|
US4839899A
(en)
|
1988-03-09 |
1989-06-13 |
Xerox Corporation |
Wavelength tuning of multiple quantum well (MQW) heterostructure lasers
|
|
JPH04350988A
(ja)
*
|
1991-05-29 |
1992-12-04 |
Nec Kansai Ltd |
量子井戸構造発光素子
|
|
US5422898A
(en)
|
1993-10-29 |
1995-06-06 |
International Business Machines Corporation |
Tapered Fabry-Perot multi-wavelength optical source
|
|
US5386428A
(en)
|
1993-11-02 |
1995-01-31 |
Xerox Corporation |
Stacked active region laser array for multicolor emissions
|
|
US5737353A
(en)
|
1993-11-26 |
1998-04-07 |
Nec Corporation |
Multiquantum-well semiconductor laser
|
|
JP2682474B2
(ja)
*
|
1993-11-26 |
1997-11-26 |
日本電気株式会社 |
半導体レーザ装置
|
|
JPH08316588A
(ja)
|
1995-05-23 |
1996-11-29 |
Furukawa Electric Co Ltd:The |
歪量子井戸構造を有する半導体光素子
|
|
US5684309A
(en)
|
1996-07-11 |
1997-11-04 |
North Carolina State University |
Stacked quantum well aluminum indium gallium nitride light emitting diodes
|
|
JPH1187773A
(ja)
*
|
1997-09-08 |
1999-03-30 |
Toshiba Corp |
発光素子
|
|
TW412889B
(en)
|
1997-09-24 |
2000-11-21 |
Nippon Oxygen Co Ltd |
Semiconductor laser
|
|
CN1347581A
(zh)
|
1999-03-26 |
2002-05-01 |
松下电器产业株式会社 |
带有应变补偿层的半导体结构及其制备方法
|
|
US7202506B1
(en)
|
1999-11-19 |
2007-04-10 |
Cree, Inc. |
Multi element, multi color solid state LED/laser
|
|
NL1015860C2
(nl)
*
|
2000-08-02 |
2002-02-05 |
Wavin Bv |
Werkwijzen en inrichtingen voor het vervaardigen van een buis van biaxiaal georiÙnteerd thermo-plastisch kunststofmateriaal met een integrale mof.
|
|
US6469358B1
(en)
|
2000-09-21 |
2002-10-22 |
Lockheed Martin Corporation |
Three color quantum well focal plane arrays
|
|
JP2002176198A
(ja)
*
|
2000-12-11 |
2002-06-21 |
Mitsubishi Cable Ind Ltd |
多波長発光素子
|
|
MY129352A
(en)
|
2001-03-28 |
2007-03-30 |
Nichia Corp |
Nitride semiconductor device
|
|
JP2004146498A
(ja)
|
2002-10-23 |
2004-05-20 |
Stanley Electric Co Ltd |
半導体発光装置
|
|
CA2427559A1
(en)
|
2002-05-15 |
2003-11-15 |
Sumitomo Electric Industries, Ltd. |
White color light emitting device
|
|
US7058105B2
(en)
|
2002-10-17 |
2006-06-06 |
Samsung Electro-Mechanics Co., Ltd. |
Semiconductor optoelectronic device
|
|
US6927412B2
(en)
|
2002-11-21 |
2005-08-09 |
Ricoh Company, Ltd. |
Semiconductor light emitter
|
|
JP4571372B2
(ja)
*
|
2002-11-27 |
2010-10-27 |
ローム株式会社 |
半導体発光素子
|
|
US20040161006A1
(en)
*
|
2003-02-18 |
2004-08-19 |
Ying-Lan Chang |
Method and apparatus for improving wavelength stability for InGaAsN devices
|
|
US6919584B2
(en)
|
2003-06-19 |
2005-07-19 |
Harvatek Corporation |
White light source
|
|
KR100482511B1
(ko)
|
2004-02-05 |
2005-04-14 |
에피밸리 주식회사 |
Ⅲ-질화물계 반도체 발광소자
|
|
US7323721B2
(en)
|
2004-09-09 |
2008-01-29 |
Blue Photonics Inc. |
Monolithic multi-color, multi-quantum well semiconductor LED
|
|
US8148713B2
(en)
|
2008-04-04 |
2012-04-03 |
The Regents Of The University Of California |
Method for fabrication of semipolar (Al, In, Ga, B)N based light emitting diodes
|
|
KR100649749B1
(ko)
*
|
2005-10-25 |
2006-11-27 |
삼성전기주식회사 |
질화물 반도체 발광 소자
|
|
KR100665364B1
(ko)
*
|
2005-12-28 |
2007-01-09 |
삼성전기주식회사 |
질화물 반도체 발광 소자
|
|
KR20070080696A
(ko)
|
2006-02-08 |
2007-08-13 |
삼성전자주식회사 |
질화물계 반도체 레이저 다이오드
|
|
KR100774200B1
(ko)
|
2006-04-13 |
2007-11-08 |
엘지전자 주식회사 |
유기 ｅｌ 소자 및 그 제조방법
|
|
US7593436B2
(en)
|
2006-06-16 |
2009-09-22 |
Vi Systems Gmbh |
Electrooptically Bragg-reflector stopband-tunable optoelectronic device for high-speed data transfer
|
|
KR20080035865A
(ko)
*
|
2006-10-20 |
2008-04-24 |
삼성전자주식회사 |
반도체 발광 소자
|
|
TWI338382B
(en)
|
2006-11-29 |
2011-03-01 |
Univ Nat Taiwan |
Method and structure for manufacturing long-wavelength light-emitting diode using prestrain effect
|
|
KR100862497B1
(ko)
|
2006-12-26 |
2008-10-08 |
삼성전기주식회사 |
질화물 반도체 소자
|
|
JP2008235606A
(ja)
|
2007-03-20 |
2008-10-02 |
Sony Corp |
半導体発光素子、半導体発光素子の製造方法、バックライト、表示装置、電子機器および発光装置
|
|
US7649195B2
(en)
*
|
2007-06-12 |
2010-01-19 |
Seoul Opto Device Co., Ltd. |
Light emitting diode having active region of multi quantum well structure
|
|
US7623560B2
(en)
|
2007-09-27 |
2009-11-24 |
Ostendo Technologies, Inc. |
Quantum photonic imagers and methods of fabrication thereof
|
|
GB2456756A
(en)
|
2008-01-16 |
2009-07-29 |
Sharp Kk |
AlInGaN Light-Emitting devices
|
|
JP4720834B2
(ja)
|
2008-02-25 |
2011-07-13 |
住友電気工業株式会社 |
Ｉｉｉ族窒化物半導体レーザ
|
|
JP2009224370A
(ja)
*
|
2008-03-13 |
2009-10-01 |
Rohm Co Ltd |
窒化物半導体デバイス
|
|
TW200950162A
(en)
*
|
2008-04-04 |
2009-12-01 |
Univ California |
Method for fabrication of semipolar (Al, In, Ga, B)N based light emitting diodes
|
|
KR20100134089A
(ko)
*
|
2008-04-04 |
2010-12-22 |
더 리전츠 오브 더 유니버시티 오브 캘리포니아 |
평면의 반극성 (Ａｌ, Ｉｎ, Ｇａ, Ｂ)Ｎ계 발광 다이오드들에 대한 ＭＯＣＶＤ 성장 기술
|
|
US20100006873A1
(en)
|
2008-06-25 |
2010-01-14 |
Soraa, Inc. |
HIGHLY POLARIZED WHITE LIGHT SOURCE BY COMBINING BLUE LED ON SEMIPOLAR OR NONPOLAR GaN WITH YELLOW LED ON SEMIPOLAR OR NONPOLAR GaN
|
|
WO2010020065A1
(en)
|
2008-08-19 |
2010-02-25 |
Lattice Power (Jiangxi) Corporation |
Method for fabricating ingan-based multi-quantum well layers
|
|
JP5394717B2
(ja)
*
|
2008-12-15 |
2014-01-22 |
日本オクラロ株式会社 |
窒化物半導体光素子の製造方法
|
|
JP4775455B2
(ja)
*
|
2009-02-17 |
2011-09-21 |
住友電気工業株式会社 |
Ｉｉｉ族窒化物半導体レーザ、及びｉｉｉ族窒化物半導体レーザを作製する方法
|
|
US9153790B2
(en)
|
2009-05-22 |
2015-10-06 |
Idemitsu Kosan Co., Ltd. |
Organic electroluminescent device
|
|
US8296624B2
(en)
*
|
2009-06-30 |
2012-10-23 |
Comcast Cable Communications, Llc |
Variable interleave data transmission
|
|
JP2013502731A
(ja)
*
|
2009-08-21 |
2013-01-24 |
ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア |
ミスフィット転位を有する部分的または完全に弛緩したＡｌＩｎＧａＮ層による半極性窒化物量子井戸の異方性ひずみ制御
|
|
US8314429B1
(en)
|
2009-09-14 |
2012-11-20 |
Soraa, Inc. |
Multi color active regions for white light emitting diode
|
|
US9484197B2
(en)
|
2009-10-23 |
2016-11-01 |
The Royal Institution For The Advancement Of Learning/Mcgill University |
Lateral growth semiconductor method and devices
|
|
KR100993085B1
(ko)
*
|
2009-12-07 |
2010-11-08 |
엘지이노텍 주식회사 |
발광 소자, 발광 소자 패키지 및 라이트 유닛
|
|
JP5060656B2
(ja)
|
2009-12-21 |
2012-10-31 |
株式会社東芝 |
窒化物半導体発光素子およびその製造方法
|
|
TWI508621B
(zh)
|
2010-02-03 |
2015-11-11 |
Innolux Corp |
影像顯示系統
|
|
US20110188528A1
(en)
|
2010-02-04 |
2011-08-04 |
Ostendo Technologies, Inc. |
High Injection Efficiency Polar and Non-Polar III-Nitrides Light Emitters
|
|
JP4940317B2
(ja)
*
|
2010-02-25 |
2012-05-30 |
株式会社東芝 |
半導体発光素子及びその製造方法
|
|
US8451877B1
(en)
|
2010-03-23 |
2013-05-28 |
Sandia Corporation |
High efficiency III-nitride light-emitting diodes
|
|
US20110237011A1
(en)
|
2010-03-29 |
2011-09-29 |
Nanjing University |
Method for Forming a GaN-Based Quantum-Well LED with Red Light
|
|
JP5533744B2
(ja)
*
|
2010-03-31 |
2014-06-25 |
豊田合成株式会社 |
Ｉｉｉ族窒化物半導体発光素子
|
|
US20120000866A1
(en)
*
|
2010-06-30 |
2012-01-05 |
Randal Huszczo |
Glass Storage and Transport Rack with Pivoting Arms
|
|
JP5372045B2
(ja)
|
2011-02-25 |
2013-12-18 |
株式会社東芝 |
半導体発光素子
|
|
JP5737111B2
(ja)
*
|
2011-03-30 |
2015-06-17 |
豊田合成株式会社 |
Ｉｉｉ族窒化物半導体発光素子
|
|
EP2718988A2
(en)
|
2011-06-10 |
2014-04-16 |
The Regents of the University of California |
Low droop light emitting diode structure on gallium nitride semipolar substrates
|
|
US8927958B2
(en)
*
|
2011-07-12 |
2015-01-06 |
Epistar Corporation |
Light-emitting element with multiple light-emitting stacked layers
|
|
GB201112792D0
(en)
*
|
2011-07-26 |
2011-09-07 |
Smith Michael |
A ratchet buckle use for the tightening of straps
|
|
US9070613B2
(en)
|
2011-09-07 |
2015-06-30 |
Lg Innotek Co., Ltd. |
Light emitting device
|
|
TWI562396B
(en)
|
2011-09-29 |
2016-12-11 |
Epistar Corp |
Light-emitting device
|
|
KR20130078345A
(ko)
|
2011-12-30 |
2013-07-10 |
일진엘이디(주) |
스트레인 완충층을 이용하여 발광효율이 우수한 질화물계 발광소자
|
|
JP6136284B2
(ja)
*
|
2012-03-13 |
2017-05-31 |
株式会社リコー |
半導体積層体及び面発光レーザ素子
|
|
US9124062B2
(en)
*
|
2012-03-22 |
2015-09-01 |
Palo Alto Research Center Incorporated |
Optically pumped surface emitting lasers incorporating high reflectivity/bandwidth limited reflector
|
|
KR101936305B1
(ko)
|
2012-09-24 |
2019-01-08 |
엘지이노텍 주식회사 |
발광소자
|
|
JP2014067893A
(ja)
*
|
2012-09-26 |
2014-04-17 |
Toyoda Gosei Co Ltd |
Ｉｉｉ族窒化物半導体発光素子
|
|
US9978904B2
(en)
*
|
2012-10-16 |
2018-05-22 |
Soraa, Inc. |
Indium gallium nitride light emitting devices
|
|
US8890114B2
(en)
|
2012-10-16 |
2014-11-18 |
Epistar Corporation |
Light-emitting device
|
|
US9847444B2
(en)
|
2012-11-06 |
2017-12-19 |
Canon Kabushiki Kaisha |
Photonic device and optical coherence tomography apparatus including the photonic device as light source
|
|
DE102013108782B4
(de)
*
|
2012-11-21 |
2024-05-08 |
Epistar Corp. |
Lichtemittierende Vorrichtung mit mehreren lichtemittierenden Stapelschichten
|
|
US8941111B2
(en)
|
2012-12-21 |
2015-01-27 |
Invensas Corporation |
Non-crystalline inorganic light emitting diode
|
|
WO2014138904A1
(en)
|
2013-03-14 |
2014-09-18 |
The Royal Institution For The Advancement Of Learning/Mcgill University |
Methods and devices for solid state nanowire devices
|
|
US10839734B2
(en)
|
2013-12-23 |
2020-11-17 |
Universal Display Corporation |
OLED color tuning by driving mode variation
|
|
KR102390624B1
(ko)
|
2015-06-05 |
2022-04-26 |
오스텐도 테크놀로지스 인코포레이티드 |
다수의 활성층들로 선택적으로 캐리어를 주입한 발광 구조체
|