JP2013502058A5 - - Google Patents

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Publication number
JP2013502058A5
JP2013502058A5 JP2012524169A JP2012524169A JP2013502058A5 JP 2013502058 A5 JP2013502058 A5 JP 2013502058A5 JP 2012524169 A JP2012524169 A JP 2012524169A JP 2012524169 A JP2012524169 A JP 2012524169A JP 2013502058 A5 JP2013502058 A5 JP 2013502058A5
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JP
Japan
Prior art keywords
semiconductor chip
layer
active quantum
less
beam active
Prior art date
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Application number
JP2012524169A
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English (en)
Japanese (ja)
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JP5705222B2 (ja
JP2013502058A (ja
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Publication date
Priority claimed from DE102009037416.7A external-priority patent/DE102009037416B4/de
Application filed filed Critical
Publication of JP2013502058A publication Critical patent/JP2013502058A/ja
Publication of JP2013502058A5 publication Critical patent/JP2013502058A5/ja
Application granted granted Critical
Publication of JP5705222B2 publication Critical patent/JP5705222B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2012524169A 2009-08-13 2010-06-30 電気的にポンピングされるオプトエレクトロニクス半導体チップ Expired - Fee Related JP5705222B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009037416.7 2009-08-13
DE102009037416.7A DE102009037416B4 (de) 2009-08-13 2009-08-13 Elektrisch gepumpter optoelektronischer Halbleiterchip
PCT/EP2010/059291 WO2011018273A1 (de) 2009-08-13 2010-06-30 Elektrisch gepumpter optoelektronischer halbleiterchip

Publications (3)

Publication Number Publication Date
JP2013502058A JP2013502058A (ja) 2013-01-17
JP2013502058A5 true JP2013502058A5 (enExample) 2013-04-04
JP5705222B2 JP5705222B2 (ja) 2015-04-22

Family

ID=42711811

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012524169A Expired - Fee Related JP5705222B2 (ja) 2009-08-13 2010-06-30 電気的にポンピングされるオプトエレクトロニクス半導体チップ

Country Status (7)

Country Link
US (1) US8581236B2 (enExample)
EP (1) EP2465148B1 (enExample)
JP (1) JP5705222B2 (enExample)
KR (2) KR101682345B1 (enExample)
CN (1) CN102576785B (enExample)
DE (1) DE102009037416B4 (enExample)
WO (1) WO2011018273A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI649895B (zh) 2010-04-30 2019-02-01 美國波士頓大學信託會 具能帶結構位變動之高效率紫外光發光二極體
US8723189B1 (en) 2012-01-06 2014-05-13 Trustees Of Boston University Ultraviolet light emitting diode structures and methods of manufacturing the same
DE102013200507A1 (de) * 2013-01-15 2014-07-17 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
JP6010088B2 (ja) * 2014-11-07 2016-10-19 株式会社東芝 半導体発光素子
JP2022172792A (ja) * 2021-05-07 2022-11-17 日機装株式会社 窒化物半導体発光素子

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5023685A (en) * 1988-06-06 1991-06-11 Bethea Clyde G Quantum-well radiation-interactive device, and methods of radiation detection and modulation
JP3304782B2 (ja) * 1996-09-08 2002-07-22 豊田合成株式会社 半導体発光素子
JP3705047B2 (ja) * 1998-12-15 2005-10-12 日亜化学工業株式会社 窒化物半導体発光素子
DE19955747A1 (de) 1999-11-19 2001-05-23 Osram Opto Semiconductors Gmbh Optische Halbleitervorrichtung mit Mehrfach-Quantentopf-Struktur
JP4032636B2 (ja) * 1999-12-13 2008-01-16 日亜化学工業株式会社 発光素子
US6586762B2 (en) 2000-07-07 2003-07-01 Nichia Corporation Nitride semiconductor device with improved lifetime and high output power
US6906352B2 (en) 2001-01-16 2005-06-14 Cree, Inc. Group III nitride LED with undoped cladding layer and multiple quantum well
CN101834245B (zh) * 2001-06-15 2013-05-22 克里公司 在SiC衬底上形成的GaN基LED
US6927412B2 (en) 2002-11-21 2005-08-09 Ricoh Company, Ltd. Semiconductor light emitter
JP2004289112A (ja) * 2003-03-06 2004-10-14 Ricoh Co Ltd 半導体発光素子およびその製造方法および光送信モジュールおよび光送受信モジュールおよび光通信システム
DE602004029910D1 (de) * 2003-08-26 2010-12-16 Sony Corp LICHTEMITTIERENDES BAUELEMENT AUS GaN III-V VERBINDUNGSHALBLEITERMATERIAL UND ZUGEHÖRIGES HERSTELLUNGSVERFAHREN
JP2006108585A (ja) 2004-10-08 2006-04-20 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
JP2006210692A (ja) * 2005-01-28 2006-08-10 Toyoda Gosei Co Ltd ３族窒化物系化合物半導体発光素子
JP2006332258A (ja) 2005-05-25 2006-12-07 Matsushita Electric Ind Co Ltd 窒化物半導体装置及びその製造方法
EP1764840A1 (en) 2005-09-15 2007-03-21 SuperNova Optoelectronics Corporation Gallium nitride semiconductor light emitting device
EP1883141B1 (de) 2006-07-27 2017-05-24 OSRAM Opto Semiconductors GmbH LD oder LED mit Übergitter-Mantelschicht
JP5422384B2 (ja) * 2006-09-01 2014-02-19 ジョージア ステート ユニバーシティ リサーチ ファウンデーション インコーポレイテッド 高動作温度スプリットオフバンド赤外線検出器
KR101330898B1 (ko) 2007-04-05 2013-11-18 엘지전자 주식회사 반도체 레이저 다이오드
US20090183774A1 (en) * 2007-07-13 2009-07-23 Translucent, Inc. Thin Film Semiconductor-on-Sapphire Solar Cell Devices

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