KR20180067590A - 앰버 내지 레드 광방출(＞600 ㎚)을 갖는 ⅲ-나이트라이드 반도체 발광 장치 및 그 제조방법 - Google Patents

앰버 내지 레드 광방출(＞600 ㎚)을 갖는 ⅲ-나이트라이드 반도체 발광 장치 및 그 제조방법 Download PDF

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KR20180067590A
KR20180067590A KR1020187013012A KR20187013012A KR20180067590A KR 20180067590 A KR20180067590 A KR 20180067590A KR 1020187013012 A KR1020187013012 A KR 1020187013012A KR 20187013012 A KR20187013012 A KR 20187013012A KR 20180067590 A KR20180067590 A KR 20180067590A
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layer
multiple quantum
iii
quantum well
indium concentration
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Korean (ko)
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예아찬 밀턴 예
허쎄인 에스 엘-고루리
씽 리
지치아 첸
치리 창
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오스텐도 테크놀로지스 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H01L33/32—
    • H01L33/0075—
    • H01L33/06—
    • H01L33/12—
    • H01L33/145—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP

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KR1020187013012A 2015-10-08 2016-10-07 앰버 내지 레드 광방출(＞600 ㎚)을 갖는 ⅲ-나이트라이드 반도체 발광 장치 및 그 제조방법 Ceased KR20180067590A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201562239122P 2015-10-08 2015-10-08
US62/239,122 2015-10-08
US15/287,384 US10396240B2 (en) 2015-10-08 2016-10-06 III-nitride semiconductor light emitting device having amber-to-red light emission (>600 nm) and a method for making same
US15/287,384 2016-10-06
PCT/US2016/056157 WO2017062889A1 (en) 2015-10-08 2016-10-07 III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING AMBER-TO-RED LIGHT EMISSION (>600 nm) AND A METHOD FOR MAKING SAME

Publications (1)

Publication Number Publication Date
KR20180067590A true KR20180067590A (ko) 2018-06-20

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KR1020187013012A Ceased KR20180067590A (ko) 2015-10-08 2016-10-07 앰버 내지 레드 광방출(＞600 ㎚)을 갖는 ⅲ-나이트라이드 반도체 발광 장치 및 그 제조방법

Country Status (7)

Country Link
US (1) US10396240B2 (enExample)
EP (1) EP3360168B1 (enExample)
JP (2) JP2018531514A (enExample)
KR (1) KR20180067590A (enExample)
CN (1) CN108292693B (enExample)
TW (1) TWI775729B (enExample)
WO (1) WO2017062889A1 (enExample)

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US11329191B1 (en) 2015-06-05 2022-05-10 Ostendo Technologies, Inc. Light emitting structures with multiple uniformly populated active layers

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US11329191B1 (en) 2015-06-05 2022-05-10 Ostendo Technologies, Inc. Light emitting structures with multiple uniformly populated active layers
US11335829B2 (en) 2015-06-05 2022-05-17 Ostendo Technologies, Inc. Multi-color light emitting structures with controllable emission color

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Publication number Publication date
TW201735390A (zh) 2017-10-01
JP2018531514A (ja) 2018-10-25
EP3360168B1 (en) 2021-09-29
JP2022071179A (ja) 2022-05-13
TWI775729B (zh) 2022-09-01
WO2017062889A1 (en) 2017-04-13
EP3360168A1 (en) 2018-08-15
CN108292693B (zh) 2021-10-22
US10396240B2 (en) 2019-08-27
US20170104128A1 (en) 2017-04-13
CN108292693A (zh) 2018-07-17
HK1258318A1 (zh) 2019-11-08

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