JP2013026616A5 - - Google Patents
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- Publication number
- JP2013026616A5 JP2013026616A5 JP2012055118A JP2012055118A JP2013026616A5 JP 2013026616 A5 JP2013026616 A5 JP 2013026616A5 JP 2012055118 A JP2012055118 A JP 2012055118A JP 2012055118 A JP2012055118 A JP 2012055118A JP 2013026616 A5 JP2013026616 A5 JP 2013026616A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- light emitting
- light
- emitting device
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010410 layer Substances 0.000 claims 36
- 239000004065 semiconductor Substances 0.000 claims 12
- 229910021645 metal ion Inorganic materials 0.000 claims 8
- 229910052782 aluminium Inorganic materials 0.000 claims 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 3
- 230000004888 barrier function Effects 0.000 claims 3
- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 claims 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- 229910019897 RuOx Inorganic materials 0.000 claims 2
- 238000006243 chemical reaction Methods 0.000 claims 2
- 239000010949 copper Substances 0.000 claims 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- 229910005555 GaZnO Inorganic materials 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 239000011651 chromium Substances 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 230000005284 excitation Effects 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 238000005286 illumination Methods 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
- 239000002356 single layer Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052720 vanadium Inorganic materials 0.000 claims 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2011-0073631 | 2011-07-25 | ||
| KR1020110073631A KR20130012428A (ko) | 2011-07-25 | 2011-07-25 | 발광소자 |
| KR10-2011-0075761 | 2011-07-29 | ||
| KR1020110075761A KR20130013869A (ko) | 2011-07-29 | 2011-07-29 | 발광소자 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013026616A JP2013026616A (ja) | 2013-02-04 |
| JP2013026616A5 true JP2013026616A5 (enExample) | 2015-04-30 |
| JP6144014B2 JP6144014B2 (ja) | 2017-06-07 |
Family
ID=45808321
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012055118A Active JP6144014B2 (ja) | 2011-07-25 | 2012-03-12 | 発光素子 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8648384B2 (enExample) |
| EP (1) | EP2551923B1 (enExample) |
| JP (1) | JP6144014B2 (enExample) |
| CN (1) | CN102903806B (enExample) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6081709B2 (ja) * | 2011-03-25 | 2017-02-15 | エルジー イノテック カンパニー リミテッド | 発光素子 |
| JP5781032B2 (ja) | 2012-07-30 | 2015-09-16 | 株式会社東芝 | 半導体発光素子 |
| KR20140019635A (ko) * | 2012-08-06 | 2014-02-17 | 엘지이노텍 주식회사 | 발광 소자 및 발광 소자 패키지 |
| KR101936312B1 (ko) * | 2012-10-09 | 2019-01-08 | 엘지이노텍 주식회사 | 발광소자 |
| KR101976455B1 (ko) * | 2012-10-19 | 2019-05-09 | 엘지이노텍 주식회사 | 발광 소자 및 발광 소자 패키지 |
| JP6001446B2 (ja) | 2012-12-28 | 2016-10-05 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
| CN103915534B (zh) * | 2012-12-31 | 2017-08-22 | 比亚迪股份有限公司 | 一种led外延片及其形成方法 |
| US20160005919A1 (en) * | 2013-02-05 | 2016-01-07 | Tokuyama Corporation | Nitride semiconductor light emitting device |
| CN108365066B (zh) * | 2013-02-08 | 2020-06-02 | 晶元光电股份有限公司 | 发光二极管及其制作方法 |
| KR102019858B1 (ko) * | 2013-07-18 | 2019-09-09 | 엘지이노텍 주식회사 | 발광소자 및 조명시스템 |
| US9647168B2 (en) | 2013-09-03 | 2017-05-09 | Sensor Electronic Technology, Inc. | Optoelectronic device with modulation doping |
| US10804423B2 (en) | 2013-09-03 | 2020-10-13 | Sensor Electronic Technology, Inc. | Optoelectronic device with modulation doping |
| US10903391B2 (en) | 2013-09-03 | 2021-01-26 | Sensor Electronic Technology, Inc. | Optoelectronic device with modulation doping |
| WO2015034865A1 (en) * | 2013-09-03 | 2015-03-12 | Sensor Electronic Technology, Inc. | Optoelectronic device with modulation doping |
| KR20150039475A (ko) * | 2013-10-02 | 2015-04-10 | 엘지이노텍 주식회사 | 발광소자 |
| KR102116829B1 (ko) * | 2013-11-27 | 2020-06-01 | 서울바이오시스 주식회사 | 자외선 발광 다이오드 및 그것을 제조하는 방법 |
| US20150179881A1 (en) * | 2013-12-24 | 2015-06-25 | Sharp Kabushiki Kaisha | Nitride led structure with double graded electron blocking layer |
| JP2015188048A (ja) * | 2014-03-10 | 2015-10-29 | 株式会社東芝 | 窒化物半導体積層体および半導体発光素子 |
| JP6885675B2 (ja) * | 2016-04-18 | 2021-06-16 | スタンレー電気株式会社 | 半導体発光素子 |
| DE102016111929A1 (de) | 2016-06-29 | 2018-01-04 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterkörper und Leuchtdiode |
| KR102675576B1 (ko) | 2016-07-04 | 2024-06-18 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
| CN109791960B (zh) * | 2016-09-13 | 2022-10-21 | 苏州立琻半导体有限公司 | 半导体器件和包括该半导体器件的半导体器件封装 |
| DE102016117477A1 (de) * | 2016-09-16 | 2018-03-22 | Osram Opto Semiconductors Gmbh | Halbleiterschichtenfolge |
| JP6477642B2 (ja) * | 2016-09-23 | 2019-03-06 | 日亜化学工業株式会社 | 発光素子 |
| JP2019054023A (ja) * | 2017-09-12 | 2019-04-04 | 豊田合成株式会社 | Ｉｉｉ族窒化物半導体発光素子とその製造方法 |
| JP2021034497A (ja) * | 2019-08-22 | 2021-03-01 | 株式会社東芝 | 半導体発光デバイス |
| DE102023108165A1 (de) * | 2023-03-30 | 2024-10-02 | Ams-Osram International Gmbh | Halbleiterschichtenfolge |
| JP2024143250A (ja) * | 2023-03-30 | 2024-10-11 | スタンレー電気株式会社 | 紫外半導体発光素子 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE69637304T2 (de) * | 1995-03-17 | 2008-08-07 | Toyoda Gosei Co., Ltd. | Lichtemittierende Halbleitervorrichtung bestehend aus einer III-V Nitridverbindung |
| CN1160801C (zh) * | 1995-11-06 | 2004-08-04 | 日亚化学工业株式会社 | 氮化物半导体器件 |
| US6858882B2 (en) * | 2000-09-08 | 2005-02-22 | Sharp Kabushiki Kaisha | Nitride semiconductor light-emitting device and optical device including the same |
| MY129352A (en) * | 2001-03-28 | 2007-03-30 | Nichia Corp | Nitride semiconductor device |
| US7692182B2 (en) * | 2001-05-30 | 2010-04-06 | Cree, Inc. | Group III nitride based quantum well light emitting device structures with an indium containing capping structure |
| JP2005203520A (ja) * | 2004-01-14 | 2005-07-28 | Sumitomo Electric Ind Ltd | 半導体発光素子 |
| JP4206086B2 (ja) * | 2004-08-03 | 2009-01-07 | 住友電気工業株式会社 | 窒化物半導体発光素子および窒化物半導体発光素子を製造する方法 |
| KR100670531B1 (ko) * | 2004-08-26 | 2007-01-16 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
| US7326963B2 (en) * | 2004-12-06 | 2008-02-05 | Sensor Electronic Technology, Inc. | Nitride-based light emitting heterostructure |
| JP2007088270A (ja) * | 2005-09-22 | 2007-04-05 | Matsushita Electric Works Ltd | 半導体発光素子およびそれを用いる照明装置ならびに半導体発光素子の製造方法 |
| KR100753518B1 (ko) * | 2006-05-23 | 2007-08-31 | 엘지전자 주식회사 | 질화물계 발광 소자 |
| KR100850950B1 (ko) * | 2006-07-26 | 2008-08-08 | 엘지전자 주식회사 | 질화물계 발광 소자 |
| US20080137701A1 (en) * | 2006-12-12 | 2008-06-12 | Joseph Michael Freund | Gallium Nitride Based Semiconductor Device with Reduced Stress Electron Blocking Layer |
| JP5316276B2 (ja) * | 2009-01-23 | 2013-10-16 | 住友電気工業株式会社 | 窒化物半導体発光素子、エピタキシャル基板、及び窒化物半導体発光素子を作製する方法 |
| EP2408028B1 (en) * | 2010-07-16 | 2015-04-08 | LG Innotek Co., Ltd. | Light emitting device |
-
2012
- 2012-02-16 US US13/397,907 patent/US8648384B2/en active Active
- 2012-03-07 CN CN201210058023.9A patent/CN102903806B/zh active Active
- 2012-03-09 EP EP12158942.8A patent/EP2551923B1/en active Active
- 2012-03-12 JP JP2012055118A patent/JP6144014B2/ja active Active
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