018-04-03 | 三菱电机株式会社 | 半导体模块 |
DE102017216981B4 (de) | 2016-09-27 | 2022-10-06 | Mitsubishi Electric Corporation | Halbleitermodul |
WO2020152898A1 (ja) * | 2019-01-22 | 2020-07-30 | 株式会社日立製作所 | パワー半導体装置 |
JP2020120455A (ja) * | 2019-01-22 | 2020-08-06 | 株式会社日立製作所 | パワー半導体装置 |
CN113348554A (zh) * | 2019-01-22 | 2021-09-03 | 株式会社日立制作所 | 功率半导体装置 |
JP7290420B2 (ja) | 2019-01-22 | 2023-06-13 | 株式会社日立製作所 | パワー半導体装置 |
KR20220145828A (ko) | 2020-02-25 | 2022-10-31 | 가부시키가이샤 시세이도 | 호스트기 및/또는 게스트기를 갖는 실록산 결합 함유 고분자 화합물을 포함하는 화장료 |
KR20220146471A (ko) | 2020-02-25 | 2022-11-01 | 가부시키가이샤 시세이도 | 호스트기 및/또는 게스트기를 갖는 실록산 결합 함유 고분자 화합물을 포함하는 수지 재료 |
DE112021001168B4 (de) | 2020-03-19 | 2023-10-12 | Rohm Co., Ltd. | Halbleiterbauteil |
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