CN108292693B - 具有琥珀色到红色光发射（＞600nm）的III族氮化物半导体光发射设备以及用于制作所述设备的方法 - Google Patents

具有琥珀色到红色光发射（＞600nm）的III族氮化物半导体光发射设备以及用于制作所述设备的方法 Download PDF

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CN108292693B
CN108292693B CN201680072137.5A CN201680072137A CN108292693B CN 108292693 B CN108292693 B CN 108292693B CN 201680072137 A CN201680072137 A CN 201680072137A CN 108292693 B CN108292693 B CN 108292693B
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quantum well
well layers
layers
layer
indium concentration
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CN108292693A (zh
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Y-C.M.叶
H.S.艾戈劳里
X.李
J-C.陈
庄奇理
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Ostendo Technologies Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP

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CN201680072137.5A 2015-10-08 2016-10-07 具有琥珀色到红色光发射（＞600nm）的III族氮化物半导体光发射设备以及用于制作所述设备的方法 Expired - Fee Related CN108292693B (zh)

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US201562239122P 2015-10-08 2015-10-08
US62/239122 2015-10-08
US15/287,384 US10396240B2 (en) 2015-10-08 2016-10-06 III-nitride semiconductor light emitting device having amber-to-red light emission (>600 nm) and a method for making same
US15/287384 2016-10-06
PCT/US2016/056157 WO2017062889A1 (en) 2015-10-08 2016-10-07 III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING AMBER-TO-RED LIGHT EMISSION (>600 nm) AND A METHOD FOR MAKING SAME

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CN108292693A CN108292693A (zh) 2018-07-17
CN108292693B true CN108292693B (zh) 2021-10-22

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US (1) US10396240B2 (enExample)
EP (1) EP3360168B1 (enExample)
JP (2) JP2018531514A (enExample)
KR (1) KR20180067590A (enExample)
CN (1) CN108292693B (enExample)
TW (1) TWI775729B (enExample)
WO (1) WO2017062889A1 (enExample)

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US20170104128A1 (en) 2017-04-13
HK1258318A1 (zh) 2019-11-08
EP3360168A1 (en) 2018-08-15
TW201735390A (zh) 2017-10-01
WO2017062889A1 (en) 2017-04-13
US10396240B2 (en) 2019-08-27
EP3360168B1 (en) 2021-09-29
JP2018531514A (ja) 2018-10-25
JP2022071179A (ja) 2022-05-13
KR20180067590A (ko) 2018-06-20
TWI775729B (zh) 2022-09-01
CN108292693A (zh) 2018-07-17

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