JP2012522390A5 - - Google Patents
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- Publication number
- JP2012522390A5 JP2012522390A5 JP2012502545A JP2012502545A JP2012522390A5 JP 2012522390 A5 JP2012522390 A5 JP 2012522390A5 JP 2012502545 A JP2012502545 A JP 2012502545A JP 2012502545 A JP2012502545 A JP 2012502545A JP 2012522390 A5 JP2012522390 A5 JP 2012522390A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor chip
- optoelectronic semiconductor
- quantum well
- active quantum
- zones
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 24
- 230000005693 optoelectronics Effects 0.000 claims 21
- 229910052738 indium Inorganic materials 0.000 claims 8
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 8
- 239000000463 material Substances 0.000 claims 2
- 150000004767 nitrides Chemical class 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 230000004888 barrier function Effects 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102009015569.4A DE102009015569B9 (de) | 2009-03-30 | 2009-03-30 | Optoelektronischer Halbleiterchip |
| DE102009015569.4 | 2009-03-30 | ||
| PCT/EP2010/053047 WO2010112310A1 (de) | 2009-03-30 | 2010-03-10 | Optoelektronischer halbleiterchip |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015025476A Division JP5933775B2 (ja) | 2009-03-30 | 2015-02-12 | オプトエレクトロニクス半導体チップ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2012522390A JP2012522390A (ja) | 2012-09-20 |
| JP2012522390A5 true JP2012522390A5 (enExample) | 2013-03-28 |
Family
ID=42340450
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012502545A Pending JP2012522390A (ja) | 2009-03-30 | 2010-03-10 | オプトエレクトロニクス半導体チップ |
| JP2015025476A Active JP5933775B2 (ja) | 2009-03-30 | 2015-02-12 | オプトエレクトロニクス半導体チップ |
| JP2016092753A Pending JP2016157977A (ja) | 2009-03-30 | 2016-05-02 | オプトエレクトロニクス半導体チップ |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015025476A Active JP5933775B2 (ja) | 2009-03-30 | 2015-02-12 | オプトエレクトロニクス半導体チップ |
| JP2016092753A Pending JP2016157977A (ja) | 2009-03-30 | 2016-05-02 | オプトエレクトロニクス半導体チップ |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US8908733B2 (enExample) |
| EP (1) | EP2415085B1 (enExample) |
| JP (3) | JP2012522390A (enExample) |
| KR (2) | KR101645057B1 (enExample) |
| CN (2) | CN102369606B (enExample) |
| DE (1) | DE102009015569B9 (enExample) |
| TW (1) | TWI452723B (enExample) |
| WO (1) | WO2010112310A1 (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102009015569B9 (de) * | 2009-03-30 | 2023-06-29 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterchip |
| KR101712049B1 (ko) | 2010-11-17 | 2017-03-03 | 엘지이노텍 주식회사 | 발광 소자 |
| JP5417307B2 (ja) * | 2010-12-02 | 2014-02-12 | 株式会社東芝 | 半導体発光素子 |
| JP2014067893A (ja) | 2012-09-26 | 2014-04-17 | Toyoda Gosei Co Ltd | Ｉｉｉ族窒化物半導体発光素子 |
| DE102013200507A1 (de) * | 2013-01-15 | 2014-07-17 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement |
| DE102013104351B4 (de) | 2013-04-29 | 2022-01-20 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterschichtenfolge und Verfahren zum Betreiben eines optoelektronischen Halbleiterchips |
| JP2015038949A (ja) * | 2013-07-17 | 2015-02-26 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
| KR102019858B1 (ko) * | 2013-07-18 | 2019-09-09 | 엘지이노텍 주식회사 | 발광소자 및 조명시스템 |
| FR3009894B1 (fr) | 2013-08-22 | 2016-12-30 | Commissariat Energie Atomique | Diode electroluminescente dont une zone active comporte des couches d'inn |
| JP6183060B2 (ja) * | 2013-08-24 | 2017-08-23 | 日亜化学工業株式会社 | 半導体発光素子 |
| JPWO2017119365A1 (ja) * | 2016-01-08 | 2018-11-01 | ソニー株式会社 | 半導体発光素子、表示装置および電子機器 |
| DE102016117477A1 (de) * | 2016-09-16 | 2018-03-22 | Osram Opto Semiconductors Gmbh | Halbleiterschichtenfolge |
| JP7295371B2 (ja) * | 2018-08-31 | 2023-06-21 | 日亜化学工業株式会社 | 半導体レーザ素子 |
| JP6891865B2 (ja) * | 2018-10-25 | 2021-06-18 | 日亜化学工業株式会社 | 発光素子 |
| US10735354B1 (en) | 2018-10-30 | 2020-08-04 | Facebook, Inc. | Photo space user interface facilitating contextual discussion between users of a social networking system |
| FR3096508A1 (fr) * | 2019-05-21 | 2020-11-27 | Aledia | Dispositif optoélectronique à diodes électroluminescentes |
| US20240395966A1 (en) * | 2023-05-24 | 2024-11-28 | Wisconsin Alumni Research Foundation | Light-emitters with group iii-nitride-based quantum well active regions having gan interlayers |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR950000119B1 (ko) * | 1991-12-30 | 1995-01-09 | 주식회사 금성사 | 반도체 레이저의 구조 |
| JP3543498B2 (ja) * | 1996-06-28 | 2004-07-14 | 豊田合成株式会社 | ３族窒化物半導体発光素子 |
| DE19955747A1 (de) | 1999-11-19 | 2001-05-23 | Osram Opto Semiconductors Gmbh | Optische Halbleitervorrichtung mit Mehrfach-Quantentopf-Struktur |
| JP3876649B2 (ja) | 2001-06-05 | 2007-02-07 | ソニー株式会社 | 窒化物半導体レーザ及びその製造方法 |
| MY139533A (en) * | 2001-11-05 | 2009-10-30 | Nichia Corp | Nitride semiconductor device |
| US6618413B2 (en) * | 2001-12-21 | 2003-09-09 | Xerox Corporation | Graded semiconductor layers for reducing threshold voltage for a nitride-based laser diode structure |
| JP2003229645A (ja) * | 2002-01-31 | 2003-08-15 | Nec Corp | 量子井戸構造およびそれを用いた半導体素子ならびに半導体素子の製造方法 |
| JP4047150B2 (ja) * | 2002-11-28 | 2008-02-13 | ローム株式会社 | 半導体発光素子 |
| JP4412918B2 (ja) | 2003-05-28 | 2010-02-10 | シャープ株式会社 | 窒化物半導体発光素子及びその製造方法 |
| JP2004356356A (ja) | 2003-05-29 | 2004-12-16 | Oki Electric Ind Co Ltd | 洗浄終了判定方法および洗浄装置 |
| US6995389B2 (en) * | 2003-06-18 | 2006-02-07 | Lumileds Lighting, U.S., Llc | Heterostructures for III-nitride light emitting devices |
| JPWO2005020396A1 (ja) | 2003-08-26 | 2006-10-19 | ソニー株式会社 | ＧａＮ系ＩＩＩ−Ｖ族化合物半導体発光素子及びその製造方法 |
| US7138648B2 (en) * | 2003-12-17 | 2006-11-21 | Palo Alto Research Center Incorporated | Ultraviolet group III-nitride-based quantum well laser diodes |
| KR100513923B1 (ko) | 2004-08-13 | 2005-09-08 | 재단법인서울대학교산학협력재단 | 질화물 반도체층을 성장시키는 방법 및 이를 이용하는 질화물 반도체 발광소자 |
| DE102005035722B9 (de) * | 2005-07-29 | 2021-11-18 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung |
| US20070045638A1 (en) | 2005-08-24 | 2007-03-01 | Lumileds Lighting U.S., Llc | III-nitride light emitting device with double heterostructure light emitting region |
| JP5244297B2 (ja) | 2006-04-12 | 2013-07-24 | 株式会社日立製作所 | 半導体発光素子 |
| JP2008288397A (ja) * | 2007-05-17 | 2008-11-27 | Eudyna Devices Inc | 半導体発光装置 |
| KR101459752B1 (ko) * | 2007-06-22 | 2014-11-13 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
| DE102007044439B4 (de) | 2007-09-18 | 2022-03-24 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterchip mit Quantentopfstruktur |
| EP2332383B1 (en) * | 2008-09-03 | 2013-01-30 | Telefonaktiebolaget L M Ericsson (PUBL) | A method for allocating communication bandwidth and associated device |
| DE102009015569B9 (de) * | 2009-03-30 | 2023-06-29 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterchip |
| US8779412B2 (en) * | 2011-07-20 | 2014-07-15 | Samsung Electronics Co., Ltd. | Semiconductor light emitting device |
-
2009
- 2009-03-30 DE DE102009015569.4A patent/DE102009015569B9/de active Active
-
2010
- 2010-03-10 WO PCT/EP2010/053047 patent/WO2010112310A1/de not_active Ceased
- 2010-03-10 CN CN201080014639.5A patent/CN102369606B/zh active Active
- 2010-03-10 JP JP2012502545A patent/JP2012522390A/ja active Pending
- 2010-03-10 EP EP10707304.1A patent/EP2415085B1/de active Active
- 2010-03-10 KR KR1020117025789A patent/KR101645057B1/ko active Active
- 2010-03-10 CN CN201410437730.8A patent/CN104319331B/zh active Active
- 2010-03-10 KR KR1020167017756A patent/KR101704985B1/ko active Active
- 2010-03-10 US US13/262,583 patent/US8908733B2/en active Active
- 2010-03-25 TW TW099108846A patent/TWI452723B/zh active
-
2014
- 2014-11-06 US US14/535,044 patent/US9202971B2/en active Active
-
2015
- 2015-02-12 JP JP2015025476A patent/JP5933775B2/ja active Active
-
2016
- 2016-05-02 JP JP2016092753A patent/JP2016157977A/ja active Pending
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