TWI775729B - 具有琥珀色至紅色發光（＞600ｎｍ）之III族氮化物半導體發光裝置及其製造方法 - Google Patents

具有琥珀色至紅色發光（＞600ｎｍ）之III族氮化物半導體發光裝置及其製造方法 Download PDF

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TWI775729B
TWI775729B TW105132658A TW105132658A TWI775729B TW I775729 B TWI775729 B TW I775729B TW 105132658 A TW105132658 A TW 105132658A TW 105132658 A TW105132658 A TW 105132658A TW I775729 B TWI775729 B TW I775729B
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quantum well
layer
indium concentration
strain compensation
nitride semiconductor
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TW105132658A
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Chinese (zh)
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TW201735390A (zh
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亞權 米爾頓 葉
哈森 S 艾爾－葛洛力
李星
季嘉 陳
奇理 莊
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美商傲思丹度科技公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP

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TW105132658A 2015-10-08 2016-10-07 具有琥珀色至紅色發光（＞600ｎｍ）之III族氮化物半導體發光裝置及其製造方法 TWI775729B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201562239122P 2015-10-08 2015-10-08
US62/239,122 2015-10-08
US15/287,384 US10396240B2 (en) 2015-10-08 2016-10-06 III-nitride semiconductor light emitting device having amber-to-red light emission (>600 nm) and a method for making same
US15/287,384 2016-10-06

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TW201735390A TW201735390A (zh) 2017-10-01
TWI775729B true TWI775729B (zh) 2022-09-01

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US (1) US10396240B2 (enExample)
EP (1) EP3360168B1 (enExample)
JP (2) JP2018531514A (enExample)
KR (1) KR20180067590A (enExample)
CN (1) CN108292693B (enExample)
TW (1) TWI775729B (enExample)
WO (1) WO2017062889A1 (enExample)

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JP2018531514A (ja) 2018-10-25
US20170104128A1 (en) 2017-04-13
TW201735390A (zh) 2017-10-01
CN108292693B (zh) 2021-10-22
JP2022071179A (ja) 2022-05-13
EP3360168B1 (en) 2021-09-29
US10396240B2 (en) 2019-08-27
CN108292693A (zh) 2018-07-17
EP3360168A1 (en) 2018-08-15
HK1258318A1 (zh) 2019-11-08
KR20180067590A (ko) 2018-06-20
WO2017062889A1 (en) 2017-04-13

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