WO2020152898A1 - パワー半導体装置 - Google Patents

パワー半導体装置 Download PDF

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Publication number
WO2020152898A1
WO2020152898A1 PCT/JP2019/032960 JP2019032960W WO2020152898A1 WO 2020152898 A1 WO2020152898 A1 WO 2020152898A1 JP 2019032960 W JP2019032960 W JP 2019032960W WO 2020152898 A1 WO2020152898 A1 WO 2020152898A1
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Prior art keywords
power semiconductor
electrode conductor
semiconductor device
plane
conductor portion
Prior art date
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PCT/JP2019/032960
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English (en)
French (fr)
Inventor
誠仁 望月
英一 井出
仁徳 長崎
信太朗 田中
高志 平尾
順平 楠川
円丈 露野
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株式会社日立製作所
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Application filed by 株式会社日立製作所 filed Critical 株式会社日立製作所
Priority to EP19911869.6A priority Critical patent/EP3916782B1/en
Priority to CN201980088888.XA priority patent/CN113348554A/zh
Publication of WO2020152898A1 publication Critical patent/WO2020152898A1/ja

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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
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    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
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Definitions

  • the present invention relates to a power semiconductor device, and more particularly to a power semiconductor device used for a power conversion device that converts DC power into AC power.
  • the thickness of the capacitor is set to the thickness of the power semiconductor element portion. It is necessary to adjust the degree of freedom in design, and there is a limit to the size of the capacitors and the number of capacitors that can be used per power semiconductor device.
  • the problem to be solved by the present invention is to reduce the wiring inductance of a power semiconductor device equipped with a smoothing capacitor and to downsize it.
  • a power semiconductor device includes a power semiconductor circuit section, a plurality of smoothing capacitors, a positive electrode conductor section and a negative electrode conductor section that connect the power semiconductor circuit section and the plurality of smoothing capacitors, and the power semiconductor circuit section.
  • the plurality of smoothing capacitors, a sealing material that seals the positive electrode conductor portion and the negative electrode conductor portion, and the plurality of smoothing capacitors form a capacitor circuit portion sandwiched by the positive electrode conductor portion and the negative electrode conductor portion.
  • the power semiconductor circuit unit has a first exposed surface exposed from the encapsulant and a second exposed surface exposed from the encapsulant and opposite to the first exposed surface.
  • a plane overlapping the first exposed surface is defined as a first plane
  • a plane overlapping the second exposed surface is defined as a second plane
  • the capacitor circuit portion is defined in a space between the first plane and the second plane.
  • the positive electrode conductor portion or the negative electrode conductor portion is formed so as to fit therein, and forms a concave portion that houses a part of the plurality of smoothing capacitors.
  • the power semiconductor device including the smoothing capacitor can be downsized to reduce the wiring inductance.
  • FIG. 3 is a transparent plan view of the power semiconductor device 1 in which the sealing member 13 and the emitter-side ceramics substrate 36 are removed and the positive electrode conductor portion 31 and the negative electrode conductor portion 32 are penetrated to show the arrangement of the power semiconductor element and the capacitor 14. It is sectional drawing of the power semiconductor device 1 seen from the arrow direction a with respect to the plane S1 of FIG.
  • FIG. 9 is a perspective view showing a modified example in which a plurality of capacitors 14 are housed in a recess 41 formed in the positive electrode conductor portion 31.
  • FIG. 8 is an overall perspective view of a 6-in-1 power semiconductor device formed by combining the 2-in-1 power semiconductor devices 1 shown in FIGS. 1 to 7.
  • FIG. 6 is a cross-sectional view showing the manufacturing process of the power semiconductor device 1.
  • FIG. 6 is a cross-sectional view showing the manufacturing process of the power semiconductor device 1.
  • FIG. 6 is a cross-sectional view showing the manufacturing process of the power semiconductor device 1.
  • FIG. 6 is a cross-sectional view showing the manufacturing process of the power semiconductor device 1.
  • FIG. 6 is a cross-sectional view showing the manufacturing process of the power semiconductor device 1.
  • a power semiconductor device used in a vehicle-mounted power conversion device will be described below as an embodiment of the structure according to the present invention.
  • FIG. 1A is an overall perspective view of the power semiconductor device 1 according to the present embodiment viewed from one side.
  • FIG. 1B is an overall perspective view of the power semiconductor device 1 according to this embodiment as viewed from the other side.
  • FIG. 4 is a cross-sectional view of the power semiconductor device 1 as seen from the direction of arrow a with respect to the plane S1 of FIG.
  • FIG. 5 is a cross-sectional view of the power semiconductor device 1 viewed from the arrow direction b with respect to the plane S2 of FIG.
  • the power semiconductor device 1 includes a positive electrode terminal 21 and a negative electrode terminal 22 to which a DC voltage is applied, an AC output terminal 23 to output an AC voltage, and a control terminal 24 for transmitting a control signal for controlling the power semiconductor element. Equipped with.
  • the power semiconductor element is composed of the upper arm IGBT 10U and the upper arm diode 11U shown in FIG. 4, and the lower arm IGBT 10L and the lower arm diode 11L shown in FIG.
  • the sealing member 13 includes a power semiconductor element, a positive electrode conductor portion 31 and a negative electrode conductor portion 32, a collector side ceramics substrate 33, an emitter side ceramics substrate 36, a capacitor 14, Is sealed.
  • the sealing member 13 is made of an insulating resin or the like.
  • the positive electrode terminal 21 and the negative electrode terminal 22 protrude from one side surface of the sealing member 13 in the same direction.
  • the AC output terminal 23 and the control terminal 24 project in the same direction from the other side surface of the sealing member 13 opposite to the one side surface thereof.
  • the metal metallized portion 38 of the emitter-side ceramics substrate 36 is exposed from the main surface of the sealing member 13.
  • the metal metallized portion 35 of the collector-side ceramics substrate 33 is exposed from the main surface of the sealing member 13.
  • FIG. 2A is a circuit diagram of the power semiconductor device 1 according to this embodiment.
  • FIG. 2B is a circuit diagram of a power conversion device using the power semiconductor device 1 according to this embodiment.
  • the positive electrode conductor portion 31 is connected to the positive electrode side of the battery 5 and the capacitor 14 via the positive electrode terminal 21.
  • the negative electrode terminal portion 32 is connected to the battery 5 and the negative electrode side of the capacitor 14 via the negative electrode terminal 22.
  • the power semiconductor device 1 of the present embodiment has a 2-in-1 structure in which two arm circuits, an upper arm circuit and a lower arm circuit, are integrated into one module.
  • the power semiconductor device can be downsized.
  • the upper arm circuit includes an upper arm IGBT 10U and an upper arm diode 11U as a power semiconductor element for switching
  • the lower arm circuit includes a lower arm IGBT 10L and a lower arm diode 11L.
  • the electric system including the power conversion device includes a plurality of power semiconductor circuit units 2, a plurality of capacitors 14, a motor 4, and a battery 5.
  • the IGBT receives the drive signal and performs a switching operation to convert the DC power supplied from the battery 5 into three-phase AC power.
  • the L component (inductance) between the power semiconductor element and the capacitor 14 is reduced, the surge voltage can be suppressed and the breakdown voltage is improved.
  • the capacitance is changed from 2in1 to 6in1, the capacitor 14 is connected in parallel, so that the capacitance of the power semiconductor device increases.
  • FIG. 3 is a transparent plan view of the power semiconductor device 1 in which the sealing member 13 and the emitter-side ceramics substrate 36 are removed and the positive conductor portion 31 and the negative conductor portion 32 are transmitted to show the arrangement of the power semiconductor element and the capacitor 14. is there.
  • the arrows shown in FIG. 3 indicate the flow of current through the power semiconductor element to the positive electrode terminal 21 and the negative electrode terminal 22.
  • the plurality of capacitors 14 are arranged such that the arrangement direction of the positive electrode side electrode and the negative electrode side electrode of the capacitor 14 is parallel to the arrangement direction of the emitter electrode and collector electrode of the upper arm IGBT 10U. Will be placed.
  • the exposed portions of the metal metallized portions 35 and 38 shown in FIGS. 1A and 1B radiate the heat of the power semiconductor element, the positive electrode conductor portion 31, the negative electrode conductor portion 32, and the capacitor 14. ..
  • the power semiconductor circuit unit 2 includes an emitter-side ceramic substrate 36, a part of the negative electrode conductor 32, an IGBT and a diode, a part of the positive electrode conductor 31, and a collector side. And a ceramic substrate 33.
  • the emitter-side ceramics substrate 36 is composed of a metal metallized portion 38 that forms the heat radiation surface of the IGBT 10L and the diode 11L, and a metal circuit portion 37 that is connected to the negative electrode conductor portion 32 and the AC output terminal 23 via the solder 12. It
  • the collector-side ceramics substrate 33 has a metal metallized portion 35 that forms the heat radiation surface of the IGBT 10L and the diode 11L, and a metal circuit portion 34 that is connected to the positive electrode conductor portion 31, the AC output terminal 23, and the control terminal 24 via the solder 12.
  • the bonding wire 15 is a wire that connects the metal circuit portion 34 connected to the control terminal 24 and the control electrode of the IGBT 10L, and is composed of AI or the like.
  • the solder 12 is assumed to be a joining material obtained by melting and solidifying a metal, and a joining member such as a sintered material may be used. The use of the sintered material as the joining member has an effect of improving the yield and the assembling property.
  • the capacitor circuit unit 3 includes a part of the negative electrode conductor 32, the plurality of capacitors 14, and a part of the positive electrode conductor 31.
  • the vent portion 42 of the positive electrode conductor portion 31 is formed between the capacitor circuit portion 3 and the power semiconductor circuit portion 2.
  • the vent portion 42 formed in the positive electrode conductor portion 31 has an angle so as to be inclined with respect to a plane parallel to the arrangement direction of the plurality of capacitors 14.
  • the power semiconductor device 1 can be easily adjusted to the size of the discrete capacitor, which contributes to suppressing the size increase of the power semiconductor device 1 while improving the assemblability.
  • the surface of the metallized portion 38 exposed from the sealing member 13 is defined as a first exposed surface
  • the surface of the metallized portion 35 exposed from the sealing member 13 is defined as a second exposed surface.
  • a plane overlapping the first exposed surface is defined as a first plane F1
  • a plane overlapping the second exposed surface is defined as a second plane F2.
  • the capacitor circuit unit 3 is formed smaller than the space between the first plane F1 and the second plane F2. Further, the positive electrode conductor portion 31 and the negative electrode conductor portion 32 form a concave portion 41 for accommodating a part of each capacitor 14.
  • the recess 41 may be formed in either one of the positive electrode conductor portion 31 and the negative electrode conductor portion 32.
  • vent portion 42 can change the distance between the positive electrode conductor portion 31 and the negative electrode conductor portion 32, the degree of design freedom for mounting the capacitor 14 is increased, and a discrete type capacitor can be used.
  • the concave portion 41 in the positive electrode conductor portion 31 or the negative electrode conductor portion 32 the distance between the positive electrode conductor portion 31 and the negative electrode conductor portion 32 is narrowed and the inductance is reduced, so that the surge voltage is reduced and the breakdown voltage is improved.
  • the recess 41 facilitates positioning and mounting of the capacitor 14.
  • FIG. 6 is a cross-sectional view of a power semiconductor device according to another embodiment.
  • the capacitor circuit unit 3 includes a negative electrode conductor portion 32 that overlaps the first plane F1 and is exposed from the sealing member 13, and a positive electrode conductor portion 31 that overlaps the second plane F2 and that is exposed from the sealing member 13. With. Further, the positive electrode conductor portion 31 and the negative electrode conductor portion 32 form a concave portion 41 for accommodating a part of each capacitor 14. This improves the cooling performance of the capacitor circuit unit 3.
  • FIG. 7 is a perspective view showing a modified example in which a plurality of capacitors 14 are housed in the recess 41 formed in the positive electrode conductor portion 31.
  • the recess 41 has a longitudinal direction formed along the array of the plurality of capacitors 14 and a lateral direction formed perpendicular to the array direction.
  • the wiring inductance is reduced by arranging the recess 41 so that its longitudinal direction is parallel to the current flow. Further, the larger the area of the recess 41, the easier the storage of the bonding material such as the solder or the sintered material, and the better the assemblability.
  • FIG. 8 is an overall perspective view of a 6-in-1 power semiconductor device configured by combining the 2-in-1 power semiconductor device 1 shown in FIGS.
  • 2in1 means that one power semiconductor device wrapped by a sealing member is regarded as one module, and two circuit units of an upper arm and a lower arm are built in one module. That is, the 6-in-1 has three upper arms and three lower arms in one power semiconductor device. By integrating from 2 in 1 to 6 in 1, the power semiconductor device can be downsized.
  • 9A to 9D are cross-sectional views showing the manufacturing process of the power semiconductor device 1.
  • terminals such as the positive electrode conductor portion 31 and the control terminal 24 are mounted on the metal circuit portion 34 of the collector-side ceramics substrate via the solder 12.
  • the solder 12 may be made of a sintered material or the like.
  • the power semiconductor element is mounted on the positive electrode conductor portion 31 via the solder 12, and the capacitor 14 is further mounted on the concave portion 41 of the positive electrode conductor portion 31. Further, the negative electrode side conductor 32 is mounted and connected to the emitter electrode surface of the power semiconductor element and the capacitor 14 via the solder 12.
  • the positive electrode conductor portion 31 and the negative electrode conductor portion 32 are not particularly limited as long as they are metallic materials having electrical conductivity, but copper having high electrical conductivity is desirable. Aluminum may be used for weight reduction and cost reduction.
  • the Al wire bonding 15 is connected between the upper arm IGBT 10U and the lower arm IGBT 10L and the metal circuit portion 34 of the ceramics substrate.
  • the emitter-side ceramics substrate 36 is mounted on the negative electrode conductor portion 32 via the solder 12.
  • resin molding is performed by transfer molding to form a transfer molding portion that functions as the sealing member 13.
  • the capacitor 14 is disposed between the positive electrode terminal 21 and the negative electrode terminal 22 in close proximity to each other, the inductance is reduced, but the insulating property is reduced. It is desirable that the capacitors 14 are collectively sealed to ensure insulation.

Abstract

本発明の課題は、平滑コンデンサを備えるパワー半導体装置の配線低インダクタンスを図るとともに小型化を図ることである。　本発明に係るパワー半導体装置は、パワー半導体回路部と、複数の平滑コンデンサと、正極導体部及び負極導体部と、封止材と、を備え、前記複数の平滑コンデンサは、前記正極導体部と前記負極導体部により挟まれるコンデンサ回路部を構成し、前記パワー半導体回路部は、前記封止材から露出する第１露出面と、前記封止材から露出しかつ当該第１露出面とは反対側に設けられる第２露出面とを有し、前記第１露出面を重なる平面を第１平面、前記第２露出面を重なる平面を第２平面と定義し、前記コンデンサ回路部は、前記第１平面と前記第２平面の間の空間に納まるように形成され、前記正極導体部又は前記負極導体部は、前記複数の平滑コンデンサの一部を収納する凹部を形成する。

Description

パワー半導体装置
　本発明は、パワー半導体装置に係り、特に直流電力から交流電力に変換する電力変換装置に用いられるパワー半導体装置に関する。
　環境規制の高まりを背景にＥＶ向けのインバータ市場が世界的に急伸している。一方，ＳｉＣなど高キャリア周波数駆動のインバータが注目されており，高キャリア周波数駆動を実現するための低インダクタンス構造が必要とされている。
　特許文献１に記載されたパワー半導体装置は、負極導体部と正極導体部が同一の面にてパワー半導体素子部とコンデンサを配置しているために、コンデンサの厚みをパワー半導体素子部の厚みに調整する必要があり設計自由度が低く、コンデンサの大きさと１台のパワー半導体装置当たりに利用できるコンデンサの数に制限があった。
特開２００３－２８９２１９号公報
　本発明に係る課題は、平滑コンデンサを備えるパワー半導体装置の配線低インダクタンスを図るとともに小型化を図ることである。
　本発明に係るパワー半導体装置は、パワー半導体回路部と、複数の平滑コンデンサと、前記パワー半導体回路部及び前記複数の平滑コンデンサを接続する正極導体部及び負極導体部と、前記パワー半導体回路部と前記複数の平滑コンデンサと前記正極導体部と負極導体部を封止する封止材と、を備え、前記複数の平滑コンデンサは、前記正極導体部と前記負極導体部により挟まれるコンデンサ回路部を構成し、前記パワー半導体回路部は、前記封止材から露出する第１露出面と、前記封止材から露出しかつ当該第１露出面とは反対側に設けられる第２露出面とを有し、前記第１露出面を重なる平面を第１平面、前記第２露出面を重なる平面を第２平面と定義し、前記コンデンサ回路部は、前記第１平面と前記第２平面の間の空間に納まるように形成され、前記正極導体部又は前記負極導体部は、前記複数の平滑コンデンサの一部を収納する凹部を形成する。
　本発明により、平滑コンデンサを備えるパワー半導体装置の配線インダクタンスを低減する小型化を図ることができる。
本実施形態に係るパワー半導体装置１の一方側から見た全体斜視図である。 本実施形態に係るパワー半導体装置１の他方側から見た全体斜視図である。 本実施形態に係るパワー半導体装置１の回路図である。 本実施形態に係るパワー半導体装置１を用いた電力変換装置の回路図である。 封止部材１３及びエミッタ側セラミクス基板３６を取り除きかつ正極導体部３１及び負極導体部３２を透過してパワー半導体素子とコンデンサ１４の配置を示したパワー半導体装置１の透過平面図である。 図１（ａ）の平面Ｓ１に対して矢印方向ａから見たパワー半導体装置１の断面図である。 図１（ａ）の平面Ｓ２に対して矢印方向ｂから見たパワー半導体装置１の断面図である。 他の実施形態に係るパワー半導体装置の断面図である。 正極導体部３１に形成された凹部４１に複数のコンデンサ１４を収納したときの変形例を示す斜視図である。 図１ないし７に示された２ｉｎ１のパワー半導体装置１を組み合わせて６ｉｎ１のパワー半導体装置を構成した全体斜視図である。 パワー半導体装置１の製造工程を示す断面図である。 パワー半導体装置１の製造工程を示す断面図である。 パワー半導体装置１の製造工程を示す断面図である。 パワー半導体装置１の製造工程を示す断面図である。
　以下、本発明に係る構造体の実施の形態として、車両搭載用の電力変換装置に用いられるパワー半導体装置について説明する。パワー半導体素子、パワー半導体素子を搭載する導体部、当該導体板と電気的に接続される絶縁樹脂板としてのセラミクス基板、図面を参照して説明する。なお、各図において同一要素については同一の符号を記し、重複する説明は省略する。
　図１（ａ）は、本実施形態に係るパワー半導体装置１の一方側から見た全体斜視図である。図１（ｂ）は、本実施形態に係るパワー半導体装置１の他方側から見た全体斜視図である。図４は、図１（ａ）の平面Ｓ１に対して矢印方向ａから見たパワー半導体装置１の断面図である。図５は、図１（ａ）の平面Ｓ２に対して矢印方向ｂから見たパワー半導体装置１の断面図である。
　パワー半導体装置１は、直流電圧が印加される正極端子２１および負極端子２２と、交流電圧が出力される交流出力端子２３と、パワー半導体素子を制御する制御信号を伝達する制御用端子２４と、を備える。
　パワー半導体素子は、図４に示される上アームのＩＧＢＴ１０Ｕ及び上アームのダイオード１１Ｕと、図５に示される下アームのＩＧＢＴ１０Ｌ及び下アームのダイオード１１Ｌと、により構成される。
　図４及び図５に示されるように、封止部材１３は、パワー半導体素子、正極導体部３１及び負極導体部３２と、コレクタ側セラミクス基板３３と、エミッタ側セラミクス基板３６と、コンデンサ１４と、を封止する。封止部材１３は、絶縁性の樹脂等により構成される。
　図１（ａ）に示されるように、正極端子２１及び負極端子２２は、封止部材１３の一方の側面から同一方向に突出する。交流出力端子２３及び制御用端子２４は、封止部材１３の一方の側面とは反対側の他方の側面から同一方向に突出する。
　図１（ａ）に示されるように、エミッタ側セラミクス基板３６の金属メタライズ部３８が封止部材１３の主表面から露出する。図１（ｂ）に示されるように、コレクタ側セラミクス基板３３の金属メタライズ部３５が封止部材１３の主表面から露出する。
　図２（ａ）は、本実施形態に係るパワー半導体装置１の回路図である。図２（ｂ）は、本実施形態に係るパワー半導体装置１を用いた電力変換装置の回路図である。
　正極導体部３１は、正極端子２１を介してバッテリ５とコンデンサ１４の正極側に接続される。負極端子部３２は、負極端子２２を介してバッテリ５とコンデンサ１４の負極側に接続される。
　本実施形態のパワー半導体装置１は、上アーム回路及び下アーム回路の２つのアーム回路を、１つのモジュールに一体化した構造である２ｉｎ１構造である。２ｉｎ１構造の他にも、３ｉｎ１構造、４ｉｎ１構造、６ｉｎ１構造等を用いた場合、パワー半導体装置を小型化することができる。上アーム回路は、スイッチング用のパワー半導体素子として上アーム用ＩＧＢＴ１０Ｕと上アーム用ダイオード１１Ｕとを備え、下アーム回路は、下アーム用ＩＧＢＴ１０Ｌと下アームダイオード１１Ｌとを備える。
　図２（ｂ）に示されるように、電力変換装置を含む電動システムは、複数のパワー半導体回路部２と、複数のコンデンサ１４と、モータ４、バッテリ５と、を備えている。
　ＩＧＢＴは駆動信号を受けてスイッチング動作し、バッテリ５から供給された直流電力を三相交流電力に変換する。パワー半導体素子とコンデンサ１４間のＬ成分（インダクタンス）を低減すると、サージ電圧を抑えられるため、耐圧が向上する。２ｉｎ１から６ｉｎ１にしたとき、コンデンサ１４が並列に接続されるために、パワー半導体装置のコンデンサ容量が増加する。
　図３は、封止部材１３及びエミッタ側セラミクス基板３６を取り除きかつ正極導体部３１及び負極導体部３２を透過してパワー半導体素子とコンデンサ１４の配置を示したパワー半導体装置１の透過平面図である。
　図３中に示される矢印は、正極端子２１および負極端子２２までパワー半導体素子を経由する電流の流れを示す。
　図４及び図５に示されるように、複数のコンデンサ１４は、当該コンデンサ１４の正極側電極と負極側電極の配列方向が上アームＩＧＢＴ１０Ｕのエミッタ電極とコレクタ電極の配列方向に平行になるように配置される。
　図１（ａ）及び図１（ｂ）に示された金属メタライズ部３５と金属メタライズ部３８の露出部は、パワー半導体素子と正極導体部３１と負極導体部３２とコンデンサ１４の熱を放熱する。
　図４及び図５に示されるように、パワー半導体回路部２は、エミッタ側セラミクス基板３６と、負極導体部３２の一部と、ＩＧＢＴ及びダイオードと、正極導体部３１の一部と、コレクタ側セラミクス基板３３と、により構成される。
　エミッタ側セラミクス基板３６は、ＩＧＢＴ１０Ｌとダイオード１１Ｌの放熱面を形成する金属メタライズ部３８と、はんだ１２を介して負極導体部３２や交流出力端子２３と接続される金属回路部３７と、により構成される。
　コレクタ側セラミクス基板３３は、ＩＧＢＴ１０Ｌとダイオード１１Ｌの放熱面を形成する金属メタライズ部３５と、はんだ１２を介して正極導体部３１や交流出力端子２３や制御用端子２４と接続される金属回路部３４と、により構成される。
　ボンディングワイヤ１５は、制御用端子２４と接続される金属回路部３４とＩＧＢＴ１０Ｌの制御電極とを接続する配線であり、ＡＩ等により構成される。またはんだ１２は、金属を溶融させて固化した接合材を想定しており、焼結材等の接合部材を用いてもよい。接合部材として焼結材を用いることにより、歩留まりや組立性を向上する効果がある。
　図４及び図５に示されるように、コンデンサ回路部３は、負極導体部３２の一部と、複数のコンデンサ１４と、正極導体部３１の一部と、により構成される。正極導体部３１のベント部４２は、コンデンサ回路部３とパワー半導体回路部２の間に形成される。
　図４に示されるように、正極導体部３１に形成されたベント部４２は、複数のコンデンサ１４の配列方向と平行な面に対して傾斜するように角度を有する。これにより、パワー半導体装置１は、ディスクリートのコンデンサの大きさに合わせ易くなり、組立性を向上しながらパワー半導体装置１の大型化抑制に寄与する。
　ここで、封止部材１３から露出する金属メタライズ部３８の面を第１露出面と、封止部材１３から露出する金属メタライズ部３５の面を第２露出面と、定義する。さらに第１露出面を重なる平面を第１平面Ｆ１、第２露出面を重なる平面を第２平面Ｆ２と定義する。
　本実施形態に係るコンデンサ回路部３は、第１平面Ｆ１と第２平面Ｆ２の間の空間のよりも小さく形成される。さらに正極導体部３１及び負極導体部３２は、それぞれのコンデンサ１４の一部を収納するための凹部４１を形成する。
　これによりコンデンサ回路部３の高さ方向の大型化を抑制しかつパワー半導体装置１の大型化抑制に寄与する。なお、凹部４１は、正極導体部３１と負極導体部３２のいずれか一方に形成されるようにして良い。
　ベント部４２は正極導体部３１と負極導体部３２の間の距離を変えられるため、コンデンサ１４を搭載するための設計自由度が大きくなり、ディスクリートタイプのコンデンサを利用できる。
　またパワー半導体素子の間にコンデンサを配置しないため、パワー半導体装置１台あたりに利用できるコンデンサ数の制限が少なくなる。正極導体部３１または負極導体部３２に凹部４１を設けることで、正極導体部３１と負極導体部３２の距離が狭まりインダクタンスが低下するために、サージ電圧が低下し、耐圧が向上する。凹部４１はコンデンサ１４の位置決めと搭載を容易にする。コンデンサ１４をはんだ等の接合材で組み立てる際に、コンデンサの位置決めをするための冶具は不要となる。
　図６は、他の実施形態に係るパワー半導体装置の断面図である。
　本実施形態に係るコンデンサ回路部３は、第１平面Ｆ１と重なりかつ封止部材１３から露出する負極導体部３２と、第２平面Ｆ２と重なりかつ封止部材１３から露出する正極導体部３１と、を有する。さらに正極導体部３１及び負極導体部３２は、それぞれのコンデンサ１４の一部を収納するための凹部４１を形成する。これにより、コンデンサ回路部３の冷却性能を向上させる。
　図７は、正極導体部３１に形成された凹部４１に複数のコンデンサ１４を収納したときの変形例を示す斜視図である。
　図７に示される矢印は、電流の流れを示す。本実施形態においては、凹部４１は、複数のコンデンサ１４の配列に沿って形成される長手方向と、当該配列方向に対して直角方向に形成される短手方向と、を有する。
　そして、凹部４１の長手方向が電流の流れに平行になるように配置されることで、配線インダクタンスが低減する。また凹部４１の面積が広くなるほど、はんだや焼結材等の接合材の収納が容易となり、組立性が向上する。
　図８は、図１ないし７に示された２ｉｎ１のパワー半導体装置１を組み合わせて６ｉｎ１のパワー半導体装置を構成した全体斜視図である。
　ここで２ｉｎ１とは、封止部材により包まれた１つのパワー半導体装置を１つのモジュールとして、１つのモジュール内に、上アームと下アームの回路単位を２つ内蔵させるものを言う。つまり６ｉｎ１は、１つのパワー半導体装置に上アームを３つ、下アームを３つ有する。２ｉｎ１から６ｉｎ１に一体化することで、パワー半導体装置を小型にすることができる。
　図９（ａ）ないし図９（ｄ）は、パワー半導体装置１の製造工程を示す断面図である。
　図９（ａ）に示されるように、コレクタ側セラミクス基板の金属回路部３４に、はんだ１２を介して、正極導体部３１、制御端子２４等の端子を搭載する。なお、はんだ１２は、焼結材等により構成しても良い。
　はんだ１２を介して、正極導体部３１にパワー半導体素子を搭載し、さらに正極導体部３１の凹部４１にコンデンサ１４を搭載する。さらにパワー半導体素子のエミッタ電極面とコンデンサ１４にはんだ１２を介して、負極側導体３２を搭載し接続する。
　正極導体部３１と負極導体部３２は、電気伝導性を有する金属材料であれば特に制約されないが、電気伝導性が高い銅が望ましい。軽量化や低コスト化のためにアルミを用いてもよい。
　図９（ｂ）に示されるように、上アームＩＧＢＴ１０Ｕ及び下アームＩＧＢＴ１０Ｌとセラミクス基板の金属回路部３４の間にＡｌワイヤボンディング１５を接続する。
　図９（ｃ）に示されるように、はんだ１２を介して負極導体部３２にエミッタ側セラミクス基板３６を搭載する。
　図９（ｄ）に示されるように、トランスファーモールドにより樹脂封止し、封止部材１３として機能するトランスファーモールド部を形成する。コンデンサ１４を正極端子２１と負極端子２２の間に近接配置するとインダクタンスは低減するが、絶縁性が低下する。絶縁性を確保するためにコンデンサ１４を一括で封止することが望ましい。
１…パワー半導体装置、２…パワー半導体回路部、３…コンデンサ回路部、４…モータ、５…バッテリ、１０Ｕ…上アームのＩＧＢＴ、１０Ｌ…下アームのＩＧＢＴ、１１Ｕ…上アームのダイオード、１１Ｌ…下アームのダイオード、１２…はんだ、１３…封止部材、１４…コンデンサ、１５…ボンディングワイヤ、２１…正極端子、２２…負極端子、２３…交流出力端子、２４…制御用端子、３１…正極導体部、３２…負極導体部、３３…コレクタ側セラミクス基板、３４…コレクタ側セラミクス基板の金属回路部、３５…コレクタ側セラミクス基板の金属メタライズ部、３６…エミッタ側セラミクス基板、３７…エミッタ側セラミクス基板の金属回路部、３８…エミッタ側セラミクス基板の金属メタライズ部、４１…凹部、４２…ベント部、Ｆ１…第１平面、Ｆ２…第２平面

Claims (4)

  1. 　パワー半導体回路部と、
    　複数の平滑コンデンサと、
    　前記パワー半導体回路部及び前記複数の平滑コンデンサを接続する正極導体部及び負極導体部と、
    　前記パワー半導体回路部と前記複数の平滑コンデンサと前記正極導体部と負極導体部を封止する封止材と、を備え、
    　前記複数の平滑コンデンサは、前記正極導体部と前記負極導体部により挟まれるコンデンサ回路部を構成し、
    　前記パワー半導体回路部は、前記封止材から露出する第１露出面と、前記封止材から露出しかつ当該第１露出面とは反対側に設けられる第２露出面とを有し、
    　前記第１露出面を重なる平面を第１平面、前記第２露出面を重なる平面を第２平面と定義し、
    　前記コンデンサ回路部は、前記第１平面と前記第２平面の間の空間に納まるように形成され、
    　前記正極導体部又は前記負極導体部は、前記複数の平滑コンデンサの一部を収納する凹部を形成するパワー半導体装置。
  2. 　請求項１に記載のパワー半導体装置であって、
    　前記コンデンサ回路部は、前記第１平面と前記第２平面の間の空間より小さくなるように形成されるパワー半導体装置。
  3. 　請求項１または２に記載のパワー半導体装置であって、
    　前記正極導体部又は前記負極導体部は、前記パワー半導体回路部と前記コンデンサ回路部の間に設けられかつ前記複数の平滑コンデンサの配列方向に対して角度を有するように形成される傾斜部を有するパワー半導体装置。
  4. 　請求項１ないし３に記載のいずれかのパワー半導体装置であって、
    　前記平滑コンデンサは、当該平滑コンデンサの長手方向が半導体素子の電極面に直角になるように配置され、かつ前記正極導体部と前記負極導体部に挟まる空間に配置されるパワー半導体装置。
PCT/JP2019/032960 2019-01-22 2019-08-23 パワー半導体装置 WO2020152898A1 (ja)

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