JP2018531514A - 琥珀色〜赤色の発光（＞６００ｎｍ）を有するＩＩＩ族窒化物半導体発光デバイス及びこれを作製するための方法 - Google Patents

琥珀色〜赤色の発光（＞６００ｎｍ）を有するＩＩＩ族窒化物半導体発光デバイス及びこれを作製するための方法 Download PDF

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JP2018531514A
JP2018531514A JP2018517812A JP2018517812A JP2018531514A JP 2018531514 A JP2018531514 A JP 2018531514A JP 2018517812 A JP2018517812 A JP 2018517812A JP 2018517812 A JP2018517812 A JP 2018517812A JP 2018531514 A JP2018531514 A JP 2018531514A
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multiple quantum
quantum well
layer
nitride semiconductor
indium concentration
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JP2018531514A6 (ja
JP2018531514A5 (enExample
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イェ，イャ−チュアン・ミルトン
エル−ゴロウリー，フセイン・エス
リ，シン
チェン，ジ−チァ
チュアン，チー−リ
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オステンド・テクノロジーズ・インコーポレーテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP

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JP2018517812A 2015-10-08 2016-10-07 琥珀色〜赤色の発光（＞６００ｎｍ）を有するＩＩＩ族窒化物半導体発光デバイス及びこれを作製するための方法 Pending JP2018531514A (ja)

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US201562239122P 2015-10-08 2015-10-08
US62/239,122 2015-10-08
US15/287,384 US10396240B2 (en) 2015-10-08 2016-10-06 III-nitride semiconductor light emitting device having amber-to-red light emission (>600 nm) and a method for making same
US15/287,384 2016-10-06
PCT/US2016/056157 WO2017062889A1 (en) 2015-10-08 2016-10-07 III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING AMBER-TO-RED LIGHT EMISSION (>600 nm) AND A METHOD FOR MAKING SAME

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JP2022036024A Pending JP2022071179A (ja) 2015-10-08 2022-03-09 琥珀色～赤色の発光を有するｉｉｉ族窒化物半導体発光ｌｅｄ

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EP (1) EP3360168B1 (enExample)
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CN (1) CN108292693B (enExample)
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JP2023528183A (ja) * 2020-05-04 2023-07-04 グーグル エルエルシー Ｌｅｄ構造および関連付けられた方法
JP2023178173A (ja) * 2022-06-02 2023-12-14 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法

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US10971652B2 (en) 2017-01-26 2021-04-06 Epistar Corporation Semiconductor device comprising electron blocking layers
US11056434B2 (en) * 2017-01-26 2021-07-06 Epistar Corporation Semiconductor device having specified p-type dopant concentration profile
WO2019130753A1 (ja) * 2017-12-27 2019-07-04 オリンパス株式会社 光源装置
FR3089686B1 (fr) 2018-12-11 2020-11-13 Aledia Dispositif optoélectronique comportant des pixels émettant trois couleurs
US11923398B2 (en) 2019-12-23 2024-03-05 Lumileds Llc III-nitride multi-wavelength LED arrays
US11404473B2 (en) 2019-12-23 2022-08-02 Lumileds Llc III-nitride multi-wavelength LED arrays
TW202201807A (zh) 2020-05-19 2022-01-01 美商瑞克斯姆股份有限公司 用於發光元件之應變管理層之組合
US11264535B1 (en) * 2020-08-12 2022-03-01 Jyh-Chia Chen Pixel device and display using a monolithic blue/green LED combined with red luminescence materials
US11631786B2 (en) 2020-11-12 2023-04-18 Lumileds Llc III-nitride multi-wavelength LED arrays with etch stop layer
CN114975702B (zh) * 2022-06-30 2025-07-08 厦门未来显示技术研究院有限公司 一种红光Micro LED外延结构及其制作方法

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JP2023178173A (ja) * 2022-06-02 2023-12-14 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法

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