JP2013502731A - ミスフィット転位を有する部分的または完全に弛緩したAlInGaN層による半極性窒化物量子井戸の異方性ひずみ制御 - Google Patents
ミスフィット転位を有する部分的または完全に弛緩したAlInGaN層による半極性窒化物量子井戸の異方性ひずみ制御 Download PDFInfo
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- 150000004767 nitrides Chemical class 0.000 title claims description 20
- 239000000758 substrate Substances 0.000 claims abstract description 62
- 230000003287 optical effect Effects 0.000 claims abstract description 21
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000000203 mixture Substances 0.000 claims description 28
- 230000010287 polarization Effects 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 17
- 229910045601 alloy Inorganic materials 0.000 claims description 11
- 239000000956 alloy Substances 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 230000003595 spectral effect Effects 0.000 claims description 4
- 229910002601 GaN Inorganic materials 0.000 description 55
- 229910002704 AlGaN Inorganic materials 0.000 description 13
- 229910052738 indium Inorganic materials 0.000 description 11
- 238000003917 TEM image Methods 0.000 description 10
- 230000001427 coherent effect Effects 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 229910052733 gallium Inorganic materials 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 238000010894 electron beam technology Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 241000894007 species Species 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- 229910052984 zinc sulfide Inorganic materials 0.000 description 3
- 241000921519 Syrrhopodon sp. Species 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- -1 ALUMINUM INDIUM GALLIUM Chemical compound 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000005701 quantum confined stark effect Effects 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- VLCQZHSMCYCDJL-UHFFFAOYSA-N tribenuron methyl Chemical compound COC(=O)C1=CC=CC=C1S(=O)(=O)NC(=O)N(C)C1=NC(C)=NC(OC)=N1 VLCQZHSMCYCDJL-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
本願は、次の同時継続の同一人に譲渡された米国仮特許出願の米国特許法第119条第(e)項の利益を主張し、これらの出願は、本明細書に参照により援用される:Hiroaki Ohta、Feng Wu、Anurag Tyagi、Arpan Chakraborty、James S.Speck、Steven P.DenBaars、およびShuji Nakamuraによる米国仮特許出願第61/236,059号(名称「ANISOTROPIC STRAIN CONTROL IN SEMIPOLAR NITRIDE QUANTUM WELLS BY PARTIALLY OR FULLY RELAXED ALUMINUM INDIUM GALLIUM NITRIDE LAYERS WITH MISFIT DISLOCATIONS」、2009年8月21日出願、代理人整理番号30794.318−US−P1(2009−743−1))、ならびにHiroaki Ohta、Feng Wu、Anurag Tyagi、Arpan Chakraborty、James S.Speck、Steven P.DenBaars、およびShuji Nakamuraによる米国仮特許出願第61/236,058号(名称「SEMIPOLAR NITRIDE−BASED DEVICES ON PARTIALLY OR FULLY RELAXED ALLOYS WITH MISFIT DISLOCATIONS AT THE HETEROINTERFACE」、2009年8月21日出願、代理人整理番号30794.317−US−P1 (2009−742−1))。
本発明は、発光ダイオード(LED)およびレーザダイオード(LD)等の、光学素子に関し、活性層内の歪みを調節するテンプレート上に成長させ、それによって、活性層のバンド構造および発せられた光の分極を調節する。
(注:本願は、明細書の全体を通して示されるように、角括弧内の1つ以上の参照番号、例えば[x]によって多数の異なる刊行物を参照する。これらの参照番号による順序で示されるこれらの異なる刊行物の一覧は、以下の「参考文献」という表題の項に見出すことができる。これらの刊行物のそれぞれは、参照することにより本明細書に組み込まれる。)
参照[1−3(非特許文献1−3)]では、量子井戸(QW)内の歪みの存在が、QWのバンド構造(自発的発光の分極および利得)を調節可能であることが示された。これは、既知の現象である(例えば、[4(非特許文献4)]を参照)。一般に、六方晶ウルツ鉱型結晶構造を有する半極性の窒素物エピタキシャル層の歪みは、異なる格子パラメータのaおよびcによる異方性(格子異方性)である。参照[5(非特許文献5)]は、以下の格子定数の値を報告する:a(AlN)=3.112オングストローム、a(GaN)=3.189オングストローム、a(InN)=3.54オングストローム、c(AlN)=4.982オングストローム、c(GaN)=5.185オングストローム、およびc(InN)=5.705オングストローム。
別の層(Y)(層Yは、それ自体がエピタキシャル、または基板であり得る)上に成長させたエピタキシャル層(X)は、Yに対してコヒーレントであること、部分的に緩和、または完全に緩和されることができる。コヒーレントな成長の場合、Xの面内格子定数は、下側にある層Yと同一に拘束される。Xが完全に緩和された場合、Xの格子定数は、それらの自然の(すなわち、いかなる歪みもない)値であると仮定する。XがYに対してコヒーレントでもなく、完全に緩和されない場合、部分的に緩和されたと考えられる。一部の場合、基板は、いくらかの残存歪みを有し得る。
(命名法)
(Al、Ga、In)N、III族窒化物、またはAlInGaNという用語は、本明細書で使用される場合、単一の種、Al、Ga、およびInのそれぞれの窒化物、ならびにそのようなIII族金属種の二元、三元、および四元組成を含むと広義に解釈される。したがって、(Al、Ga、In)N、AlInGaN、またはIII族窒化物という用語は、そのような命名法に含まれる種として、化合物AlN、GaN、およびInN、ならびに三元化合物AlGaN、GaInN、およびAlInN、および四元化合物AlGaInNを包含する。(Ga、Al、In)構成種のうちの2つ以上が存在するとき、(組成に存在する(Ga、Al、In)構成種のそれぞれを表す相対モル分率に関して)化学量論的割合ならびに「化学量論外」割合を含む、全ての可能な組成を、本発明の広義の範囲内で採用することができる。したがって、主にGaN材料に関する、以降の本発明の論議は、種々の他の(Al、Ga、In)N材料種の形成に適用可能であることが理解されるであろう。さらに、本発明の範囲内の(Al、Ga、In)N材料は、軽微な数量のドーパントおよび/または他の不純物あるいは包含物質をさらに含んでもよい。
図4、5(a)、6(a)〜(c)、7、8(a)、および9(a)は、MD400が、半極性(11−22)窒化物ベースのエピタキシャル層404、406中のヘテロ界面402に存在するという発見を示すTEM画像である。この新発見において、MD400の存在は、格子定数不整合を有する(異なる合金および/または合金組成を有する)層404、406の間のヘテロ界面周辺だけに制限された。言い換えれば、ヘテロ界面402に制限されたMD400を有するエピタキシャル層は、層404を通る、および成長方向に向かう(ヘテロ界面402に直角である)明らかな転位も有しなかった。これは、本発明が、元の基板406上に、緩和された格子定数を有する、転位のない合金テンプレートを得るための方法を提供することを示す。
図15は、本発明のエピタキシャル構造(例えば、III族窒化物ベースの光学素子構造)を製造する方法を示すフローチャートである。方法は、以下のステップを含む。
山口氏の論文[1]では、X1、X2、およびX3の中で最強の要素は、InGaNまたは図16に示されるように、別の四元基板([1]から得られた)を用いることによって変更する。この場合、基板上でのコヒーレント成長が仮定された。
以下の参考文献は、参照することにより本明細書にその全体が組み込まれる。
Claims (21)
- III族窒化物ベースの光学素子のためのエピタキシャル構造であって、
III族窒化物下層上に形成された異方性歪みを有するIII族窒化物活性層を備え、該下層の格子定数および歪みは、該下層下のヘテロ界面におけるミスフィット転位の存在に起因して、少なくとも1つの方向に基板に対して部分的または完全に緩和され、それにより、該活性層の該異方性歪みが、該下層によって調節される、エピタキシャル構造。 - 前記基板は、半極性GaN基板であり、前記下層は、半極性平面である該GaN基板の上面上に蒸着され、該下層は、該下層の面内c投影に平行である方向に沿って緩和され、該下層は、該下層のm軸方向に沿っては緩和されず、前記活性層は、半極性平面である該下層の上面上に蒸着される、請求項1に記載のエピタキシャル構造。
- 前記ミスフィット転位は、前記異方性歪みを調節するように配置され、それにより、前記活性層内の歪みが、該活性層の第1の方向に第1の歪みを有し、該活性層の第2の方向に第2の歪みを有する、請求項1に記載のエピタキシャル構造。
- 前記下層は、前記第1の方向に沿って緩和され、該下層は、前記第2の方向に沿っては緩和されない、請求項1に記載のエピタキシャル構造。
- 前記第1の方向は、面内c投影(X2)に平行であり、前記第2の方向は、該第1の方向に直角であり、前記ミスフィット転位は、該第1の方向に沿っている、請求項4に記載のエピタキシャル構造。
- 前記下層は、前記基板上に成長させられ、該下層の前記格子定数および歪みは、該基板に対して部分的または完全に緩和され、それにより、該下層の該格子定数は、該基板の格子定数と同じ値に拘束されるのではなく、むしろそれの自然の値になり、該下層は歪みがなくなる、請求項1に記載のエピタキシャル構造。
- 前記活性層は、AlInGaN量子井戸または多重量子井戸である、請求項1に記載のエピタキシャル構造。
- 前記下層は、0を超えるIn組成を有するInAlGaNであり、前記活性層は、20%を超えるIn組成を有するInGaNを備える、請求項1に記載のエピタキシャル構造。
- 活性層は、3ナノメートルを超える厚さを有する1つ以上の量子井戸を備え、前記ミスフィット転位が、前記異方性歪みを調節するように配置されることにより、該量子井戸によって発せられる光が、正味のX2分極を有する、請求項8に記載のエピタキシャル構造。
- 前記量子井戸は、前記量子井戸が、緑色スペクトル領域においてピーク波長を有する光を放出するようなIn組成および厚さを有する、請求項9に記載のエピタキシャル構造。
- 前記量子井戸は、半極性または無極性量子井戸である、請求項9に記載のエピタキシャル構造。
- 前記下層は、基板上にコヒーレントに成長させられない、請求項1に記載のエピタキシャル構造。
- 前記ミスフィット転位が、前記下層と前記基板または該下層下の層との間のヘテロ界面によって生じさせられ、各々は異なるIII族窒化物合金組成を有しており、該ミスフィット転位は、ヘテロ界面周辺に局所化され、それにより、前記活性層周辺の層内の前記ミスフィット転位を排除する、請求項1に記載のエピタキシャル構造。
- 前記下層下の前記層は、前記基板上にコヒーレントに成長させられる別の下層である、請求項13に記載のエピタキシャル構造。
- 前記基板は、無極性または半極性である、請求項1に記載のエピタキシャル構造。
- III族窒化物ベースの光学素子のためのエピタキシャル構造を製造する方法であって、
基板上にIII族窒化物下層を形成することであって、それにより、該下層内の格子定数および歪みが、該下層下のヘテロ界面でのミスフィット転位の存在に起因して、少なくとも1つの方向において該基板に対して部分的または完全に緩和される、ことと、
該下層上にIII族窒化物活性層を形成することであって、それにより、該活性層の異方性歪みが、該下層によって調節または制御される、ことと
を含む、方法。 - 前記下層と前記基板または該下層下の層との間のヘテロ界面を形成することによって、前記ミスフィット転位を形成することをさらに含み、該下層および該基板または該下層および該層は、各々異なるIII族窒化物合金組成を有しており、該ミスフィット転位は、該ヘテロ界面周辺に局所化され、それにより、前記活性層周辺の層内の前記ミスフィット転位を排除する、請求項16に記載の方法。
- 前記下層を形成する前記ことは、該下層を非コヒーレントに前記基板上に成長させることによるものである、請求項16に記載の方法。
- 前記活性層を形成する前記ことは、該活性層をコヒーレントに該下層上に成長させることによるものである、請求項16に記載の方法。
- 前記下層は、該下層が第1の方向に沿って緩和され、該下層が第2の方向に沿って緩和されないように、前記基板上に形成される、請求項16に記載の方法。
- 前記異方性歪みが、前記下層内の方向の関数としての該下層の種々の程度の緩和によって調節され、それにより、該下層のバンド構造が制御され、前記活性層のバンド構造が制御される、請求項16に記載の方法。
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013502730A (ja) * | 2009-08-21 | 2013-01-24 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | ヘテロ界面にミスフィット転位を有する部分的または完全に緩和された合金上の半極性窒化物ベースの素子 |
JP2018531514A (ja) * | 2015-10-08 | 2018-10-25 | オステンド・テクノロジーズ・インコーポレーテッド | 琥珀色〜赤色の発光(>600nm)を有するIII族窒化物半導体発光デバイス及びこれを作製するための方法 |
WO2020017207A1 (ja) * | 2018-07-20 | 2020-01-23 | ソニーセミコンダクタソリューションズ株式会社 | 半導体発光素子 |
WO2020021979A1 (ja) * | 2018-07-27 | 2020-01-30 | ソニー株式会社 | 発光デバイス |
Families Citing this family (67)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9157167B1 (en) | 2008-06-05 | 2015-10-13 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
US8097081B2 (en) | 2008-06-05 | 2012-01-17 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
US20090301388A1 (en) * | 2008-06-05 | 2009-12-10 | Soraa Inc. | Capsule for high pressure processing and method of use for supercritical fluids |
US8871024B2 (en) * | 2008-06-05 | 2014-10-28 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
US20090320745A1 (en) * | 2008-06-25 | 2009-12-31 | Soraa, Inc. | Heater device and method for high pressure processing of crystalline materials |
US9404197B2 (en) | 2008-07-07 | 2016-08-02 | Soraa, Inc. | Large area, low-defect gallium-containing nitride crystals, method of making, and method of use |
WO2011044554A1 (en) | 2009-10-09 | 2011-04-14 | Soraa, Inc. | Method for synthesis of high quality large area bulk gallium based crystals |
US8805134B1 (en) | 2012-02-17 | 2014-08-12 | Soraa Laser Diode, Inc. | Methods and apparatus for photonic integration in non-polar and semi-polar oriented wave-guided optical devices |
US8979999B2 (en) * | 2008-08-07 | 2015-03-17 | Soraa, Inc. | Process for large-scale ammonothermal manufacturing of gallium nitride boules |
US10036099B2 (en) | 2008-08-07 | 2018-07-31 | Slt Technologies, Inc. | Process for large-scale ammonothermal manufacturing of gallium nitride boules |
US8878230B2 (en) * | 2010-03-11 | 2014-11-04 | Soraa, Inc. | Semi-insulating group III metal nitride and method of manufacture |
US20100147210A1 (en) * | 2008-12-12 | 2010-06-17 | Soraa, Inc. | high pressure apparatus and method for nitride crystal growth |
USRE47114E1 (en) | 2008-12-12 | 2018-11-06 | Slt Technologies, Inc. | Polycrystalline group III metal nitride with getter and method of making |
US9589792B2 (en) | 2012-11-26 | 2017-03-07 | Soraa, Inc. | High quality group-III metal nitride crystals, methods of making, and methods of use |
US8987156B2 (en) | 2008-12-12 | 2015-03-24 | Soraa, Inc. | Polycrystalline group III metal nitride with getter and method of making |
US9543392B1 (en) | 2008-12-12 | 2017-01-10 | Soraa, Inc. | Transparent group III metal nitride and method of manufacture |
US8247886B1 (en) | 2009-03-09 | 2012-08-21 | Soraa, Inc. | Polarization direction of optical devices using selected spatial configurations |
US9250044B1 (en) | 2009-05-29 | 2016-02-02 | Soraa Laser Diode, Inc. | Gallium and nitrogen containing laser diode dazzling devices and methods of use |
US8509275B1 (en) | 2009-05-29 | 2013-08-13 | Soraa, Inc. | Gallium nitride based laser dazzling device and method |
US9800017B1 (en) | 2009-05-29 | 2017-10-24 | Soraa Laser Diode, Inc. | Laser device and method for a vehicle |
US9000466B1 (en) | 2010-08-23 | 2015-04-07 | Soraa, Inc. | Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening |
US9583678B2 (en) | 2009-09-18 | 2017-02-28 | Soraa, Inc. | High-performance LED fabrication |
US10147850B1 (en) | 2010-02-03 | 2018-12-04 | Soraa, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US9564320B2 (en) | 2010-06-18 | 2017-02-07 | Soraa, Inc. | Large area nitride crystal and method for making it |
US9450143B2 (en) | 2010-06-18 | 2016-09-20 | Soraa, Inc. | Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices |
US8729559B2 (en) * | 2010-10-13 | 2014-05-20 | Soraa, Inc. | Method of making bulk InGaN substrates and devices thereon |
US8786053B2 (en) | 2011-01-24 | 2014-07-22 | Soraa, Inc. | Gallium-nitride-on-handle substrate materials and devices and method of manufacture |
WO2012158593A2 (en) * | 2011-05-13 | 2012-11-22 | The Regents Of The University Of California | SUPPRESSION OF INCLINED DEFECT FORMATION AND INCREASE IN CRITICAL THICKNESS BY SILICON DOPING ON NON-C-PLANE (Al,Ga,In)N |
JP5545269B2 (ja) * | 2011-05-19 | 2014-07-09 | 豊田合成株式会社 | Iii族窒化物半導体発光素子及びその製造方法 |
US8686397B2 (en) | 2011-06-10 | 2014-04-01 | The Regents Of The University Of California | Low droop light emitting diode structure on gallium nitride semipolar substrates |
US20120313077A1 (en) * | 2011-06-10 | 2012-12-13 | The Regents Of The University Of California | High emission power and low efficiency droop semipolar blue light emitting diodes |
JP5252042B2 (ja) * | 2011-07-21 | 2013-07-31 | 住友電気工業株式会社 | Iii族窒化物半導体発光素子、及びiii族窒化物半導体発光素子を作製する方法 |
US8686431B2 (en) | 2011-08-22 | 2014-04-01 | Soraa, Inc. | Gallium and nitrogen containing trilateral configuration for optical devices |
CN103733308B (zh) * | 2011-09-05 | 2016-08-17 | 日本电信电话株式会社 | 氮化物半导体结构以及其制作方法 |
JP5238865B2 (ja) * | 2011-10-11 | 2013-07-17 | 株式会社東芝 | 半導体発光素子 |
US8971370B1 (en) | 2011-10-13 | 2015-03-03 | Soraa Laser Diode, Inc. | Laser devices using a semipolar plane |
US9694158B2 (en) | 2011-10-21 | 2017-07-04 | Ahmad Mohamad Slim | Torque for incrementally advancing a catheter during right heart catheterization |
US10029955B1 (en) | 2011-10-24 | 2018-07-24 | Slt Technologies, Inc. | Capsule for high pressure, high temperature processing of materials and methods of use |
EP2771502A1 (en) * | 2011-10-24 | 2014-09-03 | The Regents of The University of California | SUPPRESSION OF RELAXATION BY LIMITED AREA EPITAXY ON NON-C-PLANE (In,Al,B,Ga)N |
JP6019541B2 (ja) * | 2012-02-27 | 2016-11-02 | 国立大学法人山口大学 | 半導体発光素子 |
US10145026B2 (en) | 2012-06-04 | 2018-12-04 | Slt Technologies, Inc. | Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules |
JP2014027092A (ja) * | 2012-07-26 | 2014-02-06 | Sharp Corp | 半導体発光素子 |
US9275912B1 (en) | 2012-08-30 | 2016-03-01 | Soraa, Inc. | Method for quantification of extended defects in gallium-containing nitride crystals |
US9401452B2 (en) | 2012-09-14 | 2016-07-26 | Palo Alto Research Center Incorporated | P-side layers for short wavelength light emitters |
US9219189B2 (en) * | 2012-09-14 | 2015-12-22 | Palo Alto Research Center Incorporated | Graded electron blocking layer |
US9299555B1 (en) | 2012-09-28 | 2016-03-29 | Soraa, Inc. | Ultrapure mineralizers and methods for nitride crystal growth |
US9978904B2 (en) * | 2012-10-16 | 2018-05-22 | Soraa, Inc. | Indium gallium nitride light emitting devices |
US9761763B2 (en) | 2012-12-21 | 2017-09-12 | Soraa, Inc. | Dense-luminescent-materials-coated violet LEDs |
TWI593135B (zh) | 2013-03-15 | 2017-07-21 | 索泰克公司 | 具有含氮化銦鎵之主動區域之半導體結構,形成此等半導體結構之方法,以及應用此等半導體結構形成之發光元件 |
JP2016517627A (ja) * | 2013-03-15 | 2016-06-16 | ソイテックSoitec | InGaNを含んでいる活性領域を有している半導体構造、このような半導体構造を形成する方法、及びこのような半導体構造から形成された発光デバイス |
KR102120682B1 (ko) * | 2013-03-15 | 2020-06-17 | 소이텍 | InGaN을 포함하는 활성 영역을 가지는 반도체 구조, 그와 같은 반도체 구조를 형성하는 방법, 및 그와 같은 반도체 구조로부터 형성되는 발광 장치 |
US9343626B2 (en) | 2013-03-15 | 2016-05-17 | Soitec | Semiconductor structures having active regions comprising InGaN, methods of forming such semiconductor structures, and light emitting devices formed from such semiconductor structures |
FR3003397B1 (fr) | 2013-03-15 | 2016-07-22 | Soitec Silicon On Insulator | Structures semi-conductrices dotées de régions actives comprenant de l'INGAN |
TWI626765B (zh) * | 2013-03-15 | 2018-06-11 | 梭意泰科公司 | 具有包含InGaN之作用區域之半導體結構、形成此等半導體結構之方法及由此等半導體結構所形成之發光裝置 |
US9650723B1 (en) | 2013-04-11 | 2017-05-16 | Soraa, Inc. | Large area seed crystal for ammonothermal crystal growth and method of making |
US9419189B1 (en) | 2013-11-04 | 2016-08-16 | Soraa, Inc. | Small LED source with high brightness and high efficiency |
KR102347387B1 (ko) * | 2015-03-31 | 2022-01-06 | 서울바이오시스 주식회사 | 자외선 발광 소자 |
US10174438B2 (en) | 2017-03-30 | 2019-01-08 | Slt Technologies, Inc. | Apparatus for high pressure reaction |
FR3076080B1 (fr) * | 2017-12-27 | 2019-11-29 | Aledia | Pseudo-substrat pour dispositif optoelectronique et son procede de fabrication |
US11421843B2 (en) | 2018-12-21 | 2022-08-23 | Kyocera Sld Laser, Inc. | Fiber-delivered laser-induced dynamic light system |
US11239637B2 (en) | 2018-12-21 | 2022-02-01 | Kyocera Sld Laser, Inc. | Fiber delivered laser induced white light system |
US11466384B2 (en) | 2019-01-08 | 2022-10-11 | Slt Technologies, Inc. | Method of forming a high quality group-III metal nitride boule or wafer using a patterned substrate |
US11884202B2 (en) | 2019-01-18 | 2024-01-30 | Kyocera Sld Laser, Inc. | Laser-based fiber-coupled white light system |
FR3098992B1 (fr) * | 2019-07-18 | 2023-01-13 | Aledia | Diode électroluminescente et procédé de fabrication |
WO2021162727A1 (en) | 2020-02-11 | 2021-08-19 | SLT Technologies, Inc | Improved group iii nitride substrate, method of making, and method of use |
US11721549B2 (en) | 2020-02-11 | 2023-08-08 | Slt Technologies, Inc. | Large area group III nitride crystals and substrates, methods of making, and methods of use |
CN114000121B (zh) * | 2022-01-05 | 2022-03-15 | 武汉大学 | 一种基于mbe法的应变金刚石生长掺杂方法及外延结构 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010114418A (ja) * | 2008-10-07 | 2010-05-20 | Sumitomo Electric Ind Ltd | 窒化ガリウム系半導体発光素子、窒化ガリウム系半導体発光素子を作製する方法、窒化ガリウム系発光ダイオード、エピタキシャルウエハ、及び窒化ガリウム系発光ダイオードを作製する方法 |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2769924B1 (fr) * | 1997-10-20 | 2000-03-10 | Centre Nat Rech Scient | Procede de realisation d'une couche epitaxiale de nitrure de gallium, couche epitaxiale de nitrure de gallium et composant optoelectronique muni d'une telle couche |
US6389051B1 (en) | 1999-04-09 | 2002-05-14 | Xerox Corporation | Structure and method for asymmetric waveguide nitride laser diode |
JP4432180B2 (ja) * | 1999-12-24 | 2010-03-17 | 豊田合成株式会社 | Iii族窒化物系化合物半導体の製造方法、iii族窒化物系化合物半導体素子及びiii族窒化物系化合物半導体 |
JP2001185493A (ja) * | 1999-12-24 | 2001-07-06 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体の製造方法及びiii族窒化物系化合物半導体素子 |
JP3795771B2 (ja) * | 2001-06-13 | 2006-07-12 | 日本碍子株式会社 | Elo用iii族窒化物半導体基板 |
US8545629B2 (en) * | 2001-12-24 | 2013-10-01 | Crystal Is, Inc. | Method and apparatus for producing large, single-crystals of aluminum nitride |
US6841001B2 (en) | 2002-07-19 | 2005-01-11 | Cree, Inc. | Strain compensated semiconductor structures and methods of fabricating strain compensated semiconductor structures |
EP2315253A1 (en) * | 2005-03-10 | 2011-04-27 | The Regents of the University of California | Technique for the growth of planar semi-polar gallium nitride |
ATE541342T1 (de) * | 2005-04-06 | 2012-01-15 | Reflekron Oy | Sättigbarer halbleiter-absorber-reflektor und verfahren zu seiner herstellung |
US8324660B2 (en) * | 2005-05-17 | 2012-12-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication |
TW200703463A (en) * | 2005-05-31 | 2007-01-16 | Univ California | Defect reduction of non-polar and semi-polar III-nitrides with sidewall lateral epitaxial overgrowth (SLEO) |
US8044417B2 (en) * | 2008-02-01 | 2011-10-25 | The Regents Of The University Of California | Enhancement of optical polarization of nitride light-emitting diodes by increased indium incorporation |
US8410523B2 (en) * | 2006-01-11 | 2013-04-02 | Diana L. Huffaker | Misfit dislocation forming interfacial self-assembly for growth of highly-mismatched III-SB alloys |
US8080833B2 (en) * | 2007-01-26 | 2011-12-20 | Crystal Is, Inc. | Thick pseudomorphic nitride epitaxial layers |
US20080303033A1 (en) | 2007-06-05 | 2008-12-11 | Cree, Inc. | Formation of nitride-based optoelectronic and electronic device structures on lattice-matched substrates |
JP2009111012A (ja) * | 2007-10-26 | 2009-05-21 | Rohm Co Ltd | 半導体発光素子 |
KR100972977B1 (ko) * | 2007-12-14 | 2010-07-29 | 삼성엘이디 주식회사 | 반극성 질화물 단결정 박막의 성장 방법 및 이를 이용한질화물 반도체 발광소자의 제조 방법 |
JP2009252861A (ja) * | 2008-04-03 | 2009-10-29 | Rohm Co Ltd | 半導体レーザ素子 |
US8008181B2 (en) * | 2008-08-22 | 2011-08-30 | The Regents Of The University Of California | Propagation of misfit dislocations from buffer/Si interface into Si |
US8000366B2 (en) | 2008-11-21 | 2011-08-16 | Palo Alto Research Center Incorporated | Laser diode with high indium active layer and lattice matched cladding layer |
JP5316276B2 (ja) * | 2009-01-23 | 2013-10-16 | 住友電気工業株式会社 | 窒化物半導体発光素子、エピタキシャル基板、及び窒化物半導体発光素子を作製する方法 |
JP5326787B2 (ja) * | 2009-05-11 | 2013-10-30 | 住友電気工業株式会社 | Iii族窒化物半導体レーザダイオード、及びiii族窒化物半導体レーザダイオードを作製する方法 |
US8481991B2 (en) * | 2009-08-21 | 2013-07-09 | The Regents Of The University Of California | Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations |
CN102484142A (zh) * | 2009-08-21 | 2012-05-30 | 加利福尼亚大学董事会 | 通过具有错配位错的部分或完全驰豫氮化铝铟镓层的半极性氮化物量子阱中的各向异性应变控制 |
US8729559B2 (en) * | 2010-10-13 | 2014-05-20 | Soraa, Inc. | Method of making bulk InGaN substrates and devices thereon |
TW201228032A (en) * | 2010-10-26 | 2012-07-01 | Univ California | Vicinal semipolar III-nitride substrates to compensate tilt of relaxed hetero-epitaxial layers |
US20120104360A1 (en) * | 2010-10-29 | 2012-05-03 | The Regents Of The University Of California | Strain compensated short-period superlattices on semipolar or nonpolar gan for defect reduction and stress engineering |
-
2010
- 2010-08-23 CN CN2010800373295A patent/CN102484142A/zh active Pending
- 2010-08-23 US US12/861,532 patent/US9159553B2/en active Active
- 2010-08-23 JP JP2012525757A patent/JP2013502731A/ja active Pending
- 2010-08-23 CN CN201080037288XA patent/CN102484047A/zh active Pending
- 2010-08-23 JP JP2012525753A patent/JP2013502730A/ja active Pending
- 2010-08-23 WO PCT/US2010/046341 patent/WO2011022724A1/en active Application Filing
- 2010-08-23 KR KR1020127007354A patent/KR20120055709A/ko not_active Application Discontinuation
- 2010-08-23 EP EP10810724.4A patent/EP2467877A4/en not_active Withdrawn
- 2010-08-23 EP EP10810719.4A patent/EP2467872A4/en not_active Withdrawn
- 2010-08-23 TW TW99128117A patent/TW201138149A/zh unknown
- 2010-08-23 KR KR20127007229A patent/KR20120075463A/ko not_active Application Discontinuation
-
2014
- 2014-09-05 JP JP2014180867A patent/JP2014232892A/ja active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010114418A (ja) * | 2008-10-07 | 2010-05-20 | Sumitomo Electric Ind Ltd | 窒化ガリウム系半導体発光素子、窒化ガリウム系半導体発光素子を作製する方法、窒化ガリウム系発光ダイオード、エピタキシャルウエハ、及び窒化ガリウム系発光ダイオードを作製する方法 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013502730A (ja) * | 2009-08-21 | 2013-01-24 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | ヘテロ界面にミスフィット転位を有する部分的または完全に緩和された合金上の半極性窒化物ベースの素子 |
JP2018531514A (ja) * | 2015-10-08 | 2018-10-25 | オステンド・テクノロジーズ・インコーポレーテッド | 琥珀色〜赤色の発光(>600nm)を有するIII族窒化物半導体発光デバイス及びこれを作製するための方法 |
JP2022071179A (ja) * | 2015-10-08 | 2022-05-13 | オステンド・テクノロジーズ・インコーポレーテッド | 琥珀色~赤色の発光を有するiii族窒化物半導体発光led |
WO2020017207A1 (ja) * | 2018-07-20 | 2020-01-23 | ソニーセミコンダクタソリューションズ株式会社 | 半導体発光素子 |
JPWO2020017207A1 (ja) * | 2018-07-20 | 2021-08-02 | ソニーセミコンダクタソリューションズ株式会社 | 半導体発光素子 |
WO2020021979A1 (ja) * | 2018-07-27 | 2020-01-30 | ソニー株式会社 | 発光デバイス |
JPWO2020021979A1 (ja) * | 2018-07-27 | 2021-08-02 | ソニーグループ株式会社 | 発光デバイス |
JP7388354B2 (ja) | 2018-07-27 | 2023-11-29 | ソニーグループ株式会社 | 発光デバイス |
US11984533B2 (en) | 2018-07-27 | 2024-05-14 | Sony Corporation | Light emitting device using a gallium nitride (GaN) based material |
Also Published As
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KR20120075463A (ko) | 2012-07-06 |
KR20120055709A (ko) | 2012-05-31 |
WO2011022724A1 (en) | 2011-02-24 |
CN102484142A (zh) | 2012-05-30 |
CN102484047A (zh) | 2012-05-30 |
EP2467872A4 (en) | 2013-10-09 |
TW201138149A (en) | 2011-11-01 |
US9159553B2 (en) | 2015-10-13 |
JP2013502730A (ja) | 2013-01-24 |
EP2467877A1 (en) | 2012-06-27 |
JP2014232892A (ja) | 2014-12-11 |
US20110064103A1 (en) | 2011-03-17 |
EP2467872A1 (en) | 2012-06-27 |
EP2467877A4 (en) | 2013-10-09 |
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