JP2012522390A - オプトエレクトロニクス半導体チップ - Google Patents
オプトエレクトロニクス半導体チップ Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 154
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 133
- 229910052738 indium Inorganic materials 0.000 claims abstract description 97
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 97
- 239000000463 material Substances 0.000 claims abstract description 13
- 150000004767 nitrides Chemical class 0.000 claims abstract description 6
- 230000004888 barrier function Effects 0.000 claims description 18
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 15
- 238000010586 diagram Methods 0.000 description 13
- 230000005428 wave function Effects 0.000 description 9
- 230000007423 decrease Effects 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000005283 ground state Effects 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- 238000005253 cladding Methods 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000013139 quantization Methods 0.000 description 1
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Abstract
Description
ci<ci+1 かつ ci+1>ci+2
ここでは、成長方向に対して平行に、p端子側からn端子側へ順番に連続番号が前記ゾーンに付与される。有利にはi=1である。換言すると、活性量子井戸は中央に、インジウム含有率が高い中央ゾーンを有し、該中央ゾーンの両側に、それよりインジウム含有率が低いゾーンが設けられている。
ci>ci+1 かつ ci+2>ci+1 かつ ci>ci+2
換言すると、i+1番目のゾーンは、インジウム含有率がより高い2つのゾーンに挟まれる。i+1番目のゾーンはたとえば、量子井戸の分布プロフィールにおいて中間バリアとなる。有利には、i=1またはi=2である。
wi>wi+1 かつ wi+2>wi+1
換言すると、幅が大きい2つのゾーン間に、幅がより小さいゾーンが設けられる。この実施例では、とりわけi+1番目のゾーンは、活性量子井戸のゾーンのうち最大平均インジウム含有率を有するゾーンである。すなわち、有利にはi=1またはi=2である。
wi<wi+1 かつ wi<wi+2
この実施形態では有利には、i+1番目のゾーンが、最大インジウム含有率を有するゾーンである。したがって、有利にはi=1である。さらに、とりわけwi+1>wi+2を適用することができる。
0.35ci−1≦ci≦0.65ci−1
を適用し、とりわけ、
0.40ci−1≦ci≦0.60ci−1
を適用する。上記両関係式では、有利にはi=2またはi>2である。
Eg(x)=x・3.42+(1−x)・0.77−x・(1−x)・1.43
によって表すことができる。ここでは、Applied Physics Letters, Vol. 80, Issue 25, 2002年度、第4741〜4743頁を参照されたい。
Claims (15)
- 前記活性量子井戸(2)の前記ゾーン(A)の各インジウム含有率cは一定である、請求項1または2記載のオプトエレクトロニクス半導体チップ。
- N≧3であり、
前記ゾーン(A)に、前記成長方向zに平行な方向に順に連続番号を付した場合、該成長方向zに対して平行に前記半導体チップ(1)のp端子側(p)からn端子側(n)に向かう方向における前記ゾーン(A)の少なくとも一部の平均インジウム含有率に、
ci<ci+1 かつci+1>ci+2
が適用される、請求項1から3までのいずれか1項記載のオプトエレクトロニクス半導体チップ。 - ci<ci+2である、請求項4記載のオプトエレクトロニクス半導体チップ。
- N≧3であり、
前記ゾーン(A)に、前記成長方向zに平行な方向に順に連続番号を付した場合、該成長方向zに対して平行に前記半導体チップ(1)のp端子側(p)からn端子側(n)に向かう方向における前記ゾーン(A)の少なくとも一部の平均インジウム含有率に、
ci>ci+1 かつci+1>ci+2 かつci>ci+2
が適用される、請求項1から5までのいずれか1項記載のオプトエレクトロニクス半導体チップ。 - 前記活性量子井戸(2)の前記インジウム含有率cは、前記成長方向zに対して平行な方向に単調に増大していく、請求項1から3までのいずれか1項記載のオプトエレクトロニクス半導体チップ。
- Nは3〜10であり、
前記活性量子井戸(2)の全幅(W)は0.25nm〜12nmである、請求項1から7までのいずれか1項記載のオプトエレクトロニクス半導体チップ。 - 前記活性量子井戸(2)は、前記成長方向zに対して平行な方向に2〜5個である、請求項1から8までのいずれか1項記載のオプトエレクトロニクス半導体チップ。
- 前記オプトエレクトロニクス半導体チップ(1)は少なくとも2つの非活性量子井戸(3)を有し、
前記非活性量子井戸(3)の各インジウム含有率は、前記活性量子井戸(2)の最大インジウム含有率より小さい、請求項1から9までのいずれか1項記載のオプトエレクトロニクス半導体チップ。 - 少なくとも2つの隣接する前記活性量子井戸(2)間に、前記非活性量子井戸(3)が少なくとも1つ設けられている、請求項9および10記載のオプトエレクトロニクス半導体チップ。
- 前記オプトエレクトロニクス半導体チップ(1)は少なくとも2つの導波層(4)を含み、前記活性量子井戸(2)は該導波層(4)間に設けられており、
前記導波層(4)のうち少なくとも1つの導波層は、少なくとも1つのキャリア障壁層(5)を含む、請求項1から11までのいずれか1項記載のオプトエレクトロニクス半導体チップ。 - 前記オプトエレクトロニクス半導体チップ(1)はレーザ光を生成するために構成されている、請求項1から12までのいずれか1項記載のオプトエレクトロニクス半導体チップ。
- 前記オプトエレクトロニクス半導体チップ(1)は、430nm〜540nmの電磁波を生成するために構成されている、請求項1から13までのいずれか1項記載のオプトエレクトロニクス半導体チップ。
- 窒化物材料系をベースとするオプトエレクトロニクス半導体チップであって、
前記オプトエレクトロニクス半導体チップ(1)は少なくとも1つの活性量子井戸(2)を有し、
動作中、前記活性量子井戸(2)において電磁波が生成され、
前記活性量子井戸(2)は、前記オプトエレクトロニクス半導体チップ(1)の成長方向zに対して平行な方向に、相互に重なったN個のゾーン(A)を有し、ただし、Nは2以上の自然数であり、
前記ゾーン(A)には、前記成長方向zに対して平行な方向に順に連続番号が付されており、
前記ゾーン(A)のうち少なくとも2つのゾーンの平均アルミニウム含有率kは相互に異なり、
前記活性量子井戸(2)は、
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DE102009015569.4 | 2009-03-30 | ||
DE102009015569.4A DE102009015569B9 (de) | 2009-03-30 | 2009-03-30 | Optoelektronischer Halbleiterchip |
PCT/EP2010/053047 WO2010112310A1 (de) | 2009-03-30 | 2010-03-10 | Optoelektronischer halbleiterchip |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015043352A (ja) * | 2013-08-24 | 2015-03-05 | 日亜化学工業株式会社 | 半導体発光素子 |
JP2015092636A (ja) * | 2009-03-30 | 2015-05-14 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | オプトエレクトロニクス半導体チップ |
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JP2020068311A (ja) * | 2018-10-25 | 2020-04-30 | 日亜化学工業株式会社 | 発光素子 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101712049B1 (ko) | 2010-11-17 | 2017-03-03 | 엘지이노텍 주식회사 | 발광 소자 |
JP5417307B2 (ja) * | 2010-12-02 | 2014-02-12 | 株式会社東芝 | 半導体発光素子 |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002368343A (ja) * | 2001-06-05 | 2002-12-20 | Sony Corp | 窒化物半導体レーザ |
JP2003273473A (ja) * | 2001-11-05 | 2003-09-26 | Nichia Chem Ind Ltd | 半導体素子 |
JP2005012216A (ja) * | 2003-06-18 | 2005-01-13 | Lumileds Lighting Us Llc | Iii族窒化物発光デバイスのためのヘテロ構造 |
WO2005020396A1 (ja) * | 2003-08-26 | 2005-03-03 | Sony Corporation | GaN系III−V族化合物半導体発光素子及びその製造方法 |
JP2007067418A (ja) * | 2005-08-24 | 2007-03-15 | Philips Lumileds Lightng Co Llc | 二重ヘテロ構造の発光領域を有するiii族窒化物発光デバイス |
JP2007515791A (ja) * | 2004-08-13 | 2007-06-14 | ソウル ナショナル ユニヴァーシティー インダストリー ファンデーション | 窒化物半導体層を成長させる方法及びこれを利用する窒化物半導体発光素子 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR950000119B1 (ko) * | 1991-12-30 | 1995-01-09 | 주식회사 금성사 | 반도체 레이저의 구조 |
JP3543498B2 (ja) * | 1996-06-28 | 2004-07-14 | 豊田合成株式会社 | 3族窒化物半導体発光素子 |
DE19955747A1 (de) | 1999-11-19 | 2001-05-23 | Osram Opto Semiconductors Gmbh | Optische Halbleitervorrichtung mit Mehrfach-Quantentopf-Struktur |
US6618413B2 (en) * | 2001-12-21 | 2003-09-09 | Xerox Corporation | Graded semiconductor layers for reducing threshold voltage for a nitride-based laser diode structure |
JP2003229645A (ja) | 2002-01-31 | 2003-08-15 | Nec Corp | 量子井戸構造およびそれを用いた半導体素子ならびに半導体素子の製造方法 |
JP4047150B2 (ja) * | 2002-11-28 | 2008-02-13 | ローム株式会社 | 半導体発光素子 |
JP4412918B2 (ja) | 2003-05-28 | 2010-02-10 | シャープ株式会社 | 窒化物半導体発光素子及びその製造方法 |
JP2004356356A (ja) | 2003-05-29 | 2004-12-16 | Oki Electric Ind Co Ltd | 洗浄終了判定方法および洗浄装置 |
US7138648B2 (en) | 2003-12-17 | 2006-11-21 | Palo Alto Research Center Incorporated | Ultraviolet group III-nitride-based quantum well laser diodes |
DE102005035722B9 (de) * | 2005-07-29 | 2021-11-18 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung |
JP5244297B2 (ja) * | 2006-04-12 | 2013-07-24 | 株式会社日立製作所 | 半導体発光素子 |
JP2008288397A (ja) * | 2007-05-17 | 2008-11-27 | Eudyna Devices Inc | 半導体発光装置 |
KR101459752B1 (ko) * | 2007-06-22 | 2014-11-13 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
DE102007044439B4 (de) * | 2007-09-18 | 2022-03-24 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterchip mit Quantentopfstruktur |
JP5281162B2 (ja) * | 2008-09-03 | 2013-09-04 | テレフオンアクチーボラゲット エル エム エリクソン(パブル) | 通信帯域を割当てるための方法及び関連する装置 |
DE102009015569B9 (de) * | 2009-03-30 | 2023-06-29 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterchip |
US8779412B2 (en) * | 2011-07-20 | 2014-07-15 | Samsung Electronics Co., Ltd. | Semiconductor light emitting device |
-
2009
- 2009-03-30 DE DE102009015569.4A patent/DE102009015569B9/de active Active
-
2010
- 2010-03-10 KR KR1020117025789A patent/KR101645057B1/ko active IP Right Grant
- 2010-03-10 WO PCT/EP2010/053047 patent/WO2010112310A1/de active Application Filing
- 2010-03-10 KR KR1020167017756A patent/KR101704985B1/ko active IP Right Grant
- 2010-03-10 CN CN201410437730.8A patent/CN104319331B/zh active Active
- 2010-03-10 US US13/262,583 patent/US8908733B2/en active Active
- 2010-03-10 CN CN201080014639.5A patent/CN102369606B/zh active Active
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- 2010-03-10 EP EP10707304.1A patent/EP2415085B1/de active Active
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-
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- 2014-11-06 US US14/535,044 patent/US9202971B2/en active Active
-
2015
- 2015-02-12 JP JP2015025476A patent/JP5933775B2/ja active Active
-
2016
- 2016-05-02 JP JP2016092753A patent/JP2016157977A/ja active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002368343A (ja) * | 2001-06-05 | 2002-12-20 | Sony Corp | 窒化物半導体レーザ |
JP2003273473A (ja) * | 2001-11-05 | 2003-09-26 | Nichia Chem Ind Ltd | 半導体素子 |
JP2005012216A (ja) * | 2003-06-18 | 2005-01-13 | Lumileds Lighting Us Llc | Iii族窒化物発光デバイスのためのヘテロ構造 |
WO2005020396A1 (ja) * | 2003-08-26 | 2005-03-03 | Sony Corporation | GaN系III−V族化合物半導体発光素子及びその製造方法 |
JP2007515791A (ja) * | 2004-08-13 | 2007-06-14 | ソウル ナショナル ユニヴァーシティー インダストリー ファンデーション | 窒化物半導体層を成長させる方法及びこれを利用する窒化物半導体発光素子 |
JP2007067418A (ja) * | 2005-08-24 | 2007-03-15 | Philips Lumileds Lightng Co Llc | 二重ヘテロ構造の発光領域を有するiii族窒化物発光デバイス |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015092636A (ja) * | 2009-03-30 | 2015-05-14 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | オプトエレクトロニクス半導体チップ |
JP2015043352A (ja) * | 2013-08-24 | 2015-03-05 | 日亜化学工業株式会社 | 半導体発光素子 |
US9912123B2 (en) | 2013-08-24 | 2018-03-06 | Nichia Corporation | Semiconductor light emitting device |
JP2019525474A (ja) * | 2016-09-16 | 2019-09-05 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 半導体積層体 |
US10720549B2 (en) | 2016-09-16 | 2020-07-21 | Osram Oled Gmbh | Semiconductor layer sequence having pre- and post-barrier layers and quantum wells |
JP2020068311A (ja) * | 2018-10-25 | 2020-04-30 | 日亜化学工業株式会社 | 発光素子 |
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CN104319331B (zh) | 2017-05-10 |
JP2016157977A (ja) | 2016-09-01 |
EP2415085A1 (de) | 2012-02-08 |
DE102009015569A1 (de) | 2010-10-07 |
KR20160085909A (ko) | 2016-07-18 |
DE102009015569B4 (de) | 2023-03-23 |
US20150063395A1 (en) | 2015-03-05 |
CN102369606A (zh) | 2012-03-07 |
JP5933775B2 (ja) | 2016-06-15 |
KR20120009475A (ko) | 2012-01-31 |
CN102369606B (zh) | 2014-10-01 |
KR101645057B1 (ko) | 2016-08-02 |
DE102009015569B9 (de) | 2023-06-29 |
US20130028281A1 (en) | 2013-01-31 |
WO2010112310A1 (de) | 2010-10-07 |
JP2015092636A (ja) | 2015-05-14 |
KR101704985B1 (ko) | 2017-02-08 |
TW201044635A (en) | 2010-12-16 |
EP2415085B1 (de) | 2019-01-02 |
US8908733B2 (en) | 2014-12-09 |
US9202971B2 (en) | 2015-12-01 |
TWI452723B (zh) | 2014-09-11 |
CN104319331A (zh) | 2015-01-28 |
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