JP2016157977A - オプトエレクトロニクス半導体チップ - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 152
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 131
- 239000000463 material Substances 0.000 claims abstract description 12
- 150000004767 nitrides Chemical class 0.000 claims abstract description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 24
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 24
- 230000004888 barrier function Effects 0.000 claims description 18
- 229910052738 indium Inorganic materials 0.000 abstract description 89
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract description 89
- 238000010586 diagram Methods 0.000 description 13
- 230000005428 wave function Effects 0.000 description 9
- 230000007423 decrease Effects 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000005283 ground state Effects 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- 238000005253 cladding Methods 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000013139 quantization Methods 0.000 description 1
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Abstract
【解決手段】オプトエレクトロニクス半導体チップの少なくとも1つの実施形態では、該オプトエレクトロニクス半導体チップ(1)は窒化物材料系をベースとし、少なくとも1つの活性量子井戸(2)を含む。前記少なくとも1つの活性量子井戸(2)は、動作中に電磁波を生成するように形成されている。さらに、前記少なくとも1つの活性量子井戸(2)は、半導体チップ(1)の成長方向zに対して平行な方向にN個の相互に重なったゾーン(A)を含む。ここで、Nは2以上の自然数である。前記活性量子井戸(2)のゾーン(A)のうち少なくとも2つのゾーンの各平均インジウム含有率cは相互に異なる。
【選択図】図1
Description
ci<ci+1 かつ ci+1>ci+2
ここでは、成長方向に対して平行に、p端子側からn端子側へ順番に連続番号が前記ゾーンに付与される。有利にはi=1である。換言すると、活性量子井戸は中央に、インジウム含有率が高い中央ゾーンを有し、該中央ゾーンの両側に、それよりインジウム含有率が低いゾーンが設けられている。
ci>ci+1 かつ ci+2>ci+1 かつ ci>ci+2
換言すると、i+1番目のゾーンは、インジウム含有率がより高い2つのゾーンに挟まれる。i+1番目のゾーンはたとえば、量子井戸の分布プロフィールにおいて中間バリアとなる。有利には、i=1またはi=2である。
wi>wi+1 かつ wi+2>wi+1
換言すると、幅が大きい2つのゾーン間に、幅がより小さいゾーンが設けられる。この実施例では、とりわけi+1番目のゾーンは、活性量子井戸のゾーンのうち最大平均インジウム含有率を有するゾーンである。すなわち、有利にはi=1またはi=2である。
wi<wi+1 かつ wi<wi+2
この実施形態では有利には、i+1番目のゾーンが、最大インジウム含有率を有するゾーンである。したがって、有利にはi=1である。さらに、とりわけwi+1>wi+2を適用することができる。
0.35ci−1≦ci≦0.65ci−1
を適用し、とりわけ、
0.40ci−1≦ci≦0.60ci−1
を適用する。上記両関係式では、有利にはi=2またはi>2である。
Eg(x)=x・3.42+(1−x)・0.77−x・(1−x)・1.43
によって表すことができる。ここでは、Applied Physics Letters, Vol. 80, Issue 25, 2002年度、第4741〜4743頁を参照されたい。
Claims (14)
- 窒化物材料系をベースとするオプトエレクトロニクス半導体チップ(1)であって、
前記オプトエレクトロニクス半導体チップ(1)は少なくとも1つの活性量子井戸(2)を有し、
動作中、前記活性量子井戸(2)において電磁波が生成され、
前記活性量子井戸(2)は、前記オプトエレクトロニクス半導体チップ(1)の成長方向zに対して平行な方向に、相互に重なったN個のゾーン(A)を有し、ただし、Nは2以上の自然数であり、
前記ゾーン(A)に、前記成長方向zに対して平行な方向に連続番号が付されており、
前記ゾーン(A)のうち少なくとも2つのゾーンの平均アルミニウム含有率kは相互に異なり、
前記活性量子井戸(2)は、条件
- 前記少なくとも1つの活性量子井戸(2)の前記ゾーン(A)の各アルミニウム含有率kは一定である、請求項2記載のオプトエレクトロニクス半導体チップ(1)。
- N≧3であり、
前記ゾーン(A)に、前記成長方向zに平行な方向に順に連続番号を付した場合、該成長方向zに対して平行に前記半導体チップ(1)のp端子側(p)からn端子側(n)に向かう方向における前記ゾーン(A)の少なくとも一部の平均アルミニウム含有率に、
ki>ki+1かつki+1<ki+2
が適用される、
請求項3記載のオプトエレクトロニクス半導体チップ(1)。 - ki>ki+2である、
請求項4記載のオプトエレクトロニクス半導体チップ(1)。 - N≧3であり、
前記ゾーン(A)に、前記成長方向zに平行な方向に順に連続番号を付した場合、該成長方向zに対して平行に前記半導体チップ(1)のp端子側(p)からn端子側(n)に向かう方向における前記ゾーン(A)の少なくとも一部の平均アルミニウム含有率に、
kj<kj+1 かつkj+2<kj+1かつkj<kj+2
が適用され、
ただし、kjはj番目のゾーン(A)の平均アルミニウム含有率であり、かつj≠iである、
請求項5記載のオプトエレクトロニクス半導体チップ(1)。 - 前記少なくとも1つの活性量子井戸(2)の前記アルミニウム含有率kは、前記成長方向zに対して平行な方向に単調に増大していく、
請求項1から3までのいずれか1項記載のオプトエレクトロニクス半導体チップ(1)。 - Nは3〜10であり、
前記活性量子井戸(2)の全幅(W)は0.25nm〜12nmである、
請求項1から6までのいずれか1項記載のオプトエレクトロニクス半導体チップ(1)。 - 前記オプトエレクトロニクス半導体チップ(1)は、前記成長方向zに対して平行な方向に2〜5個の前記活性量子井戸(2)を有する、
請求項1から6までのいずれか1項記載のオプトエレクトロニクス半導体チップ(1)。 - 前記オプトエレクトロニクス半導体チップ(1)は少なくとも2つの非活性量子井戸(3)を有し、
前記非活性量子井戸(3)の各アルミニウム含有率は、前記活性量子井戸(2)の最大アルミニウム含有率より小さい、
請求項9記載のオプトエレクトロニクス半導体チップ(1)。 - 少なくとも2つの隣接する前記活性量子井戸(2)間に、非活性量子井戸(3)が少なくとも1つ設けられている、
請求項10記載のオプトエレクトロニクス半導体チップ(1)。 - 前記オプトエレクトロニクス半導体チップ(1)は少なくとも2つの導波層(4)を含み、前記少なくとも1つの活性量子井戸(2)は該導波層(4)間に設けられており、
前記導波層(4)のうち少なくとも1つの導波層は、少なくとも1つのキャリア障壁層(5)を含む、
請求項1から6までのいずれか1項記載のオプトエレクトロニクス半導体チップ(1)。 - 前記オプトエレクトロニクス半導体チップ(1)はレーザ光を生成するために構成されている、
請求項1から6までのいずれか1項記載のオプトエレクトロニクス半導体チップ(1)。 - 前記オプトエレクトロニクス半導体チップ(1)は、430nm〜540nmの電磁波を生成するために構成されている、
請求項1から6までのいずれか1項記載のオプトエレクトロニクス半導体チップ(1)。
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